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1. 发明申请

US20120034561A1 RESIST POLYMER AND RESIST COMPOSITION 有权
标题翻译：耐聚合物和耐腐蚀组合物
公开(公告)号：US20120034561A1
公开(公告)日：2012-02-09
申请号：US13242879
申请日：2011-09-23
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03F7/20 , C08F224/00 , G03F7/004
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要翻译：本发明的抗蚀剂聚合物包含具有氰基的特定结构单元，具有酸解离基的结构单元和具有内酯骨架的特定结构单元。当在DUV准分子激光光刻或电子束光刻中使用上述聚合物作为抗蚀剂树脂时，其表现出高灵敏度和高分辨率，并且提供良好的抗蚀剂图案形状，线边缘粗糙度的发生程度小或微凝胶的产生。

2. 发明授权

US08580481B2 Resist polymer and resist composition 有权
公开(公告)号：US08580481B2
公开(公告)日：2013-11-12
申请号：US13242879
申请日：2011-09-23
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.

3. 发明授权

US08092979B2 Resist polymer and resist composition 有权
标题翻译：抗聚合物和抗蚀剂组成
公开(公告)号：US08092979B2
公开(公告)日：2012-01-10
申请号：US12496232
申请日：2009-07-01
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03F7/039 , C08F222/14 , C08F222/20 , C08F222/22
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要翻译：本发明的抗蚀剂聚合物包含具有氰基的特定结构单元，具有酸解离基的结构单元和具有内酯骨架的特定结构单元。当在DUV准分子激光光刻或电子束光刻中使用上述聚合物作为抗蚀剂树脂时，其表现出高灵敏度和高分辨率，并且提供良好的抗蚀剂图案形状，线边缘粗糙度的发生程度小或微凝胶的产生。

4. 发明申请

US20090263743A1 RESIST POLYMER AND RESIST COMPOSITION 有权
标题翻译：耐聚合物和耐腐蚀组合物
公开(公告)号：US20090263743A1
公开(公告)日：2009-10-22
申请号：US12496232
申请日：2009-07-01
申请人： Hikaru MOMOSE , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru MOMOSE , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03F7/20 , C08F24/00 , C08F10/00 , G03F7/004
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要翻译：本发明的抗蚀剂聚合物包含具有氰基的特定结构单元，具有酸解离基的结构单元和具有内酯骨架的特定结构单元。当在DUV准分子激光光刻或电子束光刻中使用上述聚合物作为抗蚀剂树脂时，其表现出高灵敏度和高分辨率，并且提供良好的抗蚀剂图案形状，线边缘粗糙度的发生程度小或微凝胶的产生。

5. 发明授权

US07575846B2 Resist polymer and resist composition 有权
标题翻译：抗聚合物和抗蚀剂组成
公开(公告)号：US07575846B2
公开(公告)日：2009-08-18
申请号：US10543914
申请日：2004-01-29
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03C1/73 , G03F7/039 , C08F120/70 , C08F24/00
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要翻译：本发明的抗蚀剂聚合物包含具有氰基的特定结构单元，具有酸解离基的结构单元和具有内酯骨架的特定结构单元。当在DUV准分子激光光刻或电子束光刻中使用上述聚合物作为抗蚀剂树脂时，其表现出高灵敏度和高分辨率，并且提供良好的抗蚀剂图案形状，线边缘粗糙度的发生程度小或微凝胶的产生。

6. 发明申请

US20060127801A1 Resist polymer and resist composition 有权
公开(公告)号：US20060127801A1
公开(公告)日：2006-06-15
申请号：US10543914
申请日：2004-01-29
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Kayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Kayashi , Takeshi Iwai
IPC分类号： G03C1/76
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.

7. 发明申请

US20080063975A1 Polymer, Positive Resist Composition and Method for Forming Resist Pattern 有权
标题翻译：聚合物，正电阻组合物和形成抗蚀剂图案的方法
公开(公告)号：US20080063975A1
公开(公告)日：2008-03-13
申请号：US11628172
申请日：2005-06-02
申请人： Masaru Takeshita , Hideo Hada , Ryotaro Hayashi , Takeshi Iwai , Syogo Matsumaru , Satoshi Fujimura
发明人： Masaru Takeshita , Hideo Hada , Ryotaro Hayashi , Takeshi Iwai , Syogo Matsumaru , Satoshi Fujimura
IPC分类号： C08G63/08 , G03F1/00 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： A polymer, a positive resist composition, and a method for forming a resist pattern that are able to form a resist pattern with a high level of resolution and excellent etching resistance. The present invention uses a polymer that contains a structural unit (a1) represented by a general formula (a-1) shown below and a structural unit (a2) represented by a general formula (a-2) shown below, another polymer that contains the structural unit (a1) and a structural unit (a3) represented by a general formula (a-3) shown below, and another polymer that contains the structural unit (a1), the structural unit (a2), and the structural unit (a3).
摘要翻译：聚合物，正性抗蚀剂组合物和形成能够以高分辨率和优异耐蚀刻性形成抗蚀剂图案的抗蚀剂图案的方法。本发明使用含有下述通式（a-1）表示的结构单元（a1）和下述通式（a-2）表示的结构单元（a2）的聚合物，该聚合物含有结构单元（a1）和由下述通式（a-3）表示的结构单元（a3）和含有结构单元（a1），结构单元（a2）和结构单元（ a3）。

8. 发明授权

US07312015B2 Process for refining crude resin for electronic material 有权
标题翻译：电解材料粗树脂精制工艺
公开(公告)号：US07312015B2
公开(公告)日：2007-12-25
申请号：US10543263
申请日：2004-01-28
申请人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
发明人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
IPC分类号： G03C1/76 , G03C1/492 , G03C1/494 , C08F6/00 , C08J3/00
CPC分类号： C08J3/14 , C08J2333/04 , G03F7/0397
摘要： A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (a1) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.
摘要翻译：提供了一种方法，用于有效地除去副产物，例如包含在用于电子材料的粗树脂中的低聚物，从而制备用于电子材料的树脂。在该方法中，使用（b1）能够将所述粗树脂溶解在电子材料中的有机溶剂洗涤含有（a1）衍生自具有亲水部位的（甲基）丙烯酸酯的结构单元的电子材料用粗制树脂当与水结合时分离成两层，（b2）水。

9. 发明授权

US07763412B2 Polymer, positive resist composition and method for forming resist pattern 有权
标题翻译：聚合物，正性抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07763412B2
公开(公告)日：2010-07-27
申请号：US11628172
申请日：2005-06-02
申请人： Masaru Takeshita , Hideo Hada , Ryotaro Hayashi , Takeshi Iwai , Syogo Matsumaru , Satoshi Fujimura
发明人： Masaru Takeshita , Hideo Hada , Ryotaro Hayashi , Takeshi Iwai , Syogo Matsumaru , Satoshi Fujimura
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： A polymer, a positive resist composition, and a method for forming a resist pattern that are able to form a resist pattern with a high level of resolution and excellent etching resistance. The present invention uses a polymer that contains a structural unit (a1) represented by a general formula (a-1) shown below and a structural unit (a2) represented by a general formula (a-2) shown below, another polymer that contains the structural unit (a1) and a structural unit (a3) represented by a general formula (a-3) shown below, and another polymer that contains the structural unit (a1), the structural unit (a2), and the structural unit (a3).
摘要翻译：聚合物，正性抗蚀剂组合物和形成能够以高分辨率和优异耐蚀刻性形成抗蚀剂图案的抗蚀剂图案的方法。本发明使用含有下述通式（a-1）表示的结构单元（a1）和下述通式（a-2）表示的结构单元（a2）的聚合物，该聚合物含有结构单元（a1）和由下述通式（a-3）表示的结构单元（a3）和含有结构单元（a1）的另一种聚合物，结构单元（a2）和结构单元 a3）。

10. 发明申请

US20070105038A1 Positive resist composition and method for forming resist pattern 审中-公开
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20070105038A1
公开(公告)日：2007-05-10
申请号：US10580768
申请日：2004-11-24
申请人： Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03C1/00
CPC分类号： G03F7/0397
摘要： A positive resist composition that includes a base resin component (A) and an acid generator component (B), wherein the component (A) is a copolymer that includes structural units (a-1), which are derived from an (α-lower alkyl) acrylate ester that contains an acid dissociable, dissolution inhibiting group, and also contains an aliphatic cyclic group, structural units (a-2), which are derived from an (α-lower alkyl) acrylate ester that contains a γ-butyrolactone residue, and structural units (a-3), which are derived from an (α-lower alkyl) acrylate ester that contains a hydroxyl group-containing aliphatic polycyclic hydrocarbon group, and the glass transition temperature (Tg) of the copolymer is within a range from 100 to 170° C.; together with a method for forming a resist pattern using a lithography process that includes the steps of applying a chemically amplified positive resist composition to a substrate to provide a resist film, conducting selective exposure of the resist film, performing post exposure baking (PEB), and then conducting alkali developing, wherein the PEB temperature in the lithography process is set to a temperature within ±2° C. of the PEB temperature at which the line and space pattern formed by this lithography process reaches a maximum.
摘要翻译：包含基础树脂组分（A）和酸产生剂组分（B）的正性抗蚀剂组合物，其中组分（A）是包含结构单元（a-1）的共聚物，其衍生自（α-低级烷基）丙烯酸酯，其含有酸解离，溶解抑制基团，并且还含有脂肪族环状基团，由含有γ-丁内酯残基的（α-低级烷基）丙烯酸酯衍生的结构单元（a-2），和由含有含羟基的脂族多环烃基的（α-低级烷基）丙烯酸酯衍生的结构单元（a-3），共聚物的玻璃化转变温度（Tg）在一定范围内从100℃到170℃。以及使用光刻工艺形成抗蚀剂图案的方法，其包括以下步骤：将化学放大的正性抗蚀剂组合物施加到基底上以提供抗蚀剂膜，进行抗蚀剂膜的选择性曝光，进行曝光后烘烤（PEB），然后进行碱显影，其中光刻工艺中的PEB温度设定为由该光刻工艺形成的线和空间图案达到最大值的PEB温度的±2℃以内的温度。

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