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    • 2. 发明授权
    • Circuit for aligning clock to parallel data
    • 将时钟对准并行数据的电路
    • US08355478B1
    • 2013-01-15
    • US12475414
    • 2009-05-29
    • James Douglas SeefeldtWeston RoperJames Hansen
    • James Douglas SeefeldtWeston RoperJames Hansen
    • H04L7/033
    • H03L7/08
    • Method and system for aligning a clock signal to parallel data are described. According to one embodiment, a clock shifting circuit shifts an incoming clock signal relative to an incoming data signal, and a data clocking circuit uses the shifted clock signal to reclock the incoming data signal. The clock shifting circuit may comprise a phase locked loop (PLL) coupled with multiple D flip flops (DFFs) connected in series. Divisional combinatorial logic may be disposed between DFFs in the series. Data clocking circuits may comprise one DFF to reclock each incoming data bit, a pair of DFFs to reclock each incoming data bit, or other circuits such as true-complement blocks to serve as local oscillators to mixers. Multiple shifted clock signals may be produced, such as those shifted 60, 90, 120, 180, 240, and 270 degrees relative to the incoming clock signal.
    • 描述了将时钟信号对准并行数据的方法和系统。 根据一个实施例,时钟移位电路相对于输入数据信号移动输入时钟信号,并且数据时钟电路使用移位时钟信号重新锁定输入数据信号。 时钟转换电路可以包括与多个D触发器(DFF)串联连接的锁相环(PLL)。 分数组合逻辑可以设置在该系列中的DFF之间。 数据时钟电路可以包括一个DFF以重新锁定每个输入数据位,一对DFF以重新锁定每个输入数据位,或其他电路,例如真实补码块,以用作混频器的本地振荡器。 可以产生多个移位时钟信号,例如相对于输入时钟信号偏移60,90,120,180,240和270度的移位时钟信号。
    • 3. 发明申请
    • AUTOMATIC CONTROL OF CLOCK DUTY CYCLE
    • 时钟周期的自动控制
    • US20100308878A1
    • 2010-12-09
    • US12455572
    • 2009-06-03
    • Xiaoxin FengWeston RoperJames D. Seefeldt
    • Xiaoxin FengWeston RoperJames D. Seefeldt
    • H03L7/06H03K5/04
    • H03K5/156
    • In general, this disclosure is directed to a duty cycle correction (DCC) circuit that adjusts a falling edge of a clock signal to achieve a desired duty cycle. In some examples, the DCC circuit may generate a pulse in response to a falling edge of an input clock signal, delay the pulse based on a control voltage, adjust the falling edge of the input clock signal based on the delayed pulse to produce an output clock signal, and adjust the control voltage based on the difference between a duty cycle of the output clock signal and a desired duty cycle. Since the DCC circuit adjusts the falling edge of the clock cycle to achieve a desired duty cycle, the DCC may be incorporated into existing PLL control loops that adjust the rising edge of a clock signal without interfering with the operation of such PLL control loops.
    • 通常,本公开涉及一种调整时钟信号的下降沿以实现期望的占空比的占空比校正(DCC)电路。 在一些示例中,DCC电路可以响应于输入时钟信号的下降沿产生脉冲,基于控制电压延迟脉冲,基于延迟的脉冲调整输入时钟信号的下降沿以产生输出 时钟信号,并且基于输出时钟信号的占空比与期望的占空比之间的差来调节控制电压。 由于DCC电路调整时钟周期的下降沿以实现期望的占空比,所以DCC可以被并入现有的PLL控制环路中,该PLL控制环路调整时钟信号的上升沿,而不会干扰这种PLL控制环路的操作。
    • 4. 发明申请
    • Memory cell with a vertically integrated delay element
    • 具有垂直集成延迟元件的存储单元
    • US20070103965A1
    • 2007-05-10
    • US11268007
    • 2005-11-07
    • Weston Roper
    • Weston Roper
    • G11C11/00
    • G11C11/412
    • A method and device for a vertically integrated delay element are presented. The vertically integrated delay element includes a portion of an interconnect sandwich. The interconnect sandwich includes dielectric layers and metal layers. The portion of the interconnect sandwich is used to form a capacitor, such as a Metal Insulator Metal (MIM) capacitor, in one or more of the dielectric and metal layers of the interconnect sandwich. The capacitor increases the RC delay time of the delay element. The capacitor is also coupled to a Field Effect Transistor (FET). The FET has an increased drain resistance that may be used to further increase the RC delay of the delay element.
    • 提出了一种用于垂直集成的延迟元件的方法和装置。 垂直集成的延迟元件包括互连夹层的一部分。 互连夹层包括电介质层和金属层。 互连夹层的部分用于在互连夹层的一个或多个介电层和金属层中形成诸如金属绝缘体金属(MIM)电容器的电容器。 电容增加了延迟元件的RC延迟时间。 电容器也耦合到场效应晶体管(FET)。 FET具有增加的漏极电阻,其可用于进一步增加延迟元件的RC延迟。
    • 10. 发明申请
    • RAM cell with soft error protection using ferroelectric material
    • 使用铁电材料的具有软错误保护的RAM单元
    • US20070103961A1
    • 2007-05-10
    • US11268006
    • 2005-11-07
    • Weston RoperCheisan Yue
    • Weston RoperCheisan Yue
    • G11C11/22
    • G11C11/22G11C11/4125
    • A static random access memory (SRAM) cell with single event and soft error protection using ferroelectric material is presented. The SRAM cell comprises two inverters in a mutual feedback loop, with the output of each of the inverters coupled to the input of the other. A ferroelectric capacitor is coupled to the output of one of the inverters in order to induce an RC delay and provide single event upset (SEU), single event effect (SEE), single event transient (SET), and soft error protection. In addition, a method is presented where ferroelectric capacitor of the system is fabricated after the underlayers of the SRAM cell have been implemented in order to avoid substantial changes to standard underlayer processing.
    • 介绍了使用铁电材料的单事件和软错误保护的静态随机存取存储器(SRAM)单元。 SRAM单元包括互反馈环路中的两个反相器,每个反相器的输出耦合到另一个的输入端。 铁电电容器耦合到一个逆变器的输出端,以引起RC延迟,并提供单次事件不平衡(SEU),单事件效应(SEE),单事件瞬态(SET)和软错误保护。 另外,在SRAM单元的底层已被实现以避免对标准底层处理的实质性改变之后,制造了系统的铁电电容器的方法。