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1. 发明授权

US06576490B2 Method for micro-fabricating a pixelless infrared imaging device 失效
标题翻译：用于微型制造无像素红外成像装置的方法
公开(公告)号：US06576490B2
公开(公告)日：2003-06-10
申请号：US10014478
申请日：2001-12-14
申请人： Margaret Buchanan , Martin Byloos , Shen Chiu , Emmanuel Dupont , Mae Gao , Hui Chun Liu , Chun-ying Song
发明人： Margaret Buchanan , Martin Byloos , Shen Chiu , Emmanuel Dupont , Mae Gao , Hui Chun Liu , Chun-ying Song
IPC分类号： H01L2100
CPC分类号： H01L27/14694 , B82Y20/00 , H01L27/156 , H01L31/0304 , H01L31/035236 , Y02E10/544 , Y02P70/521
摘要： The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials. Therefore, it is possible using a same manufacturing equipment for producing a large variety of different imaging devices considerably reducing manufacturing costs.
摘要翻译：本发明涉及一种用于微型制造无像差热成像装置的方法。成像装置将所感测的二维M / FIR图像上变换为NIR中的二维图像，依赖于可见光谱。形成集成的QWIP-LED晶片的多个层在第一基板的表面上晶体生长。这些层包括蚀刻停止层，底部接触层，形成QWIP的多个层和LED以及顶部接触层。在QWIP-LED晶片的顶部，提供了诸如用于将入射的M / FIR光的至少一部分耦合到具有垂直于QWIP的量子阱的电场分量的模式的衍射光栅的光耦合器。在随后的处理步骤中，去除第一衬底和蚀刻停止层。通过改变制造步骤的顺序，省略一些步骤或使用不同的材料来制造各种不同的热成像装置。因此，可以使用相同的制造设备来生产大量不同的成像装置，从而大大降低制造成本。

2. 发明授权

US06750072B2 Method for micro-fabricating a pixelless infrared imaging device 失效
标题翻译：用于微型制造无像素红外成像装置的方法
公开(公告)号：US06750072B2
公开(公告)日：2004-06-15
申请号：US10407466
申请日：2003-04-07
申请人： Margaret Buchanan , Martin Byloos , Shen Chiu , Emmanuel Dupont , Mae Gao , Hui Chun Liu , Chun-ying Song
发明人： Margaret Buchanan , Martin Byloos , Shen Chiu , Emmanuel Dupont , Mae Gao , Hui Chun Liu , Chun-ying Song
IPC分类号： H01L2100
CPC分类号： H01L27/14694 , B82Y20/00 , H01L27/156 , H01L31/0304 , H01L31/035236 , Y02E10/544 , Y02P70/521
摘要： The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials. Therefore, it is possible using a same manufacturing equipment for producing a large variety of different imaging devices considerably reducing manufacturing costs.
摘要翻译：本发明涉及一种用于微型制造无像差热成像装置的方法。成像装置将所感测的二维M / FIR图像上变换为NIR中的二维图像，依赖于可见光谱。形成集成的QWIP-LED晶片的多个层在第一基板的表面上晶体生长。这些层包括蚀刻停止层，底部接触层，形成QWIP的多个层和LED以及顶部接触层。在QWIP-LED晶片的顶部，提供了诸如用于将入射的M / FIR光的至少一部分耦合到具有垂直于QWIP的量子阱的电场分量的模式的衍射光栅的光耦合器。在随后的处理步骤中，去除第一衬底和蚀刻停止层。通过改变制造步骤的顺序，省略一些步骤或使用不同的材料来制造各种不同的热成像装置。因此，可以使用相同的制造设备来生产大量不同的成像装置，从而大大降低制造成本。

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