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1. 发明申请

US20100165716A1 NONVOLATILE MEMORY WITH OVONIC THRESHOLD SWITCHES 审中-公开
标题翻译：具有OVONIC THRESHOLD开关的非易失性存储器
公开(公告)号：US20100165716A1
公开(公告)日：2010-07-01
申请号：US12346700
申请日：2008-12-30
申请人： Derchang Kau , Greg Atwood , Gianpaolo Spadini
发明人： Derchang Kau , Greg Atwood , Gianpaolo Spadini
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C8/14 , G11C13/0004 , G11C13/0028 , G11C13/003 , G11C2213/76
摘要： A memory device including a plurality of memory cells being arranged in a matrix having a plurality of rows and a plurality of columns. Each memory cell includes a storage element and a selector for selecting the corresponding storage element during a reading operation or a programming operation. The memory device further including a plurality of row lines each one for selecting the memory cells of a corresponding row and a plurality of column lines each one for selecting the memory cells of a corresponding column. The memory device further includes for each line among the row lines and/or the column lines a respective set of local lines each one for selecting a group of memory cells of the corresponding line, and a respective set of selection elements each one for selecting a corresponding local line of the set in response to the selection of the respective line.
摘要翻译：一种存储器件，包括多个存储单元，其被布置在具有多行和多列的矩阵中。每个存储单元包括存储元件和选择器，用于在读取操作或编程操作期间选择相应的存储元件。所述存储装置还包括多个行线，每行用于选择相应行的存储单元和多个列线，每一行用于选择相应列的存储单元。存储装置还包括行行和/或列行中的每行，各自的一组本地线，每一行用于选择相应行的一组存储单元，以及各自的选择元素组，每一组用于选择响应于相应行的选择，该集合的对应本地行。

2. 发明申请

US20090194756A1 Self-aligned eletrode phase change memory 审中-公开
标题翻译：自对准电极相变存储器
公开(公告)号：US20090194756A1
公开(公告)日：2009-08-06
申请号：US12012231
申请日：2008-01-31
申请人： Derchang Kau , Greg Atwood
发明人： Derchang Kau , Greg Atwood
IPC分类号： H01L47/00 , G11C11/56
CPC分类号： H01L45/126 , H01L27/2427 , H01L27/2463 , H01L45/06 , H01L45/124 , H01L45/1691
摘要： A phase change memory may be formed with an upper electrode self-aligned to a phase change memory element. In some embodiments, patterning techniques may be used to form the elements of the memory. The memory element may be formed as a sidewall spacer formed on both opposed sides of an elongate strip of material. The resulting elongate strip of phase change memory element material may then be singulated in the same etching step that forms the upper electrodes extending in the column direction. Thus, the memory elements may be singulated in the row direction, while, at the same time, the top electrodes are defined to extend continuously in the column direction.
摘要翻译：相变存储器可以形成为与相变存储元件自对准的上电极。在一些实施例中，可以使用图案化技术来形成存储器的元件。存储元件可以形成为在细长材料条的两个相对侧上形成的侧壁间隔物。然后可以在形成沿列方向延伸的上电极的相同蚀刻步骤中将所得到的相变存储元件材料的细长带分割。因此，存储元件可以在行方向上被划分，同时，顶电极被限定为在列方向上连续延伸。

3. 发明申请

US20080029752A1 PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF 有权
标题翻译：相变记忆及其制造方法
公开(公告)号：US20080029752A1
公开(公告)日：2008-02-07
申请号：US11771601
申请日：2007-06-29
申请人： Ilya Karpov , Charles Kuo , Yudong Kim , Greg Atwood
发明人： Ilya Karpov , Charles Kuo , Yudong Kim , Greg Atwood
IPC分类号： H01L21/06 , H01L29/00
CPC分类号： H01L45/04 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/144 , H01L45/1683
摘要： Both a chalcogenide select device (24, 120) and a chalcogenide memory element (40, 130) are formed within vias within dielectrics (18, 22). As a result, the chalcogenides is effectively trapped within the vias and no glue or adhesion layer is needed. Moreover, delamination problems are avoided. A lance material (30) is formed within the same via (31) with the memory element (40, 130). In one embodiment, the lance material is made thinner by virtue of the presence of a sidewall spacer (28); in another embodiment no sidewall spacer is utilized. A relatively small area of contact between the chalcogenide (40) used to form a memory element (130) and the lance material (30) is achieved by providing a pin hole opening in a dielectric (34), which separates the chalcogenide and the lance material.
摘要翻译：在电介质（18,22）内的通孔内形成硫族化物选择装置（24,120）和硫族化物存储元件（40,130）。结果，硫属化物被有效地捕获在通孔内，并且不需要胶或粘合层。此外，避免了分层问题。在与存储元件（40,130）相同的通孔（31）内形成喷枪材料（30）。在一个实施例中，由于存在侧壁间隔件（28），喷枪材料制成更薄。在另一个实施例中，没有使用侧壁间隔物。用于形成存储元件（130）的硫族化物（40）与喷枪材料（30）之间的相对小的接触面积是通过在电介质（34）中设置一个针孔开口来实现的，该电介质（34）将硫族化物和喷枪材料。

4. 发明授权

US07259023B2 Forming phase change memory arrays 有权
标题翻译：形成相变存储器阵列
公开(公告)号：US07259023B2
公开(公告)日：2007-08-21
申请号：US10939145
申请日：2004-09-10
申请人： Charles C. Kuo , Ilya Karpov , Yudong Kim , Greg Atwood
发明人： Charles C. Kuo , Ilya Karpov , Yudong Kim , Greg Atwood
IPC分类号： H01L21/00
CPC分类号： H01L45/06 , H01L27/2427 , H01L27/2463 , H01L45/1233 , H01L45/144 , H01L45/1675 , H01L45/1691 , Y10S438/947
摘要： A phase change memory may be formed to have a dimension that is sub-lithographic in one embodiment by forming a surface feature over the phase change material, and coating the surface feature with a mask of sub-lithographic dimensions. The horizontal portions of the mask and the surface feature may then be removed and the remaining portions of the mask may be used to define a dimension of said phase change material. Another dimension of the phase change material may be defined using an upper electrode extending over said phase change material as a mask to etch the phase change material.
摘要翻译：在一个实施例中，相变存储器可以形成为具有亚光刻的尺寸，通过在相变材料上形成表面特征，并用亚光刻尺寸的掩模涂覆表面特征。然后可以去除掩模的水平部分和表面特征，并且掩模的其余部分可以用于限定所述相变材料的尺寸。可以使用在所述相变材料上延伸的上电极作为掩模来限定相变材料的另一尺寸以蚀刻相变材料。

5. 发明申请

US20070105267A1 Phase change memory with threshold switch select device 有权
标题翻译：具有阈值开关选择装置的相变存储器
公开(公告)号：US20070105267A1
公开(公告)日：2007-05-10
申请号：US11272208
申请日：2005-11-10
申请人： Ilya Karpov , Sean Lee , Yudong Kim , Greg Atwood
发明人： Ilya Karpov , Sean Lee , Yudong Kim , Greg Atwood
IPC分类号： H01L21/00
CPC分类号： H01L45/141 , G11C13/0004 , H01L27/2427 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1683
摘要： An ovonic threshold switch may be formed of a continuous chalcogenide layer. That layer spans multiple cells, forming a phase change memory. In other words, the ovonic threshold switch may be formed of a chalcogenide layer which extends, uninterrupted, over numerous cells of a phase change memory.
摘要翻译：可以由连续的硫族化物层形成一个超声阈值开关。该层跨越多个单元，形成相变存储器。换句话说，超声阈值开关可以由在相变存储器的多个单元上不间断地延伸的硫族化物层形成。

6. 发明申请

US20120100688A1 Self-Aligned Electrode Phase Change Memory 审中-公开
标题翻译：自对准电极相变存储器
公开(公告)号：US20120100688A1
公开(公告)日：2012-04-26
申请号：US13343936
申请日：2012-01-05
申请人： DerChang Kau , Greg Atwood
发明人： DerChang Kau , Greg Atwood
IPC分类号： H01L21/8239
CPC分类号： H01L45/126 , H01L27/2427 , H01L27/2463 , H01L45/06 , H01L45/124 , H01L45/1691
摘要： A phase change memory may be formed with an upper electrode self-aligned to a phase change memory element. In some embodiments, patterning techniques may be used to form the elements of the memory. The memory element may be formed as a sidewall spacer formed on both opposed sides of an elongate strip of material. The resulting elongate strip of phase change memory element material may then be singulated in the same etching step that forms the upper electrodes extending in the column direction. Thus, the memory elements may be singulated in the row direction, while, at the same time, the top electrodes are defined to extend continuously in the column direction.
摘要翻译：相变存储器可以形成为与相变存储元件自对准的上电极。在一些实施例中，可以使用图案化技术来形成存储器的元件。存储元件可以形成为在细长材料条的两个相对侧上形成的侧壁间隔物。然后可以在形成沿列方向延伸的上电极的相同蚀刻步骤中将所得到的相变存储元件材料的细长带分割。因此，存储元件可以在行方向上被划分，同时，顶电极被限定为在列方向上连续延伸。

7. 发明申请

US20050090042A1 Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme 有权
公开(公告)号：US20050090042A1
公开(公告)日：2005-04-28
申请号：US10996163
申请日：2004-11-23
申请人： Johanna Swan , Bala Natarajan , Chien Chiang , Greg Atwood , Valluri Rao
发明人： Johanna Swan , Bala Natarajan , Chien Chiang , Greg Atwood , Valluri Rao
IPC分类号： H01L21/768 , H01L23/48 , H01L25/065 , H01L21/44
CPC分类号： H01L25/0657 , H01L21/76898 , H01L23/481 , H01L25/50 , H01L2224/16 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06589 , Y10T29/49155 , Y10T29/49165
摘要： An electronic assembly is assembled by stacking two or more integrated circuit dies on top of one another. Prior to singulation, an opening is laser-drilled into an upper die, and subsequently filled with a conductive member. The conductive member is located on a lower die and interconnects integrated circuits of the upper and lower dies. Laser-drilling allows for faster throughput when compared to, for example, etching, especially if a small number of openings has to be formed. The opening is laser-drilled from an upper surface of the upper die all the way through the die, which allows for the use of alignment marks on an upper surface of the upper die.

8. 发明授权

US07709822B2 Phase change memory and manufacturing method thereof 有权
标题翻译：相变记忆及其制造方法
公开(公告)号：US07709822B2
公开(公告)日：2010-05-04
申请号：US11771601
申请日：2007-06-29
申请人： Ilya V. Karpov , Charles C. Kuo , Yudong Kim , Greg Atwood
发明人： Ilya V. Karpov , Charles C. Kuo , Yudong Kim , Greg Atwood
IPC分类号： H01L47/00
CPC分类号： H01L45/04 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/144 , H01L45/1683
摘要： Both a chalcogenide select device and a chalcogenide memory element are formed within vias within dielectrics. As a result, the chalcogenides is effectively trapped within the vias and no glue or adhesion layer is needed. Moreover, delamination problems are avoided. A lance material is formed within the same via with the memory element. In one embodiment, the lance material is made thinner by virtue of the presence of a sidewall spacer; in another embodiment no sidewall spacer is utilized. A relatively small area of contact between the chalcogenide used to form a memory element and the lance material is achieved by providing a pin hole opening in a dielectric, which separates the chalcogenide and the lance material.
摘要翻译：在电介质内的通孔内形成硫族化物选择装置和硫族化物存储元件。结果，硫属化物被有效地捕获在通孔内，并且不需要胶或粘合层。此外，避免了分层问题。在与存储元件相同的通孔内形成喷枪材料。在一个实施例中，由于侧壁间隔物的存在，喷枪材料被制成更薄; 在另一个实施例中，没有使用侧壁间隔物。用于形成记忆元件的硫族化物与喷枪材料之间的相对较小的接触面积通过在电解质中设置一个销孔开口来实现，该绝缘体分离硫族化物和喷枪材料。

9. 发明申请

US20060246712A1 Dual resistance heater for phase change devices and manufacturing method thereof 有权
公开(公告)号：US20060246712A1
公开(公告)日：2006-11-02
申请号：US11312231
申请日：2005-12-19
申请人： Yudong Kim , Ilya Karpov , Charles Kuo , Greg Atwood , Maria Marangon , Tyler Lowrey
发明人： Yudong Kim , Ilya Karpov , Charles Kuo , Greg Atwood , Maria Marangon , Tyler Lowrey
IPC分类号： H01L21/4763
CPC分类号： H01L45/16 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1286 , H01L45/141 , H01L45/1683
摘要： A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.

10. 发明申请

US20060054991A1 Forming phase change memory arrays 有权
标题翻译：形成相变存储器阵列
公开(公告)号：US20060054991A1
公开(公告)日：2006-03-16
申请号：US10939145
申请日：2004-09-10
申请人： Charles Kuo , Ilya Karpov , Yudong Kim , Greg Atwood
发明人： Charles Kuo , Ilya Karpov , Yudong Kim , Greg Atwood
IPC分类号： H01L29/00
CPC分类号： H01L45/06 , H01L27/2427 , H01L27/2463 , H01L45/1233 , H01L45/144 , H01L45/1675 , H01L45/1691 , Y10S438/947
摘要： A phase change memory may be formed to have a dimension that is sub-lithographic in one embodiment by forming a surface feature over the phase change material, and coating the surface feature with a mask of sub-lithographic dimensions. The horizontal portions of the mask and the surface feature may then be removed and the remaining portions of the mask may be used to define a dimension of said phase change material. Another dimension of the phase change material may be defined using an upper electrode extending over said phase change material as a mask to etch the phase change material.
摘要翻译：在一个实施例中，相变存储器可以形成为具有亚光刻的尺寸，通过在相变材料上形成表面特征，并用亚光刻尺寸的掩模涂覆表面特征。然后可以去除掩模的水平部分和表面特征，并且掩模的其余部分可以用于限定所述相变材料的尺寸。可以使用在所述相变材料上延伸的上电极作为掩模来限定相变材料的另一尺寸以蚀刻相变材料。

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