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1. 发明授权

US08389991B2 Thin film transistor, display device, and electronic device 有权
标题翻译：薄膜晶体管，显示器件和电子器件
公开(公告)号：US08389991B2
公开(公告)日：2013-03-05
申请号：US12951683
申请日：2010-11-22
申请人： Narihiro Morosawa , Eri Fukumoto , Yasuhiro Terai
发明人： Narihiro Morosawa , Eri Fukumoto , Yasuhiro Terai
IPC分类号： H01L29/04 , H01L31/20 , H01L31/036 , H01L31/0376
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/78606
摘要： The present invention provides a thin film transistor using an oxide semiconductor as a channel, controlling threshold voltage to a positive direction, and realizing improved reliability. The thin film transistor includes: a gate electrode; a pair of source/drain electrodes; an oxide semiconductor layer provided between the gate electrode and the pair of source/drain electrodes and forming a channel; a first insulating film as a gate insulating film provided on the gate electrode side of the oxide semiconductor layer; and a second insulating film provided on the pair of source/drain electrodes side of the oxide semiconductor layer. The first insulating film and/or the second insulating film contain/contains fluorine.
摘要翻译：本发明提供一种使用氧化物半导体作为沟道的薄膜晶体管，将阈值电压控制在正方向，并实现可靠性的提高。薄膜晶体管包括：栅电极; 一对源极/漏极; 设置在所述栅极电极和所述一对源极/漏极电极之间并形成沟道的氧化物半导体层; 设置在氧化物半导体层的栅电极侧的作为栅极绝缘膜的第一绝缘膜; 以及设置在所述氧化物半导体层的所述一对源极/漏极侧的第二绝缘膜。第一绝缘膜和/或第二绝缘膜含有/含有氟。

2. 发明授权

US08378351B2 Thin film transistor, display device, and electronic unit 有权
标题翻译：薄膜晶体管，显示装置和电子单元
公开(公告)号：US08378351B2
公开(公告)日：2013-02-19
申请号：US13078543
申请日：2011-04-01
申请人： Eri Fukumoto , Yasuhiro Terai , Narihiro Morosawa
发明人： Eri Fukumoto , Yasuhiro Terai , Narihiro Morosawa
IPC分类号： H01L29/04
CPC分类号： H01L29/7869 , H01L29/517
摘要： A thin film transistor using oxide semiconductor for a channel, which may be controlled such that threshold voltage is positive and may be improved in reliability is provided. The thin film transistor includes a gate electrode, a pair of source/drain electrodes, an oxide semiconductor layer forming a channel and provided between the gate electrode and the pair of source/drain electrodes, a first insulating film as a gate insulating film provided on the oxide semiconductor layer on a side near the gate electrode, and a second insulating film provided on the oxide semiconductor layer on a side near the pair of source/drain electrodes. One or both of the first insulating film and the second insulating film includes an aluminum oxide having a film density of 2.70 g/cm3 or more and less than 2.79 g/cm3.
摘要翻译：提供了使用用于沟道的氧化物半导体的薄膜晶体管，其可以被控制使得阈值电压为正并且可以提高可靠性。薄膜晶体管包括栅极电极，一对源极/漏极电极，形成沟道的氧化物半导体层，设置在栅极电极和一对源极/漏极电极之间，第一绝缘膜作为栅极绝缘膜设置在所述氧化物半导体层位于所述栅电极附近的一侧，所述第二绝缘膜设置在所述一对源/漏电极附近的所述氧化物半导体层上。第一绝缘膜和第二绝缘膜中的一个或两个包括膜密度为2.70g / cm 3以上且小于2.79g / cm 3的氧化铝。

3. 发明申请

US20110186853A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT 有权
标题翻译：薄膜晶体管，其制造方法和显示单元
公开(公告)号：US20110186853A1
公开(公告)日：2011-08-04
申请号：US13014363
申请日：2011-01-26
申请人： Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai , Narihiro Morosawa
发明人： Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai , Narihiro Morosawa
IPC分类号： H01L29/12 , H01L21/336
CPC分类号： H01L29/78606 , H01L29/12 , H01L29/7869
摘要： A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.
摘要翻译：提供薄膜晶体管。薄膜晶体管包括栅极，栅极绝缘膜和氧化物半导体膜，其中栅电极的至少一部分包括金属氧化物。除了制造方法之外，还提供了包括薄膜晶体管的电子装置和显示装置。

4. 发明申请

US20110140116A1 THIN FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC DEVICE 有权
标题翻译：薄膜晶体管，显示器件和电子器件
公开(公告)号：US20110140116A1
公开(公告)日：2011-06-16
申请号：US12951683
申请日：2010-11-22
申请人： Narihiro Morosawa , Eri Fukumoto , Yasuhiro Terai
发明人： Narihiro Morosawa , Eri Fukumoto , Yasuhiro Terai
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/78606
摘要： The present invention provides a thin film transistor using an oxide semiconductor as a channel, controlling threshold voltage to a positive direction, and realizing improved reliability. The thin film transistor includes: a gate electrode; a pair of source/drain electrodes; an oxide semiconductor layer provided between the gate electrode and the pair of source/drain electrodes and forming a channel; a first insulating film as a gate insulating film provided on the gate electrode side of the oxide semiconductor layer; and a second insulating film provided on the pair of source/drain electrodes side of the oxide semiconductor layer. The first insulating film and/or the second insulating film contain/contains fluorine.
摘要翻译：本发明提供一种使用氧化物半导体作为沟道的薄膜晶体管，将阈值电压控制在正方向，并实现可靠性的提高。薄膜晶体管包括：栅电极; 一对源极/漏极; 设置在所述栅极电极和所述一对源极/漏极电极之间并形成沟道的氧化物半导体层; 设置在氧化物半导体层的栅电极侧的作为栅极绝缘膜的第一绝缘膜; 以及设置在所述氧化物半导体层的所述一对源极/漏极侧的第二绝缘膜。第一绝缘膜和/或第二绝缘膜含有/含有氟。

5. 发明授权

US08633971B2 Liquid crystal shutter and image display observation system 有权
标题翻译：液晶快门和图像显示观察系统
公开(公告)号：US08633971B2
公开(公告)日：2014-01-21
申请号：US12661963
申请日：2010-03-26
申请人： Yuichi Inoue , Eri Fukumoto , Tsuyoshi Kamada , Ryo Ogawa , Yuji Nakahata
发明人： Yuichi Inoue , Eri Fukumoto , Tsuyoshi Kamada , Ryo Ogawa , Yuji Nakahata
IPC分类号： H04N13/04
CPC分类号： G02F1/1313 , G02B27/26 , G02F1/133528
摘要： A liquid crystal shutter includes a plurality of liquid crystal layers arranged in a light-incident direction; and a plurality of polarizers attached to each of the plurality of liquid crystal layers, polarization axes of 2 adjacent polarizers that have a liquid crystal layer therebetween being crossed at an angle of 90°, the accumulated value of degrees of polarization of polarizers that have polarization axes in a first direction being identical to that of degrees of polarizations of polarizers that have polarization axes in a second direction that crosses the first direction at an angle of 90°.
摘要翻译：液晶快门包括沿光入射方向布置的多个液晶层; 并且多个偏振器连接到多个液晶层中的每一个上，两个相邻的偏振器的偏振轴在其间具有90°的角度交叉，偏振器的偏振度的累积值具有极化在第一方向上的轴与偏振器的偏振度相同，偏振度的偏振轴在第二方向上以90°的角度穿过第一方向。

6. 发明申请

US20110248270A1 THIN FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC UNIT 有权
标题翻译：薄膜晶体管，显示器件和电子单元
公开(公告)号：US20110248270A1
公开(公告)日：2011-10-13
申请号：US13078543
申请日：2011-04-01
申请人： Eri Fukumoto , Yasuhiro Terai , Narihiro Morosawa
发明人： Eri Fukumoto , Yasuhiro Terai , Narihiro Morosawa
IPC分类号： H01L29/04
CPC分类号： H01L29/7869 , H01L29/517
摘要： A thin film transistor using oxide semiconductor for a channel, which may be controlled such that threshold voltage is positive and may be improved in reliability is provided. The thin film transistor includes a gate electrode, a pair of source/drain electrodes, an oxide semiconductor layer forming a channel and provided between the gate electrode and the pair of source/drain electrodes, a first insulating film as a gate insulating film provided on the oxide semiconductor layer on a side near the gate electrode, and a second insulating film provided on the oxide semiconductor layer on a side near the pair of source/drain electrodes. One or both of the first insulating film and the second insulating film includes an aluminum oxide having a film density of 2.70 g/cm3 or more and less than 2.79 g/cm3.
摘要翻译：提供了使用用于沟道的氧化物半导体的薄膜晶体管，其可以被控制使得阈值电压为正并且可以提高可靠性。薄膜晶体管包括栅极电极，一对源极/漏极电极，形成沟道的氧化物半导体层，设置在栅极电极和一对源极/漏极电极之间，第一绝缘膜作为栅极绝缘膜设置在所述氧化物半导体层位于所述栅电极附近的一侧，所述第二绝缘膜设置在所述一对源/漏电极附近的所述氧化物半导体层上。第一绝缘膜和第二绝缘膜中的一个或两个包括膜密度为2.70g / cm 3以上且小于2.79g / cm 3的氧化铝。

7. 发明申请

US20080266490A1 LIGHTING APPARATUS AND LIQUID CRYSTAL DISPLAY APPARATUS 审中-公开
标题翻译：照明装置和液晶显示装置
公开(公告)号：US20080266490A1
公开(公告)日：2008-10-30
申请号：US12108939
申请日：2008-04-24
申请人： Masahiko Mizuki , Eri Fukumoto
发明人： Masahiko Mizuki , Eri Fukumoto
IPC分类号： F21V1/00 , H01J1/62 , G02F1/1335
CPC分类号： G02F1/133603 , G02F1/133605 , G02F2001/133613 , H01L25/046 , H01L27/3293 , H01L2251/5323 , H01L2251/5361 , H01L2924/0002 , H01L2924/00
摘要： A lighting apparatus with a plurality of light emitting panels (for example, organic EL panels) arranged in a plane to form a light emitting panel layer (organic EL panel arrangement) and a plurality of such light emitting panel layers (light emitting panel layers) are laminated to form a light emitting panel lamination section. Organic EL panels of the single-sided light emitting type and organic EL panels of the double-sided light emitting type can be individually juxtaposed in a plane to form the organic EL panel arrangements which are laminated in a displaced relationship from each other.
摘要翻译：布置在平面上以形成发光面板层（有机EL面板装置）和多个这样的发光面板层（发光面板层）的多个发光面板（例如有机EL面板）的照明装置，层叠以形成发光面板层叠部。双面发光型单面发光型有机EL面板和双面发光型有机EL面板可以在平面内单独并列，形成以相互置换的方式层叠的有机EL面板装置。

8. 发明授权

US08486774B2 Thin film transistor and display device 有权
标题翻译：薄膜晶体管和显示装置
公开(公告)号：US08486774B2
公开(公告)日：2013-07-16
申请号：US13155118
申请日：2011-06-07
申请人： Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai
发明人： Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/3262 , H01L29/78606 , H01L29/78633 , H01L29/78648
摘要： A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.
摘要翻译：提供一种薄膜晶体管，其包括栅电极，源电极和漏电极，形成在栅电极上的氧化物半导体有源层，形成在氧化物半导体活性层的一部分上的固定电荷存储层，以及固定电荷控制电极形成在固定的电荷存储层上。

9. 发明申请

US20110309876A1 THIN FILM TRANSISTOR AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管和显示器件
公开(公告)号：US20110309876A1
公开(公告)日：2011-12-22
申请号：US13155118
申请日：2011-06-07
申请人： Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai
发明人： Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai
IPC分类号： H03K3/01 , H01L33/16 , H01L29/04 , H01L21/336 , B82Y40/00 , B82Y99/00
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/3262 , H01L29/78606 , H01L29/78633 , H01L29/78648
摘要： A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.
摘要翻译：提供一种薄膜晶体管，其包括栅电极，源电极和漏电极，形成在栅电极上的氧化物半导体有源层，形成在氧化物半导体活性层的一部分上的固定电荷存储层，以及固定电荷控制电极形成在固定的电荷存储层上。

10. 发明授权

US08748882B2 Thin film transistor, electronic device, display device, and method of manufacturing thin film transistor 有权
标题翻译：薄膜晶体管，电子器件，显示器件以及制造薄膜晶体管的方法
公开(公告)号：US08748882B2
公开(公告)日：2014-06-10
申请号：US13014363
申请日：2011-01-26
申请人： Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai , Narihiro Morosawa
发明人： Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai , Narihiro Morosawa
IPC分类号： H01L29/18 , H01L29/12
CPC分类号： H01L29/78606 , H01L29/12 , H01L29/7869
摘要： A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.
摘要翻译：提供薄膜晶体管。薄膜晶体管包括栅极，栅极绝缘膜和氧化物半导体膜，其中栅电极的至少一部分包括金属氧化物。除了制造方法之外，还提供了包括薄膜晶体管的电子装置和显示装置。

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