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1. 发明授权

US6163554A Optical fiber raman laser 失效
标题翻译：光纤拉曼激光
公开(公告)号：US6163554A
公开(公告)日：2000-12-19
申请号：US162568
申请日：1998-09-29
申请人： Do IL Chang , Ho Young Kim , El Hang Lee
发明人： Do IL Chang , Ho Young Kim , El Hang Lee
IPC分类号： G02B6/44 , H01S3/067 , H01S3/30
CPC分类号： H01S3/302 , H01S3/0675
摘要： An optical fiber Raman laser includes an optical fiber which is a nonlinear optical medium, for implementing a nonlinear Stokes frequency shift; a wavelength-division multiplexing optical fiber coupler means, coupled to said optical fiber in parallel, for separating each Stokes frequency shifted wavelengths and pump wavelength, for internally resonating the Stokes frequency shited light wavelengths and for output-coupling said laser output light which is a second order Stokes frequency shifted wavelength; a first fiber Bragg grating means connected to said wavelength division multiplexing (WDM) optical fiber coupler means in serial, for transmitting light of the pump source and for selecting output wave of the Raman laser; and a second fiber Bragg grating means connected to said wavelength division multiplexing (WDM) optical fiber coupler means, which has maximum reflectivity on the wavelength of the pump source, for full-reflecting and re-inputting the light of the pump source to said optical fiber.
摘要翻译：一种光纤拉曼激光器包括一种用于实现非线性斯托克斯频移的非线性光学介质的光纤; 并联耦合到所述光纤的波分复用光纤耦合器装置，用于分离每个斯托克斯频移波长和泵波长，用于使斯托克斯频率光束波长内部谐振，并输出耦合所述激光输出光二阶斯托克斯频移波长; 串联连接到所述波分复用（WDM）光纤耦合器装置的第一光纤布喇格光栅装置，用于透射泵浦光的光并选择拉曼激光的输出波; 以及连接到所述波分复用（WDM）光纤耦合器装置的第二光纤布拉格光栅装置，其对泵浦源的波长具有最大反射率，用于将泵浦光的光全反射和重新输入到所述光纤维。

2. 发明授权

US6033972A Growing method of GaAs quantum dots using chemical beam epitaxy 有权
标题翻译：使用化学束外延的GaAs量子点的生长方法
公开(公告)号：US6033972A
公开(公告)日：2000-03-07
申请号：US135124
申请日：1998-08-17
申请人： Jeong Rae Ro , Sung Bock Kim , El Hang Lee
发明人： Jeong Rae Ro , Sung Bock Kim , El Hang Lee
IPC分类号： H01L21/20 , H01L21/205 , H01L21/208
CPC分类号： B82Y30/00 , B82Y10/00 , H01L21/02395 , H01L21/02463 , H01L21/02502 , H01L21/02546 , H01L21/0262 , H01L21/02631 , Y10S438/962
摘要： The formation of self-assembled GaAs quantum dots on (100) GaAs via chemical beam epitaxy (CBE) technique using triethylgallium (TEGa) and arsine (AsH.sub.3) is disclosed. GaAs quantum dots are easy to grow from Ga-droplets which are successively supplied with arsine with neither pattern definition nor pre-treatment steps prior to the growth. The density and the size of Ga-droplets are found to be sensitive to the growth conditions, such as the growth temperature, the beam equivalent pressure of TEGa, and the amount of TEGa supplied. This invention suggests that, unlike Stranski-Krastanow growth, the Ga-droplet-induced CBE technique can be a useful method for the fabrication of quantum dot structure by simple change of gas supply mode, even in lattice-matched system.
摘要翻译：公开了通过使用三乙基镓（TEGa）和胂（AsH 3）的化学束外延（CBE）技术在（100）GaAs上自组装GaAs量子点的形成。 GaAs量子点容易从Ga液滴中生长，其连续地供应胂，既没有图案定义也没有在生长之前的预处理步骤。发现Ga液滴的密度和尺寸对生长条件如生长温度，TEGa的束当量压力和所提供的TEGa的量是敏感的。本发明表明，与Stranski-Krastanow生长不同，Ga液滴诱导的CBE技术可以通过气体供应模式的简单改变来制造量子点结构的有用方法，即使在晶格匹配系统中也是如此。

3. 发明授权

US5833870A Method for forming a high density quantum wire 失效
标题翻译：形成高密度量子线的方法
公开(公告)号：US5833870A
公开(公告)日：1998-11-10
申请号：US833047
申请日：1997-04-03
申请人： Sung Bock Kim , Jeong Rae Ro , El Hang Lee
发明人： Sung Bock Kim , Jeong Rae Ro , El Hang Lee
IPC分类号： H01L33/00 , H01L21/20 , H01L21/205 , H01L21/335 , H01L29/12 , H01L21/00
CPC分类号： B82Y10/00 , H01L21/02439 , H01L21/02543 , H01L21/02546 , H01L21/02639 , H01L29/125 , H01L29/66469
摘要： A method for forming a highly dense quantum wire, the method comprising the steps of: depositing a dielectric mask having dielectric patterns on the top surface of a semiconductor (100) substrate; forming the dielectric patterns in parallel to a (011) orientation on the semiconductor substrate; exposing a (111)B side and a(111)B side by chemical etching a selected region between the patterns so that the semiconductor substrate has a dove-tail shape; forming a buffer layer on the dove-tail semiconductor substrate; forming the first barrier layer on the buffer layer; forming a well layer on the first barrier layer; and forming the second barrier layer on the well layer.
摘要翻译：一种用于形成高密度量子线的方法，所述方法包括以下步骤：在半导体（100）衬底的顶表面上沉积具有电介质图案的电介质掩模; 在半导体衬底上形成平行于（011）取向的电介质图案; 通过化学蚀刻图案之间的选定区域来暴露（1 + E，ov 1 + EE 1）B侧和（11 + E，ov 1 + EE）B侧，使得半导体衬底具有鸽尾形状; 在鸽尾半导体衬底上形成缓冲层; 在缓冲层上形成第一阻挡层; 在所述第一阻挡层上形成阱层; 以及在所述阱层上形成所述第二阻挡层。

4. 发明授权

US6160627A Optical fiber Mach-Zehnder interferometer filter 失效
标题翻译：光纤马赫 - 曾德尔干涉仪滤波器
公开(公告)号：US6160627A
公开(公告)日：2000-12-12
申请号：US315998
申请日：1999-05-21
申请人： Joon Tae Ahn , Hak Kyu Lee , Min Yong Jeon , Dong Sung Lim , Kyong Hon Kim , El Hang Lee
发明人： Joon Tae Ahn , Hak Kyu Lee , Min Yong Jeon , Dong Sung Lim , Kyong Hon Kim , El Hang Lee
IPC分类号： G02B6/34 , G01B9/02
CPC分类号： G02B6/29353
摘要： An optical fiber Mach-Zehnder interferometer optical filter is disclosed. The filter includes a stabilization light source for varying a first wavelength of a light signal for stabilizing a Mach-Zehnder interferometer, first and second optical fiber couplers for receiving an optical signal from the stabilization light source and an optical signal of a second wavelength different from a first wavelength inputted from an input port and dividing into two parts having the same intensity for thereby forming a Mach-Zehnder interferometer, a polarization controller connected with one side of the first optical fiber coupler for controlling a polarization of the interfered light of the interferometer, first and second wavelength division multiplex optical couplers connected with the second optical fiber coupler for separately outputting a first wavelength optical signal and a second wavelength optical signal, an optical fiber phase modulator connected with the other side of the first optical fiber coupler for varying the length of the optical fiber in accordance with a fed-back phase difference, and a stabilization circuit for receiving two optical signals of the first wavelength from the first and second wavelength division multiplex optical couplers and feeding back the phase difference to the optical fiber phase modulator for thereby implementing a constant optical path difference of the interferometer.
摘要翻译：公开了一种光纤马赫 - 曾德干涉仪滤光器。滤光器包括用于改变用于稳定马赫 - 曾德干涉仪的光信号的第一波长的稳定光源，用于从稳定光源接收光信号的第一和第二光纤耦合器以及不同于从输入端口输入的第一波长并分成具有相同强度的两个部分，从而形成马赫 - 策德尔干涉仪;偏振控制器，与第一光纤耦合器的一侧连接，用于控制干涉仪的干涉光的偏振与第二光纤耦合器连接的第一和第二波分复用光耦合器，用于分别输出第一波长光信号和第二波长光信号;光纤相位调制器，与第一光纤耦合器的另一侧连接，用于改变根据光纤的长度反馈相位差，以及稳定电路，用于从第一和第二波分复用光耦合器接收第一波长的两个光信号，并将相位差反馈到光纤相位调制器，从而实现恒定的光程差的干涉仪。

5. 发明授权

US5812567A Wavelength tunable mode-locking optical fiber laser 失效
标题翻译：波长可调模式锁定光纤激光器
公开(公告)号：US5812567A
公开(公告)日：1998-09-22
申请号：US794907
申请日：1997-02-04
申请人： Min Yong Jeon , Hak Kyu Lee , Kyong Hon Kim , El Hang Lee
发明人： Min Yong Jeon , Hak Kyu Lee , Kyong Hon Kim , El Hang Lee
IPC分类号： H01S3/098 , H01S3/067 , H01S3/13
CPC分类号： H01S3/067 , H01S3/06791 , H01S3/1068 , H01S3/1109
摘要： The wavelength tunable mode-locking optical fiber laser comprises non-linear amplifying loop mirror part having a light pumping lase diode, a gain medium doped optical fiber having the gain medium for oscillating the rambling light wave sequentially, a dispersion shifted optical fiber, and first polarization controller for making the continuous oscillation light wave to be maximized by adjusting the polarization of said propagating light. All elements of the non-linear amplifying loop mirror part are combined to each other in loop type on the above clock direction., and linear mirror part having second polarization controller for adjusting the light wave oscillated by the non-linear amplifying loop mirror part to be mode-locked, Faraday rotation mirror for rotating the direction of polarization with degree, an acousto-optic tunable filter for changing the wavelength of the propagating light wave and for passing only the light wave with the defined linewidth, an optical isolator, and the 90:10 optical fiber directional coupler.
摘要翻译：波长可调模式锁定光纤激光器包括具有光泵浦二极管的非线性放大环路镜部分，具有用于顺序振荡漫射光波的增益介质的增益介质掺杂光纤，色散位移光纤和第一偏振控制器，用于通过调节所述传播光的偏振使连续振荡光波最大化。非线性放大环路镜部分的所有元件在上述时钟方向上以环路类型彼此组合，并且具有第二偏振控制器的线性反射镜部分用于将由非线性放大环形镜部分振荡的光波调整到用于旋转偏振方向的法拉第旋转镜，用于改变传播光波的波长并且仅通过具有限定的线宽的光波的声光可调谐滤光器，光隔离器，以及 90:10光纤定向耦合器。

6. 发明授权

US6115375A Multistage optical packet switching apparatus using self electro-optic-effect devices 失效
标题翻译：使用自电光效应器件的多级光分组交换设备
公开(公告)号：US6115375A
公开(公告)日：2000-09-05
申请号：US967797
申请日：1997-11-10
申请人： Kwang Joon Kim , O Kyun Kwon , Kyung Sook Hyun , Seok Ho Song , El Hang Lee
发明人： Kwang Joon Kim , O Kyun Kwon , Kyung Sook Hyun , Seok Ho Song , El Hang Lee
IPC分类号： H04B10/00 , H04Q11/00 , H04L12/50
CPC分类号： H04Q11/0003 , H04Q11/0005 , H04Q2011/0035
摘要： A multistage optical packet switching apparatus with self electro-optic-effect device is disclosed. The apparatus is formed with multistage structure using a plurality of symmetrical self electro-optic-effect devices, self-routing being performed by the control for a header part of optical packets after self-duplication and amplification for the input optical signal. The optical packet switching apparatus using a plurality of symmetrical self electro-optic-effect devices includes a front stage having first and second self electro-optic-effect devices interconnected and a back stage having third and fourth self electro-optic-effect devices interconnected, the 1.quadrature. multistage structure comprising the unit switching modules interconnected each comprising the front and the back stages, the self-duplication and amplification being performed in the front stage and the switching being performed in the back stage. The use of the apparatus is an optical exchange.
摘要翻译：公开了具有自电光效应装置的多级光分组交换装置。该装置使用多个对称的自电光效应装置形成多级结构，通过对输入光信号的自复制和放大之后的光分组的标题部分的控制执行自路由。使用多个对称的自电光效应装置的光分组交换装置包括具有互连的第一和第二自电光效应装置的前级和具有互连的第三和第四自电光效应装置的后级，包括各自包括前级和后级的单元切换模块的1＆amp;多级结构，在前级执行自复制和放大，并且在后级执行切换。该装置的使用是光交换。

7. 发明授权

US6074936A Method of fabricating a quantum device 失效
标题翻译：制造量子器件的方法
公开(公告)号：US6074936A
公开(公告)日：2000-06-13
申请号：US93195
申请日：1998-06-08
申请人： Jeong Rae Ro , Sung Bock Kim , El Hang Lee
发明人： Jeong Rae Ro , Sung Bock Kim , El Hang Lee
IPC分类号： H01L21/30 , H01L21/20 , H01L21/205 , H01L21/311 , H01L21/36 , H01L21/00
CPC分类号： B82Y10/00 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02639 , H01L21/31116 , Y10S438/962
摘要： A method of fabricating quantum wire structures and devices, and quantum dot structures and devices comprise steps of: depositing an insulating layer on a semiconductor substrate, forming a line patterns and a square patterns in an insulating layer, forming a V-grooved patterned structures and a reverse quadrilateral pyramid patterned structures by thermal etching to evaporate portions of the quantum well layer that are not protected by line-shaped mask regions and square-shaped mask regions of the masking layer, forming a quantum wires and a quantum dots by alternatively growing a barrier layer and an active layer on a V-grooved patterned substrate and a reverse quadrilateral pyramid patterned substrate.
摘要翻译：一种制造量子线结构和器件的方法，以及量子点结构和器件包括以下步骤：在半导体衬底上沉积绝缘层，在绝缘层中形成线图案和方形图案，形成V形槽图案结构和通过热蚀刻将反向四边形金字塔图案化的结构蒸发成量子阱层的未被掩模层的线状掩模区域和方形掩模区域保护的部分，通过交替生长形成量子线和量子点阻挡层和V沟槽图案化衬底上的有源层和反向四边形金字塔图案化衬底。

8. 发明授权

US6055345A Multi-wavelength channel transmission-type optical filter 失效
标题翻译：多波长通道传输型滤光片
公开(公告)号：US6055345A
公开(公告)日：2000-04-25
申请号：US132432
申请日：1998-08-11
申请人： Joon Tae Ahn , Hak Kyu Lee , Kyong Hon Kim , El Hang Lee
发明人： Joon Tae Ahn , Hak Kyu Lee , Kyong Hon Kim , El Hang Lee
IPC分类号： G02F1/1335 , G02B6/34 , G02B6/28
CPC分类号： G02B6/29352
摘要： The present invention provides a multi-wavelength channel transmission-type optical filter that is capable of more narrowing the bandwidth of transmission wavelength in a transmission type optical filter using Mach-Zehnder interferometer. The multi-wavelength channel transmission-type optical filter including a first optical fiber coupler for dividing a broadband light source into two lights, an optical fiber length and optical fiber length controlling unit for controlling the gap of transmission wavelength in which each receives as inputs the above lights divided by the first optical fiber coupler, a second optical fiber coupler for outputting each of the above lights, which are passed through the optical fiber length controlling unit and the optical fiber length, and an optical isolator for narrowing the width of transmission wavelength by connecting the two outputs of the second optical fiber coupler, thereby improving a wavelength selecting characteristics.
摘要翻译：本发明提供一种多波长信道传输型滤光器，其能够使用马赫 - 策德尔（Mach-Zehnder）干涉仪在透射型光学滤波器中使传输波长的带宽变窄。多波长通道透射型光学滤波器，包括用于将宽带光源分为两个光的第一光纤耦合器，用于控制传输波长的间隙的光纤长度和光纤长度控制单元，上述光由第一光纤耦合器分开，第二光纤耦合器，用于输出通过光纤长度控制单元和光纤长度的上述每个光;以及光隔离器，用于缩小透射波长的宽度通过连接第二光纤耦合器的两个输出，从而提高波长选择特性。

9. 发明授权

US06343090B1 Single mode surface emitting laser 有权
标题翻译：单模表面发射激光器
公开(公告)号：US06343090B1
公开(公告)日：2002-01-29
申请号：US09141794
申请日：1998-08-28
申请人： Byueng Su Yoo , Hye Yong Chu , Hyo Hoon Park , Kyung Sook Hyun , El Hang Lee
发明人： Byueng Su Yoo , Hye Yong Chu , Hyo Hoon Park , Kyung Sook Hyun , El Hang Lee
IPC分类号： H10S308
CPC分类号： H01S5/18388 , H01S5/0425 , H01S5/18308 , H01S5/205 , H01S2301/166 , H01S2301/176
摘要： A single mode surface emitting laser and its manufacturing method are provided. The surface emitting laser which has a characteristic of single transverse mode radiation in the broad region using reflectivity distribution of a reflector layer with an antiguide clad is provided. The single mode surface emitting laser comprises an n-type semiconductor substrate having an n-type lower electrode and an antireflection film thereunder, a laser pillar formed on the semiconductor substrate, the laser pillar having a bottom DBR, an active layer and a top DBR, a control layer formed on said laser pillar, the control layer consisting of a compound semiconductor of which energy gap is larger than radiation wavelength, an antiguide clad layer covering an outer portion of the laser pillar including the control layer and has higher reflective index than those of the active layer or the top DBR forming the laser pillar, a top electrode formed on the antiguide clad layer and the control layer, and an insulation film between the antiguide clad layer and the top electrode.
摘要翻译：提供单模表面发射激光器及其制造方法。提供了具有使用具有防反射层的反射层的反射率分布的广域中具有单横模辐射特性的表面发射激光器。单模面发光激光器包括在其上具有n型下电极和抗反射膜的n型半导体衬底，形成在半导体衬底上的激光柱，具有底部DBR的激光柱，有源层和顶部DBR 形成在所述激光柱上的控制层，所述控制层由能隙大于辐射波长的化合物半导体构成，覆盖所述控制层的所述激光柱的外部的反射覆盖层具有比所述控制层更高的反射指数形成激光柱的有源层或顶部DBR，形成在防反射覆层和控制层上的顶部电极，以及在防反射覆盖层和顶部电极之间的绝缘膜。

10. 发明授权

US06242275B1 Method for manufacturing quantum wires 有权
标题翻译：量子线制造方法
公开(公告)号：US06242275B1
公开(公告)日：2001-06-05
申请号：US09137617
申请日：1998-08-21
申请人： Sung Bock Kim , Jeong Rae Ro , El Hang Lee
发明人： Sung Bock Kim , Jeong Rae Ro , El Hang Lee
IPC分类号： H01L2120
CPC分类号： B82Y10/00 , H01L21/02395 , H01L21/02463 , H01L21/02494 , H01L21/02507 , H01L21/02546 , H01L21/0259 , H01L21/02609 , H01L29/125 , Y10S438/962
摘要： A method for manufacturing quantum wires is provided in which a stacked structure having AlAs layers and GaAs layers alternatively is formed, V-grooves are formed beside the GaAs layers and the quantum wires are formed using the V-grooves. The method for manufacturing quantum wires, which method includes the following steps: growing a GaAs buffer layer on the facet (011) of a GaAs single crystal substrate; growing an AlAs layer for using as oxide mask and a GaAs layer for a V-groove alternatively on the GaAs buffer layer so that each GaAs layer is stacked between an AlAs layer and an adjacent AlAs layer; growing the cover layer of GaAs on the AlAs layer which is grown as the top layer of the structure; cutting the entire structure including the GaAs cover layer to the perpendicular direction of (011), whose structure is grown in the orientation of (011) entirely, so as to expose the facet (100); performing a heat treatment for the entire structure cut to expose the facet (100) and forming oxide film on the exposed portion of each AlAs layer; etching each exposed GaAs layer chemically using the oxide as mask and forming V-groove so that the facet (111) of GaAs layer is exposed; and growing the quantum wire in the V-groove.
摘要翻译：提供一种制造量子线的方法，其中形成具有AlAs层和GaAs层的堆叠结构，在GaAs层旁边形成V沟槽，并且使用V形槽形成量子线。制造量子线的方法，该方法包括以下步骤：在GaAs单晶衬底的面（011）上生长GaAs缓冲层; 在GaAs缓冲层上生长用作氧化物掩模和用于V沟槽的GaAs层的AlAs层，使得每个GaAs层堆叠在AlAs层和相邻的AlAs层之间; 在作为结构的顶层生长的AlAs层上生长GaAs覆盖层; 将包括GaAs覆盖层的整个结构切割成（011）的垂直方向，其结构全部沿着（011）的取向生长，从而露出小面（100）。对整个结构进行热处理以暴露小面（100）并在每个AlAs层的暴露部分上形成氧化物膜; 使用氧化物作为掩模化学地蚀刻每个暴露的GaAs层并形成V形槽，使得GaAs层的面（111）暴露; 并在V槽中生长量子线。

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