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1. 发明申请

US20110266634A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110266634A1
公开(公告)日：2011-11-03
申请号：US13184272
申请日：2011-07-15
申请人： Yong-Tae CHO , Hae-Jung LEE , Eun-Mi KIM , Kyeong-Hyo LEE
发明人： Yong-Tae CHO , Hae-Jung LEE , Eun-Mi KIM , Kyeong-Hyo LEE
IPC分类号： H01L29/78
CPC分类号： H01L29/66795 , H01L29/7851
摘要： In a semiconductor device and related method of fabricating the same, a hard mask layer is formed over a substrate, portions of the hard mask layer and the substrate are etched to form trenches having protruding portions at sidewalls, and an insulation layer buried in the trenches is formed to form device isolation regions having protruding portions at sidewalls, wherein the device isolation regions decrease a portion of a width of active regions.
摘要翻译：在制造半导体器件及其相关方法中，在衬底上形成硬掩模层，硬掩模层和衬底的部分被蚀刻以形成在侧壁具有突出部分的沟槽，并且埋在沟槽中的绝缘层被形成以形成在侧壁具有突出部分的器件隔离区域，其中器件隔离区域减小有效区域宽度的一部分。

2. 发明授权

US08003485B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08003485B2
公开(公告)日：2011-08-23
申请号：US12318466
申请日：2008-12-30
申请人： Yong-Tae Cho , Hae-Jung Lee , Eun-Mi Kim , Kyeong-Hyo Lee
发明人： Yong-Tae Cho , Hae-Jung Lee , Eun-Mi Kim , Kyeong-Hyo Lee
IPC分类号： H01L29/78 , H01L21/762
CPC分类号： H01L29/66795 , H01L29/7851
摘要： In a semiconductor device and related method of fabricating the same, a hard mask layer is formed over a substrate, portions of the hard mask layer and the substrate are etched to form trenches having protruding portions at sidewalls, and an insulation layer buried in the trenches is formed to form device isolation regions having protruding portions at sidewalls, wherein the device isolation regions decrease a portion of a width of active regions.
摘要翻译：在制造半导体器件及其相关方法中，在衬底上形成硬掩模层，硬掩模层和衬底的部分被蚀刻以形成在侧壁具有突出部分的沟槽，并且埋在沟槽中的绝缘层被形成以形成在侧壁具有突出部分的器件隔离区域，其中器件隔离区域减小有效区域宽度的一部分。

3. 发明申请

US20110159687A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110159687A1
公开(公告)日：2011-06-30
申请号：US12833081
申请日：2010-07-09
申请人： Hae-Jung Lee , Kang-Pok Lee , Kyeong-Hyo Lee
发明人： Hae-Jung Lee , Kang-Pok Lee , Kyeong-Hyo Lee
IPC分类号： H01L21/3213
CPC分类号： H01L21/76802 , H01L21/31116 , H01L21/32135
摘要： A method for fabricating a semiconductor device includes forming a plurality of plugs over a die region and an edge bead removal (EBR) region of a wafer, forming metal lines coupled to the plugs, removing the metal lines in the EBR region, forming an inter-layer dielectric layer over the wafer, and forming a plurality of contact holes that expose the metal lines by selectively etching the inter-layer dielectric layer through a dry etch process using a plasma etch device.
摘要翻译：一种制造半导体器件的方法包括在晶片的芯片区域和边缘珠去除（EBR）区域上形成多个插塞，形成耦合到插塞的金属线，去除EBR区域中的金属线，并且通过使用等离子体蚀刻装置的干蚀刻工艺选择性地蚀刻层间电介质层而形成多个接触孔，以暴露金属线。

4. 发明授权

US07957086B2 Hard disk drive apparatus, method to control flying height of magnetic head thereof, and recording media for computer program therefor 失效
标题翻译：硬盘驱动装置，用于控制磁头的飞行高度的方法以及用于计算机程序的记录介质
公开(公告)号：US07957086B2
公开(公告)日：2011-06-07
申请号：US12031943
申请日：2008-02-15
申请人： Chang-Hwan Lee , Hae Jung Lee
发明人： Chang-Hwan Lee , Hae Jung Lee
IPC分类号： G11B5/02
CPC分类号： G11B5/6064 , G11B5/607
摘要： A method of controlling a flying height of a magnetic head of a hard disk drive apparatus includes producing a reference FOD (flying on demand) voltage profile defining a relationship between the flying height of the magnetic head and an FOD voltage at a measured temperature, wherein an end of the magnetic head thermally expands and protrudes when the FOD voltage is applied to a heater included in the magnetic head and setting the reference FOD voltage profile that is corrected using a reference maximum flying height of the magnetic head that is preset at room temperature, as an applied FOD voltage profile to control the flying height of the magnetic head.
摘要翻译：一种控制硬盘驱动装置的磁头的飞行高度的方法包括产生定义磁头的飞行高度与测量温度下的FOD电压之间关系的参考FOD（随需飞行）电压分布，其中当将FOD电压施加到包括在磁头中的加热器时，磁头的端部热膨胀并突出，并且使用预设在室温下的磁头的参考最大飞行高度来设置校正的参考FOD电压分布作为应用的FOD电压分布来控制磁头的飞行高度。

5. 发明申请

US20110080820A1 METHOD OF SETTING ZONE LAYOUT OF RECORDING MEDIUM, AND APPARATUS USING METHOD 失效
标题翻译：记录介质区域布局的方法和使用方法的装置
公开(公告)号：US20110080820A1
公开(公告)日：2011-04-07
申请号：US12894248
申请日：2010-09-30
申请人： Jae-chul SHIM , Hae-Jung LEE
发明人： Jae-chul SHIM , Hae-Jung LEE
IPC分类号： G11B27/36
CPC分类号： G11B5/09 , G11B20/10009 , G11B20/1037 , G11B20/10481 , G11B20/1258 , G11B2020/1242 , G11B2020/1289 , G11B2020/1292 , G11B2220/2516
摘要： A data storage device determines a zone layout based on a quality evaluation factor. The zone layout is designed such that a measurement value of the quality evaluation factor for each track in each zone is within a range between a predetermined upper limit and a predetermined lower limit and a maximum amount of variation of the measurement value within each zone is substantially equal to a difference between the upper limit and the lower limit.
摘要翻译：数据存储设备基于质量评估因子确定区域布局。区域布局被设计成使得每个区域中的每个轨道的质量评估因子的测量值在预定上限和预定下限之间的范围内，并且每个区域内的测量值的最大变化量基本上等于上限和下限之间的差值。

6. 发明申请

US20100062598A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH METAL LINE 失效
标题翻译：用金属线制造半导体器件的方法
公开(公告)号：US20100062598A1
公开(公告)日：2010-03-11
申请号：US12618523
申请日：2009-11-13
申请人： Hae-Jung LEE , Sang-Hoon Cho , Suk-Ki Kim
发明人： Hae-Jung LEE , Sang-Hoon Cho , Suk-Ki Kim
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/32115 , H01L21/32136 , H01L21/76843 , H01L21/76849
摘要： A method for fabricating a semiconductor device includes forming an inter-layer insulation layer on a substrate; forming openings in the inter-layer insulation layer; forming a metal barrier layer in the openings and on the inter-layer insulation layer; forming a first conductive layer on the metal barrier layer and filled in the openings; etching the first conductive layer to form interconnection layers in the openings and to expose portions of the metal barrier layer, the interconnection layers being inside the openings and at a depth from a top of the openings; etching the exposed portions of the metal barrier layer to obtain a sloped profile of the metal barrier layer at top lateral portions of the openings; forming a second conductive layer over the inter-layer insulation layer, the interconnection layers and the metal barrier layer with the sloped profile; and patterning the second conductive layer to form metal lines.
摘要翻译：一种制造半导体器件的方法包括在衬底上形成层间绝缘层; 在层间绝缘层中形成开口; 在开口和层间绝缘层上形成金属阻挡层; 在所述金属阻挡层上形成第一导电层并填充在所述开口中; 蚀刻所述第一导电层以在所述开口中形成互连层并且暴露所述金属阻挡层的部分，所述互连层位于所述开口内部以及在距所述开口顶部的深度处; 蚀刻金属阻挡层的暴露部分以在开口的顶侧部分处获得金属阻挡层的倾斜轮廓; 在所述层间绝缘层上形成第二导电层，所述互连层和所述金属阻挡层具有所述倾斜轮廓; 并且图案化第二导电层以形成金属线。

7. 发明申请

US20080198497A1 HARD DISK DRIVE APPARATUS, METHOD TO CONTROL FLYING HEIGHT OF MAGNETIC HEAD THEREOF, AND RECORDING MEDIA FOR COMPUTER PROGRAM THEREFOR 失效
标题翻译：硬盘驱动装置，用于控制其磁头的飞行高度的方法和用于其计算机程序的记录介质
公开(公告)号：US20080198497A1
公开(公告)日：2008-08-21
申请号：US12031943
申请日：2008-02-15
申请人： Chang-Hwan Lee , Hae Jung Lee
发明人： Chang-Hwan Lee , Hae Jung Lee
IPC分类号： G11B5/02
CPC分类号： G11B5/6064 , G11B5/607
摘要： A method of controlling a flying height of a magnetic head of a hard disk drive apparatus includes producing a reference FOD (flying on demand) voltage profile defining a relationship between the flying height of the magnetic head and an FOD voltage at a measured temperature, wherein an end of the magnetic head thermally expands and protrudes when the FOD voltage is applied to a heater included in the magnetic head and setting the reference FOD voltage profile that is corrected using a reference maximum flying height of the magnetic head that is preset at room temperature, as an applied FOD voltage profile to control the flying height of the magnetic head.
摘要翻译：一种控制硬盘驱动装置的磁头的飞行高度的方法包括产生定义磁头的飞行高度与测量温度下的FOD电压之间关系的参考FOD（随需飞行）电压分布，其中当将FOD电压施加到包括在磁头中的加热器时，磁头的端部热膨胀并突出，并且使用预设在室温下的磁头的参考最大飞行高度来设置校正的参考FOD电压分布作为应用的FOD电压分布来控制磁头的飞行高度。

8. 发明申请

US20070148979A1 Method for fabricating semiconductor device having top round recess pattern 审中-公开
标题翻译：制造具有顶部圆形凹槽图案的半导体器件的方法
公开(公告)号：US20070148979A1
公开(公告)日：2007-06-28
申请号：US11413162
申请日：2006-04-28
申请人： Hae-Jung Lee , Yong-Tae Cho
发明人： Hae-Jung Lee , Yong-Tae Cho
IPC分类号： C23F1/00 , H01L21/461 , B44C1/22 , H01L21/302
CPC分类号： H01L21/3065 , H01L21/3081 , H01L29/4236 , H01L29/66621
摘要： A method for forming a semiconductor device having a recess pattern with a rounded top corner is provided. The method includes forming an etch mask pattern including a patterned sacrificial layer and a patterned hard mask layer over a substrate; etching predetermined portions of exposed sidewalls of the patterned sacrificial layer to form an undercut; etching the substrate to a predetermined depth using the etch mask pattern as an etch mask to form a recess having top corners; and performing an isotropic etching process to round the top corners of the recess beneath the undercut.
摘要翻译：提供了一种用于形成具有带有圆角顶角的凹陷图案的半导体器件的方法。该方法包括在衬底上形成包括图案化牺牲层和图案化硬掩模层的蚀刻掩模图案; 蚀刻图案化牺牲层的暴露的侧壁的预定部分以形成底切; 使用蚀刻掩模图案作为蚀刻掩模将衬底蚀刻到预定深度，以形成具有顶角的凹部; 并执行各向同性蚀刻工艺以使底切下方的凹部的顶角圆角。

9. 发明授权

US07035031B2 Installation of heater into hard disk drive to improve reliability and performance at low temperature 失效
公开(公告)号：US07035031B2
公开(公告)日：2006-04-25
申请号：US10001846
申请日：2001-11-26
申请人： Weonwoo Kim , Hae Jung Lee , Sang Y. Lee
发明人： Weonwoo Kim , Hae Jung Lee , Sang Y. Lee
IPC分类号： G11B19/02 , G11B33/14
CPC分类号： G11B33/1406 , G11B5/40 , G11B25/043 , G11B33/144
摘要： A hard disk drive that includes a heater to heat an internal cavity of the drive. The disk drive may also have a temperature sensor to sense the temperature of the internal cavity, and a control circuit to control the heater and maintain the disk drive cavity, to be no less than a threshold temperature. The threshold temperature may correspond to a point where the heads of the drive undergo a significant degradation of performance. Maintaining the disk drive cavity temperature at or above the threshold temperature insures that the heads will not degrade due to temperature.

10. 发明授权

US5908735A Method of removing polymer of semiconductor device 失效
标题翻译：去除半导体器件聚合物的方法
公开(公告)号：US5908735A
公开(公告)日：1999-06-01
申请号：US752882
申请日：1996-11-20
申请人： Sang Wook Kim , Hae Jung Lee , Il Seok Seo
发明人： Sang Wook Kim , Hae Jung Lee , Il Seok Seo
IPC分类号： G03F7/42 , H01L21/311 , G03F7/00
CPC分类号： H01L21/31116 , H01L21/31138 , G03F7/42
摘要： A method of removing a polymer of a semiconductor device is disclosed including the steps of: forming a photoresist pattern on a to-be-etched layer; etching the to-be-etched layer using a mixed gas containing carbon/fluorine compound and oxygen gas with the use of the photoresist pattern; and removing the photoresist pattern at a temperature of below 200 C., and at the same time, dry-etching a polymer, the polymer being generated during the etching of the to-be-etched layer, the photoresist pattern being removed in a dry etching chamber.
摘要翻译：公开了一种去除半导体器件的聚合物的方法，包括以下步骤：在被蚀刻层上形成光刻胶图案; 使用含有碳/氟化合物和氧气的混合气体利用光致抗蚀剂图案蚀刻被蚀刻层; 并在低于200℃的温度下去除光致抗蚀剂图案，并且同时干燥蚀刻聚合物，该聚合物是在蚀刻蚀刻层的蚀刻过程中产生的，光刻胶图案被干燥地除去蚀刻室。

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