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1. 发明申请

US20110294302A1 Method for Fast Macropore Etching in n-Type Silicon 失效
标题翻译：在n型硅中快速大孔蚀刻的方法
公开(公告)号：US20110294302A1
公开(公告)日：2011-12-01
申请号：US12921035
申请日：2009-02-28
申请人： Emmanuel Ossei-Wusu , Ala Cojocaru , Juergen Carstensen , Helmut Foell
发明人： Emmanuel Ossei-Wusu , Ala Cojocaru , Juergen Carstensen , Helmut Foell
IPC分类号： H01L21/3063
CPC分类号： H01L21/3063 , C25F3/12
摘要： Method for the electrochemical etching of macropores in n-type silicon wafers, using illumination of the wafer reverse sides and using an aqueous electrolyte, characterized in that the electrolyte is an aqueous acetic acid solution with the composition of H2O: CH3COOH in the range between 2:1 and 7:3, with an addition of at least 9 percent by weight hydrofluoric acid.
摘要翻译：用于在n型硅晶片中电化学蚀刻大孔的方法，使用晶片反面的照射和使用含水电解质，其特征在于电解质是乙酸水溶液，其组成为H 2 O：CH 3 COOH，范围为2 ：1和7：3，加入至少9重量％的氢氟酸。

2. 发明授权

US4563976A Device for manufacturing large-surface, tape-shaped silicon bodies for solar cells 失效
标题翻译：用于制造太阳能电池的大面积，带状硅体的装置
公开(公告)号：US4563976A
公开(公告)日：1986-01-14
申请号：US512733
申请日：1983-07-11
申请人： Helmut Foell , Josef Grabmaier , Richard Falckenberg
发明人： Helmut Foell , Josef Grabmaier , Richard Falckenberg
IPC分类号： C30B15/06 , C30B15/00 , C30B29/06 , B05C3/15 , B05C11/02
CPC分类号： C30B15/007 , Y10S117/903 , Y10T117/1048 , Y10T117/1056
摘要： In an exemplary embodiment, tape-shaped silicon bodies for solar cells are formed by continuous coating of a carrier body having a mesh structure. A melt bath receives the silicon melt and has a floor part with capillary openings therein for supplying the melt, the capillary openings leading perpendicularly toward the exterior of the vat and proceeding parallel to one another, and wherein a channel for the guidance of the carrier body proceeding in a horizontal direction is disposed below the melt vat in the region of the capillary openings. The guide channel for the carrier body can also be disposed above a body with capillaries proceeding parallel in a vertical direction, the body being partially immersed in the vat containing the silicon melt for the purpose of supplying the melt via the capillaries. The devices enable continuous tape drawing from a silicon melt wherein convection currents are avoided in the melt.
摘要翻译：在一个示例性实施例中，用于太阳能电池的带状硅体通过具有网状结构的载体主体的连续涂覆而形成。熔体槽容纳硅熔体并且具有用于供应熔体的毛细管开口的底部部件，毛细管开口垂直朝向槽的外部引导并且彼此平行地延伸，并且其中用于引导载体主体的通道沿着水平方向延伸设置在毛细管开口区域内的熔体槽的下方。用于承载体的引导通道也可以设置在主体上方，毛细管沿垂直方向平行地延伸，该主体部分地浸入含有硅熔体的槽中，以便通过毛细管供应熔体。这些装置能够从硅熔体连续地进行拉制，其中在熔体中避免对流。

3. 发明授权

US08580102B2 Method for the fast macropore etching in n-type silicon 失效
标题翻译：在n型硅中快速大孔蚀刻的方法
公开(公告)号：US08580102B2
公开(公告)日：2013-11-12
申请号：US12921035
申请日：2009-02-28
申请人： Emmanuel Ossei-Wusu , Ala Cojocaru , Juergen Carstensen , Helmut Foell
发明人： Emmanuel Ossei-Wusu , Ala Cojocaru , Juergen Carstensen , Helmut Foell
IPC分类号： C25F3/12
CPC分类号： H01L21/3063 , C25F3/12
摘要： Method for the electrochemical etching of macropores in n-type silicon wafers, using illumination of the wafer reverse sides and using an aqueous electrolyte, characterized in that the electrolyte is an aqueous acetic acid solution with the composition of H2O:CH3COOH in the range between 2:1 and 7:3, with an addition of at least 9 percent by weight hydrofluoric acid.
摘要翻译：用于在n型硅晶片中电化学蚀刻大孔的方法，使用晶片反面的照射和使用含水电解质，其特征在于电解质是乙酸水溶液，其组成为H 2 O：CH 3 COOH，范围为2 ：1和7：3，加入至少9重量％的氢氟酸。

4. 发明授权

US5130643A Method for determining the recombination rate of minority carriers at boundary surfaces between semiconductors and other substances 失效
标题翻译：用于确定少数载体在半导体与其他物质之间的边界表面的重组速率的方法
公开(公告)号：US5130643A
公开(公告)日：1992-07-14
申请号：US617588
申请日：1990-11-26
申请人： Helmut Foell , Volker Lehmann
发明人： Helmut Foell , Volker Lehmann
IPC分类号： G01N21/00 , G01R31/265 , H01L21/66
CPC分类号： G01R31/2656
摘要： For a two-stage measuring method, a respective cell having an electrode therein is applied to the front surface and to the rear surface of a semiconductor wafer, whereby only the cell as the rear surface is filled with an electrolyte in the first measuring step. The minority carrier photo current I.sub.2 ' flowing between the electrode and the semiconductor surface in the rear cell, given illumination of the front cell of the semiconductor crystal wafer, is dependent on the recombination speed S at the front surface. In the second measuring step, the front cell is also filled with electrolyte and both the rear surface photo current I.sub.2, given what is now a negligible influence of the value S as well as the front surface photo current I.sub.1 are measured. The recombination speed S can be calculated from the measure photo currents with the assistance of a mathematical equation. Given point-by-point illumination and scanning over the crystal wafer, the topical distribution of the recombination speed is obtained.
摘要翻译：对于两级测量方法，其中具有电极的各个单元被施加到半导体晶片的前表面和后表面，由此在第一测量步骤中仅仅将电池作为后表面填充有电解质。在半导体晶体晶片的正面单元的照明下，在电池中的电极和半导体表面之间流动的少数载流子光电流I2'取决于前表面的复合速度S. 在第二测量步骤中，前电池还充满电解质，并且测量了现在对值S以及前表面光电流I1可忽略的影响的背面光电流I2。可以借助于数学方程式从测量光电流计算复合速度S. 通过逐点照明和晶片上的扫描，可获得复合速度的局部分布。

5. 发明授权

US5128514A Black radiator for use as an emitter in calibratable gas sensors 失效
标题翻译：用作可校准气体传感器中的发射器的黑色散热器
公开(公告)号：US5128514A
公开(公告)日：1992-07-07
申请号：US212799
申请日：1988-06-29
申请人： Volker Lehmann , Helmut Foell
发明人： Volker Lehmann , Helmut Foell
IPC分类号： G01J3/10 , G01J5/52 , G01N21/01 , G01N21/3504 , H05B3/20 , H05B3/26
CPC分类号： H05B3/265 , G01J5/522 , G01N21/3504 , H05B2203/032
摘要： The black radiator contains a doped, crystalline silicon member having a honeycombed surface and contains a controllable electrical heating mechanism with which the silicon member can be heated. The heating mechanism has a heating coil that is a doped silicon structure that is oppositely doped to the doping of the silicon member and to which a controllable voltage is applied. The manufacturing method provides that the silicon member having a honeycombed surface be manufactured from an n-silicon member by electrolytic etching.
摘要翻译：黑色散热器包含具有蜂窝表面的掺杂的结晶硅构件，并且包含可加热硅构件的可控电加热机构。加热机构具有加热线圈，该加热线圈是与硅构件的掺杂相反地掺杂并且施加可控电压的掺杂硅结构。制造方法提供具有蜂窝表面的硅构件通过电解蚀刻由n硅构件制造。

6. 发明授权

US4874484A Etching method for generating apertured openings or trenches in layers or substrates composed of n-doped silicon 失效
标题翻译：用于在由n掺杂硅组成的层或衬底中产生有孔开口或沟槽的蚀刻方法
公开(公告)号：US4874484A
公开(公告)日：1989-10-17
申请号：US193760
申请日：1988-05-13
申请人： Helmut Foell , Volker Lehmann
发明人： Helmut Foell , Volker Lehmann
IPC分类号： H01L21/3063 , H01L29/10 , H01L29/739 , H01L29/744 , H01L29/92 , H01L29/93
CPC分类号： H01L29/744 , H01L21/3063 , H01L29/102 , H01L29/1066 , H01L29/7392 , H01L29/92 , H01L29/93
摘要： The present invention provides the production of apertured openings or trenches in layers or substrates composed of n-doped silicon proceeding in an electrolytic way, whereby the silicon is connected as a positively polarized electrode of an electrolysis cell containing an agent that contains hydrofluoric acid. Hole structures having highly variable cross-section can be reproducibly manufactured with the method of the invention and holes can be localized by prescribing nuclei. The invention can be used in the manufacture of trench cells in memory modules, insulating trenches in LSI semiconductor circuits, large-area capacitors (varicaps), and in contacting more deeply disposed layers in disconnectable and voltage-controlled thyristors.
摘要翻译：本发明提供了以电解方式制造由n掺杂硅组成的层或衬底的有孔开口或沟槽，由此将硅作为包含含有氢氟酸的试剂的电解槽的正极化电极连接。具有高度可变横截面的孔结构可以通过本发明的方法重现地制造，并且可以通过处方核来定位孔。本发明可用于制造存储器模块中的沟槽电池，LSI半导体电路中的绝缘沟槽，大面积电容器（变容片）以及在可分离和压控晶闸管中更深层设置的层。

7. 发明授权

US4481235A Apparatus and method for manufacturing tape-shaped silicon bodies for solar cells 失效
标题翻译：太阳能电池用带状硅体的制造方法
公开(公告)号：US4481235A
公开(公告)日：1984-11-06
申请号：US531678
申请日：1983-09-13
申请人： Helmut Foell , Bernhard Freienstein , Karl Geim , Josef Grabmaier , Otmar Hintringer
发明人： Helmut Foell , Bernhard Freienstein , Karl Geim , Josef Grabmaier , Otmar Hintringer
IPC分类号： H01L31/04 , B05C9/04 , C30B15/00 , C30B15/08 , B05D5/12 , B05C3/12 , B05D1/18
CPC分类号： C30B15/08 , C30B15/002 , C30B15/007 , B05C9/04 , Y10S118/18
摘要： A method and apparatus for manufacturing tape-shaped silicon bodies for solar cells wherein a tape-shaped reticulate carrier is passed vertically downwardly through a drawing nozzle including a slot which is full of molten silicon. The drawing nozzle is located above the level of molten silicon in a vat containing such molten silicon, and capillary means are provided to deliver the molten silicon from the vat into the drawing nozzle to fill the same with the molten silicon.
摘要翻译：一种用于制造用于太阳能电池的带状硅体的方法和装置，其中带状网状载体垂直向下通过包括充满熔融硅的槽的拉丝喷嘴。绘图喷嘴位于含有这种熔融硅的桶中的熔融硅层的上方，并且提供毛细管装置以将熔融硅从槽中输送到拉伸喷嘴中以与熔融硅填充相同。

8. 发明授权

US5209833A Method and apparatus for large-area electrical contacting of a semiconductor crystal body with the assistance of electrolytes 失效
标题翻译：电解质辅助半导体晶体的大面积电接触方法与装置
公开(公告)号：US5209833A
公开(公告)日：1993-05-11
申请号：US527277
申请日：1990-05-22
申请人： Helmut Foell , Volker Lehmann
发明人： Helmut Foell , Volker Lehmann
IPC分类号： H01L21/66 , G01R31/265
CPC分类号： G01R31/2656
摘要： A semiconductor crystal wafer is fixed between two electrolyte-filled cells so that the front surface and rear surface thereof are respectively in contact with an electrolyte. A respective electrode is located in the electrolyte, a DC voltage being applied between these electrodes so that the semiconductor-to-electrolyte contact of the one cell is polarized in the conducting direction and the other is polarized in the non-conducting direction. A current flow through the semiconductor crystal body is enabled in that the inhibiting surface of the semiconductor crystal is illuminated and charge carriers are generated as a result thereof. On the basis of the selection of suitable electrolytes and the intensity of illumination, high current density is possible even given high-impedance semiconductor crystal wafers as well as semiconductor crystal bodies having doping steps or pn junctions. The method is particularly simple in many semiconductor processing and analyses methods.
摘要翻译：将半导体晶体晶片固定在两个电解质填充单元之间，使其前表面和后表面分别与电解质接触。相应的电极位于电解质中，在这些电极之间施加直流电压，使得一个电池的半导体与电解质的接触在导电方向上极化，另一个在非导通方向上极化。通过半导体晶体的电流可以被实现，因为半导体晶体的抑制表面被照亮，因此产生电荷载流子。在选择合适的电解质和照明强度的基础上，即使给出高阻抗半导体晶体晶片以及具有掺杂步骤或pn结的半导体晶体，也可以实现高电流密度。该方法在许多半导体处理和分析方法中特别简单。

9. 发明授权

US4841239A Method and measuring instrument for identifying the diffusion length of the minority charge carriers for non-destructive detection of flaws and impurities in semiconductor crystal bodies 失效
标题翻译：用于识别少数电荷载体的扩散长度的方法和测量仪器用于半导体晶体中缺陷和杂质的非破坏性检测
公开(公告)号：US4841239A
公开(公告)日：1989-06-20
申请号：US197603
申请日：1988-05-20
申请人： Helmut Foell , Volker Lehmann
发明人： Helmut Foell , Volker Lehmann
IPC分类号： G01N27/00 , G01R31/265 , H01L21/66
CPC分类号： G01R31/265
摘要： Method and measuring instrument for identifying the diffusion length of minority charge carriers for non-destructive detection of flaws and impurities in semiconductor crystal bodies. The method provides that the semiconductor crystal body is positioned between two electrolyte-filled measuring chamber halves and that the minority charge carriers of the photocurrent that results at a front side of the semiconductor crystal body due to irradiation is detected by an applied constant voltage between a backside of the semiconductor crystal body and a rear electrolyte at the backside of the semiconductor crystal body. Taking the thickness (D) of the semiconductor crystal body into consideration, the diffusion length (L) can be calculated from a mathematical equation using the quotient of the minority charge carrier current I.sub.G I/.sub.O occurring at the backside and at the front side of the semiconductor crystal body. The method provides topically resolved measurements for irradiation of the semiconductor crystal body. A measuring instrument for the implementation of the method is disclosed. The method can be used for determining the quality of semiconductor crystals.
摘要翻译：用于识别少数电荷载体的扩散长度的方法和测量仪器用于半导体晶体中缺陷和杂质的非破坏性检测。该方法提供半导体晶体位于两个电解质填充的测量室半部之间，并且通过施加的恒定电压来检测由于照射而导致半导体晶体的前侧的光电流的少数电荷载流子半导体晶体的背面和半导体晶体的背面的后电解质。考虑到半导体晶体的厚度（D），扩散长度（L）可以从数学方程式使用在后侧和前面出现的少数载流子电流IGI / O的商来计算半导体晶体。该方法提供用于半导体晶体的照射的局部分辨测量。公开了一种用于实施该方法的测量仪器。该方法可用于确定半导体晶体的质量。

10. 发明授权

US4557793A Method and apparatus for drawing crystalline bodies from a melt 失效
标题翻译：从熔体中提取晶体的方法和装置
公开(公告)号：US4557793A
公开(公告)日：1985-12-10
申请号：US573729
申请日：1984-01-25
申请人： Helmut Foell , Josef Grabmaier , Juergen Schneider
发明人： Helmut Foell , Josef Grabmaier , Juergen Schneider
IPC分类号： C30B15/24 , C30B15/34
CPC分类号： C30B15/34 , Y10S117/90 , Y10T117/104 , Y10T117/1044
摘要： This invention involves a method and apparatus for drawing crystalline bodies from a melt by means of an open-ended drawing nozzle which determines the cross-sectional geometry of the crystalline body. The drawing nozzle is composed of a material which is resistant to the melt. The feed of melt proceeds from a reservoir situated at the lower end of the drawing nozzle and the melt is conveyed to the upper opening thereof by capillary action. In keeping with the present invention, there is provided a drawing nozzle which has an upper opening merging into a contoured surface such that the meniscus formed at the interface between the crystalline and molten phases is freely displaceable on the contoured surface into which the upper opening discharges.
摘要翻译：本发明涉及一种用于通过确定晶体的横截面几何形状的开口绘图喷嘴从熔体中提取晶体的方法和装置。拉丝喷嘴由耐熔融材料构成。熔体进料来自位于拉伸喷嘴下端的储存器，熔体通过毛细管作用输送到其上部开口。根据本发明，提供了一种绘图喷嘴，其具有合并成轮廓表面的上部开口，使得在结晶相和熔融相之间的界面处形成的弯液面可以在上部开口排出的轮廓表面上自由移动。

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