专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09058934B2 Method of forming a VDF oligomer or co-oligomer film on a substrate and an electrical device comprising the VDF oligomer or co-oligomer film on the substrate 有权
标题翻译：在基板上形成VDF低聚物或共低聚物膜的方法以及在基板上包括VDF低聚物或共低聚物膜的电气装置
公开(公告)号：US09058934B2
公开(公告)日：2015-06-16
申请号：US13518866
申请日：2009-12-23
申请人： Kui Yao , Shuting Chen , Eng Hock Francis Tay
发明人： Kui Yao , Shuting Chen , Eng Hock Francis Tay
IPC分类号： H01L41/09 , H01G4/18 , H01L41/193 , H01L41/45 , H01L41/317
CPC分类号： H01G4/18 , H01L41/193 , H01L41/317 , H01L41/45
摘要： A method of forming a vinylidene fluoride (VDF) oligomer or co-oligomer film on a substrate is disclosed. The method comprises forming a VDF oligomer or co-oligomer precursor solution; depositing the VDF oligomer or co-oligomer precursor solution onto the substrate to form a preliminary VDF oligomer or co-oligomer film on the substrate; and applying uniaxial pressure on the preliminary VDF oligomer or co-oligomer film and the substrate at an elevated temperature to form the VDF oligomer or co-oligomer film on the substrate. The substrate may comprise a metal surface which may be used as a bottom electrode and a top electrode may be deposited on the VDF oligomer or co-oligomer film. The VDF oligomer or co-oligomer film, the bottom electrode on the substrate and the top electrode on the VDF oligomer or co-oligomer film form an electrical device.
摘要翻译：公开了一种在衬底上形成偏二氟乙烯（VDF）低聚物或共低聚物膜的方法。该方法包括形成VDF低聚物或共低聚物前体溶液; 将VDF低聚物或共聚低聚物前体溶液沉积到衬底上以在衬底上形成预备的VDF低聚物或共低聚物膜; 并在升高的温度下对预备的VDF低聚物或共低聚物膜和基底施加单轴压力，以在基底上形成VDF低聚物或共低聚物膜。衬底可以包括可以用作底部电极的金属表面，并且顶部电极可以沉积在VDF低聚物或共聚低聚物膜上。 VDF低聚物或共低聚物膜，基底上的底部电极和VDF低聚物或共低聚物膜上的顶部电极形成电气装置。

2. 发明申请

US20120313482A1 METHOD OF FORMING A VDF OLIGOMER OR CO-OLIGOMER FILM ON A SUBSTRATE AND AN ELECTRICAL DEVICE COMPRISING THE VDF OLIGOMER OR CO-OLIGOMER FILM ON THE SUBSTRATE 有权
标题翻译：在底材上形成VDF低聚物或共低聚物膜的方法以及包含基底上的VDF低聚物或共低聚物膜的电气设备
公开(公告)号：US20120313482A1
公开(公告)日：2012-12-13
申请号：US13518866
申请日：2009-12-23
申请人： Kui Yao , Shuting Chen , Eng Hock Francis Tay
发明人： Kui Yao , Shuting Chen , Eng Hock Francis Tay
IPC分类号： B05D7/24 , B05D3/12 , B05D5/12 , H01L41/22 , H01L41/00 , H01L43/10 , H01L43/12 , H01G4/00 , G01J5/00 , B05D3/02 , H01G13/00
CPC分类号： H01G4/18 , H01L41/193 , H01L41/317 , H01L41/45
摘要： A method of forming a vinylidene fluoride (VDF) oligomer or co-oligomer film on a substrate is disclosed. The method comprises forming a VDF oligomer or co-oligomer precursor solution; depositing the VDF oligomer or co-oligomer precursor solution onto the substrate to form a preliminary VDF oligomer or co-oligomer film on the substrate; and applying uniaxial pressure on the preliminary VDF oligomer or co-oligomer film and the substrate at an elevated temperature to form the VDF oligomer or co-oligomer film on the substrate. The substrate may comprise a metal surface which may be used as a bottom electrode and a top electrode may be deposited on the VDF oligomer or co- oligomer film The VDF oligomer or co-oligomer film, the bottom electrode on the substrate and the top electrode on the VDF oligomer or co-oligomer film form an electrical device.
摘要翻译：公开了一种在衬底上形成偏二氟乙烯（VDF）低聚物或共低聚物膜的方法。该方法包括形成VDF低聚物或共低聚物前体溶液; 将VDF低聚物或共聚低聚物前体溶液沉积到衬底上以在衬底上形成预备的VDF低聚物或共低聚物膜; 并在升高的温度下对预备的VDF低聚物或共低聚物膜和基底施加单轴压力，以在基底上形成VDF低聚物或共低聚物膜。衬底可以包括可以用作底部电极的金属表面，并且顶部电极可以沉积在VDF低聚物或共聚低聚物膜上.VDF低聚物或共低聚物膜，衬底上的底部电极和顶部电极在VDF低聚物或共低聚物膜上形成电气装置。

3. 外观设计

USD752548S1 Tennis ball speaker 有权
标题翻译：网球音箱
公开(公告)号：USD752548S1
公开(公告)日：2016-03-29
申请号：US29520612
申请日：2015-03-16
申请人： Shuting Chen
设计人： Shuting Chen

4. 外观设计

USD752547S1 Football speaker 有权
标题翻译：足球演讲者
公开(公告)号：USD752547S1
公开(公告)日：2016-03-29
申请号：US29520611
申请日：2015-03-16
申请人： Shuting Chen
设计人： Shuting Chen

5. 外观设计

USD752544S1 Baseball speaker 有权
标题翻译：棒球演讲者
公开(公告)号：USD752544S1
公开(公告)日：2016-03-29
申请号：US29520608
申请日：2015-03-16
申请人： Shuting Chen
设计人： Shuting Chen

6. 外观设计

USD752546S1 Cricket ball speaker 有权
标题翻译：板球球扬声器
公开(公告)号：USD752546S1
公开(公告)日：2016-03-29
申请号：US29520610
申请日：2015-03-16
申请人： Shuting Chen
设计人： Shuting Chen

7. 外观设计

USD752545S1 Basketball speaker 有权
标题翻译：篮球扬声器
公开(公告)号：USD752545S1
公开(公告)日：2016-03-29
申请号：US29520609
申请日：2015-03-16
申请人： Shuting Chen
设计人： Shuting Chen

8. 发明申请

US20090263671A1 Ferroelectric Poly (Vinylidene Fluoride) Film on a Substrate and Method for its Formation 审中-公开
标题翻译：基板上的铁电聚（亚乙烯基氟化物）膜及其形成方法
公开(公告)号：US20090263671A1
公开(公告)日：2009-10-22
申请号：US12106685
申请日：2008-04-21
申请人： Kui Yao , Shuting Chen , Francis Eng Hock Tay
发明人： Kui Yao , Shuting Chen , Francis Eng Hock Tay
IPC分类号： B32B15/082 , B05D3/02
CPC分类号： C23C26/02 , B05D3/0254 , H01L41/317 , H01L41/45 , Y10T428/31678
摘要： Ferroelectric Poly(vinylidene fluoride) Film on a Substrate and Method for its Formation A method of producing a poly(vinylidene fluoride) (“PVDF”) film on a substrate from a precursor solution is disclosed. The method comprises preparing the precursor solution for the PVDF film and dissolving an additive in the precursor solution, the additive being selected from the group consisting of: a hydrate salt, and a hygroscopic chemical. The PVDF is added to the precursor solution. The PVDF solution is coated on a substrate to form an as-deposited PVDF film which is dried and crystallized at an elevated temperature. The dried and crystallized as-deposited PVDF film is annealed at a further elevated temperature. The further elevated temperature is greater than the elevated temperature but less than a melting point of the as-deposited PVDF film. The additive dehydrates at the further elevated temperature. A corresponding product is also disclosed.
摘要翻译：基板上的铁电性聚（偏二氟乙烯）膜及其形成方法公开了从前体溶液在基材上制备聚（偏二氟乙烯）（“PVDF”）膜的方法。该方法包括制备用于PVDF膜的前体溶液并将添加剂溶解在前体溶液中，添加剂选自：水合物盐和吸湿性化合物。将PVDF加入到前体溶液中。将PVDF溶液涂覆在基材上以形成沉积的PVDF膜，其在高温下干燥并结晶。干燥并结晶沉积的PVDF膜在进一步升高的温度下退火。进一步升高的温度大于升高的温度但小于沉积的PVDF膜的熔点。添加剂在进一步升高的温度下脱水。还公开了相应的产品。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式