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1. 发明申请

US20060231836A1 Surge voltage protection diode and method of forming the same 有权
标题翻译：浪涌电压保护二极管及其形成方法
公开(公告)号：US20060231836A1
公开(公告)日：2006-10-19
申请号：US11374420
申请日：2006-03-14
申请人： Naoki Kumagai , Hiroshi Kanemaru , Yuiichi Harada , Yoshihiro Ikura , Ryuu Saitou
发明人： Naoki Kumagai , Hiroshi Kanemaru , Yuiichi Harada , Yoshihiro Ikura , Ryuu Saitou
IPC分类号： H01L29/04
CPC分类号： H01L27/0255 , H01L29/8611 , H01L2924/0002 , H01L2924/00
摘要： To prevent the destruction of a semiconductor element due to negative resistance, and to reduce the dynamic resistance of a static electricity prevention diode, the ratio of the maximum electric field intensity during an avalanche and the average electric field in a strong electric field region, as well as the impurity density gradient in the vicinity of the strong electric field region are optimized. During avalanche breakdown, a depletion layer is formed across the entire high resistivity region, and its average electric field is kept to ½ or more of the maximum electric field intensity. The density gradients (the depths and impurity densities) of a p+ region and of an n+ region that form a p-n junction of the diode are controlled so that the density gradient in the neighborhood of the high resistivity region does not have negative resistance with respect to increase of the avalanche current.
摘要翻译：为了防止由于负电阻而导致的半导体元件的破坏，并且为了降低静电防护二极管的动态电阻，在雪崩期间的最大电场强度与强电场区域中的平均电场的比例，如而且强电场区附近的杂质浓度梯度被优化。在雪崩击穿期间，在整个高电阻率区域形成耗尽层，其平均电场保持在最大电场强度的1/2以上。控制形成二极管的pn结的ap + SUP区域和n + SUP区域的密度梯度（深度和杂质浓度），使得密度梯度相对于雪崩电流的增加，高电阻率区域的附近没有负电阻。

2. 发明授权

US07098488B2 Insulated gate bipolar transistor 有权
标题翻译：绝缘栅双极晶体管
公开(公告)号：US07098488B2
公开(公告)日：2006-08-29
申请号：US10839791
申请日：2004-05-05
申请人： Koh Yoshikawa , Katsunori Ueno , Hiroshi Kanemaru
发明人： Koh Yoshikawa , Katsunori Ueno , Hiroshi Kanemaru
IPC分类号： H01L29/73
CPC分类号： H01L29/41741 , H01L29/7397
摘要： An IGBT having a trench gate structure is disclosed which generates decreased noise at switching and displays superiority in saturation voltage to turn-off loss characteristics (trade-off characteristics). In a part of a region on an emitter side surface interposed between trench gates, a sub well region is provided, which is connected to an emitter electrode through diodes. When the IGBT is in a turned-on state, the diodes are brought into a non-conduction state to isolate the sub well region from the emitter electrode, by which carriers are accumulated. When the IGBT is in a turned-off state, the diodes are brought into a conduction state to electrically connect the sub well region to the emitter electrode, by which carriers are discharged at a high speed. In an early stage of turning-on of the IGBT, capacitance of a portion of the gate facing the sub well region is converted to gate-emitter capacitance to thereby reduce gate-collector capacitance, by which electromagnetic noise at switching is reduced.
摘要翻译：公开了具有沟槽栅极结构的IGBT，其在开关时产生降低的噪声，并且将饱和电压的优越性显示为关断损耗特性（权衡特性）。在介于沟槽栅极之间的发射极侧表面的区域的一部分中，设置有通过二极管连接到发射极的子阱区域。当IGBT处于导通状态时，二极管进入非导通状态，以将子阱区域与发射极隔离，由此累积载流子。当IGBT处于关断状态时，二极管进入导通状态，以将子阱区域电连接到发射极电极，载流子以高速放电。在IGBT的导通的早期阶段，面向子阱区域的栅极的一部分的电容被转换为栅极 - 发射极电容，从而减小栅极 - 集电极电容，由此降低开关中的电磁噪声。

3. 发明申请

US20110005619A1 WATER FAUCET DEVICE 审中-公开
标题翻译：水龙头装置
公开(公告)号：US20110005619A1
公开(公告)日：2011-01-13
申请号：US12886116
申请日：2010-09-20
申请人： Hiroshi KANEMARU , Kenichi AOYAGI , Masato YAMAHIGASHI , Masateru MIYAZAKI , Tsuyoshi MIURA
发明人： Hiroshi KANEMARU , Kenichi AOYAGI , Masato YAMAHIGASHI , Masateru MIYAZAKI , Tsuyoshi MIURA
IPC分类号： F16K37/00
CPC分类号： E03C1/055 , Y10T137/8158
摘要： To provide a water faucet device capable of easy grasp of setting states, without enlarging the size of the display portion. The present invention is a water faucet device (1) furnished with a flow setting function or temperature setting function; whereby the water faucet device has an operating portion (6) for controlling the water faucet device; a spout portion (2) forming a water discharge port; a light injecting portion (42), disposed at the base of the spout portion or the operating portion so as to be adjacent to the attaching surface at which the spout portion or the control portion are attached, for shining light onto the attaching surface; and display means (26) for displaying flow setting values or temperature setting values by varying the illumination range (46) formed on the attaching surface by the light illuminated from the light injecting portion.
摘要翻译：提供能够容易地掌握设定状态的水龙头装置，而不增大显示部分的尺寸。本发明是具有流量调节功能或温度设定功能的水龙头装置（1）由此水龙头装置具有用于控制水龙头装置的操作部分（6）; 形成排水口的喷口部（2）光喷射部分（42），其设置在所述喷口部分或所述操作部分的基部处以与附接所述喷口部分或所述控制部分的所述附接表面相邻，用于将光照射到所述附接表面上; 以及显示装置（26），用于通过通过从光注入部照射的光改变形成在附着表面上的照明范围（46）来显示流量设定值或温度设定值。

4. 发明授权

US07723817B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07723817B2
公开(公告)日：2010-05-25
申请号：US11420779
申请日：2006-05-29
申请人： Hiroshi Kanemaru , Naoki Kumagai , Yuichi Harada , Yoshihiro Ikura , Yoshiaki Minoya
发明人： Hiroshi Kanemaru , Naoki Kumagai , Yuichi Harada , Yoshihiro Ikura , Yoshiaki Minoya
IPC分类号： H01L29/00
CPC分类号： H01L21/76283 , H01L21/76275 , H01L21/823878 , H01L21/84 , H01L27/12 , H01L29/78603
摘要： The shape of a tip of an insulating material of an insulating isolation region is provided as being a concave one recessed below the back surface of an n-semiconductor substrate. This reduces the electric field strength at the corner at which the bottom of the n-semiconductor substrate is in contact with the insulating isolation region to allow an excellent breakdown voltage to be obtained. Moreover, by forming a high impurity concentration region such as a field-stop layer on the back surface of the n-semiconductor substrate, a depletion layer extending from the top surface is prevented from reaching the back surface. This eliminates an influence of a surface state introduced in the interface between the insulator film formed on the back surface and the n-semiconductor substrate, by which an excellent breakdown voltage can be obtained.
摘要翻译：绝缘隔离区域的绝缘材料的顶端的形状设置为在n半导体衬底的背面下方凹入的凹部。这降低了在半导体衬底的底部与绝缘隔离区接触的拐角处的电场强度，以获得优异的击穿电压。此外，通过在n半导体衬底的背面上形成诸如场阻止层的高杂质浓度区域，可以防止从顶面延伸的耗尽层到达背面。这消除了在形成在背面的绝缘体膜与n型半导体衬底之间的界面中引入的表面状态的影响，由此可获得优异的击穿电压。

5. 发明授权

US07436024B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07436024B2
公开(公告)日：2008-10-14
申请号：US11196528
申请日：2005-08-03
申请人： Naoki Kumagai , Yuuichi Harada , Hiroshi Kanemaru , Yoshihiro Ikura , Ryuu Saitou
发明人： Naoki Kumagai , Yuuichi Harada , Hiroshi Kanemaru , Yoshihiro Ikura , Ryuu Saitou
IPC分类号： H01L29/94
CPC分类号： H01L29/7816 , H01L21/266 , H01L29/0878 , H01L29/0886 , H01L29/42368 , H01L29/66681
摘要： A lateral MOSFET and a method of forming thereof includes a p-type semiconductor substrate, a first n-type well in the surface portion of the semiconductor substrate, an n+-type drain region in the first n-type well, a p-type well in the first n-type well, an n+-type source region in the p-type well, a gate oxide film on the portion of the p-type well between the n+-type source region and the first n-type well, a gate electrode on the gate oxide film, and a second n-type well containing the p-type well therein to increase the n-type impurity concentration in the vicinity of the junction between the p-type well and the first n-type well beneath the gate and to increase the impurity amount and the thickness of the n-type semiconductor region beneath the p-type well. The first and second n-type wells can be overlapping or formed continuous or contiguous with each other. The lateral MOSFET exhibits a high punch-through breakdown voltage suitable for a high-side switch.
摘要翻译：横向MOSFET及其形成方法包括p型半导体衬底，半导体衬底的表面部分中的第一n型阱，第一n型n型阱中的n + 型阱，p型阱中的第一n型阱中的p型阱，p型阱中的n + + +型源极区，p型阱部分中的栅极氧化膜在n + +型源极区域和第一n型阱之间，栅极氧化物膜上的栅极电极以及其中包含p型阱的第二n型阱，以增加在p型阱和栅极下面的第一n型阱之间的接合点附近的n型杂质浓度增加，并且增加p型阱下面的n型半导体区的杂质量和厚度。第一和第二n型阱可以重叠或形成为彼此连续或连续的。横向MOSFET表现出适合于高侧开关的高穿孔击穿电压。

6. 发明授权

US08317110B2 Water-and-hot-water mixing device 有权
标题翻译：水和热水混合装置
公开(公告)号：US08317110B2
公开(公告)日：2012-11-27
申请号：US12565221
申请日：2009-09-23
申请人： Kenichi Aoyagi , Hiroshi Kanemaru , Tsuyoshi Miura , Masayuki Oba
发明人： Kenichi Aoyagi , Hiroshi Kanemaru , Tsuyoshi Miura , Masayuki Oba
IPC分类号： G05D23/13 , E03C1/04 , F16K31/48
CPC分类号： G05D23/1393 , Y10T137/86389
摘要： A water-and-hot-water mixing device includes a mixing valve unit which mixes hot water and water and discharges mixed water therefrom, an operation part which sets a predetermined temperature, a mixed water thermistor which detects a temperature of mixed water, a hot-water thermistor which detects a temperature of hot water supplied to the mixing valve unit, and a controller which performs a feedback control of a discharge water temperature by controlling the mixing valve unit. The controller starts the feedback control when the controller determines that a change amount of the temperature of the hot water per unit time detected by the hot-water thermistor is not more than a fixed value and the temperature of the hot water detected by the hot-water thermistor is not lower than the predetermined temperature.
摘要翻译：水热水混合装置包括混合阀单元，其混合热水和水并从其中排出混合水，设定预定温度的操作部分，检测混合水的温度的混合水热敏电阻，热 - 检测供给到混合阀单元的热水的温度的水热敏电阻，以及通过控制混合阀单元进行排出水温度的反馈控制的控制器。当控制器确定由热水热敏电阻检测到的每单位时间内的热水温度的变化量不超过固定值，并且由热水热敏电阻检测到的热水温度，控制器开始反馈控制，水热敏电阻不低于预定温度。

7. 发明申请

US20060027863A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060027863A1
公开(公告)日：2006-02-09
申请号：US11196528
申请日：2005-08-03
申请人： Naoki Kumagai , Yuuichi Harada , Hiroshi Kanemaru , Yoshihiro Ikura , Ryuu Saitou
发明人： Naoki Kumagai , Yuuichi Harada , Hiroshi Kanemaru , Yoshihiro Ikura , Ryuu Saitou
IPC分类号： H01L29/76
CPC分类号： H01L29/7816 , H01L21/266 , H01L29/0878 , H01L29/0886 , H01L29/42368 , H01L29/66681
摘要： A lateral MOSFET and a method of forming thereof includes a p-type semiconductor substrate, a first n-type well in the surface portion of the semiconductor substrate, an n+-type drain region in the first n-type well, a p-type well in the first n-type well, an n+-type source region in the p-type well, a gate oxide film on the portion of the p-type well between the n+-type source region and the first n-type well, a gate electrode on the gate oxide film, and a second n-type well containing the p-type well therein to increase the n-type impurity concentration in the vicinity of the junction between the p-type well and the first n-type well beneath the gate and to increase the impurity amount and the thickness of the n-type semiconductor region beneath the p-type well. The first and second n-type wells can be overlapping or formed continuous or contiguous with each other. The lateral MOSFET exhibits a high punch-through breakdown voltage suitable for a high-side switch.
摘要翻译：横向MOSFET及其形成方法包括p型半导体衬底，半导体衬底的表面部分中的第一n型阱，第一n型n型阱中的n + 型阱，p型阱中的第一n型阱中的p型阱，p型阱中的n + + +型源极区，p型阱部分中的栅极氧化膜在n + +型源极区域和第一n型阱之间，栅极氧化物膜上的栅极电极以及其中包含p型阱的第二n型阱，以增加在p型阱和栅极下面的第一n型阱之间的接合点附近的n型杂质浓度增加，并且增加p型阱下面的n型半导体区的杂质量和厚度。第一和第二n型阱可以重叠或形成为彼此连续或连续的。横向MOSFET表现出适合于高侧开关的高穿孔击穿电压。

8. 发明授权

US5502003A Silicon carbide electronic device manufacturing method 失效
标题翻译：碳化硅电子器件制造方法
公开(公告)号：US5502003A
公开(公告)日：1996-03-26
申请号：US396147
申请日：1995-03-01
申请人： Shinji Ogino , Tatsuo Urushidani , Hiroshi Kanemaru
发明人： Shinji Ogino , Tatsuo Urushidani , Hiroshi Kanemaru
IPC分类号： C01B31/36 , H01L21/04 , H01L21/28 , H01L29/24 , H01L29/43 , H01L29/45
CPC分类号： H01L29/1608 , H01L21/0485 , H01L29/45 , Y10S438/931
摘要： Reciprocal diffusion is prevented in a SiC electronic device by interposing an intermediate layer composed of W or a W-Si alloy rather than forming the Ni electrode directly on a SiC base, providing a stable electrode for which the contact resistance does not increase even when high temperatures are maintained. Bonding is facilitated when Au layer is formed on top of the Ni layer.
摘要翻译：在SiC电子器件中通过插入由W或W-Si合金构成的中间层而不是直接在SiC基底上形成Ni电极来防止SiC电子器件的交互扩散，从而提供即使在高的情况下接触电阻也不会增加的稳定电极保持温度。当在Ni层顶部形成Au层时，结合是有利的。

9. 发明申请

US20100078491A1 WATER-AND-HOT-WATER MIXING DEVICE 有权
标题翻译：水和热水混合装置
公开(公告)号：US20100078491A1
公开(公告)日：2010-04-01
申请号：US12565221
申请日：2009-09-23
申请人： Kenichi AOYAGI , Hiroshi KANEMARU , Tsuyoshi MIURA , Masayuki OBA
发明人： Kenichi AOYAGI , Hiroshi KANEMARU , Tsuyoshi MIURA , Masayuki OBA
IPC分类号： G05D23/13
CPC分类号： G05D23/1393 , Y10T137/86389
摘要： A water-and-hot-water mixing device includes a mixing valve unit which mixes hot water and water and discharges mixed water therefrom, an operation part which sets a predetermined temperature, a mixed water thermistor which detects a temperature of mixed water, a hot-water thermistor which detects a temperature of hot water supplied to the mixing valve unit, and a controller which performs a feedback control of a discharge water temperature by controlling the mixing valve unit. The controller starts the feedback control when the controller determines that a change amount of the temperature of the hot water per unit time detected by the hot-water thermistor is not more than a fixed value and the temperature of the hot water detected by the hot-water thermistor is not lower than the predetermined temperature.
摘要翻译：水热水混合装置包括混合阀单元，其混合热水和水并从其中排出混合水，设定预定温度的操作部分，检测混合水的温度的混合水热敏电阻，热 - 检测供给到混合阀单元的热水的温度的水热敏电阻，以及通过控制混合阀单元进行排出水温度的反馈控制的控制器。当控制器确定由热水热敏电阻检测到的每单位时间内的热水温度的变化量不超过固定值，并且由热水热敏电阻检测到的热水温度，控制器开始反馈控制，水热敏电阻不低于预定温度。

10. 发明授权

US07602022B2 Surge voltage protection diode with controlled p-n junction density gradients 有权
标题翻译：具有受控p-n结密度梯度的浪涌电压保护二极管
公开(公告)号：US07602022B2
公开(公告)日：2009-10-13
申请号：US11374420
申请日：2006-03-14
申请人： Naoki Kumagai , Hiroshi Kanemaru , Yuiichi Harada , Yoshihiro Ikura , Ryuu Saitou
发明人： Naoki Kumagai , Hiroshi Kanemaru , Yuiichi Harada , Yoshihiro Ikura , Ryuu Saitou
IPC分类号： H01L23/62
CPC分类号： H01L27/0255 , H01L29/8611 , H01L2924/0002 , H01L2924/00
摘要： To prevent the destruction of a semiconductor element due to negative resistance, and to reduce the dynamic resistance of a static electricity prevention diode, the ratio of the maximum electric field intensity during an avalanche and the average electric field in a strong electric field region, as well as the impurity density gradient in the vicinity of the strong electric field region are optimized. During avalanche breakdown, a depletion layer is formed across the entire high resistivity region, and its average electric field is kept to ½ or more of the maximum electric field intensity. The density gradients (the depths and impurity densities) of a p+ region and of an n+ region that form a p-n junction of the diode are controlled so that the density gradient in the neighborhood of the high resistivity region does not have negative resistance with respect to increase of the avalanche current.
摘要翻译：为了防止由于负电阻而导致的半导体元件的破坏，并且为了降低静电防护二极管的动态电阻，在雪崩期间的最大电场强度与强电场区域中的平均电场的比例，如而且强电场区附近的杂质浓度梯度被优化。在雪崩击穿期间，在整个高电阻率区域形成耗尽层，其平均电场保持在最大电场强度的1/2以上。控制形成二极管的pn结的p +区域和n +区域的密度梯度（深度和杂质浓度），使得高电阻率区域附近的密度梯度相对于增加雪崩电流。

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