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1. 发明申请

US20070259479A1 Forming phase change memory arrays 审中-公开
公开(公告)号：US20070259479A1
公开(公告)日：2007-11-08
申请号：US11827223
申请日：2007-07-11
申请人： Charles Kuo , Ilya Karpov , Yudong Kim , Greg Atwood
发明人： Charles Kuo , Ilya Karpov , Yudong Kim , Greg Atwood
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , H01L27/2427 , H01L27/2463 , H01L45/1233 , H01L45/144 , H01L45/1675 , H01L45/1691 , Y10S438/947
摘要： A phase change memory may be formed to have a dimension that is sub-lithographic in one embodiment by forming a surface feature over the phase change material, and coating the surface feature with a mask of sub-lithographic dimensions. The horizontal portions of the mask and the surface feature may then be removed and the remaining portions of the mask may be used to define a dimension of said phase change material. Another dimension of the phase change material may be defined using an upper electrode extending over said phase change material as a mask to etch the phase change material.

2. 发明申请

US20080029752A1 PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF 有权
标题翻译：相变记忆及其制造方法
公开(公告)号：US20080029752A1
公开(公告)日：2008-02-07
申请号：US11771601
申请日：2007-06-29
申请人： Ilya Karpov , Charles Kuo , Yudong Kim , Greg Atwood
发明人： Ilya Karpov , Charles Kuo , Yudong Kim , Greg Atwood
IPC分类号： H01L21/06 , H01L29/00
CPC分类号： H01L45/04 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/144 , H01L45/1683
摘要： Both a chalcogenide select device (24, 120) and a chalcogenide memory element (40, 130) are formed within vias within dielectrics (18, 22). As a result, the chalcogenides is effectively trapped within the vias and no glue or adhesion layer is needed. Moreover, delamination problems are avoided. A lance material (30) is formed within the same via (31) with the memory element (40, 130). In one embodiment, the lance material is made thinner by virtue of the presence of a sidewall spacer (28); in another embodiment no sidewall spacer is utilized. A relatively small area of contact between the chalcogenide (40) used to form a memory element (130) and the lance material (30) is achieved by providing a pin hole opening in a dielectric (34), which separates the chalcogenide and the lance material.
摘要翻译：在电介质（18,22）内的通孔内形成硫族化物选择装置（24,120）和硫族化物存储元件（40,130）。结果，硫属化物被有效地捕获在通孔内，并且不需要胶或粘合层。此外，避免了分层问题。在与存储元件（40,130）相同的通孔（31）内形成喷枪材料（30）。在一个实施例中，由于存在侧壁间隔件（28），喷枪材料制成更薄。在另一个实施例中，没有使用侧壁间隔物。用于形成存储元件（130）的硫族化物（40）与喷枪材料（30）之间的相对小的接触面积是通过在电介质（34）中设置一个针孔开口来实现的，该电介质（34）将硫族化物和喷枪材料。

3. 发明申请

US20060246712A1 Dual resistance heater for phase change devices and manufacturing method thereof 有权
公开(公告)号：US20060246712A1
公开(公告)日：2006-11-02
申请号：US11312231
申请日：2005-12-19
申请人： Yudong Kim , Ilya Karpov , Charles Kuo , Greg Atwood , Maria Marangon , Tyler Lowrey
发明人： Yudong Kim , Ilya Karpov , Charles Kuo , Greg Atwood , Maria Marangon , Tyler Lowrey
IPC分类号： H01L21/4763
CPC分类号： H01L45/16 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1286 , H01L45/141 , H01L45/1683
摘要： A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.

4. 发明申请

US20060054991A1 Forming phase change memory arrays 有权
标题翻译：形成相变存储器阵列
公开(公告)号：US20060054991A1
公开(公告)日：2006-03-16
申请号：US10939145
申请日：2004-09-10
申请人： Charles Kuo , Ilya Karpov , Yudong Kim , Greg Atwood
发明人： Charles Kuo , Ilya Karpov , Yudong Kim , Greg Atwood
IPC分类号： H01L29/00
CPC分类号： H01L45/06 , H01L27/2427 , H01L27/2463 , H01L45/1233 , H01L45/144 , H01L45/1675 , H01L45/1691 , Y10S438/947
摘要： A phase change memory may be formed to have a dimension that is sub-lithographic in one embodiment by forming a surface feature over the phase change material, and coating the surface feature with a mask of sub-lithographic dimensions. The horizontal portions of the mask and the surface feature may then be removed and the remaining portions of the mask may be used to define a dimension of said phase change material. Another dimension of the phase change material may be defined using an upper electrode extending over said phase change material as a mask to etch the phase change material.
摘要翻译：在一个实施例中，相变存储器可以形成为具有亚光刻的尺寸，通过在相变材料上形成表面特征，并用亚光刻尺寸的掩模涂覆表面特征。然后可以去除掩模的水平部分和表面特征，并且掩模的其余部分可以用于限定所述相变材料的尺寸。可以使用在所述相变材料上延伸的上电极作为掩模来限定相变材料的另一尺寸以蚀刻相变材料。

5. 发明申请

US20060073631A1 Phase change memory with damascene memory element 有权
公开(公告)号：US20060073631A1
公开(公告)日：2006-04-06
申请号：US10949090
申请日：2004-09-24
申请人： Ilya Karpov , Charles Kuo , Yudong Kim , Fabio Pellizzer
发明人： Ilya Karpov , Charles Kuo , Yudong Kim , Fabio Pellizzer
IPC分类号： H01L21/06
CPC分类号： H01L45/1683 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/16
摘要： A phase change material may be formed within a trench in a first layer to form a damascene memory element and in an overlying layer to form a threshold device. Below the first layer may be a wall heater. The wall heater that heats the overlying phase change material may be formed in a U-shape in some embodiments of the present invention. The phase change material for the memory element may be elongated in one direction to provide greater alignment tolerances with said heater and said threshold device.

6. 发明申请

US20070026566A1 Phase change memory with damascene memory element 有权
标题翻译：相变记忆与大马士革记忆元素
公开(公告)号：US20070026566A1
公开(公告)日：2007-02-01
申请号：US11542712
申请日：2006-10-04
申请人： Ilya Karpov , Charles Kuo , Yudong Kim , Fabio Pellizzer
发明人： Ilya Karpov , Charles Kuo , Yudong Kim , Fabio Pellizzer
IPC分类号： H01L21/06
CPC分类号： H01L45/1683 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/16
摘要： A phase change material may be formed within a trench in a first layer to form a damascene memory element and in an overlying layer to form a threshold device. Below the first layer may be a wall heater. The wall heater that heats the overlying phase change material may be formed in a U-shape in some embodiments of the present invention. The phase change material for the memory element may be elongated in one direction to provide greater alignment tolerances with said heater and said threshold device.
摘要翻译：相变材料可以形成在第一层中的沟槽内，以形成镶嵌存储元件，并在上层中形成阈值器件。第一层以下可以是壁式加热器。在本发明的一些实施例中，加热上覆相变材料的壁加热器可以形成为U形。用于存储元件的相变材料可以在一个方向上伸长，以与所述加热器和所述阈值装置提供更大的对准公差。

7. 发明申请

US20140291663A1 HIGH STABILITY SPINTRONIC MEMORY 有权
标题翻译：高稳定性SPINTRONIC记忆
公开(公告)号：US20140291663A1
公开(公告)日：2014-10-02
申请号：US13996603
申请日：2013-03-28
申请人： Charles Kuo , Kaan Oguz , Brian Doyle , Elijah Ilya Karpov , Roksana Golizadeh Mojarad , David Kencke , Robert Chau
发明人： Charles Kuo , Kaan Oguz , Brian Doyle , Elijah Ilya Karpov , Roksana Golizadeh Mojarad , David Kencke , Robert Chau
IPC分类号： H01L43/10 , H01L43/12
CPC分类号： H01L43/10 , G11C11/161 , H01F10/3286 , H01F10/329 , H01L43/065 , H01L43/08 , H01L43/12 , H01L43/14
摘要： An embodiment includes a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers; the tunnel barrier directly contacting a first side of the free layer; and an oxide layer directly contacting a second side of the free layer; wherein the tunnel barrier includes an oxide and has a first resistance-area (RA) product and the oxide layer has a second RA product that is lower than the first RA product. The MTJ may be included in a perpendicular spin torque transfer memory. The tunnel barrier and oxide layer form a memory having high stability with an RA product not substantively higher than a less table memory having a MTJ with only a single oxide layer. Other embodiments are described herein.
摘要翻译：实施例包括在自由层和固定层之间包括自由磁性层，固定磁性层和隧道势垒的磁性隧道结（MTJ）; 所述隧道势垒直接接触所述自由层的第一侧; 和直接接触自由层的第二面的氧化物层; 其中所述隧道势垒包括氧化物并且具有第一电阻区域（RA）产物，并且所述氧化物层具有低于所述第一RA产物的第二RA产物。 MTJ可以包括在垂直旋转扭矩传递存储器中。隧道势垒和氧化物层形成具有高稳定性的存储器，RA产物实质上高于具有仅具有单一氧化物层的MTJ的较少表存储器。本文描述了其它实施例。

8. 发明申请

US20060257787A1 Multi-level phase change memory 有权
标题翻译：多级相变存储器
公开(公告)号：US20060257787A1
公开(公告)日：2006-11-16
申请号：US11127482
申请日：2005-05-12
申请人： Charles Kuo , Ilya Karpov
发明人： Charles Kuo , Ilya Karpov
IPC分类号： G11B7/24
CPC分类号： G11C11/5678 , G11C13/0004 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/1683 , Y10S438/90
摘要： A phase change memory may be formed which is amenable to multilevel programming. The phase change material may be formed with a lateral extent which does not exceed the lateral extent of an underlying heater. As a result, the possibility of current bypassing the amorphous phase change material in the reset state is reduced, reducing the programming current that is necessary to prevent this situation. In addition, a more controllable multilevel phase change memory may be formed in some embodiments.
摘要翻译：可以形成适于多级编程的相变存储器。相变材料可以形成有不超过下面的加热器的横向范围的横向范围。结果，减少了在复位状态下绕过非晶相变材料的电流的可能性，从而减少了防止这种情况所必需的编程电流。此外，在一些实施例中可以形成更可控的多电平相变存储器。

9. 发明申请

US20070247899A1 Programming a normally single phase chalcogenide material for use as a memory or FPLA 有权
标题翻译：编程正常的单相硫属化物材料，用作记忆体或FPLA
公开(公告)号：US20070247899A1
公开(公告)日：2007-10-25
申请号：US11407573
申请日：2006-04-20
申请人： George Gordon , Ward Parkinson , John Peters , Tyler Lowrey , Stanford Ovshinsky , Guy Wicker , Ilya Karpov , Charles Kuo
发明人： George Gordon , Ward Parkinson , John Peters , Tyler Lowrey , Stanford Ovshinsky , Guy Wicker , Ilya Karpov , Charles Kuo
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/009 , G11C2013/0092 , G11C2213/77 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.
摘要翻译：可以用稳定的硫属化物玻璃来实现记忆，硫化物玻璃被定义为当暴露于200℃下30分钟或更短时不改变为通常结晶相的通常为非晶态的硫族化物材料。可以通过改变材料的阈值电压来编程不同的状态。可以用不同幅度和/或不同脉冲下降时间的脉冲来改变阈值电压。可以使用两种不同状态的阈值电压之间的参考电平进行读取。通常不需要单独的访问设备。

10. 发明申请

US20070018148A1 Phase change memory with U-shaped chalcogenide cell 有权
标题翻译： U型硫族化物电池的相变记忆
公开(公告)号：US20070018148A1
公开(公告)日：2007-01-25
申请号：US11185488
申请日：2005-07-20
申请人： Charles Kuo , Ilya Karpov
发明人： Charles Kuo , Ilya Karpov
IPC分类号： H01L29/02
CPC分类号： H01L45/124 , H01L27/2427 , H01L45/06 , H01L45/141 , H01L45/1691
摘要： A phase change memory may be made of a chalcogenide material having a U-shape. The U-shaped chalcogenide may transition between amorphous and crystalline phases in an upper part of a vertical portion thereof. As a result, in some embodiments, self-heating may be achieved without the need for a heater, and without the need for glue in some cases.
摘要翻译：相变存储器可以由具有U形的硫族化物材料制成。 U型硫族化物可以在其垂直部分的上部中在非晶相和结晶相之间转变。结果，在一些实施例中，可以实现自加热而不需要加热器，并且在一些情况下不需要胶水。

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