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1. 发明授权

US06838806B2 Vibratory in-plane tunneling gyroscope 失效
标题翻译：振动平面内隧道陀螺仪
公开(公告)号：US06838806B2
公开(公告)日：2005-01-04
申请号：US10038530
申请日：2002-01-02
申请人： Bee Lee Chua , Holden King Ho Li , Yuan Xu , Francis Eng Hock Tay , William Tze-You Chen
发明人： Bee Lee Chua , Holden King Ho Li , Yuan Xu , Francis Eng Hock Tay , William Tze-You Chen
IPC分类号： G01C19/5726 , G01C19/574 , H02N1/00
CPC分类号： G01C19/574 , G01C19/5726
摘要： A gyroscope comprising: a proof mass; a frame supporting the proof mass; a connection arrangement connecting the proof mass and the frame, the connection arrangement having a first stiffness in a first direction and a second stiffness in a second direction substantially perpendicular to the first direction, one of the stiffness being significantly greater than the other stiffness; and a pair of elements adapted to sense relatively motion therebetween in either the first or the second direction. Also disclosed is a gyroscope comprising: a proof mass; a frame supporting the proof mass and connected to only one edge thereof by a connection arrangement extending between the proof mass and the frame in a first direction, the connection arrangement having a first stiffness in the first direction and a second stiffness in a second direction substantially perpendicular to the first direction, the first stiffness being significantly greater than the second stiffness; and a pair of elements adapted to sense relative motion therebetween in the first direction.

2. 发明授权

US08124251B2 Thin films of ferroelectric materials and a method for preparing same 有权
标题翻译：铁电材料薄膜及其制备方法
公开(公告)号：US08124251B2
公开(公告)日：2012-02-28
申请号：US11333774
申请日：2006-01-17
申请人： Kui Yao , Shuhui Yu , Francis Eng Hock Tay
发明人： Kui Yao , Shuhui Yu , Francis Eng Hock Tay
IPC分类号： B32B9/00
CPC分类号： C23C18/1216 , C23C18/1241 , H01L41/1875 , H01L41/318
摘要： Thin films of ferroelectric material with a high mole fraction of Pb(A2+1/3B5+2/3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1/3B5+2/3)O3 in the ferroelectric material is >0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A2+, and B5+; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.
摘要翻译：基本上在钙钛矿相中具有高摩尔分数的Pb（A2 + 1 / 3B5 + 2/3）O3的铁电材料薄膜，其中A是锌或锌和镁的组合，B是价数5元素作为铌或钽制备。通常，铁电材料中Pb（A2 + 1 / 3B5 + 2/3）O3的摩尔分数> 0.7。制备铁电材料薄膜的方法包括提供含有铅，A2 +和B5 +的前体溶液; 通过向其中加入聚合物物质来改性前体溶液; 将改性的前体溶液施加到基材的表面上并在其上形成涂层; 和（d）对涂层进行热处理，并在钙钛矿相中形成膜。 PEG200作为聚合物种类已获得最佳结果。

3. 发明申请

US20100221415A1 Thin Films of Ferroelectric Materials and a Method for Preparing Same 有权
标题翻译：铁电材料薄膜及其制备方法
公开(公告)号：US20100221415A1
公开(公告)日：2010-09-02
申请号：US12773593
申请日：2010-05-04
申请人： Kui Yao , Shuhui Yu , Francis Eng Hock Tay
发明人： Kui Yao , Shuhui Yu , Francis Eng Hock Tay
IPC分类号： B05D5/12
CPC分类号： C23C18/1216 , C23C18/1241 , H01L41/1875 , H01L41/318
摘要： Thin films of ferroelectric material with a high mole fraction of Pb(A2+1/3B5+2/3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1/3B5+2/3)O3 in the ferroelectric material is >0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A2+, and B5+; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.
摘要翻译：基本上在钙钛矿相中具有高摩尔分数的Pb（A2 + 1 / 3B5 + 2/3）O3的铁电材料薄膜，其中A是锌或锌和镁的组合，B是价数5元素作为铌或钽制备。通常，铁电材料中Pb（A2 + 1 / 3B5 + 2/3）O3的摩尔分数> 0.7。制备铁电材料薄膜的方法包括提供含有铅，A2 +和B5 +的前体溶液; 通过向其中加入聚合物物质来改性前体溶液; 将改性的前体溶液施加到基材的表面上并在其上形成涂层; 和（d）对涂层进行热处理，并在钙钛矿相中形成膜。 PEG200作为聚合物种类已获得最佳结果。

4. 发明授权

US07284432B2 Acceleration sensitive switch 失效
标题翻译：加速度敏感开关
公开(公告)号：US07284432B2
公开(公告)日：2007-10-23
申请号：US11155380
申请日：2005-06-17
申请人： Francis Eng Hock Tay , Ki Bang Lee
发明人： Francis Eng Hock Tay , Ki Bang Lee
IPC分类号： G01P15/125
CPC分类号： G01P15/0891 , G01P15/125
摘要： An acceleration sensitive switch arrangement (208) includes an acceleration sensitive variable capacitor (200), a detection circuit (202) for detecting a capacitance value of the variable capacitor (200), and a switching circuit (204) responsive to a comparison between the detected capacitance and a threshold value.
摘要翻译：加速度敏感开关装置（208）包括加速度敏感可变电容器（200），用于检测可变电容器（200）的电容值的检测电路（202），以及响应于检测电容和阈值。

5. 发明授权

US08696812B2 Thin films of ferroelectric materials and a method for preparing same 有权
标题翻译：铁电材料薄膜及其制备方法
公开(公告)号：US08696812B2
公开(公告)日：2014-04-15
申请号：US12773593
申请日：2010-05-04
申请人： Kui Yao , Shuhui Yu , Francis Eng Hock Tay
发明人： Kui Yao , Shuhui Yu , Francis Eng Hock Tay
IPC分类号： C30B7/00
CPC分类号： C23C18/1216 , C23C18/1241 , H01L41/1875 , H01L41/318
摘要： Thin films of ferroelectric material with a high mole fraction of Pb(A2+1/3B5+2/3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1/3B5+2/3)O3 in the ferroelectric material is >0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A2+, and B5+; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.
摘要翻译：基本上在钙钛矿相中具有高摩尔分数的Pb（A2 + 1 / 3B5 + 2/3）O3的铁电材料薄膜，其中A是锌或锌和镁的组合，B是价数5元素作为铌或钽制备。通常，铁电材料中Pb（A2 + 1 / 3B5 + 2/3）O3的摩尔分数> 0.7。制备铁电材料薄膜的方法包括提供含有铅，A2 +和B5 +的前体溶液; 通过向其中加入聚合物物质来改性前体溶液; 将改性的前体溶液施加到基材的表面上并在其上形成涂层; 和（d）对涂层进行热处理，并在钙钛矿相中形成膜。 PEG200作为聚合物种类已获得最佳结果。

6. 发明申请

US20090155877A1 Biochip for sorting and lysing biological samples 审中-公开
标题翻译：用于分选和裂解生物样品的生物芯片
公开(公告)号：US20090155877A1
公开(公告)日：2009-06-18
申请号：US11631667
申请日：2005-07-05
申请人： Ciprian Iliescu , Guolin Xu , Francis Eng-Hock Tay
发明人： Ciprian Iliescu , Guolin Xu , Francis Eng-Hock Tay
IPC分类号： C12N13/00 , C12M1/00
CPC分类号： B01L3/502761 , B01L3/502707 , B01L2200/0647 , B01L2300/0816 , B01L2300/0864 , B01L2400/0424 , B03C5/005 , B03C5/026 , B03C2201/26 , C12M47/04 , C12M47/06
摘要： A biochip (100) for lysing and/or cell separation is formed to provide a sealed chamber for biological fluid. A conductive layer (140) bonded between upper (130) and lower (150) insulating layers is etched to form a microfluidic channel (250) between two electrodes (190, 200). The microfluidic channel connects a fluid inlet (11) and fluid outlet (120). The electrodes (190, 200) form an un-even electric field in the channel (250) to generate a dielectrophoretic force on the cells/particles within the sample fluid. A voltage source applies a suitable voltage to separate and/or lyse cells within the fluid.
摘要翻译：形成用于裂解和/或细胞分离的生物芯片（100），以提供用于生物流体的密封室。蚀刻结合在上（130）和下（150）绝缘层之间的导电层（140），以在两个电极（190,200）之间形成微流体通道（250）。微流体通道连接流体入口（11）和流体出口（120）。电极（190,200）在通道（250）中形成非均匀电场，以在样品流体内的细胞/颗粒上产生介电电泳力。电压源施加合适的电压以分离和/或溶解流体内的细胞。

7. 发明申请

US20090263671A1 Ferroelectric Poly (Vinylidene Fluoride) Film on a Substrate and Method for its Formation 审中-公开
标题翻译：基板上的铁电聚（亚乙烯基氟化物）膜及其形成方法
公开(公告)号：US20090263671A1
公开(公告)日：2009-10-22
申请号：US12106685
申请日：2008-04-21
申请人： Kui Yao , Shuting Chen , Francis Eng Hock Tay
发明人： Kui Yao , Shuting Chen , Francis Eng Hock Tay
IPC分类号： B32B15/082 , B05D3/02
CPC分类号： C23C26/02 , B05D3/0254 , H01L41/317 , H01L41/45 , Y10T428/31678
摘要： Ferroelectric Poly(vinylidene fluoride) Film on a Substrate and Method for its Formation A method of producing a poly(vinylidene fluoride) (“PVDF”) film on a substrate from a precursor solution is disclosed. The method comprises preparing the precursor solution for the PVDF film and dissolving an additive in the precursor solution, the additive being selected from the group consisting of: a hydrate salt, and a hygroscopic chemical. The PVDF is added to the precursor solution. The PVDF solution is coated on a substrate to form an as-deposited PVDF film which is dried and crystallized at an elevated temperature. The dried and crystallized as-deposited PVDF film is annealed at a further elevated temperature. The further elevated temperature is greater than the elevated temperature but less than a melting point of the as-deposited PVDF film. The additive dehydrates at the further elevated temperature. A corresponding product is also disclosed.
摘要翻译：基板上的铁电性聚（偏二氟乙烯）膜及其形成方法公开了从前体溶液在基材上制备聚（偏二氟乙烯）（“PVDF”）膜的方法。该方法包括制备用于PVDF膜的前体溶液并将添加剂溶解在前体溶液中，添加剂选自：水合物盐和吸湿性化合物。将PVDF加入到前体溶液中。将PVDF溶液涂覆在基材上以形成沉积的PVDF膜，其在高温下干燥并结晶。干燥并结晶沉积的PVDF膜在进一步升高的温度下退火。进一步升高的温度大于升高的温度但小于沉积的PVDF膜的熔点。添加剂在进一步升高的温度下脱水。还公开了相应的产品。

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