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1. 发明授权

US5908735A Method of removing polymer of semiconductor device 失效
标题翻译：去除半导体器件聚合物的方法
公开(公告)号：US5908735A
公开(公告)日：1999-06-01
申请号：US752882
申请日：1996-11-20
申请人： Sang Wook Kim , Hae Jung Lee , Il Seok Seo
发明人： Sang Wook Kim , Hae Jung Lee , Il Seok Seo
IPC分类号： G03F7/42 , H01L21/311 , G03F7/00
CPC分类号： H01L21/31116 , H01L21/31138 , G03F7/42
摘要： A method of removing a polymer of a semiconductor device is disclosed including the steps of: forming a photoresist pattern on a to-be-etched layer; etching the to-be-etched layer using a mixed gas containing carbon/fluorine compound and oxygen gas with the use of the photoresist pattern; and removing the photoresist pattern at a temperature of below 200 C., and at the same time, dry-etching a polymer, the polymer being generated during the etching of the to-be-etched layer, the photoresist pattern being removed in a dry etching chamber.
摘要翻译：公开了一种去除半导体器件的聚合物的方法，包括以下步骤：在被蚀刻层上形成光刻胶图案; 使用含有碳/氟化合物和氧气的混合气体利用光致抗蚀剂图案蚀刻被蚀刻层; 并在低于200℃的温度下去除光致抗蚀剂图案，并且同时干燥蚀刻聚合物，该聚合物是在蚀刻蚀刻层的蚀刻过程中产生的，光刻胶图案被干燥地除去蚀刻室。

2. 发明授权

US5767019A Method for forming a fine contact hole in a semiconductor device 失效
标题翻译：在半导体器件中形成精细接触孔的方法
公开(公告)号：US5767019A
公开(公告)日：1998-06-16
申请号：US697834
申请日：1996-08-28
申请人： Sang Wook Kim , Hae Jung Lee
发明人： Sang Wook Kim , Hae Jung Lee
IPC分类号： H01L21/28 , H01L21/768 , H01L21/336
CPC分类号： H01L21/76804 , H01L21/76831 , Y02P80/30
摘要： Disclosed is a method for forming a fine contact hole, and more particularly, a method capable of minimizing the loss of a silicon substrate. In the method for forming the contact hole according to the present invention, since the spacer is formed on the sidewall in the contact hole at the time of performing the dry etching process which makes it wide the approach to the contact hole, the contact area is hardly damaged by the etchant. Then, the dry etching process in accordance with the present invention can minimizes the loss of the substrate because the substrate to be exposed is under the protection of the insulating layer 43. The substrate can be less damaged than 100
摘要翻译：公开了一种形成微细接触孔的方法，更具体地说，可以使硅衬底的损耗最小化的方法。在根据本发明的形成接触孔的方法中，由于在执行干蚀刻处理时在接触孔的侧壁上形成间隔物，这使接近孔接近，接触面积为几乎不被蚀刻剂损坏。然后，根据本发明的干法蚀刻工艺可以最大限度地减少衬底的损耗，因为待暴露的衬底处于绝缘层43的保护之下。衬底的损伤可能小于100

3. 发明授权

US09284676B2 Drum type washing machine 有权
标题翻译：鼓式洗衣机
公开(公告)号：US09284676B2
公开(公告)日：2016-03-15
申请号：US12461619
申请日：2009-08-18
申请人： Ji Hoon Choi , Phil Soo Chang , Bong Wha Kwak , Jeong Hoon Kang , Hoon Wee , Tae Jin Park , Sung Jin Cho , Sang Wook Kim , Gyu Sung Na
发明人： Ji Hoon Choi , Phil Soo Chang , Bong Wha Kwak , Jeong Hoon Kang , Hoon Wee , Tae Jin Park , Sung Jin Cho , Sang Wook Kim , Gyu Sung Na
IPC分类号： D06F37/02 , D06F37/26 , D06F37/20
CPC分类号： D06F37/26 , D06F37/20
摘要： Disclosed herein is a drum type washing machine including a body, a tub arranged in the body, and a drum rotatably installed in the tub, and an inner surface of a rear wall of the has a flat portion along a rotating direction of the drum.
摘要翻译：本文公开了一种滚筒式洗衣机，其包括主体，布置在主体中的桶和可旋转地安装在桶中的滚筒，并且其后壁的内表面具有沿着滚筒的旋转方向的平坦部分。

4. 发明申请

US20100058816A1 Drum type washing machine 有权
标题翻译：鼓式洗衣机
公开(公告)号：US20100058816A1
公开(公告)日：2010-03-11
申请号：US12461619
申请日：2009-08-18
申请人： Ji Hoon Choi , Phil Soo Chang , Bong Wha Kwak , Jeong Hoon Kang , Hoon Wee , Tae Jin Park , Sung Jin Cho , Sang Wook Kim , Gyu Sung Na
发明人： Ji Hoon Choi , Phil Soo Chang , Bong Wha Kwak , Jeong Hoon Kang , Hoon Wee , Tae Jin Park , Sung Jin Cho , Sang Wook Kim , Gyu Sung Na
IPC分类号： D06F21/00
CPC分类号： D06F37/26 , D06F37/20
摘要： Disclosed herein is a drum type washing machine including a body, a tub arranged in the body, and a drum rotatably installed in the tub, and an inner surface of a rear wall of the has a flat portion along a rotating direction of the drum.
摘要翻译：本文公开了一种滚筒式洗衣机，其包括主体，布置在主体中的桶和可旋转地安装在桶中的滚筒，并且其后壁的内表面具有沿着滚筒的旋转方向的平坦部分。

5. 发明授权

US07162490B2 Method for processing dynamic database in distributed processing system based on corba platform 失效
标题翻译：基于corba平台的分布式处理系统动态数据库处理方法
公开(公告)号：US07162490B2
公开(公告)日：2007-01-09
申请号：US10026538
申请日：2001-12-27
申请人： Sang Wook Kim , Young Wook Jun
发明人： Sang Wook Kim , Young Wook Jun
IPC分类号： G06F17/00 , G06F13/00 , G06F17/30
CPC分类号： G06F9/465 , G06F9/4484 , G06F17/30575 , Y10S707/99944
摘要： A method of processing a dynamic database in a distributed processing system based on CORBA platform includes calling a generic method in a server, detecting data by the called generic method, storing the detected data, and returning the detected data to a client, in the distributed processing system. The detected data is initially stored in a local memory of the database. The generic method then creates a dynamic storage area in the database for the data based on the number of data units that were detected, and based on the size of the detected data unit. In this manner, there is no need to pre-define the structure of the storage area before performing the query.
摘要翻译：在基于CORBA平台的分布式处理系统中处理动态数据库的方法包括：在服务器中调用通用方法，通过被叫通用方法检测数据，存储检测到的数据，并将检测到的数据返回给客户端，处理系统。检测到的数据最初存储在数据库的本地存储器中。然后，通用方法基于检测到的数据单元的数量，并且基于检测到的数据单元的大小，在数据库中为数据创建动态存储区域。以这种方式，在执行查询之前不需要预定义存储区域的结构。

6. 发明授权

US06554242B2 Grade control apparatus of display set for tapestry 失效
标题翻译：挂毯展示台等级控制装置
公开(公告)号：US06554242B2
公开(公告)日：2003-04-29
申请号：US10160157
申请日：2002-06-04
申请人： Sang Wook Kim
发明人： Sang Wook Kim
IPC分类号： E04G300
CPC分类号： F16M13/02 , F16M11/10 , F16M11/18 , Y10S248/923
摘要： A grade control apparatus of display set for tapestry. The apparatus includes at least two guide brackets attached to a wall; holding-down brackets for holding a display device, each having one end being pivotably connected to one end of the corresponding guide bracket; adjusting link transmission shafts installed within each guide bracket, each having one end on which a bevel gear is installed and the other end on which a shifting boss is installed; an angle adjustable shaft being installed between the guide brackets and having gears for being engaged with each bevel gear; and an angle adjustable hand lever for receiving an external force, the angle adjustable hand lever being formed on at least one angle adjustable shaft. The present invention easily adjusts the angle of the display device so as to comply with a user's wishes, and finely adjusts the angle of the display device by a small force.
摘要翻译：一种用于挂毯的显示器的档次控制装置。该装置包括至少两个连接到墙壁上的引导支架; 用于保持显示装置的按压支架，每个具有一端可枢转地连接到相应导向支架的一端; 调整安装在每个引导支架内的连杆传动轴，每个引导支架的一端安装有锥齿轮，另一端安装有换档凸台; 角度可调轴安装在引导支架之间并具有与每个锥齿轮啮合的齿轮; 以及用于接受外力的角度可调节手柄，所述角度可调手柄形成在至少一个角度可调轴上。本发明可以容易地调整显示装置的角度以符合用户的愿望，并且通过较小的力精细地调整显示装置的角度。

7. 发明授权

US6107138A Method for fabricating a semiconductor device having a tapered contact hole 失效
标题翻译：一种具有锥形接触孔的半导体器件的制造方法
公开(公告)号：US6107138A
公开(公告)日：2000-08-22
申请号：US744805
申请日：1996-11-06
申请人： Ei Sam Jeong , Sang Wook Kim , Byung Suk Lee , Yong Hyeock Yoon
发明人： Ei Sam Jeong , Sang Wook Kim , Byung Suk Lee , Yong Hyeock Yoon
IPC分类号： H01L21/302 , H01L21/02 , H01L21/28 , H01L21/3065 , H01L21/768 , H01L21/8242 , H01L23/522 , H01L27/108
CPC分类号： H01L27/10852 , H01L28/91
摘要： A semiconductor device includes: a field oxide layer formed on a semiconductor substrate; a transistor having an active region formed on a semiconductor substrate; an interlayer insulating layer formed on the transistor and the field oxide; and a tapered contact hole exposing the active region adjacent to the field oxide layer, wherein an upper portion of the tapered contact hole is wider than a lower portion thereof so that the field oxide is not etched during the contact hole etching process. A method for fabricating a semiconductor device includes the steps for: forming a field oxide layer on a semiconductor substrate; forming a transistor having an active region on a semiconductor substrate; forming an interlayer insulating layer on the resulting structure; and forming a tapered contact hole exposing the active region adjacent to the field oxide layer, wherein an upper portion of the tapered contact hole is wider than a lower portion thereof so that the field oxide is not etched during the contact hole etching process.
摘要翻译：半导体器件包括：形成在半导体衬底上的场氧化物层; 具有形成在半导体衬底上的有源区的晶体管; 形成在晶体管和场氧化物上的层间绝缘层; 以及使所述有源区域与所述场氧化物层相邻露出的锥形接触孔，其中所述锥形接触孔的上部比其下部宽，使得在所述接触孔蚀刻工艺期间不会蚀刻所述场氧化物。一种制造半导体器件的方法包括以下步骤：在半导体衬底上形成场氧化物层; 在半导体衬底上形成具有有源区的晶体管; 在所得结构上形成层间绝缘层; 以及形成露出与所述场氧化物层相邻的所述有源区的锥形接触孔，其中所述锥形接触孔的上部比其下部宽，使得在所述接触孔蚀刻处理期间不会蚀刻所述场氧化物。

8. 发明授权

US09165211B2 Image processing apparatus and method 有权
标题翻译：图像处理装置及方法
公开(公告)号：US09165211B2
公开(公告)日：2015-10-20
申请号：US13251782
申请日：2011-10-03
申请人： Seon Min Rhee , Yong Beom Lee , Sang Wook Kim
发明人： Seon Min Rhee , Yong Beom Lee , Sang Wook Kim
IPC分类号： G06K9/00 , G06K9/46
CPC分类号： G06K9/4671 , G06K9/00201
摘要： Provided is an image processing apparatus for extracting a three-dimensional (3D) feature point from a depth image. An input processing unit may receive a depth image and may receive, via a user interface, selection information of at least one region that is selected as a target region in the depth image. A geometry information analyzer of the image processing apparatus may analyze geometry information of the target region within the input depth image, and a feature point extractor may extract at least one feature point from the target region based on the geometry information of the target region.
摘要翻译：提供了一种用于从深度图像提取三维（3D）特征点的图像处理装置。输入处理单元可以接收深度图像，并且可以经由用户界面接收在深度图像中被选择为目标区域的至少一个区域的选择信息。图像处理装置的几何信息分析器可以分析输入深度图像内的目标区域的几何信息，并且特征点提取器可以基于目标区域的几何信息从目标区域提取至少一个特征点。

9. 发明授权

US08932947B1 Methods for forming a round bottom silicon trench recess for semiconductor applications 有权
标题翻译：用于形成用于半导体应用的圆底硅沟槽凹槽的方法
公开(公告)号：US08932947B1
公开(公告)日：2015-01-13
申请号：US13948269
申请日：2013-07-23
申请人： Joo Won Han , Kee Young Cho , Han Soo Cho , Sang Wook Kim , Anisul H. Khan
发明人： Joo Won Han , Kee Young Cho , Han Soo Cho , Sang Wook Kim , Anisul H. Khan
IPC分类号： H01L21/302 , H01L21/762 , H01L21/768 , H01L21/311 , H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32082 , H01J2237/3347 , H01L21/30655 , H01L21/31116 , H01L21/67109 , H01L21/6831 , H01L21/76224 , H01L21/76898 , H01L29/66621
摘要： Embodiments of the present invention provide methods to etching a recess channel in a semiconductor substrate, for example, a silicon containing material. In one embodiment, a method of forming a recess structure in a semiconductor substrate includes transferring a silicon substrate into a processing chamber having a patterned photoresist layer disposed thereon exposing a portion of the substrate, providing an etching gas mixture including a halogen containing gas and a Cl2 gas into the processing chamber, supplying a RF source power to form a plasma from the etching gas mixture, supplying a pulsed RF bias power in the etching gas mixture, and etching the portion of the silicon substrate exposed through the patterned photoresist layer in the presence of the plasma.
摘要翻译：本发明的实施例提供了蚀刻半导体衬底（例如含硅材料）中的凹槽通道的方法。在一个实施例中，在半导体衬底中形成凹陷结构的方法包括将硅衬底转移到其中设置有图案化光致抗蚀剂层的处理室中，暴露一部分衬底，提供包含含卤素气体和 Cl 2气体进入处理室，提供RF源功率以从蚀刻气体混合物形成等离子体，在蚀刻气体混合物中提供脉冲RF偏置功率，以及蚀刻通过图案化光致抗蚀剂层暴露的硅衬底的部分，存在等离子体。

10. 发明申请

US20110091001A1 HIGH CURRENT SOLID TARGET FOR RADIOISOTOPE PRODUCTION AT CYCLOTRON USING METAL FOAM 有权
标题翻译：使用金属泡沫的CYCLOTRON生产射电光电子的高电流固体靶
公开(公告)号：US20110091001A1
公开(公告)日：2011-04-21
申请号：US12821949
申请日：2010-06-23
申请人： Min Goo Hur , Seung Dae Yang , Sang Wook Kim , In Jong Kim , Sang Mu Choi
发明人： Min Goo Hur , Seung Dae Yang , Sang Wook Kim , In Jong Kim , Sang Mu Choi
IPC分类号： H05H6/00
CPC分类号： H05H6/00
摘要： Disclosed herein is a high current solid target for radioisotope production at a cyclotron using a metal foam, and more specifically, a high current solid target for isotope production, which attaches a metal foam to the rear surface of the solid target plate. A high current solid target for isotope production including a metal foam according to the present invention may exhibit excellent cooling performances to increase the amount of proton beam current irradiated on the solid target compared to conventional planar-type solid targets. Because the irradiation of the increased proton beam current may increase the amount of an isotope produced per unit time and even an irradiation of proton beam in a short time may allow for production of a desired amount of an isotope, the solid target may be usefully used for production of medical cyclotron nuclides.
摘要翻译：本文公开了用于使用金属泡沫的回旋加速器的放射性同位素生产的高电流固体靶，更具体地，用于同位素产生的高电流固体靶，其将金属泡沫附着到固体靶板的后表面。与现有的平面型固体靶相比，含有根据本发明的金属泡沫的高电流固体靶可以表现出优异的冷却性能，以增加照射在固体靶上的质子束电流的量。因为增加的质子束电流的照射可以增加每单位时间产生的同位素的量，甚至在短时间内甚至照射质子束可以允许产生所需量的同位素，所以可以有用地使用固体靶用于生产医用回旋加速器核素。

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