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1. 发明授权

US06399429B1 Method of forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device 失效
标题翻译：形成单晶硅层的方法，半导体器件的制造方法以及半导体器件
公开(公告)号：US06399429B1
公开(公告)日：2002-06-04
申请号：US09486619
申请日：2000-02-29
申请人： Hisayoshi Yamoto , Hideo Yamanaka , Yuichi Satou , Hajime Yagi
发明人： Hisayoshi Yamoto , Hideo Yamanaka , Yuichi Satou , Hajime Yagi
IPC分类号： H01L2100
CPC分类号： H01L27/127 , C30B25/02 , C30B29/06 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/76262 , H01L21/86 , H01L27/1214 , H01L29/66757 , H01L29/6678
摘要： Single-crystal silicon is deposited on an insulating substrate (1) with a crystalline sapphire layer (50) formed thereon as a seed, to form a silicon epitaxial layer (7). P-type impurity ions are implanted into a single-crystal silicon layer, and then N-type impurity ions are implanted to make a P-channel MOS transistor portion a single-crystal silicon layer (14). In a single-crystal silicon layer (11), an N+ source region (20) and drain region (21) of an N-channel MOS transistor are formed. Thus, a silicon layer is epitaxially grown uniformly at low temperatures.
摘要翻译：将单晶硅沉积在其上形成有晶体蓝宝石层（50）的绝缘基板（1）上，以形成硅外延层（7）。将P型杂质离子注入到单晶硅层中，然后注入N型杂质离子以使P沟道MOS晶体管部分成为单晶硅层（14）。在单晶硅层（11）中，形成N沟道MOS晶体管的N +源极区（20）和漏极区（21）。因此，硅层在低温下均匀地外延生长。

2. 发明授权

US06825070B2 Electro-optical apparatus, driving substrate for an electro-optical apparatus and method of manufacturing them 失效
标题翻译：电光装置，电光装置用驱动基板及其制造方法
公开(公告)号：US06825070B2
公开(公告)日：2004-11-30
申请号：US10301839
申请日：2002-11-22
申请人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Satou , Hajime Yagi
发明人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Satou , Hajime Yagi
IPC分类号： H01L2136
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/1214 , H01L27/127 , H01L29/66772 , H01L29/78621 , H01L29/78645 , H01L29/78648
摘要： A single crystal silicon is graphoepitaxially grown using a step formed on a substrate as a seed by a catalyst process, and the obtained single crystal silicon layer is used for a dual gate type MOSTFT in an electro-optical apparatus such as a display section of a peripheral driving circuit integration type LCD. A single crystal silicon thin film having high electron/hole mobility is formed into a uniform film at a relatively low temperature, which enables the manufacturing of an active matrix substrate incorporated with a high-performance driver which can be used in a TFT display.
摘要翻译：使用通过催化剂工艺在作为晶种的基板上形成台阶的方法将单晶硅生长，并将得到的单晶硅层用于诸如显示部分的电光装置中的双栅型MOSTFT 外围驱动电路集成型LCD。具有高电子/空穴迁移率的单晶硅薄膜在相对较低的温度下形成均匀的膜，这使得能够制造掺入可用于TFT显示器的高性能驱动器的有源矩阵基板。

3. 发明授权

US06346718B1 Electro-optic device, drive substrate for electro-optic device and method of manufacturing the same 失效
标题翻译：电光装置，电光装置用驱动基板及其制造方法
公开(公告)号：US06346718B1
公开(公告)日：2002-02-12
申请号：US09413497
申请日：1999-10-06
申请人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Satou , Hajime Yagi
发明人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Satou , Hajime Yagi
IPC分类号： H01L2974
CPC分类号： H01L29/6678 , G02F1/13454 , H01L27/12 , H01L29/66772 , H01L29/78603 , H01L29/78621 , H01L29/78648 , H01L29/78654
摘要： An electro-optic device, such as an LCD, includes a display unit and a peripheral drive circuit unit on a single substrate. A gate comprising a gate electrode and gate insulation film is formed on a surface of the substrate. A layer of a substance having good lattice compatibility with monocrystalline silicon is formed over the gate insulation film. A layer of monocrystalline silicon is formed over the substance layer. Monocrystalline silicon is heteroepitaxially grown by catalytic CVD or the like using a crystalline sapphire film formed on the substrate to form the monocrystalline silicon layer. The monocrystalline silicon layer is used as a dual gate MOSTFT of the electro-optic device.
摘要翻译：诸如LCD的电光装置在单个基板上包括显示单元和外围驱动电路单元。在基板的表面上形成包括栅电极和栅极绝缘膜的栅极。在栅极绝缘膜上形成与单晶硅具有良好晶格相容性的物质层。在物质层上形成一层单晶硅。单晶硅通过催化CVD等异质外延生长，使用形成在基板上的结晶蓝宝石膜形成单晶硅层。单晶硅层用作电光器件的双栅MOSTFT。

4. 发明授权

US06504215B1 Electro-optical apparatus having a display section and a peripheral driving circuit section 失效
标题翻译：具有显示部和外围驱动电路部的电光装置
公开(公告)号：US06504215B1
公开(公告)日：2003-01-07
申请号：US09406138
申请日：1999-09-27
申请人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Satou , Hajime Yagi
发明人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Satou , Hajime Yagi
IPC分类号： H01L2701
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/1214 , H01L27/127 , H01L29/66772 , H01L29/78621 , H01L29/78645 , H01L29/78648
摘要： A single crystal silicon is graphoepitaxially grown using a step formed on a substrate as a seed by a catalyst process, and the obtained single crystal silicon layer is used for a dual gate type MOSTFT in an electro-optical apparatus such as a display section of a peripheral driving circuit integration type LCD. A single crystal silicon thin film having high electron/hole mobility is formed into a uniform film at a relatively low temperature, which enables the manufacturing of an active matrix substrate incorporated with a high-performance driver which can be used in a TFT display.
摘要翻译：使用通过催化剂工艺在作为晶种的基板上形成台阶的方法将单晶硅生长，并将得到的单晶硅层用于诸如显示部分的电光装置中的双栅型MOSTFT 外围驱动电路集成型LCD。具有高电子/空穴迁移率的单晶硅薄膜在相对较低的温度下形成均匀的膜，这使得能够制造掺入可用于TFT显示器的高性能驱动器的有源矩阵基板。

5. 发明授权

US06521525B2 Electro-optic device, drive substrate for electro-optic device and method of manufacturing the same 失效
标题翻译：电光装置，电光装置用驱动基板及其制造方法
公开(公告)号：US06521525B2
公开(公告)日：2003-02-18
申请号：US09993765
申请日：2001-11-27
申请人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Satou , Hajime Yagi
发明人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Satou , Hajime Yagi
IPC分类号： H01L31119
CPC分类号： H01L29/6678 , G02F1/13454 , H01L27/12 , H01L29/66772 , H01L29/78603 , H01L29/78621 , H01L29/78648 , H01L29/78654
摘要： An electro-optic device, such as an LCD, includes a display unit and a peripheral drive circuit unit on a single substrate. A gate comprising a gate electrode and gate insulation film is formed on a surface of the substrate. A layer of a substance having good lattice compatibility with manocrystalline silicon is formed over the gate insulation film. A layer of monocrystalline silicon is formed over the substance layer. Manocrystalline silicon is heteroepitaxially grown by catalytic CVD or the like using a crystalline sapphire film formed on the substrate to form the monocrystalline silicon layer. The monocrystalline silican layer is used as a dual gate MOSTFT of the electro-optic device.
摘要翻译：诸如LCD的电光装置在单个基板上包括显示单元和外围驱动电路单元。在基板的表面上形成包括栅电极和栅极绝缘膜的栅极。在栅极绝缘膜上形成有与晶体硅具有良好晶格相容性的物质层。在物质层上形成一层单晶硅。通过使用形成在基板上的结晶蓝宝石膜通过催化CVD等异质外延生长晶硅以形成单晶硅层。单晶硅胶层用作电光器件的双栅MOSTFT。

6. 发明授权

US06492190B2 Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device 有权
标题翻译：电光装置的制造方法及驱动电光装置的驱动基板的制造方法
公开(公告)号：US06492190B2
公开(公告)日：2002-12-10
申请号：US09798832
申请日：2001-03-02
申请人： Hideo Yamanaka , Hisayoshi Yamoto , Yuuichi Sato , Hajime Yagi
发明人： Hideo Yamanaka , Hisayoshi Yamoto , Yuuichi Sato , Hajime Yagi
IPC分类号： H01L2100
CPC分类号： C30B13/00 , C30B29/06 , G02F1/13454 , H01L21/02532 , H01L21/02625 , H01L21/02628 , H01L29/42384 , H01L29/78603 , H01L29/78609 , H01L29/78621 , H01L29/78648
摘要： A single-crystal silicon layer is formed by graphoepitaxy from a low-melting-point metal layer which contains dissolved polycrystalline or amorphous silicon, or from a melt of a silicon-containing low-melting-point metal, using step differences formed on a substrate as a seed for the epitaxial growth. This single-crystal silicon layer is used as dual-gate MOSTFTS, or bottom-gate MOSTFTS, of an electrooptical device such as an LCD integrating a display section and a peripheral-driving-circuit section. This process enables production of a uniform single-crystal silicon thin-film having high electron/hole mobility at a relatively low temperature. The display section includes LDD-nMOSTFTs or pMOSTFTs having high switching characteristics and a low leakage current. The peripheral-driving-circuit section includes cMOSTFTs, nMOSTFTs, pMOSTFTs, or a combination thereof, having high driving ability.
摘要翻译：单晶硅层通过使用含有溶解的多晶或非晶硅的低熔点金属层或从含硅低熔点金属的熔体利用在基板上形成的台阶差而进行的图案形成作为外延生长的种子。该单晶硅层用作诸如集成显示部分和外围驱动电路部分的LCD的电光器件的双栅MOSTFTS或底栅MOSTFTS。该方法能够在相对低的温度下生产具有高电子/空穴迁移率的均匀的单晶硅薄膜。显示部分包括具有高开关特性和低漏电流的LDD-nMOSTFT或pMOSTFT。外围驱动电路部分包括具有高驱动能力的cMOSTFT，nMOSTFT，pMOSTFT或其组合。

7. 发明授权

US06372558B1 Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate 失效
标题翻译：电光装置，电光装置用驱动基板及其制造方法
公开(公告)号：US06372558B1
公开(公告)日：2002-04-16
申请号：US09376840
申请日：1999-08-18
申请人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Sato , Hajime Yagi
发明人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Sato , Hajime Yagi
IPC分类号： H01L2100
CPC分类号： H01L27/127 , G02F1/13454 , G02F1/136227 , G02F1/1368 , G02F2202/105 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/2205 , H01L27/1214 , H01L27/1251 , H01L27/1296 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/6678 , H01L29/78603 , H01L29/78621 , H01L29/78648
摘要： The present invention provides an active matrix substrate having a built-in high-performance driver, in which a single crystal silicon thin film having high electron/hole mobility is uniformly deposited at a relatively low temperature, and an electrooptic device such as a thin film semiconductor device for display including the active matrix substrate. The single crystal silicon thin film is deposited by hetero epitaxial growth by a catalytic CVD method or the like using a crystalline sapphire thin film formed on the substrate as a seed so that the single crystal silicon layer obtained is used for top gate type MOSTFTs of the electrooptic device such as a LED or the like in which a display region and a peripheral driving circuit region are integrated.
摘要翻译：本发明提供一种具有内置高性能驱动器的有源矩阵基板，其中具有高电子/空穴迁移率的单晶硅薄膜在较低温度下均匀地沉积，并且电光装置如薄膜包括有源矩阵基板的显示用半导体装置。通过使用形成在基板上的晶体蓝宝石薄膜作为种子的催化CVD法等，通过异质外延生长来沉积单晶硅薄膜，使得所获得的单晶硅层用于顶栅型MOSTFT 集成了显示区域和外围驱动电路区域的电光装置，例如LED等。

8. 发明授权

US07095082B2 Electrooptical device, substrate for driving electrooptical device and methods for making the same 失效
公开(公告)号：US07095082B2
公开(公告)日：2006-08-22
申请号：US09975680
申请日：2001-10-10
申请人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Sato , Hajime Yagi
发明人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Sato , Hajime Yagi
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： G02F1/13454 , G02F2202/105 , G09B5/04 , G09B19/06 , G10L21/06
摘要： Each of an electrooptical device and a driving substrate for the electrooptical device includes a first substrate having a display section provided with pixel electrodes and a peripheral-driving-circuit section provided on the periphery of the display section, a second substrate, and an optical material disposed between the first substrate and the second substrate. A gate section including a gate electrode and a gate-insulating film is formed on one surface of the first substrate, a compound layer having high lattice matching with single-crystal silicon is formed on the surface of the first substrate, and a single-crystal silicon layer is formed on the first substrate including the compound layer and the gate section. The single-crystal silicon layer constitutes a channel region, a source region, and a drain region. In addition, a first bottom-gate thin-film transistor having the gate section is formed below the channel region, the first bottom-gate thin-film transistor constituting at least a part of the peripheral-driving-circuit section.

9. 发明授权

US06767755B2 Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device 失效
标题翻译：电光装置的制造方法及驱动电光装置的驱动基板的制造方法
公开(公告)号：US06767755B2
公开(公告)日：2004-07-27
申请号：US10300387
申请日：2002-11-20
申请人： Hideo Yamanaka , Hisayoshi Yamoto , Yuuichi Sato , Hajime Yagi
发明人： Hideo Yamanaka , Hisayoshi Yamoto , Yuuichi Sato , Hajime Yagi
IPC分类号： H01L2100
CPC分类号： C30B13/00 , C30B29/06 , G02F1/13454 , H01L21/02532 , H01L21/02625 , H01L21/02628 , H01L29/42384 , H01L29/78603 , H01L29/78609 , H01L29/78621 , H01L29/78648
摘要： A single-crystal silicon layer is formed by graphoepitaxy from a low-melting-point metal layer which contains dissolved polycrystalline or amorphous silicon, or from a melt of a silicon-containing low-melting-point metal, using step differences formed on a substrate as a seed for the epitaxial growth. This single-crystal silicon layer is used as dual-gate MOSTFTs, or bottom-gate MOSTFTs, of an electrooptical device such as an LCD integrating a display section and a peripheral-driving-circuit section. This process enables production of a uniform single-crystal silicon thin-film having high electron/hole mobility at a relatively low temperature. The display section includes LDD-nMOSTFTs or pMOSTFTs having high switching characteristics and a low leakage current. The peripheral-driving-circuit section includes cMOSTFTs, nMOSTFTs, pMOSTFTs, or a combination thereof, having high driving ability.

10. 发明授权

US06696309B2 Methods for making electrooptical device and driving substrate therefor 失效
标题翻译：制造电光装置和驱动基板的方法
公开(公告)号：US06696309B2
公开(公告)日：2004-02-24
申请号：US09798852
申请日：2001-03-02
申请人： Hideo Yamanaka , Hisayoshi Yamoto , Yuuichi Sato , Hajime Yagi
发明人： Hideo Yamanaka , Hisayoshi Yamoto , Yuuichi Sato , Hajime Yagi
IPC分类号： H01L2100
CPC分类号： H01L27/1251 , H01L27/1203 , H01L27/1214 , H01L29/045 , H01L29/78603 , H01L29/78636 , H01L29/78648 , H01L29/78657
摘要： An electrooptical device including a first substrate including a display section having pixel electrodes and a peripheral-driving-circuit section provided on a periphery of the display section, a second substrate, and an optical material disposed between the first substrate and the second substrate is produced as follows. A material layer having a high degree of lattice matching with single-crystal silicon is formed on one face of the first substrate. A polycrystalline or amorphous silicon layer is formed on the first substrate and then a low-melting-point metal layer is formed on or under the silicon layer on the first substrate, or a low-melting-point metal layer containing silicon is formed on the first substrate having the material layer. The silicon layer or the silicon is dissolved into the low-melting-point metal layer by a heat treatment. A single-crystal silicon layer precipitates from the silicon in the silicon layer or the silicon in the low-melting-point metal layer by heteroepitaxial growth including a cooling treatment using the material layer as a seed. The single-crystal silicon layer is treated through a predetermined process to form at least an active device between the active device and a passive device.
摘要翻译：一种电光装置，其包括：第一基板，其包括具有像素电极的显示部分和设置在显示部分的周围的外围驱动电路部分，第二基板和设置在第一基板和第二基板之间的光学材料如下。在第一衬底的一个面上形成具有与单晶硅的高度晶格匹配的材料层。在第一衬底上形成多晶或非晶硅层，然后在第一衬底上的硅层上或下形成低熔点金属层，或者在第一衬底上形成含有硅的低熔点金属层第一基板具有材料层。通过热处理将硅层或硅溶解在低熔点金属层中。单晶硅层通过异质外延生长包括硅层中的硅或低熔点金属层中的硅沉淀，包括使用材料层作为种子的冷却处理。通过预定的处理处理单晶硅层，以在有源器件和无源器件之间形成至少一个有源器件。

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