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1. 发明授权

US08202810B2 Low-H plasma treatment with N2 anneal for electronic memory devices 有权
标题翻译：用于电子存储器件的N 2退火的低-H等离子体处理
公开(公告)号：US08202810B2
公开(公告)日：2012-06-19
申请号：US11971331
申请日：2008-01-09
申请人： Alexander H. Nickel , Allen L. Evans , Minh Quoc Tran , Lu You , Minh Van Ngo , Pei-Yuan Gao , William S. Brennan , Erik Wilson , Sung Jin Kim , Hieu Trung Pham
发明人： Alexander H. Nickel , Allen L. Evans , Minh Quoc Tran , Lu You , Minh Van Ngo , Pei-Yuan Gao , William S. Brennan , Erik Wilson , Sung Jin Kim , Hieu Trung Pham
IPC分类号： H01L21/31
CPC分类号： H01L21/76877 , H01L21/76814 , H01L21/76828 , H01L21/76834 , H01L21/76883 , Y10S438/902
摘要： A method for forming a single damascene and/or dual damascene, contact and interconnect structure, comprising: performing front end processing, depositing copper including a copper barrier, annealing the copper in at least 90% N2 with less than 10% H2, performing planarization, performing in-situ low-H NH3 plasma treatment and low Si—H SiN etch stop layer deposition, and performing remaining back end processing.
摘要翻译：一种用于形成单个镶嵌和/或双镶嵌，接触和互连结构的方法，包括：执行前端处理，沉积包含铜屏障的铜，在至少90％的N 2中以小于10％的H 2退火铜，进行平面化，进行原位低H NH 3等离子体处理和低Si-H SiN蚀刻停止层沉积，并执行剩余的后端处理。

2. 发明申请

US20080108193A1 Cu annealing for improved data retention in flash memory devices 有权
标题翻译： Cu退火以改善闪存器件中的数据保留
公开(公告)号：US20080108193A1
公开(公告)日：2008-05-08
申请号：US11593086
申请日：2006-11-06
申请人： Lu You , Alexander Nickel , Minh Q. Tran , Minh-Van Ngo , Hieu Pham , Erik Wilson , Hirokazu Tokuno , Amir Hossein Jafarpour , Inkuk Kang , Robert Huertas
发明人： Lu You , Alexander Nickel , Minh Q. Tran , Minh-Van Ngo , Hieu Pham , Erik Wilson , Hirokazu Tokuno , Amir Hossein Jafarpour , Inkuk Kang , Robert Huertas
IPC分类号： H01L21/336 , H01L21/44
CPC分类号： H01L21/76883 , H01L27/11521
摘要： Data retention in flash memory devices, such as mirrorbit devices, is improved by reducing the generation and/or diffusion of hydrogen ions during back end processing, such as annealing inlaid Cu. Embodiments include annealing inlaid Cu in an N2 atmosphere containing low H2 or no H2, and at temperatures less than 200° C., e.g., 100° C. to 150° C.
摘要翻译：通过减少后端处理中的氢离子的产生和/或扩散（例如退火的Cu）来改善闪存器件（例如镜像位装置）中的数据保留。实施方案包括在含有低H 2 N 2或无H 2 N的N 2 O 2气氛中以及在低于200℃的温度下退火嵌入的Cu，例如，100℃至150℃

3. 发明申请

US20080096364A1 Conformal liner for gap-filling 审中-公开
标题翻译：用于间隙填充的保形衬套
公开(公告)号：US20080096364A1
公开(公告)日：2008-04-24
申请号：US11582442
申请日：2006-10-18
申请人： Erik Wilson , Minh-Van Ngo , Hieu Pham , Robert Huertas , Lu You , Hirokazu Tokuno , Alexander Nickel , Minh Tran
发明人： Erik Wilson , Minh-Van Ngo , Hieu Pham , Robert Huertas , Lu You , Hirokazu Tokuno , Alexander Nickel , Minh Tran
IPC分类号： H01L21/76
CPC分类号： H01L21/823468 , H01L21/76829 , H01L21/76837 , H01L21/823437
摘要： Gap filling between features which are closely spaced is significantly improved by initially depositing a thin conformal layer followed by depositing a layer of gap filling dielectric material. Embodiments include depositing a thin conformal layer of silicon nitride or silicon oxide, as by atomic layer deposition or pulsed layer deposition, into the gap between adjacent gate electrode structures such that it flows into undercut regions of dielectric spacers on side surfaces of the gate electrode structures, and then depositing a layer of BPSG or P-HDP oxide on the thin conformal layer into the gap. Embodiments further include depositing the layers at a temperature less than 430° C., as by depositing a P-HDP oxide after depositing the conformal liner when the gate electrode structures include a layer of nickel silicide.
摘要翻译：通过初始沉积薄的共形层，然后沉积一层间隙填充电介质材料，密切间隔的特征之间的间隙填充显着改善。实施例包括通过原子层沉积或脉冲层沉积将氮化硅或氧化硅的薄保形层沉积到相邻栅电极结构之间的间隙中，使得其流到栅电极结构的侧表面上的电介质间隔物的底切区域，然后在薄的共形层上沉积一层BPSG或P-HDP氧化物到间隙中。实施例还包括在低于430℃的温度下沉积层，如通过在栅极电极结构包括硅化镍层沉积保形衬垫之后沉积P-HDP氧化物。

4. 发明申请

US20050189802A1 School bus occupant restraint passenger seat 审中-公开
标题翻译：校车乘客约束乘客座椅
公开(公告)号：US20050189802A1
公开(公告)日：2005-09-01
申请号：US11065556
申请日：2005-02-24
申请人： Patrick Mattes , Erik Nelson , Thomas Graham , Erik Wilson
发明人： Patrick Mattes , Erik Nelson , Thomas Graham , Erik Wilson
IPC分类号： B60N2/24 , B60N2/42 , B60N2/427 , B60N2/64 , B60N2/68 , B60R21/00 , B60R22/02 , B60R22/26 , B60R22/28
CPC分类号： B60N2/242 , B60N2/42709 , B60N2/64 , B60N2/68 , B60R22/023 , B60R22/26 , B60R22/28 , B60R2021/0067
摘要： A vehicle passenger seat mixed passive/active occupant restraint provides a two element seat back frame. A first frame element provides for energy absorption from a seat belt fitted to a passenger in the vehicle passenger seat. The second frame element absorbs energy from an unrestrained passenger impacting thereon. The first frame element may be mounted forward from, or nesting, the second frame element.
摘要翻译：混合被动/主动乘员约束的车辆乘客座椅提供两个元件的座椅靠背框架。第一框架元件提供从安装在车辆乘客座椅中的乘客的座椅安全带的能量吸收。第二框架元件从碰撞在其上的无限乘客吸收能量。第一框架元件可以安装在第二框架元件的前面或嵌套中。

5. 发明授权

US09299643B2 Ruthenium interconnect with high aspect ratio and method of fabrication thereof 有权
标题翻译：具有高纵横比的钌互连及其制造方法
公开(公告)号：US09299643B2
公开(公告)日：2016-03-29
申请号：US12286149
申请日：2008-09-29
申请人： Zheng Wang , Connie Wang , Erik Wilson , Wen Yu , Robert Chiu
发明人： Zheng Wang , Connie Wang , Erik Wilson , Wen Yu , Robert Chiu
IPC分类号： H01L29/40 , H01L23/485 , H01L21/768 , H01L23/532 , H01L27/105 , H01L27/115
CPC分类号： H01L23/485 , H01L21/76877 , H01L23/53252 , H01L27/105 , H01L27/1052 , H01L27/115 , H01L27/11517 , H01L2924/0002 , H01L2924/00
摘要： An electrically conductive interconnect is provided through an opening in a dielectric layer, electrically connecting two conductive layers. In one embodiment, the interconnect is formed by ruthenium entirely filling the opening in the dielectric layer. In another embodiment, an adhesion layer of titanium is provided in the opening prior to providing the ruthenium. In using this approach, an aspect ratio (i.e., the ratio of the length of the interconnect to the width thereof) of 20:1 or greater is achievable.
摘要翻译：导电互连通过介电层中的开口设置，电连接两个导电层。在一个实施例中，互连由完全填充介电层中的开口的钌形成。在另一个实施方案中，在提供钌之前，在开口中提供钛的粘附层。在使用这种方法时，可实现20:1或更大的纵横比（互连长度与其宽度之比）。

6. 发明申请

US20100270845A1 Injection Mold Seat Riser for Modular School Bus Seats 失效
标题翻译：用于模块化校车座椅的注塑模座椅立管
公开(公告)号：US20100270845A1
公开(公告)日：2010-10-28
申请号：US12431205
申请日：2009-04-28
申请人： Erik Wilson , Yogesh Dattatraya Aundhkar , Atul Prabhakar Khanapurkar , Narasimha Dhanayutham Gupta
发明人： Erik Wilson , Yogesh Dattatraya Aundhkar , Atul Prabhakar Khanapurkar , Narasimha Dhanayutham Gupta
IPC分类号： A47C7/02
CPC分类号： B60N2/68 , B60N2/682 , B60N2/686
摘要： A modular seat frame for a school bus seat includes riser assemblies for supporting the seat fabricated from a moldable material reinforced locally by attachment and reinforcement members.
摘要翻译：用于校车座椅的模块化座椅框架包括用于支撑由通过附接和加强构件局部增强的可模制材料制成的座椅的立管组件。

7. 发明授权

US07534732B1 Semiconductor devices with copper interconnects and composite silicon nitride capping layers 有权
标题翻译：具有铜互连的半导体器件和复合氮化硅覆盖层
公开(公告)号：US07534732B1
公开(公告)日：2009-05-19
申请号：US11356311
申请日：2006-02-17
申请人： Minh Van Ngo , Erik Wilson , Hieu Pham , Robert Huertas , Lu You , Hirokazu Tokuno , Alexander Nickel , Minh Tran
发明人： Minh Van Ngo , Erik Wilson , Hieu Pham , Robert Huertas , Lu You , Hirokazu Tokuno , Alexander Nickel , Minh Tran
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/31
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/3185 , H01L21/76832 , H01L21/76834 , H01L27/11521 , H01L27/11568
摘要： Cu interconnects are formed with composite capping layers for reduced electromigration, improved adhesion between Cu and the capping layer, and reduced charge loss in associated non-volatile transistors. Embodiments include depositing a first relatively thin silicon nitride layer having a relatively high concentration of Si—H bonds on the upper surface of a layer of Cu for improved adhesion and reduced electromigration, and depositing a second relatively thick silicon nitride layer having a relatively low concentration of Si—H bonds on the first silicon nitride layer for reduced charge loss.
摘要翻译： Cu互连形成有用于减少电迁移的复合覆盖层，Cu和覆盖层之间改善的粘附性，以及相关联的非易失性晶体管中的减少的电荷损失。实施例包括在Cu层的上表面上沉积具有较高浓度的Si-H键的第一相对较薄的氮化硅层，以改善粘附性和减少电迁移，以及沉积具有较低浓度的第二较厚的氮化硅层的Si-H键在第一氮化硅层上以减少电荷损失。

8. 发明申请

US20050200172A1 School bus passenger seat with integrated restraints 失效
标题翻译：校车乘客座椅配有综合约束
公开(公告)号：US20050200172A1
公开(公告)日：2005-09-15
申请号：US11061050
申请日：2005-02-17
申请人： Thomas Graham , Erik Nelson , Patrick Mattes , Erik Wilson
发明人： Thomas Graham , Erik Nelson , Patrick Mattes , Erik Wilson
IPC分类号： B60N2/42
CPC分类号： B60N2/242 , B60N2/4221 , B60N2/42745 , Y10T24/45461 , Y10T403/11
摘要： The invention involves a seat system with a movable and immovable portions that may be maintained and still operate during transients as required under the federal regulations. There is a quick release serviceability latch for a school bus passenger seat with integrated restraints. The inner and outer seat backs must be quickly detached from one another to facilitate repair or replacement of damaged seat components. A movable plunger is rigidly attached to the inner seat back frame. Another bracket with hole to accept the plunger is rigidly attached to the back pan of the outer back. The attachment of inner to outer seat backs must be strong enough so that they can't be pulled apart by hand but at the same time be detachable in the event of a crash. A tab that engages the plunger separates upon a rapid deceleration event.
摘要翻译：本发明涉及一种座椅系统，其具有可移动和不可移动的部分，其可以被维护并且在根据联邦法规要求的瞬变期间仍然运行。具有综合限制的校车乘客座位的快速释放可用性闩锁。内外座椅靠背必须彼此快速拆卸，以便维修或更换损坏的座椅部件。可移动柱塞刚性地附接到内座椅靠背框架。具有孔的另一个支架用于接受柱塞刚性地附接到外背的后盘。内外座椅靠背的连接必须足够坚固，以免手动拉开，但同时可在发生碰撞的情况下拆卸。接触柱塞的突片在快速减速事件时分离。

9. 发明授权

US08415256B1 Gap-filling with uniform properties 有权
标题翻译：间隙填充均匀性
公开(公告)号：US08415256B1
公开(公告)日：2013-04-09
申请号：US12982364
申请日：2010-12-30
申请人： Alexander Nickel , Lu You , Hirokazu Tokuno , Minh Tran , Minh Van Ngo , Hieu Pham , Erik Wilson , Robert Huertas
发明人： Alexander Nickel , Lu You , Hirokazu Tokuno , Minh Tran , Minh Van Ngo , Hieu Pham , Erik Wilson , Robert Huertas
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/022 , H01L21/02348 , H01L21/76224 , H01L21/76828 , H01L21/76829 , H01L21/76837
摘要： During semiconductor fabrication homogeneous gap-filling is achieved by depositing a thin dielectric layer into the gap, post deposition curing, and then repeating deposition and post deposition curing until gap-filling is completed. Embodiments include depositing a layer of low deposition temperature gap-fill dielectric into a high aspect ratio opening, such as a shallow trench or a gap between closely spaced apart gate electrode structures, as at a thickness of about 10 Å to about 500 Å, curing after deposition, as by UV radiation or by heating at a temperature of about 400° C. to about 1000° C., depositing another layer of low deposition temperature gap-filled dielectric, and curing after deposition. Embodiments include separately depositing and separately curing multiple layers.
摘要翻译：在半导体制造期间，通过将薄介电层沉积到间隙中，后沉积固化，然后重复沉积和后沉积固化直到间隙填充完成来实现均匀间隙填充。实施例包括将低沉积温度间隙填充电介质的层沉积到高纵横比开口中，例如浅沟槽或紧密间隔开的栅电极结构之间的间隙，其厚度约为至约500，固化在沉积之后，如通过UV辐射或在约400℃至约1000℃的温度下加热，沉积另一层低沉积温度充满间隙的电介质，并在沉积后固化。实施例包括分别沉积和分别固化多层。

10. 发明授权

US08026169B2 Cu annealing for improved data retention in flash memory devices 有权
标题翻译： Cu退火以改善闪存器件中的数据保留
公开(公告)号：US08026169B2
公开(公告)日：2011-09-27
申请号：US11593086
申请日：2006-11-06
申请人： Lu You , Alexander Nickel , Minh Q. Tran , Minh-Van Ngo , Hieu Pham , Erik Wilson , Hirokazu Tokuno , Amir Hossein Jafarpour , Inkuk Kang , Robert Huertas
发明人： Lu You , Alexander Nickel , Minh Q. Tran , Minh-Van Ngo , Hieu Pham , Erik Wilson , Hirokazu Tokuno , Amir Hossein Jafarpour , Inkuk Kang , Robert Huertas
IPC分类号： H01L21/4763
CPC分类号： H01L21/76883 , H01L27/11521
摘要： Data retention in flash memory devices, such as mirrorbit devices, is improved by reducing the generation and/or diffusion of hydrogen ions during back end processing, such as annealing inlaid Cu. Embodiments include annealing inlaid Cu in an N2 atmosphere containing low H2 or no H2, and at temperatures less than 200° C., e.g., 100° C. to 150° C.
摘要翻译：通过减少后端处理中的氢离子的产生和/或扩散（例如退火的Cu）来改善闪存器件（例如镜像位装置）中的数据保留。实施方案包括在含有低H 2或不含H 2的N 2气氛中以及在低于200℃，例如100℃至150℃的温度下退火镶嵌Cu。

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