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1. 发明授权

US06980472B2 Device and method to read a 2-transistor flash memory cell 有权
标题翻译：读取2晶体管闪存单元的器件和方法
公开(公告)号：US06980472B2
公开(公告)日：2005-12-27
申请号：US10498449
申请日：2002-12-05
申请人： Anthonie Meindert Herman Ditewig , Franciscus Petrus Widdershoven , Roger Cuppens
发明人： Anthonie Meindert Herman Ditewig , Franciscus Petrus Widdershoven , Roger Cuppens
IPC分类号： G11C16/06 , G11C5/00 , G11C16/02 , G11C16/04 , G11C16/26 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： G11C16/26
摘要： The present invention relates to electronic memories, more particularly to an improved method and apparatus to read the content of compact 2-transistor flash memory cells.A method of reading a 2-transistor flash memory cell 1 is provided. The memory cell 1 comprises a storage transistor 2 with a storage gate 6 and a selecting transistor 3 with a select gate 7. The method comprises leaving the storage gate 6 floating while the select gate 7 is switched from a first voltage to a second voltage, whereby the first voltage is lower than the second voltage.A device according to the present invention comprises a switching circuit for leaving the storage gate 6 floating while the select gate 7 is switched from the first voltage to the second voltage, the first voltage being lower than the second voltage.
摘要翻译：本发明涉及电子存储器，更具体地说，涉及一种读取紧凑型2-晶体管闪存单元的内容的改进方法和装置。提供读取2晶体管闪存单元1的方法。存储单元1包括具有存储栅极6的存储晶体管2和具有选择栅极7的选择晶体管3。该方法包括在选择栅极7从第一电压切换到第二电压的同时使存储栅极6浮动，由此第一电压低于第二电压。根据本发明的装置包括用于在选择栅极7从第一电压切换到第二电压时使存储栅极6离开的开关电路，第一电压低于第二电压。

2. 发明申请

US20130207206A1 SEMICONDUCTOR DEVICE HAVING AU-CU ELECTRODES, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：具有AU-CU电极的半导体器件及制造半导体器件的方法
公开(公告)号：US20130207206A1
公开(公告)日：2013-08-15
申请号：US13568695
申请日：2012-08-07
申请人： David VAN STEENWINCKEL , Thomas MERELLE , Franciscus Petrus WIDDERSHOVEN , Viet Hoang NGUYEN , Dimitri SOCCOl , Jan Leo Dominique FRANSAER
发明人： David VAN STEENWINCKEL , Thomas MERELLE , Franciscus Petrus WIDDERSHOVEN , Viet Hoang NGUYEN , Dimitri SOCCOl , Jan Leo Dominique FRANSAER
IPC分类号： H01L29/66
CPC分类号： G01N27/4145 , G01N27/3275 , H01L29/66
摘要： A method of manufacturing a biosensor semiconductor device in which copper electrodes at a major surface of the device are modified to form Au—Cu alloy electrodes. Such modification is effected by depositing a gold layer over the device, and then thermally treating the device to promote interdiffusion between the gold and the electrode copper. Alloyed gold-copper is removed from the surface of the device, leaving the exposed electrodes. The electrodes are better compatible with further processing into a biosensor device than is the case with conventional copper electrodes, and the process windows are wider than for gold capped copper electrodes. A biosensor semiconductor device having Au—Cu alloy electrodes is also disclosed.
摘要翻译：一种制造生物传感器半导体器件的方法，其中在器件的主表面上的铜电极被改性以形成Au-Cu合金电极。通过在器件上沉积金层，然后对该器件进行热处理以促进金和电极铜之间的相互扩散来实现这种修改。从器件的表面去除合金金铜，留下暴露的电极。与常规铜电极的情况相比，电极与生物传感器装置的进一步处理更好地兼容，并且处理窗口比金盖铜电极宽。还公开了具有Au-Cu合金电极的生物传感器半导体器件。

3. 发明授权

US08115239B2 Electric device comprising phase change material 有权
标题翻译：包含相变材料的电气装置
公开(公告)号：US08115239B2
公开(公告)日：2012-02-14
申请号：US10599270
申请日：2005-03-16
申请人： Martijn Henri Richard Lankhorst , Erwin Rinaldo Meinders , Robertus Adrianus Maria Wolters , Franciscus Petrus Widdershoven
发明人： Martijn Henri Richard Lankhorst , Erwin Rinaldo Meinders , Robertus Adrianus Maria Wolters , Franciscus Petrus Widdershoven
IPC分类号： H01L29/76
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1226 , H01L45/124 , H01L45/1286 , H01L45/148 , H01L45/1675 , H01L45/1691
摘要： The electric device according to the invention has a resistor comprising a layer of a phase change material which is changeable between a first phase with a first electrical resistivity and a second phase with a second electrical resistivity different from the first electrical resistivity. The phase change material is a fast growth material. The electric device further comprises a switching signal generator for switching the resistor between at least three different electrical resistance values by changing a corresponding portion of the layer of the phase change material from the first phase to the second phase.
摘要翻译：根据本发明的电子装置具有电阻器，该电阻器包括相变材料层，所述相变材料层可以在具有第一电阻率的第一相位和具有不同于第一电阻率的第二电阻率的第二相位之间变化。相变材料是快速生长材料。电子装置还包括切换信号发生器，用于通过将相变材料层的相应部分从第一阶段改变到第二阶段来在至少三个不同的电阻值之间切换电阻器。

4. 发明申请

US20110217206A1 SENSOR AND A METHOD OF ASSEMBLING A SENSOR 有权
标题翻译：传感器和组装传感器的方法
公开(公告)号：US20110217206A1
公开(公告)日：2011-09-08
申请号：US13043352
申请日：2011-03-08
申请人： Romano HOOFMAN , Gerard REUVERS , Franciscus Petrus WIDDERSHOVEN , Evelyne GRIDELET , Marcus Henricus van KLEEF
发明人： Romano HOOFMAN , Gerard REUVERS , Franciscus Petrus WIDDERSHOVEN , Evelyne GRIDELET , Marcus Henricus van KLEEF
IPC分类号： G01N27/00 , H01H11/00
CPC分类号： B01L3/502715 , B01L2200/12 , B01L2300/0645 , G01N27/3275 , Y10T29/49105
摘要： “Click-assembly” methods of assembling a sensor for sensing biologically-active molecules by measuring impedance changes, are disclosed, comprising supporting a bio-sensor on a carrier, the bio-sensor comprising an electronic component having at least one micro-electrode and at least one electrical contact, functionalizing the bio-sensor by physically or chemically coupling a bio-receptor molecule to each of the at least one micro-electrode, and subsequently assembling the bio-sensor with a micro-fluidic unit by means of a clamp which clamps the bio-sensor with the micro-fluidic unit, such that in use a fluid introduced into the micro-fluidic unit is able to contact the bio-receptor and is isolated from the electrical contact. The clamp may be a spring, and the method may avoid a requirement for sealing by chemical or thermal means and thereby avoid damaging the bio-receptor. Sensors which can be assembled according to such methods are also disclosed.
摘要翻译：公开了通过测量阻抗变化来组装用于感测生物活性分子的传感器的“点击组装”方法，其包括在载体上支撑生物传感器，所述生物传感器包括具有至少一个微电极的电子部件和至少一个电接触，通过将所述生物受体分子物理或化学耦合至所述至少一个微电极中的每一个来官能化所述生物传感器，以及随后通过夹具将所述生物传感器与微流体单元组装其利用微流体单元夹持生物传感器，使得在使用中，引入微流体单元的流体能够接触生物接受体并与电接触物隔离。夹具可以是弹簧，并且该方法可以避免通过化学或热方式对密封的要求，从而避免损坏生物受体。还公开了可以根据这些方法组装的传感器。

5. 发明申请

US20100314699A1 ELECTROCHEMICAL SENSOR DEVICE, METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：电化学传感器装置，其制造方法
公开(公告)号：US20100314699A1
公开(公告)日：2010-12-16
申请号：US12517858
申请日：2007-12-07
申请人： Mohammed Meftah , Franciscus Petrus Widdershoven
发明人： Mohammed Meftah , Franciscus Petrus Widdershoven
IPC分类号： H01L29/66 , H01L21/50
CPC分类号： H01L24/73 , G01N27/414 , G01N33/5438 , H01L2924/13091 , H01L2924/00
摘要： An electrochemical sensor device (100) for analysing a sample, the device (100) comprising an electronic chip (101) comprising a sensor portion (102) being sensitive for particles of the sample, a carrier element (103, 104) bonded to the electronic chip (101) to define a fluidic path together with the electronic chip (101), and a counter electrode (105) provided in a surface portion of the carrier element (103, 104).
摘要翻译：一种用于分析样品的电化学传感器装置（100），所述装置（100）包括电子芯片（101），所述电子芯片包括对样品颗粒敏感的传感器部分（102），粘合到所述样品的载体元件（103,104）电子芯片（101）与电子芯片（101）一起限定流体路径，以及设置在载体元件（103,104）的表面部分中的对电极（105）。

6. 发明授权

US07529142B2 Data processing device with a WOM memory 有权
公开(公告)号：US07529142B2
公开(公告)日：2009-05-05
申请号：US10023165
申请日：2001-12-18
申请人： Franciscus Petrus Widdershoven
发明人： Franciscus Petrus Widdershoven
IPC分类号： G11C29/00 , G06F13/00
CPC分类号： G11C16/3495 , G11C16/349
摘要： A data processing device has a memory with writeable and erasable locations, such as a flash memory. The memory locations are store WOM codewords (Write Once Memory codewords in which successive generations of data can be encoded by setting bits from zero to one only). A data encoder encodes a received data value in a new codeword from the WOM code, as a function of the received data value and a previous codeword stored in the currently selected location. When the WOM codeword is exhausted the data encoder selects a new currently selected location from a logical series of locations and stores the new codeword in the new currently selected location. When all locations are exhausted a reset circuit resets a content of the locations in the logical series. On reading the currently selected location is read and decoded.

7. 发明授权

US06885058B2 Semiconductor device and method of manufacturing such a semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06885058B2
公开(公告)日：2005-04-26
申请号：US10462846
申请日：2003-06-16
申请人： Nicole Anne Helena Freddy Wils , Michiel Slotboom , Franciscus Petrus Widdershoven
发明人： Nicole Anne Helena Freddy Wils , Michiel Slotboom , Franciscus Petrus Widdershoven
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/115 , H01L29/41 , H01L29/423 , H01L29/49 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11568 , H01L27/115 , H01L27/11521 , H01L29/42324 , H01L29/42328 , H01L29/66825 , H01L29/66833
摘要： A semiconductor device includes a semiconductor body (1) which is provided at a surface (2) with a non-volatile memory cell comprising a source (3) and a drain (4), and an access gate (14) which is electrically insulated from a gate structure (8) comprising a control gate (9), the gate structure (8) being electrically insulated from the semiconductor body (1) by a gate dielectric (11, 25). The gate dielectric (11, 25) is provided with a charge-storage region wherein data in the form of electric charge can be stored. The access gate (14) has a substantially flat surface portion (17) extending substantially parallel to the surface (2) of the semiconductor body (1) and has the shape of a block which is disposed against the gate structure (8) without overlapping the gate structure.
摘要翻译：半导体器件包括：半导体本体（1），其在表面（2）处设置有包括源极（3）和漏极（4）的非易失性存储单元;以及存取栅极（14），其电绝缘从包括控制栅极（9）的栅极结构（8），栅极结构（8）通过栅极电介质（11,25）与半导体本体（1）电绝缘。栅极电介质（11,25）设置有电荷存储区域，其中可以存储电荷形式的数据。进入门（14）具有基本上平行于半导体本体（1）的表面（2）延伸的基本平坦的表面部分（17），并且具有块状形状，该块形状抵靠栅极结构（8）而不重叠门结构。

8. 发明授权

US06437398B2 One-time UV-programmable non-volatile semiconductor memory and method of programming such a semiconductor memory 失效
标题翻译：一次性UV可编程非易失性半导体存储器和编程这种半导体存储器的方法
公开(公告)号：US06437398B2
公开(公告)日：2002-08-20
申请号：US09846599
申请日：2001-04-30
申请人： Franciscus Petrus Widdershoven
发明人： Franciscus Petrus Widdershoven
IPC分类号： H01L29788
CPC分类号： H01L27/11521 , G11C16/18 , H01L27/115
摘要： One-time UV-programmable read-only memory (1) comprising a number of memory cells in the form of MOS transistors (T) which are arranged in a matrix of rows and columns, each transistor comprising a source and a drain zone (12) and a channel zone (13) formed in a surface zone (11) of a semiconductor substrate (10). Said semiconductor zones adjoin a surface (14) of the semiconductor substrate on which surface a layer structure (17) is formed comprising floating gates (16) and control gates (15). The layer structure is provided with windows (18) through which UV radiation can reach the edges of the floating gates. The memory is further provided with means for generating an electric voltage between the substrate (10) and the control gates (16) during programming the memory by means of UV radiation. Thus, the memory can be programmed without being externally contacted during programming.
摘要翻译：一次性UV可编程只读存储器（1）包括以行和列为矩阵排列的MOS晶体管（T）形式的多个存储器单元，每个晶体管包括源极和漏极区域（12））和形成在半导体衬底（10）的表面区（11）中的沟道区（13）。所述半导体区域邻接在半导体衬底的表面上形成有层结构（17）的表面（14），其包括浮动栅极（16）和控制栅极（15）。层结构设置有窗口（18），UV辐射可以通过该窗口到达浮动门的边缘。存储器还设置有用于在通过UV辐射对存储器进行编程期间在衬底（10）和控制栅极（16）之间产生电压的装置。因此，可以在编程期间对存储器进行编程而不需要外部接触。

9. 发明授权

US08679966B2 Semiconductor device having Au-Cu electrodes, and method of manufacturing semiconductor device 有权
标题翻译：具有Au-Cu电极的半导体器件及半导体器件的制造方法
公开(公告)号：US08679966B2
公开(公告)日：2014-03-25
申请号：US13568695
申请日：2012-08-07
申请人： David Van Steenwinckel , Thomas Merelle , Franciscus Petrus Widdershoven , Viet Hoang Nguyen , Dimitri Soccoi , Jan Leo Dominique Fransaer
发明人： David Van Steenwinckel , Thomas Merelle , Franciscus Petrus Widdershoven , Viet Hoang Nguyen , Dimitri Soccoi , Jan Leo Dominique Fransaer
IPC分类号： H01L21/4763
CPC分类号： G01N27/4145 , G01N27/3275 , H01L29/66
摘要： A method of manufacturing a biosensor semiconductor device in which copper electrodes at a major surface of the device are modified to form Au—Cu alloy electrodes. Such modification is effected by depositing a gold layer over the device, and then thermally treating the device to promote interdiffusion between the gold and the electrode copper. Alloyed gold-copper is removed from the surface of the device, leaving the exposed electrodes. The electrodes are better compatible with further processing into a biosensor device than is the case with conventional copper electrodes, and the process windows are wider than for gold capped copper electrodes. A biosensor semiconductor device having Au—Cu alloy electrodes is also disclosed.
摘要翻译：一种制造生物传感器半导体器件的方法，其中在器件的主表面上的铜电极被改性以形成Au-Cu合金电极。通过在器件上沉积金层，然后对该器件进行热处理以促进金和电极铜之间的相互扩散来实现这种修改。从器件的表面去除合金金铜，留下暴露的电极。与常规铜电极的情况相比，电极与生物传感器装置的进一步处理更好地兼容，并且处理窗口比金盖铜电极宽。还公开了具有Au-Cu合金电极的生物传感器半导体器件。

10. 发明申请

US20080318375A1 Method of Fabricating a Duel-Gate Fet 有权
标题翻译：制造决斗门的方法
公开(公告)号：US20080318375A1
公开(公告)日：2008-12-25
申请号：US11815100
申请日：2006-01-23
申请人： Wibo Daniel Van Noort , Franciscus Petrus Widdershoven , Radu Surdeanu
发明人： Wibo Daniel Van Noort , Franciscus Petrus Widdershoven , Radu Surdeanu
IPC分类号： H01L21/8238
CPC分类号： H01L29/785 , H01L29/66795 , H01L29/7854
摘要： The invention provides a method of fabricating an extremely short-length dual-gate FET, using conventional semi-conductor processing techniques, with extremely small and reproducible fins with a pitch and a width that are both smaller than can be obtained with photolithographic techniques. On a protrusion (2) on a substrate (1), a first layer (3) and a second layer (4) are formed, after which the top surface of the protrusion (2) is exposed. A portion of the first layer (3) is selectively removed relative to the protrusion (2) and the second layer (4), thereby creating a fin (6) and a trench (5). Also a method is presented to form a plurality of fins (6) and trenches (5). The dual-gate FET is created by forming a gate electrode (7) in the trench(es) (5) and a source and drain region. Further a method is presented to fabricate an extremely short-length asymmetric dual-gate FET with two gate electrodes that can be biased separately.
摘要翻译：本发明提供了一种使用常规半导体处理技术制造极短的双栅极FET的方法，其具有非常小且可重现的鳍，其间距和宽度都小于可以用光刻技术获得的。在基板（1）上的突起（2）上形成第一层（3）和第二层（4），然后露出突起（2）的上表面。相对于突起（2）和第二层（4），第一层（3）的一部分被选择性地去除，从而形成翅片（6）和沟槽（5）。还提出了形成多个翅片（6）和沟槽（5）的方法。通过在沟槽（5）中形成栅电极（7）和源极和漏极区域来产生双栅极FET。此外，提出了一种制造具有可分别偏置的两个栅电极的极短的非对称双栅极FET的方法。

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