专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070257317A1 Method of forming a body-tie 有权
标题翻译：形成身体的方法
公开(公告)号：US20070257317A1
公开(公告)日：2007-11-08
申请号：US11415703
申请日：2006-05-02
申请人： Paul Fechner , Gordon Shaw , Eric Vogt
发明人： Paul Fechner , Gordon Shaw , Eric Vogt
IPC分类号： H01L27/12
CPC分类号： H01L29/78615 , H01L29/66772
摘要： A method of forming a body-tie. The method includes forming the body-tie during an STI scheme of an SOI process. During the STI scheme, a first trench is formed. The first trench stops before a buried oxide layer of the SOI substrate. The first trench may determine a height of body tie that is shared between at least two FETs. A second trench may also be formed within the first trench. The second trench stops in the SOI substrate. The second trench defines the location and shape of a body-tie. Once the location and shape of the body-tie are defined, an oxide is deposited above the body-tie. The deposited oxide prevents certain implants from entering the body tie. By preventing these implants, a source and a drain implant may be self-aligned to the source and drain areas without requiring the use of the photoresist mask to shield the body tie regions from the source and drain implant.
摘要翻译：一种形成身体的方法。该方法包括在SOI工艺的STI方案期间形成体系。在STI方案中，形成第一沟槽。第一沟槽在SOI衬底的掩埋氧化物层之前停止。第一沟槽可以确定在至少两个FET之间共享的身体连接的高度。也可以在第一沟槽内形成第二沟槽。第二沟槽在SOI衬底中停止。第二个沟槽定义了一个领带的位置和形状。一旦定义了身体领带的位置和形状，就会在身体绑带上方沉积氧化物。沉积的氧化物防止某些植入物进入身体束带。通过防止这些植入物，源极和漏极注入可以与源极和漏极区域自对准，而不需要使用光致抗蚀剂掩模来屏蔽源极和漏极植入物的主体连接区域。

2. 发明申请

US20070257310A1 Body-tied MOSFET device with strained active area 审中-公开
标题翻译：具有应变有源面积的体耦MOSFET器件
公开(公告)号：US20070257310A1
公开(公告)日：2007-11-08
申请号：US11415932
申请日：2006-05-02
申请人： Weston Roper , Eric Vogt
发明人： Weston Roper , Eric Vogt
IPC分类号： H01L27/12 , H01L21/8234 , H01L21/8238 , H01L21/336 , H01L27/01 , H01L31/0392
CPC分类号： H01L29/78615 , H01L21/84 , H01L27/1203 , H01L29/0603 , H01L29/7842 , H01L29/7849
摘要： A body-tied MOSFET device and method of fabrication are presented. In the method of fabrication, oxygen diffuses and reacts down a first axis of a pFET or nFET. This results in a partial oxidation of a buried-oxide/silicon island interface. The partial oxidation produces a thickness variation in the silicon island that creates a stress along the first axis. The stress along the first axis modifies a device characteristic of the FET. Oxidation along a second, perpendicular, axis may also be inhibited. The partial oxidation may be incorporated in SOI and STI based process flows. In addition, a dual-gate oxidation process may further enhance device characteristics.
摘要翻译：提出了一种体耦MOSFET器件及其制造方法。在制造方法中，氧扩散并使pFET或nFET的第一轴向下反应。这导致掩埋氧化物/硅岛界面的部分氧化。部分氧化产生硅岛中的厚度变化，其产生沿着第一轴的应力。沿着第一轴的应力改变了FET的器件特性。也可以抑制沿第二垂直轴的氧化。部分氧化可以并入SOI和STI的工艺流程中。此外，双栅极氧化工艺可以进一步增强器件特性。

3. 发明申请

US20060145086A1 Dose rate simulation 有权
标题翻译：剂量率模拟
公开(公告)号：US20060145086A1
公开(公告)日：2006-07-06
申请号：US11029308
申请日：2005-01-05
申请人： Harry Liu , Keith Golke , Eric Vogt , Michael Liu
发明人： Harry Liu , Keith Golke , Eric Vogt , Michael Liu
IPC分类号： G01T1/24
CPC分类号： G06F17/5036
摘要： Behaviors of a transistor during a dose rate event can be modeled using a circuit simulation software package. A subcircuit model replaces a transistor in a circuit design to be simulated. The subcircuit model can be in the form of a schematic-based representation or a netlist. The subcircuit model provides a model of a source junction and a drain junction in the transistor during the dose rate event. The subcircuit model also includes the size of the transistor being replaced and the dose rate of the dose rate event. Once the transistor is replaced with the subcircuit model, a dose rate simulation may be performed to determine the dose rate hardness of the circuit design.
摘要翻译：在剂量率事件期间晶体管的行为可以使用电路仿真软件包进行建模。子电路模型取代要仿真的电路设计中的晶体管。子电路模型可以是基于原理图的表示形式或网表。子电路模型在剂量率事件期间提供晶体管中的源极结和漏极结的模型。子电路模型还包括被替换的晶体管的尺寸和剂量率事件的剂量率。一旦晶体管被子电路模型替代，可以执行剂量率模拟来确定电路设计的剂量率硬度。

4. 发明授权

US08248254B2 Methods and systems for certifying provenance of alcoholic beverages 有权
标题翻译：认证酒精来源的方法和系统
公开(公告)号：US08248254B2
公开(公告)日：2012-08-21
申请号：US13211137
申请日：2011-08-16
申请人： Eric Vogt , Ruth Churchill
发明人： Eric Vogt , Ruth Churchill
IPC分类号： G08B17/00 , G08B13/14 , G08B21/00 , G01W1/00 , G06F7/00
CPC分类号： G06Q10/00 , G06Q10/087
摘要： A system for certifying provenance of an alcoholic beverage includes a radio-frequency identification tag and a server. The radio-frequency identification tag, associated with a bottle containing an alcoholic beverage, periodically measures a plurality of values of an environmental condition of the bottle. The radio-frequency identification tag stores the plurality of measured values. The server receives the plurality of measured values for analysis. The server provides, via a user interface, a description of a provenance of the alcoholic beverage, the description generated responsive to an analysis of the plurality of measured values.
摘要翻译：用于认证酒精来源的系统包括射频识别标签和服务器。与含有酒精饮料的瓶子相关联的射频识别标签周期性地测量瓶子的环境条件的多个值。射频识别标签存储多个测量值。服务器接收多个测量值进行分析。服务器通过用户界面提供酒精饮料的来源的描述，响应于对多个测量值的分析而产生的描述。

5. 发明申请

US20070224838A1 Method of straining a silicon island for mobility improvement 审中-公开
标题翻译：对硅岛进行应变以提高移动性的方法
公开(公告)号：US20070224838A1
公开(公告)日：2007-09-27
申请号：US11389703
申请日：2006-03-27
申请人： Eric Vogt , Paul Fechner
发明人： Eric Vogt , Paul Fechner
IPC分类号： H01L21/31
CPC分类号： H01L29/0603 , H01L21/02238 , H01L21/31662 , H01L29/66772 , H01L29/7842 , H01L29/78654
摘要： A method for improving mobility by bending a silicon island. Oxygen diffuses and reacts down a first axis of a pFET or NFET. This results in a partial oxidation of a buried-oxide/silicon island interface. The partial oxidation produces a thickness variation in the silicon island that creates a stress along the first axis. The stress along the first axis produces an increase in carrier mobility. Oxidation along a second, perpendicular, axis is inhibited to prevent a decrease in carrier mobility. The partial oxidation may be incorporated in SOI and STI based process flows. In addition, a dual-gate oxidation process may further enhance the observed increase in carrier mobility.
摘要翻译：一种通过弯曲硅岛来提高移动性的方法。氧扩散并对pFET或NFET的第一轴进行反应。这导致掩埋氧化物/硅岛界面的部分氧化。部分氧化产生硅岛中的厚度变化，其产生沿着第一轴的应力。沿着第一轴的应力产生载流子迁移率的增加。抑制沿着第二垂直轴的氧化以防止载流子迁移率的降低。部分氧化可以并入SOI和STI的工艺流程中。此外，双栅氧化工艺可进一步增强观察到的载流子迁移率的增加。

6. 发明申请

US20050260774A1 Method of incorporating magnetic materials in a semiconductor manufacturing process 失效
标题翻译：在半导体制造工艺中并入磁性材料的方法
公开(公告)号：US20050260774A1
公开(公告)日：2005-11-24
申请号：US11182943
申请日：2005-07-18
申请人： Dale Berndt , Andrzej Peczalski , Eric Vogt , William Witcraft
发明人： Dale Berndt , Andrzej Peczalski , Eric Vogt , William Witcraft
IPC分类号： G11C11/14 , H01F10/30 , H01L21/8246 , H01L27/22 , H01L21/00 , G01B7/14 , G01B7/30 , G01R33/06 , H01L43/06
CPC分类号： G11C11/14 , B82Y10/00 , H01F10/30 , H01F41/32 , H01L27/22
摘要： A method for incorporating magnetic materials in a semiconductor manufacturing process includes manufacturing a semiconductor device including interlayers and dielectric layers, depositing a magnetic layer above a semiconductor device and forming metallized contacts for connecting interlayers of the semiconductor device. With the method of the present invention, the deposition of the magnetic material is integrated with the semiconductor manufacturing process.
摘要翻译：一种用于在半导体制造工艺中并入磁性材料的方法包括制造包括中间层和电介质层的半导体器件，在半导体器件上沉积磁性层并形成用于连接半导体器件的夹层的金属化触点。利用本发明的方法，磁性材料的沉积与半导体制造工艺相结合。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式