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1. 发明授权

US06576490B2 Method for micro-fabricating a pixelless infrared imaging device 失效
标题翻译：用于微型制造无像素红外成像装置的方法
公开(公告)号：US06576490B2
公开(公告)日：2003-06-10
申请号：US10014478
申请日：2001-12-14
申请人： Margaret Buchanan , Martin Byloos , Shen Chiu , Emmanuel Dupont , Mae Gao , Hui Chun Liu , Chun-ying Song
发明人： Margaret Buchanan , Martin Byloos , Shen Chiu , Emmanuel Dupont , Mae Gao , Hui Chun Liu , Chun-ying Song
IPC分类号： H01L2100
CPC分类号： H01L27/14694 , B82Y20/00 , H01L27/156 , H01L31/0304 , H01L31/035236 , Y02E10/544 , Y02P70/521
摘要： The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials. Therefore, it is possible using a same manufacturing equipment for producing a large variety of different imaging devices considerably reducing manufacturing costs.
摘要翻译：本发明涉及一种用于微型制造无像差热成像装置的方法。成像装置将所感测的二维M / FIR图像上变换为NIR中的二维图像，依赖于可见光谱。形成集成的QWIP-LED晶片的多个层在第一基板的表面上晶体生长。这些层包括蚀刻停止层，底部接触层，形成QWIP的多个层和LED以及顶部接触层。在QWIP-LED晶片的顶部，提供了诸如用于将入射的M / FIR光的至少一部分耦合到具有垂直于QWIP的量子阱的电场分量的模式的衍射光栅的光耦合器。在随后的处理步骤中，去除第一衬底和蚀刻停止层。通过改变制造步骤的顺序，省略一些步骤或使用不同的材料来制造各种不同的热成像装置。因此，可以使用相同的制造设备来生产大量不同的成像装置，从而大大降低制造成本。

2. 发明授权

US5432634A Electromagnetic wave modulator with quantum well structure 失效
标题翻译：具有量子阱结构的电磁波调制器
公开(公告)号：US5432634A
公开(公告)日：1995-07-11
申请号：US135338
申请日：1993-10-13
申请人： Emmanuel Dupont , Dominique Delacourt , Michel Papuchon
发明人： Emmanuel Dupont , Dominique Delacourt , Michel Papuchon
IPC分类号： G02F1/017 , H01L29/15 , G02F1/015
CPC分类号： B82Y20/00 , G02F1/01725 , H01L29/155 , G02F2001/01741 , G02F2001/01775
摘要： The invention pertains to an electromagnetic wave modulator comprising a quantum well semiconductor structure having two adjacent wells, the coupling of which is modified under the effect of an electrical field by the use of the phenomenon of anti-crossing of resonating levels. With this type of modulator, it is possible to attain 20% of modulation (as in the prior art) but with heightened sensitivity to the electrical field and a very short response time.
摘要翻译：本发明涉及一种电磁波调制器，其包括具有两个相邻阱的量子阱半导体结构，其耦合在电场的作用下通过使用谐振电平的反交叉现象进行修改。对于这种类型的调制器，可以实现20％的调制（如现有技术中那样），但对电场的灵敏度提高和响应时间非常短。

3. 发明授权

US06878900B2 Method and apparatus for repair of defects in materials with short laser pulses 失效
标题翻译：用短激光脉冲修复材料缺陷的方法和装置
公开(公告)号：US06878900B2
公开(公告)日：2005-04-12
申请号：US10182127
申请日：2001-01-25
申请人： Paul B. Corkum , Emmanuel Dupont , Hui Chun Liu , Xiaonong Zhu
发明人： Paul B. Corkum , Emmanuel Dupont , Hui Chun Liu , Xiaonong Zhu
IPC分类号： B23K26/03 , B23K26/06 , G03F1/00 , H01L21/768 , B23K26/38
CPC分类号： H01L21/76894 , B23K26/032 , B23K26/0624 , B23K2103/10 , G03F1/72
摘要： A method of accurately and precisely providing desired functionality to an electronic or opto-electronic component is disclosed in which a Femtosecond laser pulse is used to ablate material from a surface of or from within a component. The component is in active operation during the ablation process in order to facilitate the ablation process. The process also involves detection and feedback to indicate when a repair is sufficiently complete. The detection is also performed while the component is powered allowing in-situ detection and ablation. Of course, forms of facilitation other than feedback such as monitoring are also applicable to the invention.
摘要翻译：公开了一种准确且精确地向电子或光电子部件提供期望的功能的方法，其中使用飞秒激光脉冲来从组件的表面或从组件的表面烧蚀材料。组件在消融过程中处于主动操作，以便于消融过程。该过程还涉及检测和反馈以指示修复何时足够完整。在组件通电的同时也进行检测，从而允许原位检测和消融。当然，除了诸如监视之类的反馈之外，辅助形式也适用于本发明。

4. 发明授权

US06750072B2 Method for micro-fabricating a pixelless infrared imaging device 失效
标题翻译：用于微型制造无像素红外成像装置的方法
公开(公告)号：US06750072B2
公开(公告)日：2004-06-15
申请号：US10407466
申请日：2003-04-07
申请人： Margaret Buchanan , Martin Byloos , Shen Chiu , Emmanuel Dupont , Mae Gao , Hui Chun Liu , Chun-ying Song
发明人： Margaret Buchanan , Martin Byloos , Shen Chiu , Emmanuel Dupont , Mae Gao , Hui Chun Liu , Chun-ying Song
IPC分类号： H01L2100
CPC分类号： H01L27/14694 , B82Y20/00 , H01L27/156 , H01L31/0304 , H01L31/035236 , Y02E10/544 , Y02P70/521
摘要： The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials. Therefore, it is possible using a same manufacturing equipment for producing a large variety of different imaging devices considerably reducing manufacturing costs.
摘要翻译：本发明涉及一种用于微型制造无像差热成像装置的方法。成像装置将所感测的二维M / FIR图像上变换为NIR中的二维图像，依赖于可见光谱。形成集成的QWIP-LED晶片的多个层在第一基板的表面上晶体生长。这些层包括蚀刻停止层，底部接触层，形成QWIP的多个层和LED以及顶部接触层。在QWIP-LED晶片的顶部，提供了诸如用于将入射的M / FIR光的至少一部分耦合到具有垂直于QWIP的量子阱的电场分量的模式的衍射光栅的光耦合器。在随后的处理步骤中，去除第一衬底和蚀刻停止层。通过改变制造步骤的顺序，省略一些步骤或使用不同的材料来制造各种不同的热成像装置。因此，可以使用相同的制造设备来生产大量不同的成像装置，从而大大降低制造成本。

5. 发明授权

US5249075A Quantum well wave modulator and optical detector 失效
标题翻译：量子阱波形调制器和光学检测器
公开(公告)号：US5249075A
公开(公告)日：1993-09-28
申请号：US873193
申请日：1992-04-24
申请人： Dominique Delacourt , Michel Papuchon , Emmanuel Dupont , Nakita Vojdani
发明人： Dominique Delacourt , Michel Papuchon , Emmanuel Dupont , Nakita Vojdani
IPC分类号： G02F1/017 , G02F3/00 , H01L31/0352
CPC分类号： B82Y20/00 , G02F1/01725 , H01L31/035236 , G02F1/01716 , G02F2001/01733 , G02F3/00
摘要： A quantum well wave modulator comprises a central well sandwiched by two lateral wells. The central well is populated with electrons and the two lateral wells, having different constitutions, are coupled to the central well so as to modulate two light waves under the effect of the application of an electrical field perpendicularly to the structure in one direction or in the opposite direction.
摘要翻译：量子阱波调制器包括由两个侧向井夹持的中心阱。中心井由电子填充，并且具有不同构造的两个侧向阱耦合到中心阱，以便在垂直于结构在一个方向上施加电场或在一个方向上的电场的作用下调制两个光波相反的方向。

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