会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明申请
    • OPTICAL SEMICONDUCTOR ELEMENT UTILIZING OPTICAL TRANSITION BETWEEN ZNO HETEROSTRUCTURE SUB-BANDS
    • 光学半导体元件利用ZNO结构子带之间的光学转换
    • US20040173883A1
    • 2004-09-09
    • US10451378
    • 2004-05-12
    • Hideo OhnoMasashi KawasakiKeita Ohtani
    • H01L023/495
    • H01L33/28B82Y20/00G02F1/017G02F1/01716G02F1/01725G02F2001/01775H01L31/035236H01L33/06H01S5/3402H01S5/3419H01S5/347
    • Disclosed is an optical semiconductor device which has a quantum well structure comprising a quantum well made of a zinc oxide or a zinc oxide mixed crystal thin film, and utilizes optical transitions between subbands in the quantum well structure. An element of this device can be formed as a film on a transparent substrate or a plastic substrate at a temperature of 200null C. or lower. The quantum well structure includes a barrier layer made of an insulating material such as ZnMgO; a homologous compound expressed by the following general formula: RMO3(AO)m, wherein RnullSc or In, MnullIn, Fe, Cr, Ga or Al, AnullZn, Mg, Cu, Mn, Fe, Co, Ni or Cd, and mnulla natural number; or (Li, Na)(Ga, Al)O2. The optical semiconductor device is capable of using a transparent or plastic substrate as its substrate, and achieving a high-efficient wide-band light-emitting or receiving device and an ultrafast optical moderation or switching applicable to an optical communication system requiring one terabit/sec or more of data transmission speed.
    • 公开了一种具有量子阱结构的光学半导体器件,该量子阱结构包括由氧化锌或氧化锌混合晶体薄膜制成的量子阱,并利用量子阱结构中的子带之间的光学跃迁。 该装置的元件可以在200℃以下的温度下在透明基板或塑料基板上形成为膜。 量子阱结构包括由绝缘材料如ZnMgO制成的阻挡层; 由以下通式表示的同源化合物:RMO3(AO)m,其中R = Sc或In,M = In,Fe,Cr,Ga或Al,A = Zn,Mg,Cu,Mn,Fe,Co,Ni 或Cd,m =自然数; 或(Li,Na)(Ga,Al)O 2。 光学半导体器件能够使用透明或塑料基板作为其基板,并且实现高效宽带发光或接收装置和适用于需要一兆比特/秒的光通信系统的超快光学调节或切换 或更多的数据传输速度。
    • 10. 发明授权
    • Quantum well infrared filter
    • 量子阱红外滤光片
    • US5543628A
    • 1996-08-06
    • US289727
    • 1994-08-12
    • David H. ChowColin G. Whitney
    • David H. ChowColin G. Whitney
    • G02B5/20G02B5/22G02F1/015G02F1/017H01L29/161H01L29/205
    • B82Y20/00G02F1/017G02F1/01716G02F2001/01775
    • A controllable infrared filter (22) includes a quantum well filter unit (24) operable to absorb infrared energy at a selected wavelength. The quantum well filter unit (24) has a quantum well layer (26) made of an infrared transparent semiconductor mate rial and a barrier layer (28, 32) of another infrared transparent semiconductor material epitaxially deposited on each side of the quantum well layer (26). There is structure for controllably introducing charge carriers into the quantum well layer (26), which may utilize a source of electrons from other semi conductor layers (36, 38) and an applied voltage, or may utilize a laser (76) that generates charge carriers in the quantum well layer (26). The filter (22) further includes a lens (44, 46) or other optical system for directing infrared radiation through the first barrier layer (28), the quantum well layer (24), and the second barrier layer (32). Fixed band pass optical filters may be used in conjunction with the controllable quantum well filters.
    • 可控红外滤光器(22)包括可操作以吸收所选波长的红外能量的量子阱滤波器单元(24)。 量子阱滤波器单元(24)具有由红外线透明半导体材料制成的量子阱层(26)和外延沉积在量子阱层的每一侧上的另一个红外透明半导体材料的阻挡层(28,32) 26)。 存在用于可控地将电荷载流子引入量子阱层(26)的结构,其可以利用来自其它半导体层(36,38)的电子源和施加的电压,或者可以利用产生电荷的激光器(76) 量子阱层(26)中的载流子。 过滤器(22)还包括用于引导红外辐射穿过第一阻挡层(28),量子阱层(24)和第二阻挡层(32)的透镜(44,46)或其它光学系统。 固定带通光学滤波器可与可控量子阱滤波器结合使用。