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1. 发明授权

US08610257B2 Semiconductor device and method for producing such a device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08610257B2
公开(公告)日：2013-12-17
申请号：US13269918
申请日：2011-10-10
申请人： Friedrich Kroener , Francisco Javier Santos Rodriguez , Carsten von Koblinski
发明人： Friedrich Kroener , Francisco Javier Santos Rodriguez , Carsten von Koblinski
IPC分类号： H01L23/06 , H01L23/04 , H01L29/40 , H01L23/52 , H01L23/48 , H01L23/12 , H01L23/13 , H01L23/14 , H01L23/15
CPC分类号： H01L24/94 , H01L21/76898 , H01L24/83 , H01L2221/68363 , H01L2224/83192 , H01L2224/838 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/12036 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/00
摘要： A semiconductor device and method for producing such a device is disclosed. One embodiment provides a semiconductor functional wafer having a first and second main surface. Component production processes are performed for producing a component functional region at the first main surface, wherein the component production processes produce an end state that is stable up to at least a first temperature. A carrier substrate is fitted to the first main surface. Access openings are produced to the first main surface. At least one further component production process is performed for producing patterned component functional regions at the first main surface of the functional wafer in the access openings. The end state produced in this process is stable up to a second temperature, which is less than the first temperature.
摘要翻译：公开了一种用于制造这种器件的半导体器件和方法。一个实施例提供了具有第一和第二主表面的半导体功能晶片。在第一主表面上进行用于制造组分功能区的组分制备方法，其中组分生产过程产生在至少第一温度下是稳定的结束状态。载体基板装配到第一主表面。产生到第一主表面的进入开口。进行至少一个进一步的部件生产过程，用于在进入开口中的功能晶片的第一主表面处产生图案化部件功能区域。在该过程中产生的最终状态是稳定的，直到第二温度小于第一温度。

2. 发明申请

US20090008769A1 SEMICONDUCTOR MODULE 有权
标题翻译：半导体模块
公开(公告)号：US20090008769A1
公开(公告)日：2009-01-08
申请号：US11828843
申请日：2007-07-26
申请人： Friedrich Kroener
发明人： Friedrich Kroener
IPC分类号： H01L23/48 , H01L21/60
CPC分类号： H01L23/49861 , H01L23/13 , H01L23/145 , H01L23/15 , H01L23/3672 , H01L23/5389 , H01L24/24 , H01L24/82 , H01L25/072 , H01L25/115 , H01L2224/12105 , H01L2224/24051 , H01L2224/24227 , H01L2224/24247 , H01L2224/32245 , H01L2224/73267 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/12032 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/00
摘要： A semiconductor module is disclosed. One embodiment provides a first electrically conductive carrier composed of a first material, a second electrically conductive carrier composed of the first material, an electrically insulating element composed of a second material, which connects the first carrier and the second carrier to one another, a first semiconductor substrate applied to the first carrier, a second semiconductor substrate applied to the second carrier, and an electrically conductive layer applied above the first carrier, the second carrier and the insulating element. The electrically conductive layer electrically conductively connects the first semiconductor substrate to the second semiconductor substrate.
摘要翻译：公开了一种半导体模块。一个实施例提供了由第一材料构成的第一导电载体，由第一材料构成的第二导电载体，由第二材料构成的电绝缘元件，第二材料将第一载体和第二载体彼此连接，施加到第一载体的半导体衬底，施加到第二载体的第二半导体衬底，以及施加在第一载体，第二载体和绝缘元件上的导电层。导电层将第一半导体衬底导电连接到第二半导体衬底。

3. 发明授权

US09017539B2 Method for fabricating a heat sink, and a heat sink 有权
标题翻译：制造散热器的方法和散热器
公开(公告)号：US09017539B2
公开(公告)日：2015-04-28
申请号：US13591239
申请日：2012-08-22
申请人： Friedrich Kroener
发明人： Friedrich Kroener
IPC分类号： C25D5/02 , C25D5/48 , C25D5/50 , C25D5/54 , B82Y30/00 , C25D5/10 , C25D5/14 , C25D7/12 , H01L23/373 , C25D5/18 , D06M101/40
CPC分类号： C25D5/022 , B82Y30/00 , C25D5/10 , C25D5/14 , C25D5/18 , C25D5/50 , C25D5/54 , C25D7/12 , D06M10/06 , D06M11/83 , D06M2101/40 , F28F3/02 , F28F21/00 , F28F21/02 , F28F21/085 , H01L21/4871 , H01L23/373 , H01L23/3733 , H01L24/83 , H01L2224/83801 , H01L2224/8384 , H01L2924/00 , H01L2924/0002 , H01L2924/01006 , H01L2924/01028 , H01L2924/01029 , H01L2924/13055
摘要： A method for fabricating a heat sink may include: providing a carbon fiber fabric having carbon fibers and openings, the openings leading from a first side to a second side of the fabric; and electroplating the fabric with metal, wherein metal is deposited with a higher rate at the first side than at the second side of the fabric. Another method for fabricating a heat sink may include: providing a carbon metal composite having metal-coated carbon fibers and openings, the openings leading from a first side to a second side of the carbon metal composite; disposing the composite over a semiconductor element such that the first side of the composite faces the semiconductor element; and bonding the composite to the semiconductor element by means of an electroplating process, wherein metal electrolyte is supplied to an interface between the carbon metal composite and the semiconductor element via the openings.
摘要翻译：一种用于制造散热器的方法可以包括：提供具有碳纤维和开口的碳纤维织物，所述开口从所述织物的第一侧向第二侧延伸; 并用金属电镀织物，其中金属在第一侧以比织物第二面高的速率沉积。用于制造散热器的另一种方法可以包括：提供具有金属涂覆的碳纤维和开口的碳金属复合材料，所述碳开口从所述碳金属复合材料的第一面到第二面; 将所述复合材料布置在半导体元件上，使得所述复合材料的第一面面对所述半导体元件; 以及通过电镀工艺将所述复合材料结合到所述半导体元件，其中通过所述开口将金属电解质供应到所述碳金属复合材料和所述半导体元件之间的界面。

4. 发明申请

US20120126926A1 Transformer Device and Method for Manufacturing a Transformer Device 有权
标题翻译：变压器装置及制造变压器装置的方法
公开(公告)号：US20120126926A1
公开(公告)日：2012-05-24
申请号：US12949974
申请日：2010-11-19
申请人： Friedrich Kroener , Carsten von Koblinski
发明人： Friedrich Kroener , Carsten von Koblinski
IPC分类号： H01F27/28 , H01F41/00
CPC分类号： H01F41/04 , H01F27/2804 , H01F41/041 , H01F2027/2819 , H01L2924/0002 , Y10T29/4902 , H01L2924/00
摘要： A transformer device includes a glass substrate having a first side and a second side arranged opposite the first side. A first recess is formed at the first side of the glass substrate. A second recess is formed at the second side of the glass substrate. The first and second recesses are arranged opposite to each other. A first coil is arranged in the first recess and a second coil is arranged in the second recess.
摘要翻译：变压器装置包括具有与第一侧相对布置的第一侧和第二侧的玻璃基板。在玻璃基板的第一侧形成有第一凹部。第二凹部形成在玻璃基板的第二侧。第一和第二凹部彼此相对布置。第一线圈布置在第一凹部中，第二线圈布置在第二凹部中。

5. 发明申请

US20120032295A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SUCH A DEVICE 有权
标题翻译：用于生产这样的器件的半导体器件和方法
公开(公告)号：US20120032295A1
公开(公告)日：2012-02-09
申请号：US13269918
申请日：2011-10-10
申请人： Friedrich Kroener , Francisco Javier Santos Rodriguez , Carsten von Koblinski
发明人： Friedrich Kroener , Francisco Javier Santos Rodriguez , Carsten von Koblinski
IPC分类号： H01L27/12
CPC分类号： H01L24/94 , H01L21/76898 , H01L24/83 , H01L2221/68363 , H01L2224/83192 , H01L2224/838 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/12036 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/00
摘要： A semiconductor device and method for producing such a device is disclosed. One embodiment provides a semiconductor functional wafer having a first and second main surface. Component production processes are performed for producing a component functional region at the first main surface, wherein the component production processes produce an end state that is stable up to at least a first temperature. A carrier substrate is fitted to the first main surface. Access openings are produced to the first main surface. At least one further component production process is performed for producing patterned component functional regions at the first main surface of the functional wafer in the access openings. The end state produced in this process is stable up to a second temperature, which is less than the first temperature.
摘要翻译：公开了一种用于制造这种器件的半导体器件和方法。一个实施例提供了具有第一和第二主表面的半导体功能晶片。在第一主表面上进行用于制造组分功能区的组分制备方法，其中组分生产过程产生在至少第一温度下是稳定的结束状态。载体基板装配到第一主表面。产生到第一主表面的进入开口。进行至少一个进一步的部件生产过程，用于在进入开口中的功能晶片的第一主表面处产生图案化部件功能区域。在该过程中产生的最终状态是稳定的，直到第二温度小于第一温度。

6. 发明授权

US08922016B2 Method for producing a composite material, associated composite material and associated semiconductor circuit arrangements 有权
标题翻译：生产复合材料，相关复合材料和相关半导体电路布置的方法
公开(公告)号：US08922016B2
公开(公告)日：2014-12-30
申请号：US13218222
申请日：2011-08-25
申请人： Oliver Hellmund , Daniel Kraft , Friedrich Kroener , Francisco Javier Santos Rodriguez , Carsten Von Koblinski
发明人： Oliver Hellmund , Daniel Kraft , Friedrich Kroener , Francisco Javier Santos Rodriguez , Carsten Von Koblinski
IPC分类号： H01L23/48 , H01L29/49 , H01L29/739
CPC分类号： H01L29/7397 , H01L29/4966 , H01L2924/0002 , Y10T428/249967 , Y10T428/24997 , H01L2924/00
摘要： A method for producing a composite material, associated composite material and associated semiconductor circuit arrangements is disclosed. A plurality of first electrically conducting material particles are applied to a carrier substrate and a second electrically conducting material is galvanically deposited on a surface of the first material particles in such a way that the second material mechanically and electrically bonds the plurality of first material particles to one another.
摘要翻译：公开了一种生产复合材料，相关复合材料和相关半导体电路装置的方法。将多个第一导电材料颗粒施加到载体基板上，并且将第二导电材料电沉积在第一材料颗粒的表面上，使得第二材料将多个第一材料颗粒机械地和电连接到另一个。

7. 发明申请

US20140054020A1 METHOD FOR FABRICATING A HEAT SINK, AND A HEAT SINK 有权
标题翻译：一种散热方法，一种散热方式
公开(公告)号：US20140054020A1
公开(公告)日：2014-02-27
申请号：US13591239
申请日：2012-08-22
申请人： Friedrich Kroener
发明人： Friedrich Kroener
IPC分类号： F28F21/02 , H01L21/60 , F28F21/08 , C25D5/54 , C25D7/12
CPC分类号： C25D5/022 , B82Y30/00 , C25D5/10 , C25D5/14 , C25D5/18 , C25D5/50 , C25D5/54 , C25D7/12 , D06M10/06 , D06M11/83 , D06M2101/40 , F28F3/02 , F28F21/00 , F28F21/02 , F28F21/085 , H01L21/4871 , H01L23/373 , H01L23/3733 , H01L24/83 , H01L2224/83801 , H01L2224/8384 , H01L2924/00 , H01L2924/0002 , H01L2924/01006 , H01L2924/01028 , H01L2924/01029 , H01L2924/13055
摘要： A method for fabricating a heat sink may include: providing a carbon fiber fabric having carbon fibers and openings, the openings leading from a first side to a second side of the fabric; and electroplating the fabric with metal, wherein metal is deposited with a higher rate at the first side than at the second side of the fabric. Another method for fabricating a heat sink may include: providing a carbon metal composite having metal-coated carbon fibers and openings, the openings leading from a first side to a second side of the carbon metal composite; disposing the composite over a semiconductor element such that the first side of the composite faces the semiconductor element; and bonding the composite to the semiconductor element by means of an electroplating process, wherein metal electrolyte is supplied to an interface between the carbon metal composite and the semiconductor element via the openings.
摘要翻译：一种用于制造散热器的方法可以包括：提供具有碳纤维和开口的碳纤维织物，所述开口从所述织物的第一侧向第二侧延伸; 并用金属电镀织物，其中金属在第一侧以比织物第二面高的速率沉积。制造散热器的另一种方法可以包括：提供具有金属涂覆的碳纤维和开口的碳金属复合材料，所述碳开口从所述碳金属复合材料的第一面到第二面; 将所述复合材料布置在半导体元件上，使得所述复合材料的第一面面对所述半导体元件; 以及通过电镀工艺将所述复合材料结合到所述半导体元件，其中通过所述开口将金属电解质供应到所述碳金属复合材料和所述半导体元件之间的界面。

8. 发明授权

US08072042B1 Integrated inductor and method for manufacturing an integrated inductor 有权
标题翻译：用于制造集成电感器的集成电感器和方法
公开(公告)号：US08072042B1
公开(公告)日：2011-12-06
申请号：US12949849
申请日：2010-11-19
申请人： Friedrich Kroener
发明人： Friedrich Kroener
IPC分类号： H01L27/08 , H01L21/20
CPC分类号： H01L28/10 , H01F41/046 , H01F2017/0066 , H01L27/08
摘要： A method for integrating an inductor into a semiconductor substrate is provided. The method includes providing a semiconductor substrate having a first surface and a second surface and forming at least a first trench and at least two openings in the semiconductor substrate. The first trench and the openings extend from the first surface into the semiconductor substrate, and the first trench has a ring-like shape. A portion of the first trench is arranged between the two openings. The method further includes depositing a magnetically soft material into the first trench to form a ring-like closed magnetisable core structure, depositing a conductive material into the openings to form vias, and forming an electrical cross-connection between the vias.
摘要翻译：提供了一种将电感器集成到半导体衬底中的方法。该方法包括提供具有第一表面和第二表面的半导体衬底，并且在半导体衬底中形成至少第一沟槽和至少两个开口。第一沟槽和开口从第一表面延伸到半导体衬底中，并且第一沟槽具有环形形状。第一沟槽的一部分布置在两个开口之间。所述方法还包括将磁性软材料沉积到所述第一沟槽中以形成环状封闭可磁化芯结构，将导电材料沉积到所述开口中以形成通孔，以及在所述通孔之间形成电交叉连接。

9. 发明授权

US07916493B2 Power semiconductor module 有权
标题翻译：功率半导体模块
公开(公告)号：US07916493B2
公开(公告)日：2011-03-29
申请号：US11536384
申请日：2006-09-28
申请人： Friedrich Kroener , Anton Mauder
发明人： Friedrich Kroener , Anton Mauder
IPC分类号： H05K7/00
CPC分类号： H01L23/49833 , H01L23/3733 , H01L24/33 , H01L25/162 , H01L25/50 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/01041 , H01L2924/01044 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/0106 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H05K1/144 , H05K1/185 , H01L2924/00
摘要： A power semiconductor module has a controllable semiconductor chip (50), a first printed circuit board (1), a second printed circuit board (2), and also has one or a plurality of passive components (13, 18). The first printed circuit board (1) may have a conductor track structure (12, 13, 14), and the second printed circuit board (2) may have a conductor track structure (21, 22, 23, 24). Furthermore, an opening (19) in which the semiconductor chip (50) is arranged can be provided in the first printed circuit board (1). Furthermore, at least one passive component (13, 18) can be arranged on the first printed circuit board (1) or on the second printed circuit board (2).
摘要翻译：功率半导体模块具有可控半导体芯片（50），第一印刷电路板（1），第二印刷电路板（2），并且还具有一个或多个无源部件（13,18）。第一印刷电路板（1）可以具有导体轨道结构（12,13,14），并且第二印刷电路板（2）可以具有导体轨道结构（21,22,23,24）。此外，在第一印刷电路板（1）中可以设置有布置有半导体芯片（50）的开口（19）。此外，至少一个无源部件（13,18）可以布置在第一印刷电路板（1）上或第二印刷电路板（2）上。

10. 发明申请

US20100084768A1 ELECTRONIC COMPONENT, A SEMICONDUCTOR WAFER AND A METHOD FOR PRODUCING AN ELECTRONIC COMPONENT 有权
标题翻译：电子元件，半导体波形和生产电子元件的方法
公开(公告)号：US20100084768A1
公开(公告)日：2010-04-08
申请号：US12245900
申请日：2008-10-06
申请人： Friedrich Kroener
发明人： Friedrich Kroener
IPC分类号： H01L21/768 , H01L23/52
CPC分类号： H01L29/66712 , H01L24/32 , H01L24/33 , H01L29/0657 , H01L29/0873 , H01L29/0878 , H01L29/0886 , H01L29/41741 , H01L29/456 , H01L29/7395 , H01L29/7802 , H01L29/7809 , H01L2224/291 , H01L2224/32238 , H01L2924/01079 , H01L2924/13055 , H01L2924/13091 , H01L2924/014
摘要： An electronic component includes a semiconductor substrate defined by a generally planar first face, a generally planar second face and side faces extending between the generally planar second face and the generally planar first face. The semiconductor substrate has a curved contour between the generally planar second face and the side faces.
摘要翻译：电子部件包括由大致平面的第一面，大致平坦的第二面和在大致平坦的第二面和大致平面的第一面之间延伸的侧面限定的半导体基板。半导体衬底在大致平坦的第二面和侧面之间具有弯曲的轮廓。

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