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    • 1. 发明授权
    • Thin films of ferroelectric materials and a method for preparing same
    • 铁电材料薄膜及其制备方法
    • US08696812B2
    • 2014-04-15
    • US12773593
    • 2010-05-04
    • Kui YaoShuhui YuFrancis Eng Hock Tay
    • Kui YaoShuhui YuFrancis Eng Hock Tay
    • C30B7/00
    • C23C18/1216C23C18/1241H01L41/1875H01L41/318
    • Thin films of ferroelectric material with a high mole fraction of Pb(A2+1/3B5+2/3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1/3B5+2/3)O3 in the ferroelectric material is >0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A2+, and B5+; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.
    • 基本上在钙钛矿相中具有高摩尔分数的Pb(A2 + 1 / 3B5 + 2/3)O3的铁电材料薄膜,其中A是锌或锌和镁的组合,B是价数5元素 作为铌或钽制备。 通常,铁电材料中Pb(A2 + 1 / 3B5 + 2/3)O3的摩尔分数> 0.7。 制备铁电材料薄膜的方法包括提供含有铅,A2 +和B5 +的前体溶液; 通过向其中加入聚合物物质来改性前体溶液; 将改性的前体溶液施加到基材的表面上并在其上形成涂层; 和(d)对涂层进行热处理,并在钙钛矿相中形成膜。 PEG200作为聚合物种类已获得最佳结果。
    • 2. 发明授权
    • Thin films of ferroelectric materials and a method for preparing same
    • 铁电材料薄膜及其制备方法
    • US08124251B2
    • 2012-02-28
    • US11333774
    • 2006-01-17
    • Kui YaoShuhui YuFrancis Eng Hock Tay
    • Kui YaoShuhui YuFrancis Eng Hock Tay
    • B32B9/00
    • C23C18/1216C23C18/1241H01L41/1875H01L41/318
    • Thin films of ferroelectric material with a high mole fraction of Pb(A2+1/3B5+2/3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1/3B5+2/3)O3 in the ferroelectric material is >0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A2+, and B5+; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.
    • 基本上在钙钛矿相中具有高摩尔分数的Pb(A2 + 1 / 3B5 + 2/3)O3的铁电材料薄膜,其中A是锌或锌和镁的组合,B是价数5元素 作为铌或钽制备。 通常,铁电材料中Pb(A2 + 1 / 3B5 + 2/3)O3的摩尔分数> 0.7。 制备铁电材料薄膜的方法包括提供含有铅,A2 +和B5 +的前体溶液; 通过向其中加入聚合物物质来改性前体溶液; 将改性的前体溶液施加到基材的表面上并在其上形成涂层; 和(d)对涂层进行热处理,并在钙钛矿相中形成膜。 PEG200作为聚合物种类已获得最佳结果。
    • 3. 发明申请
    • Thin Films of Ferroelectric Materials and a Method for Preparing Same
    • 铁电材料薄膜及其制备方法
    • US20100221415A1
    • 2010-09-02
    • US12773593
    • 2010-05-04
    • Kui YaoShuhui YuFrancis Eng Hock Tay
    • Kui YaoShuhui YuFrancis Eng Hock Tay
    • B05D5/12
    • C23C18/1216C23C18/1241H01L41/1875H01L41/318
    • Thin films of ferroelectric material with a high mole fraction of Pb(A2+1/3B5+2/3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1/3B5+2/3)O3 in the ferroelectric material is >0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A2+, and B5+; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.
    • 基本上在钙钛矿相中具有高摩尔分数的Pb(A2 + 1 / 3B5 + 2/3)O3的铁电材料薄膜,其中A是锌或锌和镁的组合,B是价数5元素 作为铌或钽制备。 通常,铁电材料中Pb(A2 + 1 / 3B5 + 2/3)O3的摩尔分数> 0.7。 制备铁电材料薄膜的方法包括提供含有铅,A2 +和B5 +的前体溶液; 通过向其中加入聚合物物质来改性前体溶液; 将改性的前体溶液施加到基材的表面上并在其上形成涂层; 和(d)对涂层进行热处理,并在钙钛矿相中形成膜。 PEG200作为聚合物种类已获得最佳结果。
    • 4. 发明申请
    • Thin films of ferroelectric materials and a method for preparing same
    • 铁电材料薄膜及其制备方法
    • US20060183249A1
    • 2006-08-17
    • US11333774
    • 2006-01-17
    • Kui YaoShuhui YuFrancis Tay
    • Kui YaoShuhui YuFrancis Tay
    • H01L21/00
    • C23C18/1216C23C18/1241H01L41/1875H01L41/318
    • Thin films of ferroelectric material with a high mole fraction of Pb(A2+1/3B5+2/3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1/3B5+2/3)O3 in the ferroelectric material is >0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A2+, and B5+; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.
    • 具有高摩尔分数Pb(A 2+ 3 + 3/5 + 5 + 2/3)的铁电材料薄膜, 基本上在钙钛矿相中,其中A是锌或锌和镁的组合,并且B是价数5元素如铌或钽。 通常,Pb(A 2+ + 3/3→5 + 2/3/3)O的摩尔分数 铁电体材料中的<3> > 0.7。 制备铁电材料薄膜的方法包括提供含有铅,A 2+ +和B 5+的前体溶液; 通过向其中加入聚合物物质来改性前体溶液; 将改性的前体溶液施加到基材的表面上并在其上形成涂层; 和(d)对涂层进行热处理,并在钙钛矿相中形成膜。 PEG200作为聚合物种类已获得最佳结果。