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1. 发明授权

US6074936A Method of fabricating a quantum device 失效
标题翻译：制造量子器件的方法
公开(公告)号：US6074936A
公开(公告)日：2000-06-13
申请号：US93195
申请日：1998-06-08
申请人： Jeong Rae Ro , Sung Bock Kim , El Hang Lee
发明人： Jeong Rae Ro , Sung Bock Kim , El Hang Lee
IPC分类号： H01L21/30 , H01L21/20 , H01L21/205 , H01L21/311 , H01L21/36 , H01L21/00
CPC分类号： B82Y10/00 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02639 , H01L21/31116 , Y10S438/962
摘要： A method of fabricating quantum wire structures and devices, and quantum dot structures and devices comprise steps of: depositing an insulating layer on a semiconductor substrate, forming a line patterns and a square patterns in an insulating layer, forming a V-grooved patterned structures and a reverse quadrilateral pyramid patterned structures by thermal etching to evaporate portions of the quantum well layer that are not protected by line-shaped mask regions and square-shaped mask regions of the masking layer, forming a quantum wires and a quantum dots by alternatively growing a barrier layer and an active layer on a V-grooved patterned substrate and a reverse quadrilateral pyramid patterned substrate.
摘要翻译：一种制造量子线结构和器件的方法，以及量子点结构和器件包括以下步骤：在半导体衬底上沉积绝缘层，在绝缘层中形成线图案和方形图案，形成V形槽图案结构和通过热蚀刻将反向四边形金字塔图案化的结构蒸发成量子阱层的未被掩模层的线状掩模区域和方形掩模区域保护的部分，通过交替生长形成量子线和量子点阻挡层和V沟槽图案化衬底上的有源层和反向四边形金字塔图案化衬底。

2. 发明授权

US06242275B1 Method for manufacturing quantum wires 有权
标题翻译：量子线制造方法
公开(公告)号：US06242275B1
公开(公告)日：2001-06-05
申请号：US09137617
申请日：1998-08-21
申请人： Sung Bock Kim , Jeong Rae Ro , El Hang Lee
发明人： Sung Bock Kim , Jeong Rae Ro , El Hang Lee
IPC分类号： H01L2120
CPC分类号： B82Y10/00 , H01L21/02395 , H01L21/02463 , H01L21/02494 , H01L21/02507 , H01L21/02546 , H01L21/0259 , H01L21/02609 , H01L29/125 , Y10S438/962
摘要： A method for manufacturing quantum wires is provided in which a stacked structure having AlAs layers and GaAs layers alternatively is formed, V-grooves are formed beside the GaAs layers and the quantum wires are formed using the V-grooves. The method for manufacturing quantum wires, which method includes the following steps: growing a GaAs buffer layer on the facet (011) of a GaAs single crystal substrate; growing an AlAs layer for using as oxide mask and a GaAs layer for a V-groove alternatively on the GaAs buffer layer so that each GaAs layer is stacked between an AlAs layer and an adjacent AlAs layer; growing the cover layer of GaAs on the AlAs layer which is grown as the top layer of the structure; cutting the entire structure including the GaAs cover layer to the perpendicular direction of (011), whose structure is grown in the orientation of (011) entirely, so as to expose the facet (100); performing a heat treatment for the entire structure cut to expose the facet (100) and forming oxide film on the exposed portion of each AlAs layer; etching each exposed GaAs layer chemically using the oxide as mask and forming V-groove so that the facet (111) of GaAs layer is exposed; and growing the quantum wire in the V-groove.
摘要翻译：提供一种制造量子线的方法，其中形成具有AlAs层和GaAs层的堆叠结构，在GaAs层旁边形成V沟槽，并且使用V形槽形成量子线。制造量子线的方法，该方法包括以下步骤：在GaAs单晶衬底的面（011）上生长GaAs缓冲层; 在GaAs缓冲层上生长用作氧化物掩模和用于V沟槽的GaAs层的AlAs层，使得每个GaAs层堆叠在AlAs层和相邻的AlAs层之间; 在作为结构的顶层生长的AlAs层上生长GaAs覆盖层; 将包括GaAs覆盖层的整个结构切割成（011）的垂直方向，其结构全部沿着（011）的取向生长，从而露出小面（100）。对整个结构进行热处理以暴露小面（100）并在每个AlAs层的暴露部分上形成氧化物膜; 使用氧化物作为掩模化学地蚀刻每个暴露的GaAs层并形成V形槽，使得GaAs层的面（111）暴露; 并在V槽中生长量子线。

3. 发明授权

US6033972A Growing method of GaAs quantum dots using chemical beam epitaxy 有权
标题翻译：使用化学束外延的GaAs量子点的生长方法
公开(公告)号：US6033972A
公开(公告)日：2000-03-07
申请号：US135124
申请日：1998-08-17
申请人： Jeong Rae Ro , Sung Bock Kim , El Hang Lee
发明人： Jeong Rae Ro , Sung Bock Kim , El Hang Lee
IPC分类号： H01L21/20 , H01L21/205 , H01L21/208
CPC分类号： B82Y30/00 , B82Y10/00 , H01L21/02395 , H01L21/02463 , H01L21/02502 , H01L21/02546 , H01L21/0262 , H01L21/02631 , Y10S438/962
摘要： The formation of self-assembled GaAs quantum dots on (100) GaAs via chemical beam epitaxy (CBE) technique using triethylgallium (TEGa) and arsine (AsH.sub.3) is disclosed. GaAs quantum dots are easy to grow from Ga-droplets which are successively supplied with arsine with neither pattern definition nor pre-treatment steps prior to the growth. The density and the size of Ga-droplets are found to be sensitive to the growth conditions, such as the growth temperature, the beam equivalent pressure of TEGa, and the amount of TEGa supplied. This invention suggests that, unlike Stranski-Krastanow growth, the Ga-droplet-induced CBE technique can be a useful method for the fabrication of quantum dot structure by simple change of gas supply mode, even in lattice-matched system.
摘要翻译：公开了通过使用三乙基镓（TEGa）和胂（AsH 3）的化学束外延（CBE）技术在（100）GaAs上自组装GaAs量子点的形成。 GaAs量子点容易从Ga液滴中生长，其连续地供应胂，既没有图案定义也没有在生长之前的预处理步骤。发现Ga液滴的密度和尺寸对生长条件如生长温度，TEGa的束当量压力和所提供的TEGa的量是敏感的。本发明表明，与Stranski-Krastanow生长不同，Ga液滴诱导的CBE技术可以通过气体供应模式的简单改变来制造量子点结构的有用方法，即使在晶格匹配系统中也是如此。

4. 发明授权

US5833870A Method for forming a high density quantum wire 失效
标题翻译：形成高密度量子线的方法
公开(公告)号：US5833870A
公开(公告)日：1998-11-10
申请号：US833047
申请日：1997-04-03
申请人： Sung Bock Kim , Jeong Rae Ro , El Hang Lee
发明人： Sung Bock Kim , Jeong Rae Ro , El Hang Lee
IPC分类号： H01L33/00 , H01L21/20 , H01L21/205 , H01L21/335 , H01L29/12 , H01L21/00
CPC分类号： B82Y10/00 , H01L21/02439 , H01L21/02543 , H01L21/02546 , H01L21/02639 , H01L29/125 , H01L29/66469
摘要： A method for forming a highly dense quantum wire, the method comprising the steps of: depositing a dielectric mask having dielectric patterns on the top surface of a semiconductor (100) substrate; forming the dielectric patterns in parallel to a (011) orientation on the semiconductor substrate; exposing a (111)B side and a(111)B side by chemical etching a selected region between the patterns so that the semiconductor substrate has a dove-tail shape; forming a buffer layer on the dove-tail semiconductor substrate; forming the first barrier layer on the buffer layer; forming a well layer on the first barrier layer; and forming the second barrier layer on the well layer.
摘要翻译：一种用于形成高密度量子线的方法，所述方法包括以下步骤：在半导体（100）衬底的顶表面上沉积具有电介质图案的电介质掩模; 在半导体衬底上形成平行于（011）取向的电介质图案; 通过化学蚀刻图案之间的选定区域来暴露（1 + E，ov 1 + EE 1）B侧和（11 + E，ov 1 + EE）B侧，使得半导体衬底具有鸽尾形状; 在鸽尾半导体衬底上形成缓冲层; 在缓冲层上形成第一阻挡层; 在所述第一阻挡层上形成阱层; 以及在所述阱层上形成所述第二阻挡层。

5. 发明授权

US08723222B2 Nitride electronic device and method for manufacturing the same 有权
标题翻译：氮化物电子器件及其制造方法
公开(公告)号：US08723222B2
公开(公告)日：2014-05-13
申请号：US13548522
申请日：2012-07-13
申请人： Sung Bum Bae , Eun Soo Nam , Jae Kyoung Mun , Sung Bock Kim , Hae Cheon Kim , Chull Won Ju , Sang Choon Ko , Jong-Won Lim , Ho Kyun Ahn , Woo Jin Chang , Young Rak Park
发明人： Sung Bum Bae , Eun Soo Nam , Jae Kyoung Mun , Sung Bock Kim , Hae Cheon Kim , Chull Won Ju , Sang Choon Ko , Jong-Won Lim , Ho Kyun Ahn , Woo Jin Chang , Young Rak Park
IPC分类号： H01L31/102
CPC分类号： H01L29/66446 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02647 , H01L21/8252 , H01L27/0605 , H01L27/0883
摘要： The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.
摘要翻译：本发明涉及一种氮化物电子器件及其制造方法，特别涉及一种氮化物电子器件及其制造方法，该氮化物电子器件及其制造方法可以通过再生技术在同一衬底上实现各种氮化物一体化结构（用于包括III族元素如镓（Ga），铝（Al）和铟（In））和氮（III）的III族氮化物半导体电子器件中的半绝缘氮化镓（GaN）层的外延横向过度生长：ELOG）。

6. 发明授权

US07583869B2 Electroabsorption duplexer 有权
标题翻译：电吸收双工器
公开(公告)号：US07583869B2
公开(公告)日：2009-09-01
申请号：US11451743
申请日：2006-06-13
申请人： Young Shik Kang , Je Ha Kim , Sung Bock Kim , Yong Duck Chung , Kwang Seong Choi
发明人： Young Shik Kang , Je Ha Kim , Sung Bock Kim , Yong Duck Chung , Kwang Seong Choi
IPC分类号： G02B6/12
CPC分类号： H01S5/026 , H01S5/0262 , H01S5/0265 , H01S5/1014 , H01S5/22 , H01S5/50
摘要： An electroabsorption (EA) duplexer in which an optical amplifier, a photodetector, and an optical modulator are monolithically integrated to obtain a high radio frequency (RF) gain in radio-over fiber (RoF) link optical transmission technology is provided. The EA duplexer includes a substrate, a separation area, an optical detection/modulation unit, and an optical amplification unit. The separation area includes a first epitaxial layer formed of at least one material layer on the substrate. The first epitaxial layer functions as a first optical waveguide. The optical detection/modulation unit includes a second epitaxial layer formed of at least one material layer on the first epitaxial layer to detect and modulate an optical signal. The second epitaxial layer functions as a second optical waveguide. The optical amplification unit includes the second optical waveguide and a third epitaxial layer formed of at least one material layer on the second epitaxial layer to amplify an optical signal. The third epitaxial layer functions as a third optical waveguide. The optical amplification unit is electrically separated from the optical detection/modulation unit by the separation area and is disposed on at least one side of the optical detection/modulation unit.
摘要翻译：提供了其中光放大器，光电检测器和光调制器被单片集成以获得无线电光纤（RoF）链路光传输技术中的高射频（RF）增益的电吸收（EA）双工器。 EA双工器包括基板，分离区，光检测/调制单元和光放大单元。分离区域包括由衬底上的至少一个材料层形成的第一外延层。第一外延层用作第一光波导。光检测/调制单元包括由第一外延层上的至少一个材料层形成的第二外延层，以检测和调制光信号。第二外延层用作第二光波导。光放大单元包括第二光波导和由第二外延层上的至少一个材料层形成的第三外延层，以放大光信号。第三外延层用作第三光波导。光放大单元通过分离区域与光检测/调制单元电分离，并设置在光检测/调制单元的至少一侧。

7. 发明申请

US20060189016A1 Method of fabricating semiconductor optical device 有权
标题翻译：制造半导体光学器件的方法
公开(公告)号：US20060189016A1
公开(公告)日：2006-08-24
申请号：US11293615
申请日：2005-12-02
申请人： Moon Park , Sahng Gi Park , Su Hwan Oh , Yong Soon Baek , Kwang Ryong Oh , Gyung Ock Kim , Sung Bock Kim
发明人： Moon Park , Sahng Gi Park , Su Hwan Oh , Yong Soon Baek , Kwang Ryong Oh , Gyung Ock Kim , Sung Bock Kim
IPC分类号： H01L21/00
CPC分类号： H01S5/026 , H01S5/0425 , H01S5/12 , H01S5/2063 , H01S5/2275 , H01S5/3201 , H01S5/50 , H01S2302/00
摘要： Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.
摘要翻译：提供一种制造用于用户或波分复用（WDM）光通信系统的半导体光学器件的方法，其中激光二极管（LD）和半导体光放大器（SOA）集成在单个有源层中。激光二极管（LD）和半导体光放大器（SOA）彼此光学连接，并通过离子注入彼此电绝缘，由LD产生的光被SOA放大，以提供低振荡起始电流和高当通过每个电极单独注入电流时输出光的强度。

8. 发明授权

US06593162B1 Method of manufacturing semiconductor optical device 有权
标题翻译：制造半导体光学器件的方法
公开(公告)号：US06593162B1
公开(公告)日：2003-07-15
申请号：US10185137
申请日：2002-06-27
申请人： Kyung Hyun Park , Yong Soon Baek , Sung Bock Kim , Kwang Ryong Oh
发明人： Kyung Hyun Park , Yong Soon Baek , Sung Bock Kim , Kwang Ryong Oh
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01S5/1014 , H01S5/1032 , H01S5/106 , H01S5/2081 , H01S5/227 , H01S5/2275 , H01S5/34373
摘要： The present invention relates to a method of manufacturing a semiconductor optical device. The present invention discloses a method of manufacturing an optical device of a planar buried heterostructure (PBH) type by which an active layer region of a taper shape at both ends is patterned, an undoped InP layer is selectively grown in order to reduce the propagation loss and two waveguides are simultaneously formed by means of a self-aligned method, thus simplifying the process to increase repeatability and yield.
摘要翻译：本发明涉及半导体光学器件的制造方法。本发明公开了一种制造平面埋入异质结构（PBH）型的光学器件的方法，通过该方法，在两端形成锥形的有源层区域被图案化，选择性地生长未掺杂的InP层，以便降低传播损耗并且通过自对准方法同时形成两个波导，从而简化了增加重复性和产率的过程。

9. 发明申请

US20120145999A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120145999A1
公开(公告)日：2012-06-14
申请号：US13193690
申请日：2011-07-29
申请人： Dongwoo Suh , Sung Bock Kim , Hojun Ryu
发明人： Dongwoo Suh , Sung Bock Kim , Hojun Ryu
IPC分类号： H01L29/775 , B82Y40/00 , B82Y99/00 , H01L21/336
CPC分类号： H01L29/0673 , B82Y10/00 , B82Y40/00 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02603 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/068 , H01L29/66439 , H01L29/775 , H01L29/78696 , Y10S977/762
摘要： Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.
摘要翻译：提供半导体器件及其制造方法。该半导体器件包括：衬底，其包括第一顶表面，比第一顶表面低的第二顶表面和设置在第一和第二顶表面之间的第一垂直表面，形成在第一顶表面下的第一源极/漏极区域表面，在一个方向上从第一垂直表面延伸并与第二顶表面间隔开的第一纳米线，从第一纳米线的沿一个方向的侧表面延伸的第二纳米线，与第二顶表面间隔开，并且包括第一源极/漏极区域，第一纳米线上的栅电极以及第一纳米线与栅电极之间的介电层。

10. 发明授权

US07813388B2 Self-pulsating laser diode 失效
标题翻译：自脉冲激光二极管
公开(公告)号：US07813388B2
公开(公告)日：2010-10-12
申请号：US11932937
申请日：2007-10-31
申请人： Kyung Hyun Park , Hyun Sung Ko , Young Ahn Leem , Min Yong Jeon , Eun Deok Sim , Sung Bock Kim
发明人： Kyung Hyun Park , Hyun Sung Ko , Young Ahn Leem , Min Yong Jeon , Eun Deok Sim , Sung Bock Kim
IPC分类号： H01S3/098
CPC分类号： H01S5/0625 , H01S5/0658
摘要： Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.
摘要翻译：提供了一种自脉动激光二极管，包括：用作反射器的分布反馈（DFB）部分; 连接到DFB部分并且在一端具有劈裂小面的增益部分; 相位控制部，其插入在所述DFB部和所述增益部之间; 以及外部射频（RF）输入部分，将外部RF信号施加到DFB部分和增益部分中的至少一个。

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