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1. 发明授权

US09115463B2 Bleaching of substrates 有权
标题翻译：漂白底物
公开(公告)号：US09115463B2
公开(公告)日：2015-08-25
申请号：US13641445
申请日：2011-04-15
申请人： Ronald Hage , Fabien Pierre Guy Gaulard , Kimberly Soraya Yang
发明人： Ronald Hage , Fabien Pierre Guy Gaulard , Kimberly Soraya Yang
IPC分类号： D06L3/02 , B01J31/18 , C11D3/39
CPC分类号： D06L3/025 , B01J31/182 , B01J2231/70 , B01J2531/0216 , B01J2531/72 , C11D3/3932 , D06L4/12 , D06L4/15
摘要： The present invention concerns the treatment of substrates with a preformed transition metal catalyst in an aqueous solution. The transitional metal catalyst is a dinuclear Mn transitional metal catalyst and its ligand has the following formula (I): and p is 3.
摘要翻译：本发明涉及在水溶液中用预成型的过渡金属催化剂处理基材。过渡金属催化剂是双核Mn过渡金属催化剂，其配体具有下式（I）：p为3。

2. 发明申请

US20130137620A1 Bleaching of Substrates 有权
标题翻译：底物漂白
公开(公告)号：US20130137620A1
公开(公告)日：2013-05-30
申请号：US13641445
申请日：2011-04-15
申请人： Ronald Hage , Fabien Pierre Guy Gaulard , Kimberly Soraya Yang
发明人： Ronald Hage , Fabien Pierre Guy Gaulard , Kimberly Soraya Yang
IPC分类号： D06L3/02
CPC分类号： D06L3/025 , B01J31/182 , B01J2231/70 , B01J2531/0216 , B01J2531/72 , C11D3/3932 , D06L4/12 , D06L4/15
摘要： The present invention concerns the treatment of substrates with a preformed transition metal catalyst in an aqueous solution. The transitional metal catalyst is a dinuclear Mn transitional metal catalyst and its ligand has the following formula (I): and p is 3.
摘要翻译：本发明涉及在水溶液中用预成型的过渡金属催化剂处理基材。过渡金属催化剂是双核Mn过渡金属催化剂，其配体具有下式（I）：p为3。

3. 发明申请

US20090311572A1 INTEGRATED FUEL CELL AND MANUFACTURING METHOD 审中-公开
标题翻译：集成燃料电池和制造方法
公开(公告)号：US20090311572A1
公开(公告)日：2009-12-17
申请号：US12159088
申请日：2006-12-27
申请人： Mathieu Roy , Fabien Pierre
发明人： Mathieu Roy , Fabien Pierre
IPC分类号： H01M2/02 , H01M4/82
CPC分类号： H01M8/1097 , H01M8/0206 , H01M8/0232 , H01M8/04089 , H01M8/1004 , Y02P70/56 , Y10T29/49115
摘要： A fuel cell having its active stack resting on a thin conductive layer, bearing on a wafer provided with through gas inlet channels, the thin conductive layer protruding in the active stack in front of each channel and being transparent to the gas.
摘要翻译：一种燃料电池，其活性叠层位于薄导电层上，承载于设置有通过气体入口通道的晶片上，该薄导电层在每个通道的前方突出于有源堆叠中，并对气体透明。

4. 发明申请

US20060141339A1 Wafer provided with transverse conductors and application to a fuel cell 有权
标题翻译：晶圆片设有横向导体并应用于燃料电池
公开(公告)号：US20060141339A1
公开(公告)日：2006-06-29
申请号：US11317436
申请日：2005-12-22
申请人： Mathieu Roy , Fabien Pierre
发明人： Mathieu Roy , Fabien Pierre
IPC分类号： H01M4/96 , H01M4/88 , B32B3/10 , B32B3/06
CPC分类号： B82Y30/00 , H01L21/76898 , H01L2221/1094 , H01M4/926 , H01M8/0234 , H01M8/1007 , H01M8/1097 , Y02P70/56 , Y10T428/24273 , Y10T428/249955 , Y10T428/249975
摘要： A thin wafer comprising through holes filled at least partially with conductive carbon nanotubes generally oriented transversally to the wafer. A fuel cell comprising, in a thin wafer, a through hole filled with an electrolyte surrounded with barriers of carbon nanotubes generally oriented transversally to the wafer.
摘要翻译：包括至少部分地填充有通常横向于晶片定向的导电碳纳米管的通孔的薄晶片。一种燃料电池，其在薄晶片中包括填充有电解质的通孔，所述电解质围绕着通常横向于所述晶片的碳纳米管的屏障。

5. 发明授权

US07993796B2 Wafer provided with transverse conductors and application to a fuel cell 有权
标题翻译：晶圆片设有横向导体并应用于燃料电池
公开(公告)号：US07993796B2
公开(公告)日：2011-08-09
申请号：US11317436
申请日：2005-12-22
申请人： Mathieu Roy , Fabien Pierre
发明人： Mathieu Roy , Fabien Pierre
IPC分类号： H01M8/04 , H01M8/08 , H01M4/02 , H01M4/36 , H01M4/62
CPC分类号： B82Y30/00 , H01L21/76898 , H01L2221/1094 , H01M4/926 , H01M8/0234 , H01M8/1007 , H01M8/1097 , Y02P70/56 , Y10T428/24273 , Y10T428/249955 , Y10T428/249975
摘要： A thin wafer comprising through holes filled at least partially with conductive carbon nanotubes generally oriented transversally to the wafer. A fuel cell comprising, in a thin wafer, a through hole filled with an electrolyte surrounded with barriers of carbon nanotubes generally oriented transversally to the wafer.
摘要翻译：包括至少部分地填充有通常横向于晶片定向的导电碳纳米管的通孔的薄晶片。一种燃料电池，其在薄晶片中包括填充有电解质的通孔，所述电解质围绕着通常横向于所述晶片的碳纳米管的屏障。

6. 发明授权

US06759726B1 Formation of an isolating wall 有权
标题翻译：形成隔离墙
公开(公告)号：US06759726B1
公开(公告)日：2004-07-06
申请号：US09426822
申请日：1999-10-22
申请人： Christine Anceau , Fabien Pierre , Olivier Bonnaud
发明人： Christine Anceau , Fabien Pierre , Olivier Bonnaud
IPC分类号： H01L21336
CPC分类号： H01L21/761 , H01L21/2257 , H01L21/763
摘要： A method of forming an isolating wall in a semiconductor substrate of a first conductivity type, including the steps of boring in the substrate separate recesses according to the desired isolating wall contour; filling the recesses with a material containing a dopant of the second conductivity type; and performing an anneal step so that regions of the second conductivity type diffused from neighboring recesses join. A first series of recesses is formed from the upper surface and a second series of recesses is formed from the lower surface. The recesses have a substantially rectangular section, the large dimension of which is perpendicular to the alignment of the recesses and a depth smaller than or equal to the half-thickness of the substrate.
摘要翻译：一种在第一导电类型的半导体衬底中形成隔离壁的方法，包括以下步骤：在所述衬底中钻孔，根据期望的隔离壁轮廓分离凹槽; 用含有第二导电类型的掺杂剂的材料填充凹部; 并执行退火步骤，使得从相邻凹部扩散的第二导电类型的区域接合。从上表面形成第一系列凹部，并且从下表面形成第二系列凹部。凹部具有基本上矩形的部分，其大尺寸垂直于凹部的对准并且深度小于或等于基底的半厚度。

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