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1. 发明申请

US20050180032A1 Outside mirror apparatus for vehicle and illuminating unit for outside mirror apparatus 失效
标题翻译：车外用镜面装置及外镜装置用照明装置
公开(公告)号：US20050180032A1
公开(公告)日：2005-08-18
申请号：US11041876
申请日：2005-01-25
申请人： Hideki Seguchi , Hajime Yagi
发明人： Hideki Seguchi , Hajime Yagi
IPC分类号： B60Q1/24 , B60Q1/26 , B60Q1/34 , B60Q1/44 , B60R1/06 , B60R1/12 , F21S8/10 , F21W101/12 , F21Y101/02 , G02B3/02
CPC分类号： B60Q1/2665 , B60R1/1207
摘要： An outside mirror apparatus for a vehicle includes an illuminating unit that includes a light source including a plurality of light emitting elements arranged on a flexible sheet member; a base including a mounting section for mounting the light source; and a lens that divides, with the base, a lamp chamber that contains the light source. The light source is mounted on the mounting section in a curved state or in a bent state.
摘要翻译：一种用于车辆的外部镜子装置，包括：照明单元，包括：光源，包括布置在柔性片状部件上的多个发光元件; 基座，包括用于安装光源的安装部分; 以及与基座分开包含光源的灯室的透镜。光源以弯曲状态或弯曲状态安装在安装部上。

2. 发明授权

US06399429B1 Method of forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device 失效
标题翻译：形成单晶硅层的方法，半导体器件的制造方法以及半导体器件
公开(公告)号：US06399429B1
公开(公告)日：2002-06-04
申请号：US09486619
申请日：2000-02-29
申请人： Hisayoshi Yamoto , Hideo Yamanaka , Yuichi Satou , Hajime Yagi
发明人： Hisayoshi Yamoto , Hideo Yamanaka , Yuichi Satou , Hajime Yagi
IPC分类号： H01L2100
CPC分类号： H01L27/127 , C30B25/02 , C30B29/06 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/76262 , H01L21/86 , H01L27/1214 , H01L29/66757 , H01L29/6678
摘要： Single-crystal silicon is deposited on an insulating substrate (1) with a crystalline sapphire layer (50) formed thereon as a seed, to form a silicon epitaxial layer (7). P-type impurity ions are implanted into a single-crystal silicon layer, and then N-type impurity ions are implanted to make a P-channel MOS transistor portion a single-crystal silicon layer (14). In a single-crystal silicon layer (11), an N+ source region (20) and drain region (21) of an N-channel MOS transistor are formed. Thus, a silicon layer is epitaxially grown uniformly at low temperatures.
摘要翻译：将单晶硅沉积在其上形成有晶体蓝宝石层（50）的绝缘基板（1）上，以形成硅外延层（7）。将P型杂质离子注入到单晶硅层中，然后注入N型杂质离子以使P沟道MOS晶体管部分成为单晶硅层（14）。在单晶硅层（11）中，形成N沟道MOS晶体管的N +源极区（20）和漏极区（21）。因此，硅层在低温下均匀地外延生长。

3. 发明授权

US4793886A Bonding method and adhesive useful for the method 失效
标题翻译：粘合方法和粘合剂对该方法有用
公开(公告)号：US4793886A
公开(公告)日：1988-12-27
申请号：US69187
申请日：1987-07-02
申请人： Naomi Okamura , Hiroshi Aoki , Junzo Makino , Hajime Yagi , Yasuo Arai , Takashi Yamanaka
发明人： Naomi Okamura , Hiroshi Aoki , Junzo Makino , Hajime Yagi , Yasuo Arai , Takashi Yamanaka
IPC分类号： C08L35/04 , C08L83/04 , C09J5/04 , C09J5/02
CPC分类号： C09J5/04 , C08L35/04 , C08L83/04 , C09J2483/00 , Y10T428/31536
摘要： A method for bonding two objects by means of the following two adhesives:(A) a moisture-inducible room temperature anion polymerization curing adhesive composed essentially of at least one anion polymerizable compound selected from the group consisting of an .alpha.-cyanoacrylate compound, and a 1,1-disubstituted diene compound;and(B) a room temperature self-curing adhesive containing from 0.05 to 50% by weight of an anion polymerization accelerator, said self-curing adhesive being selected from the group consisting of (1) a room temperature moisture-curing adhesive, (2) a room temperature curing two-part type epoxy resin adhesive, and (3) a room temperature curing synthetic resin aqueous emulsion adhesive, which comprises applying said two adhesives (A) and (B) at the bonding interface of the objects so that they do not contact each other and pressing the objects to each other to bring the two adhesives in contact with each other.
摘要翻译：一种通过以下两种粘合剂粘结两个物体的方法：（A）一种水分诱导型室温阴离子聚合固化粘合剂，其基本上由至少一种选自由α-氰基丙烯酸酯化合物组成的组的阴离子可聚合化合物和 1,1-二取代二烯化合物; 和（B）含有0.05〜50重量％阴离子聚合促进剂的室温自固化粘合剂，所述自固化粘合剂选自（1）室温湿固化粘合剂，（2））室温固化二部分型环氧树脂粘合剂，和（3）室温固化合成树脂水乳液粘合剂，其包括在物体的粘合界面处施加所述两种粘合剂（A）和（B），使得它们不要彼此接触并且彼此按压物体以使两个粘合剂彼此接触。

4. 发明授权

US4038680A Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路设备
公开(公告)号：US4038680A
公开(公告)日：1977-07-26
申请号：US654758
申请日：1976-02-03
申请人： Hajime Yagi , Tadaharu Tsuyuki
发明人： Hajime Yagi , Tadaharu Tsuyuki
IPC分类号： H01L21/00 , H01L21/761 , H01L21/8222 , H01L27/00 , H01L27/07 , H01L27/082 , H01L29/00 , H01L29/08 , H01L29/732 , H01L29/74 , H01L27/02 , H01L27/04 , H01L29/72
CPC分类号： H01L29/7436 , H01L21/00 , H01L21/761 , H01L21/8222 , H01L27/00 , H01L27/0716 , H01L27/0766 , H01L27/0826 , H01L29/00 , H01L29/0804 , H01L29/7322 , H01L29/74 , Y10S257/918
摘要： A semiconductor integrated circuit device having a construction of complementary PNP-NPN semiconductor devices in a monolithic integrated form. First and second N type epitaxial layers are formed on a common P type semiconductor substrate. A base region of the PNP transistor is produced by the diffusion of an impurity into the second epitaxial layer. The NPN transistor is formed as low emitter concentration type transistor and a part of the second epitaxial layer serves as the emitter region of the NPN transistor.

5. 发明授权

US4007474A Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion 失效
标题翻译：晶体管具有具有低杂质浓度部分和高杂质浓度部分的发射极
公开(公告)号：US4007474A
公开(公告)日：1977-02-08
申请号：US561914
申请日：1975-03-25
申请人： Hajime Yagi , Tadaharu Tsuyuki
发明人： Hajime Yagi , Tadaharu Tsuyuki
IPC分类号： H01L27/082 , H01L29/08 , H01L29/72 , H01L27/02 , H01L29/00
CPC分类号： H01L29/0804 , H01L27/0826 , H01L29/0839 , Y10S148/037 , Y10S148/085 , Y10S148/151 , Y10S148/157
摘要： A semiconductor device having a high current amplification gain which includes a low impurity concentration in the emitter region of the device, an injected minority carrier diffusion length L greater than the width of the emitter, and a high impurity concentration region of the same type as the emitter overlying at least a portion of said emitter region which provides a built-in-field where there is a drift current of minority carriers back toward the base region. The built-in field is larger than kT(qL) so that the drift current adjacent the built-in-field substantially cancels the minority carrier diffusion current injected from the base region.
摘要翻译：具有高电流放大增益的半导体器件，其包括在器件的发射极区域中的低杂质浓度，大于发射极宽度的注入的少数载流子扩散长度L和与该发射极的相同类型的高杂质浓度区域发射极覆盖所述发射极区域的至少一部分，其提供内部场，其中少数载流子的漂移电流返回到基极区域。内置场大于kT（qL），使得与内置场相邻的漂移电流基本上抵消从基极区域注入的少数载流子扩散电流。

6. 发明授权

US4000506A Bipolar transistor circuit 失效
标题翻译：双极晶体管电路
公开(公告)号：US4000506A
公开(公告)日：1976-12-28
申请号：US566259
申请日：1975-04-09
申请人： Susumu Hirai , Kunizo Suzuki , Hajime Yagi
发明人： Susumu Hirai , Kunizo Suzuki , Hajime Yagi
IPC分类号： H01L27/00 , H01L29/00 , H01L29/73 , H01L29/72
CPC分类号： H01L29/00 , H01L27/00 , H01L29/73 , C07C2101/14
摘要： A transistor circuit comprising a bipolar transistor with high input impedance is disclosed. The transistor has low emitter-base conductance, and especially has a low conductance component caused by the recombination of minority carriers in an emitter. The emitter capacitance caused by stored minority carriers is low because of the low conductance component. These enable emitter-grounded operation at high current gain and high frequency.
摘要翻译：公开了一种包括具有高输入阻抗的双极晶体管的晶体管电路。晶体管具有低的发射极 - 基极导电性，并且特别地具有由发射极中的少数载流子的复合引起的低电导分量。存储的少数载流子引起的发射极电容由于低电导分量而较低。这些使得在高电流增益和高频率下的发射极接地操作。

7. 发明授权

US07704326B2 Deposition mask and manufacturing method thereof 失效
标题翻译：沉积掩模及其制造方法
公开(公告)号：US07704326B2
公开(公告)日：2010-04-27
申请号：US11004335
申请日：2004-12-02
申请人： Nobuo Hagiwara , Hideo Nagasaki , Tsutomu Mori , Tatsushiro Hirata , Hajime Yagi
发明人： Nobuo Hagiwara , Hideo Nagasaki , Tsutomu Mori , Tatsushiro Hirata , Hajime Yagi
IPC分类号： C23C16/00 , C23C16/04
CPC分类号： C23C14/042 , C23C14/12 , H01L27/3211 , H01L51/0011
摘要： A deposition mask with which position precision of a passage hole is improved and deposition can be conducted precisely and a manufacturing method thereof are provided. A mask body made of a metal thin film is fixed and tightly mounted on a frame body having an opening. The mask body has at least one pattern region including a plurality of passage holes for letting through a deposition material, a stress relaxation region including a plurality of fine holes provided at the periphery of the pattern region, and a holding region provided at the periphery of the stress relaxation region. The mask body is tightly mounted on the frame body at a holding region.
摘要翻译：提供了通过孔的位置精度提高并且精确地进行沉积的沉积掩模及其制造方法。由金属薄膜制成的面罩体固定并牢固地安装在具有开口的框体上。荫罩主体具有至少一个图案区域，该图案区域包括多个通过沉积材料的通孔，包括设置在图案区域的周边的多个细孔的应力松弛区域和设置在图案区域周边的保持区域应力松弛区域。面罩体在保持区域紧密地安装在框体上。

8. 发明申请

US20090178584A1 PRINTING MACHINE NIP CHECKING SYSTEM AND PROGRAM 审中-公开
标题翻译：打印机NIP检查系统和程序
公开(公告)号：US20090178584A1
公开(公告)日：2009-07-16
申请号：US12160539
申请日：2007-02-26
申请人： Yasuhiro Mochizuki , Hajime Yagi , Yasuhiko Hirata , Kazunori Seto , Yoshiro Matsuura , Takeshi Satoh , Satoshi Morimoto
发明人： Yasuhiro Mochizuki , Hajime Yagi , Yasuhiko Hirata , Kazunori Seto , Yoshiro Matsuura , Takeshi Satoh , Satoshi Morimoto
IPC分类号： B41L1/02 , B41F33/00
CPC分类号： B41F13/24 , B41F33/02 , B41F33/04 , B41F33/14 , B41F33/16
摘要： An object is to provide a printing machine nip checking system and the like that facilitates a nip checking operation. In the invention, a subject roller selecting section 10 is provided that selects a roller of which a nip width is to be checked. When a subject is narrowed, a main gear rotation angle calculating section 11 determines a rotation angle of the selected roller, in addition to a rotation direction. A main gear rotation driving section 13 connected to the main gear rotation angle calculating section 11 rotates a main gear 18 by the calculated desired angle, after the main gear 18 is stopped for a certain amount of time. As a result, an operator can visually recognize a nip on a subject gear without particularly considering the rotation direction and the rotation angle of the main gear 18.
摘要翻译：目的在于提供一种便于压区检查操作的印刷机辊隙检查系统等。在本发明中，提供了选择要检查压区宽度的辊的主体辊选择部10。当被摄体变窄时，除了旋转方向之外，主齿轮旋转角计算部11还确定所选择的辊的旋转角度。与主齿轮转角计算部11连接的主齿轮旋转驱动部13在主齿轮18停止一定时间后，使主齿轮18旋转计算出的期望角度。结果，操作者可以在不特别考虑主齿轮18的旋转方向和旋转角度的情况下目视识别出被摄体齿轮上的辊隙。

9. 发明授权

US07407298B2 Vehicle door mirror with pulse modulation control 失效
标题翻译：车门镜带脉冲调制控制
公开(公告)号：US07407298B2
公开(公告)日：2008-08-05
申请号：US11405697
申请日：2006-04-18
申请人： Hiroyasu Onuki , Takashi Ogawa , Hajime Yagi
发明人： Hiroyasu Onuki , Takashi Ogawa , Hajime Yagi
IPC分类号： B60R1/074 , H02P1/04
CPC分类号： B60R1/074
摘要： A vehicle door mirror is configured to be mounted on outside of a vehicle in a retractable manner from a set position to a retracted position. When moving to the set position or the retracted position, the vehicle door mirror is moved at a first speed from a start position to a position right before a stop position, and is further moved from the position right before the stop position to the stop position at a second speed that is slower than the first speed.
摘要翻译：车门后视镜被构造成以可缩回的方式从设置位置安装到车辆的外部到缩回位置。当移动到设定位置或缩回位置时，车门镜以第一速度从起始位置移动到停止位置之前的位置，并且进一步从停止位置之前的位置移动到停止位置以比第一速度慢的第二速度。

10. 发明授权

US07095082B2 Electrooptical device, substrate for driving electrooptical device and methods for making the same 失效
公开(公告)号：US07095082B2
公开(公告)日：2006-08-22
申请号：US09975680
申请日：2001-10-10
申请人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Sato , Hajime Yagi
发明人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Sato , Hajime Yagi
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： G02F1/13454 , G02F2202/105 , G09B5/04 , G09B19/06 , G10L21/06
摘要： Each of an electrooptical device and a driving substrate for the electrooptical device includes a first substrate having a display section provided with pixel electrodes and a peripheral-driving-circuit section provided on the periphery of the display section, a second substrate, and an optical material disposed between the first substrate and the second substrate. A gate section including a gate electrode and a gate-insulating film is formed on one surface of the first substrate, a compound layer having high lattice matching with single-crystal silicon is formed on the surface of the first substrate, and a single-crystal silicon layer is formed on the first substrate including the compound layer and the gate section. The single-crystal silicon layer constitutes a channel region, a source region, and a drain region. In addition, a first bottom-gate thin-film transistor having the gate section is formed below the channel region, the first bottom-gate thin-film transistor constituting at least a part of the peripheral-driving-circuit section.

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