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1. 发明授权

US07055896B2 Roof box device and roof module with integrated roof box device 失效
标题翻译：屋顶箱装置和具有集成屋顶箱装置的屋顶模块
公开(公告)号：US07055896B2
公开(公告)日：2006-06-06
申请号：US10932172
申请日：2004-09-01
申请人： Kerim Ozkok , Michael Konig , Hans-Joachim Ludwig
发明人： Kerim Ozkok , Michael Konig , Hans-Joachim Ludwig
IPC分类号： B60J7/00
CPC分类号： B60R9/04 , B60R9/055 , B62D25/06 , B62D29/043 , B62D65/04
摘要： A roof module of a motor vehicle, wherein the roof module is manufactured from a plastic and a roof box device is integrally formed with the roof module in one piece.
摘要翻译：一种机动车辆的屋顶模块，其中屋顶模块由塑料制成，屋顶箱装置与屋顶模块整体形成为一体。

2. 发明授权

US06358824B1 Integrated circuits with tub-ties and shallow trench isolation 有权
标题翻译：集成电路具有管状和浅沟槽隔离
公开(公告)号：US06358824B1
公开(公告)日：2002-03-19
申请号：US09706319
申请日：2000-11-03
申请人： Hans-Joachim Ludwig Gossmann , Thi-Hong-Ha Vuong
发明人： Hans-Joachim Ludwig Gossmann , Thi-Hong-Ha Vuong
IPC分类号： H01L21425
CPC分类号： H01L21/76237 , H01L21/823878
摘要： A method of fabricating an IC comprises the steps of: (a) forming trench isolation regions in a surface of a semiconductor body; and (b) forming a tub-tie region between at least one pair of the trench isolation regions (when viewed in cross-section) by a process that includes the following steps: (b1) forming a first photolithographic mask that covers and is in registration with the tub-tie region; (b2) implanting ions of a first conductivity-type to form a tub region adjacent the tub-tie region; (b3) removing the first mask; (b4) forming a second photolithographic mask that has an opening that exposes most of the underlying tub-tie region but overlaps a first peripheral section on one side of the tub-tie region; (b5) implanting ions to form a pedestal portion of a second conductivity-type within the tub-tie region; and (b6) implanting ions of the first conductivity-type at an acute (preferably non-zero) angle −⊕ with respect to the normal to the surface to the body so as to form a conductivity-type localized first zone that extends into the first peripheral section. In a preferred embodiment, the first conductivity-type tub of step (b2) and the second conductivity-type pedestal of step (b5) are formed by implanting ions at an acute (non-zero) angle +&bgr; to the normal to the surface of the body. In another embodiment, between steps (b1) and (b3), the cap portion is angle-implanted to form a highly doped peripheral localized second zone of the second conductivity type located adjacent a different portion of one of said isolating regions. The second zone prevents any significant amount of charge build-up from taking place in the pedestal portion.
摘要翻译：一种制造IC的方法包括以下步骤：（a）在半导体本体的表面中形成沟槽隔离区; 和（b）在至少一对沟槽隔离区域之间（当横截面观察时）通过包括以下步骤的工艺形成管连接区域：（b1）形成覆盖并处于其中的第一光刻掩模与领带区域注册; （b2）注入第一导电类型的离子以形成与所述连接区相邻的盆区; （b3）去除第一掩模; （b4）形成第二光刻掩模，所述第二光刻掩模具有暴露所述下面的连接区域中的大部分但与所述连接区域的一侧上的第一外围部分重叠的开口; （b5）植入离子以在所述连接区域内形成第二导电类型的基座部分; 和（b6）将第一导电类型的离子相对于表面的法线相对于身体的锐角（优选非零）角度）注入，以便形成导电类型的局部第一区，其延伸到第一个周边部分。在优选实施例中，步骤（b2）的第一导电型桶和步骤（b5）的第二导电型基座通过以与表面法线成锐角（非零）角度+β的离子注入而形成的身体。在另一个实施例中，在步骤（b1）和（b3）之间，帽部分是角度注入的，以形成位于邻近所述隔离区域之一的不同部分的第二导电类型的高度掺杂的外围局部第二区域。第二区域防止在基座部分中发生任何显着量的电荷积聚。

3. 发明授权

US6153920A Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby 失效
标题翻译：用于控制半导体层中的掺杂剂扩散的方法和由此形成的半导体器件
公开(公告)号：US6153920A
公开(公告)日：2000-11-28
申请号：US15981
申请日：1998-01-30
申请人： Hans-Joachim Ludwig Gossmann , Conor Stefan Rafferty
发明人： Hans-Joachim Ludwig Gossmann , Conor Stefan Rafferty
IPC分类号： H01L21/205 , H01L21/22 , H01L21/265 , H01L29/08 , H01L29/10 , H01L29/167 , H01L29/786
CPC分类号： H01L29/78684 , H01L21/22 , H01L21/26546 , H01L29/0847 , H01L29/1079 , H01L29/167
摘要： A semiconductor device having a carbon-containing region with an advantageous concentration profile is disclosed. The carbon is introduced into a region of the substrate and at a depth below the space-charge layer of the device and at a concentration such that the carbon atoms absorb point defects created in the substrate during device fabrication but do not adversely affect the leakage characteristics of the device.
摘要翻译：公开了具有有利浓度分布的含碳区域的半导体器件。将碳引入到衬底的区域中并且在器件的空间电荷层下方的深度处，并且浓度使得碳原子吸收在器件制造期间在衬底中产生的点缺陷，但不会不利地影响漏电特性的设备。

4. 发明授权

US6043139A Process for controlling dopant diffusion in a semiconductor layer 失效
标题翻译：用于控制半导体层中的掺杂剂扩散的方法
公开(公告)号：US6043139A
公开(公告)日：2000-03-28
申请号：US563688
申请日：1995-11-28
申请人： David James Eaglesham , Hans-Joachim Ludwig Gossmann , John Milo Poate , Peter Adriaan Stolk
发明人： David James Eaglesham , Hans-Joachim Ludwig Gossmann , John Milo Poate , Peter Adriaan Stolk
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01L21/22 , H01L21/265 , H01L29/08 , H01L29/10 , H01L29/167 , H01L29/786
CPC分类号： H01L29/78684 , H01L21/22 , H01L21/26546 , H01L29/0847 , H01L29/1079 , H01L29/167 , H01L21/02381 , H01L21/02532 , H01L21/0262 , Y10S438/916 , Y10S438/918
摘要： Diffusion of ion-implanted dopant is controlled by incorporating electrically inactive impurity in a semiconductor layer by at least one crystal growth technique.
摘要翻译：通过至少一种晶体生长技术在半导体层中引入电惰性杂质来控制离子注入掺杂剂的扩散。

5. 发明申请

US20050046240A1 Roof box device and roof module with integrated roof box device 失效
标题翻译：屋顶箱装置和具有集成屋顶箱装置的屋顶模块
公开(公告)号：US20050046240A1
公开(公告)日：2005-03-03
申请号：US10932172
申请日：2004-09-01
申请人： Kerim Ozkok , Michael Konig , Hans-Joachim Ludwig
发明人： Kerim Ozkok , Michael Konig , Hans-Joachim Ludwig
IPC分类号： B60R9/055 , B62D25/06 , B62D29/04 , B62D65/04 , B60J7/00
CPC分类号： B60R9/04 , B60R9/055 , B62D25/06 , B62D29/043 , B62D65/04
摘要： A roof module of a motor vehicle, wherein the roof module is manufactured from a plastic and a roof box device is integrally formed with the roof module in one piece.
摘要翻译：一种机动车辆的屋顶模块，其中屋顶模块由塑料制成，屋顶箱装置与屋顶模块整体形成为一体。

6. 发明授权

US06403454B1 Silicon semiconductor devices with &dgr;-doped layers 有权
标题翻译：具有δ掺杂层的硅半导体器件
公开(公告)号：US06403454B1
公开(公告)日：2002-06-11
申请号：US09430316
申请日：1999-10-29
申请人： Paul H. Citrin , Hans-Joachim Ludwig Gossmann , David Anthony Muller
发明人： Paul H. Citrin , Hans-Joachim Ludwig Gossmann , David Anthony Muller
IPC分类号： H01L2104
CPC分类号： H01L29/78 , H01L21/02381 , H01L21/02576 , H01L21/02584 , H01L29/365
摘要： We have discovered that, contrary to conventional wisdom about forming DP defects, electrical saturation in highly doped 2D layers of Si does not occur. In accordance with one aspect of our invention, free-carrier concentrations in excess of about 7×1020 cm−3 can be attained in single crystal Si layers &dgr;-doped with a Group V element. In one embodiment, free-carrier concentrations in excess of about 2×1021 cm−3 are realized in single crystal Si that is &dgr;-doped with Sb. In another embodiment, the &dgr;-doped layer is formed as an integral part of an FET. In accordance with another aspect of our invention, an integrated circuit is fabricated by the steps of providing a single crystal silicon body and forming a doped layer in the body, characterized in that the processing steps form neither a significant amount of electrically inactive precipitates nor a significant number of deactivating dopant centers containing vacancies, and the layer is fabricated as a &dgr;-doped layer that is doped with a Group V element, so that the free-carrier density in the layer is in excess of about 7×1020 cm−3, preferably in excess of about 2×1021 cm−3.
摘要翻译：我们已经发现，与形成DP缺陷的常规智慧相反，不会发生高掺杂的2D层中的电饱和。根据本发明的一个方面，可以在掺杂有V族元素的单晶Si层中获得超过约7×10 20 cm -3的自由载流子浓度。在一个实施方案中，在掺杂Sb的单晶Si中实现超过约2×10 21 cm -3的自由载流子浓度。在另一个实施例中，Δ-掺杂层形成为FET的组成部分。根据本发明的另一方面，通过以下步骤制造集成电路：提供单晶硅体并在体内形成掺杂层，其特征在于，所述加工步骤既不形成大量的电不活泼的沉淀物也不形成显着数量的包含空位的失活掺杂剂中心，并且该层被制造为掺杂有V族元素的δ掺杂层，使得该层中的自由载流子密度超过约7×10 20 cm -3，优选超过约2×1021cm-3。

7. 发明授权

US5731626A Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby 失效
标题翻译：用于控制由其形成的半导体层和半导体层中的掺杂剂扩散的方法
公开(公告)号：US5731626A
公开(公告)日：1998-03-24
申请号：US862226
申请日：1997-05-23
申请人： David James Eaglesham , Hans-Joachim Ludwig Gossmann , John Milo Poate , Peter Adriaan Stolk
发明人： David James Eaglesham , Hans-Joachim Ludwig Gossmann , John Milo Poate , Peter Adriaan Stolk
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01L21/22 , H01L21/265 , H01L29/08 , H01L29/10 , H01L29/167 , H01L29/786
CPC分类号： H01L29/78684 , H01L21/22 , H01L21/26546 , H01L29/0847 , H01L29/1079 , H01L29/167 , H01L21/02381 , H01L21/02532 , H01L21/0262 , Y10S438/916 , Y10S438/918
摘要： Diffusion of ion-implanted dopant is controlled by incorporating electrically inactive impurity in a semiconductor layer by at least one crystal growth technique.
摘要翻译：通过至少一种晶体生长技术在半导体层中引入电惰性杂质来控制离子注入掺杂剂的扩散。

8. 发明授权

US08449018B2 Water assist injection moulded structural members 失效
标题翻译：辅助注塑结构件
公开(公告)号：US08449018B2
公开(公告)日：2013-05-28
申请号：US12438997
申请日：2007-08-29
申请人： Steven Grgac , Hans-Joachim Ludwig , Gerhard Fischer , Martin McLeod
发明人： Steven Grgac , Hans-Joachim Ludwig , Gerhard Fischer , Martin McLeod
IPC分类号： B60R13/01 , B62D25/06
CPC分类号： B29C45/0005 , B29C45/1711 , B29C2045/1707 , B29C2045/172 , B29K2105/12 , B29L2031/3005
摘要： A method of forming members of fiber reinforced thermoplastic members via molding, the members including at least one hollow chamber, formed by water injection into the melt in the mold, to stiffen the finished member. The thermoplastic is preferably selected from a group comprising polypropylene, Nylon, PET, ABS, TPO, and thermoplastic polyurethane, while the reinforcing fibers are preferably selected from a group comprising glass, aramid, carbon, and natural fibers. Preferably, the extruded melt is produced such that the average length of the reinforcing fibers is less than four millimeters.
摘要翻译：通过模制形成纤维增强热塑性构件的构件的方法，所述构件包括通过注入模具中的熔体中的水而形成的至少一个中空室，以加固最终构件。热塑性聚合物优选选自包括聚丙烯，尼龙，PET，ABS，TPO和热塑性聚氨酯的组，而增强纤维优选选自玻璃，芳族聚酰胺，碳和天然纤维。优选地，制造挤出的熔体，使得增强纤维的平均长度小于4毫米。

9. 发明授权

US07055897B2 Motor vehicle roof module with integrated securing device 失效
标题翻译：具有集成固定装置的汽车车顶模块
公开(公告)号：US07055897B2
公开(公告)日：2006-06-06
申请号：US10932249
申请日：2004-09-01
申请人： Kerim Ozkok , Michael Konig , Hans-Joachim Ludwig
发明人： Kerim Ozkok , Michael Konig , Hans-Joachim Ludwig
IPC分类号： B60R7/00
CPC分类号： B60R9/04
摘要： A roof module of a motor vehicle with at least one securing device for a roof carrier system, the securing device being formed in one piece with the roof module.
摘要翻译：具有至少一个用于屋顶承载系统的固定装置的机动车辆的车顶模块，所述固定装置与所述车顶模块形成一体。

10. 发明授权

US06632728B2 Increasing the electrical activation of ion-implanted dopants 有权
标题翻译：增加离子注入掺杂剂的电活化
公开(公告)号：US06632728B2
公开(公告)日：2003-10-14
申请号：US09906211
申请日：2001-07-16
申请人： Hans-Joachim Ludwig Gossmann , Conor Stefan Rafferty , Tony E. Haynes , Ramki Kalyanaraman , Vincent C. Venezia , Maria Lourdes Pelaz-Montes
发明人： Hans-Joachim Ludwig Gossmann , Conor Stefan Rafferty , Tony E. Haynes , Ramki Kalyanaraman , Vincent C. Venezia , Maria Lourdes Pelaz-Montes
IPC分类号： H01L21265
CPC分类号： H01L21/26513 , H01L21/26506 , H01L29/66575
摘要： We have found that under certain prescribed conditions a co-implantation process can be effective in increasing the electrical activation of implanted dopant ions. In accordance with one aspect of our invention, a method of making a semiconductor device includes the steps of providing a single crystal semiconductor body, implanting vacancy-generating, ions into a preselected region of the body, implanting dopant ions into the preselected region, the dopant implant forming interstitial defects in the body, and annealing the body to electrically activate the dopant ions. Importantly, in our method the vacancy-generating implant introduces vacancy defects into the preselected region that are effective to annihilate the interstitial defects. In addition, process steps that amorphize the surface of the implanted region are avoided, and the dose of the vacancy-generating implant is made to be greater than that of the dopant implant. In a preferred embodiment, the peak of the vacancy defect concentration profile substantially overlaps the peak of the dopant implant concentration profile. In another preferred embodiment the peak of the vacancy-generating implant profile is deeper than that of the dopant profile. In accordance with another aspect of our invention, after ion implantation is complete, only low temperature process steps (e.g., steps performed at temperatures no greater than about 800° C. for Si devices) are performed.
摘要翻译：我们已经发现，在某些规定条件下，共同注入工艺可以有效地增加注入的掺杂剂离子的电活化。根据本发明的一个方面，制造半导体器件的方法包括以下步骤：提供单晶半导体器件，将产生空位的离子注入到身体的预选区域中，将掺杂剂离子注入预选区域，掺杂剂注入物在体内形成间隙缺陷，并退火身体以电激活掺杂剂离子。重要的是，在我们的方法中，产生空位的植入物将缺陷缺陷引入到预选区域中，这有效地消除间质缺陷。此外，避免了植入区域的表面非晶化的工艺步骤，并且使空位产生植入物的剂量大于掺杂剂注入的剂量。在优选的实施方案中，空位缺陷浓度分布的峰值基本上与掺杂剂注入浓度分布的峰值重叠。在另一优选实施例中，产生空位的注入轮廓的峰值比掺杂剂分布的峰值更深。根据本发明的另一方面，在离子注入完成之后，仅执行低温工艺步骤（例如，对于Si器件在不高于约800℃的温度下执行的步骤）。

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