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1. 发明申请

US20120034561A1 RESIST POLYMER AND RESIST COMPOSITION 有权
标题翻译：耐聚合物和耐腐蚀组合物
公开(公告)号：US20120034561A1
公开(公告)日：2012-02-09
申请号：US13242879
申请日：2011-09-23
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03F7/20 , C08F224/00 , G03F7/004
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要翻译：本发明的抗蚀剂聚合物包含具有氰基的特定结构单元，具有酸解离基的结构单元和具有内酯骨架的特定结构单元。当在DUV准分子激光光刻或电子束光刻中使用上述聚合物作为抗蚀剂树脂时，其表现出高灵敏度和高分辨率，并且提供良好的抗蚀剂图案形状，线边缘粗糙度的发生程度小或微凝胶的产生。

2. 发明授权

US07575846B2 Resist polymer and resist composition 有权
标题翻译：抗聚合物和抗蚀剂组成
公开(公告)号：US07575846B2
公开(公告)日：2009-08-18
申请号：US10543914
申请日：2004-01-29
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03C1/73 , G03F7/039 , C08F120/70 , C08F24/00
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要翻译：本发明的抗蚀剂聚合物包含具有氰基的特定结构单元，具有酸解离基的结构单元和具有内酯骨架的特定结构单元。当在DUV准分子激光光刻或电子束光刻中使用上述聚合物作为抗蚀剂树脂时，其表现出高灵敏度和高分辨率，并且提供良好的抗蚀剂图案形状，线边缘粗糙度的发生程度小或微凝胶的产生。

3. 发明授权

US08580481B2 Resist polymer and resist composition 有权
公开(公告)号：US08580481B2
公开(公告)日：2013-11-12
申请号：US13242879
申请日：2011-09-23
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.

4. 发明授权

US08092979B2 Resist polymer and resist composition 有权
标题翻译：抗聚合物和抗蚀剂组成
公开(公告)号：US08092979B2
公开(公告)日：2012-01-10
申请号：US12496232
申请日：2009-07-01
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03F7/039 , C08F222/14 , C08F222/20 , C08F222/22
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要翻译：本发明的抗蚀剂聚合物包含具有氰基的特定结构单元，具有酸解离基的结构单元和具有内酯骨架的特定结构单元。当在DUV准分子激光光刻或电子束光刻中使用上述聚合物作为抗蚀剂树脂时，其表现出高灵敏度和高分辨率，并且提供良好的抗蚀剂图案形状，线边缘粗糙度的发生程度小或微凝胶的产生。

5. 发明申请

US20090263743A1 RESIST POLYMER AND RESIST COMPOSITION 有权
标题翻译：耐聚合物和耐腐蚀组合物
公开(公告)号：US20090263743A1
公开(公告)日：2009-10-22
申请号：US12496232
申请日：2009-07-01
申请人： Hikaru MOMOSE , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru MOMOSE , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03F7/20 , C08F24/00 , C08F10/00 , G03F7/004
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要翻译：本发明的抗蚀剂聚合物包含具有氰基的特定结构单元，具有酸解离基的结构单元和具有内酯骨架的特定结构单元。当在DUV准分子激光光刻或电子束光刻中使用上述聚合物作为抗蚀剂树脂时，其表现出高灵敏度和高分辨率，并且提供良好的抗蚀剂图案形状，线边缘粗糙度的发生程度小或微凝胶的产生。

6. 发明申请

US20060127801A1 Resist polymer and resist composition 有权
公开(公告)号：US20060127801A1
公开(公告)日：2006-06-15
申请号：US10543914
申请日：2004-01-29
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Kayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Kayashi , Takeshi Iwai
IPC分类号： G03C1/76
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.

7. 发明申请

US20090198065A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER 有权
标题翻译：耐腐蚀聚合物，耐腐蚀组合物，形成图案的方法和起始化合物用于生产耐候聚合物
公开(公告)号：US20090198065A1
公开(公告)日：2009-08-06
申请号：US12411703
申请日：2009-03-26
申请人： Hikaru Momose , Atsushi Ootake , Tadashi Nakamura , Akifumi Ueda
发明人： Hikaru Momose , Atsushi Ootake , Tadashi Nakamura , Akifumi Ueda
IPC分类号： C07D211/00 , C07C69/608 , C07C69/74 , C07D307/02 , C07D309/02 , C07D311/78 , C07C323/00 , C07C69/96
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F222/1006
摘要： To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R1 represents H or a methyl group.
摘要翻译：提供一种抗蚀剂聚合物，其包含作为结构单元的具有由式（1）或（2）表示的结构的酸可分解单元，其具有小的线边缘粗糙度，并且在DUV准分子激光光刻技术中几乎没有缺陷。在式（1）和（2）中，n表示2〜24的整数，当n = 2时，J表示单键或可以具有取代基/杂原子的二价烃基，或当n> = 3时，表示可以具有取代基/杂原子的n价烃基; E表示聚合终止剂，链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基，亚环烷基，氧化烯，亚芳基，二价噻唑啉环，二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C（O）O - ， - C（O） - 和-OC（O） - 的至少一种; M1，M2和M3各自表示选自亚烷基，亚环烷基，氧化烯和亚芳基中的至少一种; Y，Y 1和Y 2各自表示酸分解键; k1，k2，l1，l2，m1，m2，m3各自表示0或1; R1表示H或甲基。

8. 发明授权

US08241829B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer 有权
标题翻译：抗蚀剂聚合物，抗蚀剂组合物，图案形成方法和用于生产抗蚀剂聚合物的起始化合物
公开(公告)号：US08241829B2
公开(公告)日：2012-08-14
申请号：US10592057
申请日：2005-03-08
申请人： Hikaru Momose , Atsushi Ootake , Tadashi Nakamura , Akifumi Ueda
发明人： Hikaru Momose , Atsushi Ootake , Tadashi Nakamura , Akifumi Ueda
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F222/1006
摘要： To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, m3 and n1 each represent 0 or 1; and R1 represents H or a methyl group.
摘要翻译：提供一种抗蚀剂聚合物，其包含作为结构单元的具有由式（1）或（2）表示的结构的酸可分解单元，其具有小的线边缘粗糙度，并且在DUV准分子激光光刻技术中几乎没有缺陷。在式（1）和（2）中，n表示2〜24的整数，当n = 2时，J表示单键或可以具有取代基/杂原子的二价烃基，或表示当n≥3时可具有取代基/杂原子的n价烃基; E表示聚合终止剂，链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基，亚环烷基，氧化烯，亚芳基，二价噻唑啉环，二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C（O）O - ， - C（O） - 和-OC（O） - 的至少一种; M1，M2和M3各自表示选自亚烷基，亚环烷基，氧化烯和亚芳基中的至少一种; Y，Y 1和Y 2各自表示酸分解键; k1，k2，l1，l2，m1，m2，m3和n1各自表示0或1; R1表示H或甲基。

9. 发明授权

US07316884B2 5-methylene-1,3-dioxolan-4-one derivatives, process for their production, polymers of the derivatives, resist compositions, and pattern formation process 有权
标题翻译： 5-亚甲基-1,3-二氧戊环-4-酮衍生物，其制备方法，衍生物的聚合物，抗蚀剂组合物和图案形成方法
公开(公告)号：US07316884B2
公开(公告)日：2008-01-08
申请号：US10492207
申请日：2002-10-22
申请人： Ryuichi Ansai , Yoshihiro Kamon , Tadayuki Fujiwara , Hideaki Kuwano , Atsushi Ootake , Hikaru Momose
发明人： Ryuichi Ansai , Yoshihiro Kamon , Tadayuki Fujiwara , Hideaki Kuwano , Atsushi Ootake , Hikaru Momose
IPC分类号： G03C1/73 , G03F7/20 , G03F7/30 , C08F220/10 , C08F224/00 , C07D317/34 , C07D317/72
CPC分类号： C07D317/72 , C07D317/18 , C07D317/34 , C07D317/42 , C08F20/30 , C08F24/00 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/143
摘要： A 5-methylene-1,3-dioxolan-4-one derivative and a monomer and copolymer thereof and a resist composition containing the polymer or copolymer where the 5-methylene-1,3 -dioxolan-4-one derivative is of formula (1): wherein R1 represents a bridged cyclic hydrocarbon group containing 4 to 16 carbon atoms, or a linear or branched alkyl group containing 1 to 6 carbon atoms which has a bridged cyclic hydrocarbon group containing 4 to 16 carbon atoms as a substituent; R2 represents a hydrogen atom, or a linear or branched alkyl group containing 1 to 6 carbon atoms; or R1 and R2 represent a bridged cyclic hydrocarbon group containing 4 to 16 carbon atoms together with the carbon atom to which they are bound, provided that the alkyl group and the bridged cyclic hydrocarbon group may have at least one substituent selected from a group consisting of a linear or branched alkyl group containing 1 to 6 carbon atoms which may be optionally substituted, a hydroxy group, a carboxy group, an acyl group containing 2 to 6 carbon atoms, an alkoxy group containing 1 to 6 carbon atoms, and a carboxy group esterified with an alcohol containing 1 to 6 carbon atoms.
摘要翻译： 5-亚甲基-1,3-二氧戊环-4-酮衍生物及其单体和共聚物以及含有聚合物或共聚物的抗蚀剂组合物，其中5-亚甲基-1,3-二氧戊环-4-酮衍生物具有式（ 1）表示：其中R 1表示含有4至16个碳原子的桥连环烃基，或含有1至6个碳原子的直链或支链烷基，其具有含有4至16个碳原子作为取代基; R 2表示氢原子或含有1至6个碳原子的直链或支链烷基; 或R 1和R 2代表含有4至16个碳原子的桥连环烃基以及它们所连接的碳原子，条件是烷基和桥连环状烃基可以具有至少一个选自含有1-6个碳原子的直链或支链烷基的取代基，其可任选被取代，羟基，羧基，含有2-6个碳原子的酰基原子，含有1至6个碳原子的烷氧基，以及与含有1至6个碳原子的醇酯化的羧基。

10. 发明授权

US08614283B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer 有权
标题翻译：抗蚀剂聚合物，抗蚀剂组合物，图案形成方法和用于生产抗蚀剂聚合物的起始化合物
公开(公告)号：US08614283B2
公开(公告)日：2013-12-24
申请号：US13032299
申请日：2011-02-22
申请人： Hikaru Momose , Atsushi Ootake , Tadashi Nakamura , Akifumi Ueda
发明人： Hikaru Momose , Atsushi Ootake , Tadashi Nakamura , Akifumi Ueda
IPC分类号： C08F22/14 , C08F22/20 , C08F220/68 , C08F220/18 , C08F220/28
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F222/1006
摘要： To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R1 represents H or a methyl group.
摘要翻译：提供一种抗蚀剂聚合物，其包含作为结构单元的具有由式（1）或（2）表示的结构的酸可分解单元，其具有小的线边缘粗糙度，并且在DUV准分子激光光刻技术中几乎没有缺陷。在式（1）和（2）中，n表示2〜24的整数，当n = 2时，J表示单键或可以具有取代基/杂原子的二价烃基，或当n> = 3时，表示可以具有取代基/杂原子的n价烃基; E表示聚合终止剂，链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基，亚环烷基，氧化烯，亚芳基，二价噻唑啉环，二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C（O）O - ， - C（O） - 和-OC（O） - 的至少一种; M1，M2和M3各自表示选自亚烷基，亚环烷基，氧化烯和亚芳基中的至少一种; Y，Y 1和Y 2各自表示酸分解键; k1，k2，l1，l2，m1，m2，m3各自表示0或1; R1表示H或甲基。

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