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1. 发明申请

US20140148358A1 SYSTEM AND METHOD FOR DETECTING ONE OR MORE ANALYTES IN A FLUID 审中-公开
标题翻译：检测流体中一种或多种分析物的系统和方法
公开(公告)号：US20140148358A1
公开(公告)日：2014-05-29
申请号：US14130464
申请日：2012-06-28
申请人： Fong Yau Sam Li , Huanan Wu , Mahe Liu
发明人： Fong Yau Sam Li , Huanan Wu , Mahe Liu
IPC分类号： G01N33/18 , G01N33/543 , G01N1/18
CPC分类号： G01N33/54373 , G01N1/18 , G01N33/18
摘要： Various embodiments provide a system for detecting one or more analytes in a fluid. The system comprises: a controller adapted to obtain one or more sample streams of the fluid. The controller is configured in use to form a plurality of output streams. Each output stream comprises at least part of one of the one or more sample streams. The system further comprises: a detector adapted to receive from the controller the plurality of output streams and comprising a plurality of sensors. Each sensor is operable to detect an interaction between a corresponding detecting agent and a corresponding analyte. The detector is configured in use to detect one or more said interactions using the plurality of output streams to determine if the fluid contains one or more said analytes. A corresponding method is also provided.
摘要翻译：各种实施方案提供了用于检测流体中的一种或多种分析物的系统。该系统包括：适于获得流体的一个或多个样品流的控制器。控制器被配置为用于形成多个输出流。每个输出流包括一个或多个样本流中的一个的至少一部分。该系统还包括：适于从控制器接收多个输出流并包括多个传感器的检测器。每个传感器可操作以检测相应的检测剂和相应的分析物之间的相互作用。检测器被配置为用于使用多个输出流来检测一个或多个所述交互以确定流体是否包含一个或多个所述分析物。还提供了相应的方法。

2. 发明授权

US06281117B1 Method to form uniform silicide features 失效
标题翻译：形成均匀硅化物特征的方法
公开(公告)号：US06281117B1
公开(公告)日：2001-08-28
申请号：US09425994
申请日：1999-10-25
申请人： Lap Chan , Chaw Sing Ho , Fong Yau Sam Li , Hou Tee Ng
发明人： Lap Chan , Chaw Sing Ho , Fong Yau Sam Li , Hou Tee Ng
IPC分类号： H01L214763
CPC分类号： H01L21/28518 , Y10S977/859
摘要： A method for forming uniform ultrathin silicide features in the fabrication of an integrated circuit is described. A metal layer is deposited over the surface of a silicon semiconductor substrate. An array of heated metallic tips contact the metal layer whereby the metal layer is transformed to a metal silicide where it is contacted by the metallic tips and wherein the metal layer not contacted by the metallic tips is unreacted. The unreacted metal layer is removed leaving the metal silicide as uniform ultrathin silicide features. Alternatively, a metal acetate layer is spin-coated over the surface of a silicon semiconductor substrate. An array of heated metallic tips contacts the metal acetate layer whereby the metal acetate layer is transformed to a metal silicide where the metallic tips contact the metal acetate layer and wherein the metal acetate slayer not contacted by the metallic tips is unreacted. Or the metal acetate layer is heat treated at localized regions using a multi-array of tips aligned in a specific layout. Or the metal acetate layer is contacted by heated metallic tips under vacuum so that the metal does not oxidize. The unreacted metal acetate layer is removed leaving the metal silicide as the uniform ultrathin silicide features.
摘要翻译：描述了在制造集成电路中形成均匀的超薄硅化物特征的方法。金属层沉积在硅半导体衬底的表面上。加热的金属尖端的阵列接触金属层，由此将金属层转变为金属硅化物，在金属硅化物中金属层与金属顶端接触，并且其中不与金属尖端接触的金属层是未反应的。除去未反应的金属层，留下金属硅化物作为均匀的超薄硅化物特征。或者，将金属乙酸盐层旋涂在硅半导体衬底的表面上。加热的金属尖端的阵列接触金属乙酸盐层，由此金属乙酸盐层转变为金属硅化物，其中金属尖端与金属乙酸盐层接触，并且其中未与金属尖端接触的金属乙酸盐钝化剂未反应。或者使用在特定布局中对齐的多阵列尖端在局部区域对金属乙酸盐层进行热处理。或者金属乙酸盐层在真空下被加热的金属尖端接触，使得金属不氧化。除去未反应的金属乙酸盐层，留下金属硅化物作为均匀的超薄硅化物特征。

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