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    • 3. 发明授权
    • Process and arrangement for heat treatment of two-dimensional objects
    • 二维物体热处理工艺及布置
    • US06291799B1
    • 2001-09-18
    • US09493123
    • 2000-01-28
    • Fritz HeyerPeter Roth
    • Fritz HeyerPeter Roth
    • F27B906
    • H01L21/67115H01L31/1804H01L31/1876Y02E10/547Y02P70/521
    • The invention relates to a process for heat treatment of two-dimensional objects such as semiconductor wafers, for example in the form of silicon wafers, where the objects are arranged on supports and are conveyed through a heating unit, in particular continuously. To achieve a targeted treatment of a two-dimensional object, in particular of a semiconductor component such as a silicon wafer, on one side only, while at the same time achieving a high throughput with incorporation as necessary into a continuous overall manufacturing process, it is proposed that the objects be arranged in full surface contact with the supports, which cover the objects completely or almost completely on their underside and which in turn comprise quartz glass in particular.
    • 本发明涉及一种用于热处理二维物体的方法,例如半导体晶片,例如以硅晶片的形式,其中物体被布置在支撑件上,并且特别是连续地被输送通过加热单元。 为了仅在一侧实现二维物体,特别是半导体元件如硅晶片的目标处理,同时在连续的整个制造过程中根据需要实现高吞吐量,同时并入其中 建议物体与支撑体完全表面接触地布置,其在其下侧完全或几乎完全覆盖物体,并且特别地还包括石英玻璃。