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1. 发明授权

US08976438B2 Display and electronic unit 有权
标题翻译：显示和电子单位
公开(公告)号：US08976438B2
公开(公告)日：2015-03-10
申请号：US13493624
申请日：2012-06-11
申请人： Toshiaki Arai , Yoshihiro Oshima
发明人： Toshiaki Arai , Yoshihiro Oshima
IPC分类号： G02F1/153 , G02F1/01 , G02B26/00 , H05B33/08 , H01L51/52 , H01L27/32 , H01L27/12
CPC分类号： H05B33/0857 , H01L27/1225 , H01L27/3232 , H01L27/3262 , H01L27/3265 , H01L51/5284 , H01L2251/5323
摘要： There are provided a display and an electronic unit capable of enhancing visibility. The display includes: a plurality of pixels each including a light-emission device, and having a light-transmission region in at least a part thereof; and one or more transmittance control devices capable of controlling a transmittance of incident light.
摘要翻译：提供了能够提高可视性的显示器和电子单元。显示器包括：多个像素，每个像素包括发光器件，并且在其至少一部分中具有光透射区域; 以及能够控制入射光的透射率的一个或多个透射率控制装置。

2. 发明授权

US08838768B2 Computer system and disk sharing method used thereby 有权
标题翻译：因此使用的计算机系统和磁盘共享方法
公开(公告)号：US08838768B2
公开(公告)日：2014-09-16
申请号：US13486530
申请日：2012-06-01
申请人： Ryo Hirana , Keisuke Hatasaki , Toshiaki Arai
发明人： Ryo Hirana , Keisuke Hatasaki , Toshiaki Arai
IPC分类号： G06F15/173 , G06F3/06 , G06F9/50
CPC分类号： G06F3/0604 , G06F3/0631 , G06F3/0664 , G06F3/067 , G06F9/5077
摘要： A first server including a local disk and a second server are logically partitioned by virtualization units. The first and second servers each have a storage controller LPAR with a local disk sharing function running thereon. The storage controller LPARs running on the first and second servers communicate with each other. When a disk I/O command issued by the second LPAR running on the second server is transferred to the local disk of the first server, the second LPAR reads data stored in the local disk or writes data thereto. In this way, the local disk is shared.
摘要翻译：包括本地磁盘和第二个服务器在内的第一台服务器由虚拟化单元进行逻辑分区。第一和第二服务器各自具有在其上运行的本地磁盘共享功能的存储控制器LPAR。在第一和第二服务器上运行的存储控制器LPAR彼此通信。当由在第二服务器上运行的第二LPAR发出的磁盘I / O命令被传送到第一服务器的本地磁盘时，第二LPAR读取存储在本地磁盘中的数据或向其写入数据。这样，本地磁盘是共享的。

3. 发明授权

US08748882B2 Thin film transistor, electronic device, display device, and method of manufacturing thin film transistor 有权
标题翻译：薄膜晶体管，电子器件，显示器件以及制造薄膜晶体管的方法
公开(公告)号：US08748882B2
公开(公告)日：2014-06-10
申请号：US13014363
申请日：2011-01-26
申请人： Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai , Narihiro Morosawa
发明人： Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai , Narihiro Morosawa
IPC分类号： H01L29/18 , H01L29/12
CPC分类号： H01L29/78606 , H01L29/12 , H01L29/7869
摘要： A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.
摘要翻译：提供薄膜晶体管。薄膜晶体管包括栅极，栅极绝缘膜和氧化物半导体膜，其中栅电极的至少一部分包括金属氧化物。除了制造方法之外，还提供了包括薄膜晶体管的电子装置和显示装置。

4. 发明授权

US08482008B2 Method of manufacturing thin film transistor, thin film transistor, and display unit 失效
标题翻译：制造薄膜晶体管，薄膜晶体管和显示单元的方法
公开(公告)号：US08482008B2
公开(公告)日：2013-07-09
申请号：US13444003
申请日：2012-04-11
申请人： Toshiaki Arai , Yoshio Inagaki
发明人： Toshiaki Arai , Yoshio Inagaki
IPC分类号： H01L29/04 , H01L31/20
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02667 , H01L21/02675 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L29/78678
摘要： A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.
摘要翻译：一种具有晶体硅膜的薄膜晶体管，其在绝缘基板上形成有栅电极和栅极绝缘膜，并且在对应于栅电极的区域中具有沟道区域; 绝缘通道保护膜，其选择性地形成在与晶体硅膜上的沟道区对应的区域中; 具有源极区域和漏极区域的n +硅膜，其夹着与沟道保护膜上的沟道区域对应的区域和晶体硅膜; 以及具有分别对应于源极区域和漏极区域的源极电极和漏极电极的金属膜。

5. 发明授权

US08461595B2 Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method 失效
标题翻译：通过该方法获得的制造半导体装置和半导体装置的方法，制造薄膜晶体管基板和薄膜晶体管基板的方法，以及通过该方法获得的制造显示装置和显示装置的方法
公开(公告)号：US08461595B2
公开(公告)日：2013-06-11
申请号：US13454141
申请日：2012-04-24
申请人： Naoki Hayashi , Toshiaki Arai
发明人： Naoki Hayashi , Toshiaki Arai
IPC分类号： H01L29/786
CPC分类号： H01L29/66765 , H01L27/1285 , H01L27/3244 , H01L29/4908
摘要： A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized.
摘要翻译：具有形成在基板上的基板和层叠结构的半导体装置，所述层叠结构包括由金属氧化物构成的绝缘膜和半导体薄膜，所述绝缘膜和所述半导体薄膜都被结晶化。

6. 发明授权

US08461594B2 Thin film transistor and display device 有权
标题翻译：薄膜晶体管和显示装置
公开(公告)号：US08461594B2
公开(公告)日：2013-06-11
申请号：US13122307
申请日：2009-10-07
申请人： Narihiro Morosawa , Yasuhiro Terai , Toshiaki Arai
发明人： Narihiro Morosawa , Yasuhiro Terai , Toshiaki Arai
IPC分类号： H01L29/04
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/3211 , H01L27/3244 , H01L27/3262
摘要： Provided are a thin film transistor that is capable of suppressing desorption of oxygen and others from an oxide semiconductor layer, and reducing the time to be taken for film formation, and a display device provided therewith. A gate insulation film 22, a channel protection layer 24, and a passivation film 26 are each in the laminate configuration including a first layer 31 made of aluminum oxide, and a second layer 32 made of an insulation material including silicon (Si). The first and second layers 31 and 32 are disposed one on the other so that the first layer 31 comes on the side of an oxide semiconductor layer 23. The oxide semiconductor layer 23 is sandwiched on both sides by the first layers 31 made of aluminum oxide, thereby suppressing desorption of oxygen and others, and stabilizing the electrical characteristics of a TFT 20. Moreover, since the second layer 32 is made of an insulation material including silicon (Si), the time to be taken for film formation can be reduced compared with a single layer made of aluminum oxide.
摘要翻译：提供一种薄膜晶体管，其能够抑制氧等氧化物半导体层的解吸，并减少成膜时间，以及具有该显示装置的显示装置。栅极绝缘膜22，沟道保护层24和钝化膜26均包括由氧化铝制成的第一层31和由包含硅（Si）的绝缘材料制成的第二层32。第一层31和第二层32彼此重叠设置，使得第一层31位于氧化物半导体层23的侧面。氧化物半导体层23由两个由氧化铝制成的第一层31夹在两侧，从而抑制氧等的解吸，并且稳定TFT20的电特性。此外，由于第二层32由包含硅（Si）的绝缘材料制成，因此可以减少用于成膜的时间，比较具有由氧化铝制成的单层。

7. 发明授权

US08426862B2 Thin film transistor substrate and display device 有权
标题翻译：薄膜晶体管基板和显示装置
公开(公告)号：US08426862B2
公开(公告)日：2013-04-23
申请号：US13550995
申请日：2012-07-17
申请人： Toshiaki Arai
发明人： Toshiaki Arai
IPC分类号： H01L29/04
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/3265
摘要： A thin film transistor substrate with reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate. The thin film transistor substrate includes: a substrate; a thin film transistor having, over the substrate, a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source-drain electrode in order; and a capacitor having, over the substrate, a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order.
摘要翻译：具有减小电容器中的层间短路缺陷的薄膜晶体管基板，以及具有薄膜晶体管基板的显示装置。薄膜晶体管基板包括：基板; 薄膜晶体管，其依次是在栅极电极，栅极绝缘膜，氧化物半导体层和源极 - 漏极电极之上; 以及在该基板上依次具有由氧化物半导体构成的底部电极，电容绝缘膜和顶部电极的电容器。

8. 发明申请

US20120327498A1 DISPLAY AND ELECTRONIC UNIT 有权
标题翻译：显示和电子单元
公开(公告)号：US20120327498A1
公开(公告)日：2012-12-27
申请号：US13493624
申请日：2012-06-11
申请人： Toshiaki Arai , Yoshihiro Oshima
发明人： Toshiaki Arai , Yoshihiro Oshima
IPC分类号： G02F1/15 , G02F1/19 , G02F1/17 , G02F1/01 , G02B26/02
CPC分类号： H05B33/0857 , H01L27/1225 , H01L27/3232 , H01L27/3262 , H01L27/3265 , H01L51/5284 , H01L2251/5323
摘要： There are provided a display and an electronic unit capable of enhancing visibility. The display includes: a plurality of pixels each including a light-emission device, and having a light-transmission region in at least a part thereof; and one or more transmittance control devices capable of controlling a transmittance of incident light.
摘要翻译：提供了能够提高可视性的显示器和电子单元。显示器包括：多个像素，每个像素包括发光器件，并且在其至少一部分中具有光透射区域; 以及能够控制入射光的透射率的一个或多个透射率控制装置。

9. 发明申请

US20120280241A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管基板和显示器件
公开(公告)号：US20120280241A1
公开(公告)日：2012-11-08
申请号：US13550995
申请日：2012-07-17
申请人： Toshiaki Arai
发明人： Toshiaki Arai
IPC分类号： H01L29/786 , H01L27/15
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/3265
摘要： A thin film transistor substrate with reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate. The thin film transistor substrate includes: a substrate; a thin film transistor having, over the substrate, a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source-drain electrode in order; and a capacitor having, over the substrate, a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order.
摘要翻译：具有减小电容器中的层间短路缺陷的薄膜晶体管基板，以及具有薄膜晶体管基板的显示装置。薄膜晶体管基板包括：基板; 薄膜晶体管，其依次是在栅极电极，栅极绝缘膜，氧化物半导体层和源极 - 漏极电极之上; 以及在该基板上依次具有由氧化物半导体构成的底部电极，电容绝缘膜和顶部电极的电容器。

10. 发明授权

US08269217B2 Display unit with thin film transistor having through holes in source/drain electrode 有权
标题翻译：具有薄膜晶体管的显示单元，源极/漏极具有通孔
公开(公告)号：US08269217B2
公开(公告)日：2012-09-18
申请号：US12696270
申请日：2010-01-29
申请人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga , Hiroshi Sagawa , Kiwamu Miura
发明人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga , Hiroshi Sagawa , Kiwamu Miura
IPC分类号： H01L29/10
CPC分类号： H01L27/3262 , H01L27/1225 , H01L29/41733 , H01L29/458 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L2251/5315
摘要： A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same are provided. The thin film transistor includes sequentially over a substrate a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.
摘要翻译：能够将氧容易地供给到氧化物半导体层的薄膜晶体管和良好的晶体管特性能够被恢复，并且提供包括该氧化物半导体层的显示单元。薄膜晶体管依次包括栅电极，栅极绝缘膜，包括沟道区的氧化物半导体层以及覆盖沟道区A的沟道保护层A源电极和漏极形成在氧化物半导体层上位于沟道保护层的两侧，并且源电极和漏电极中的至少一个具有露出氧化物半导体层的孔。

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