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1. 发明授权

US09022834B2 Polishing solution for CMP and polishing method using the polishing solution 有权
标题翻译：使用抛光液的CMP抛光方法抛光液
公开(公告)号：US09022834B2
公开(公告)日：2015-05-05
申请号：US13139117
申请日：2011-06-10
申请人： Eiichi Satou , Munehiro Oota , Kanshi Chinone , Shigeru Nobe , Kazuhiro Enomoto , Tadahiro Kimura , Masato Fukasawa , Masanobu Habiro , Yousuke Hoshi
发明人： Eiichi Satou , Munehiro Oota , Kanshi Chinone , Shigeru Nobe , Kazuhiro Enomoto , Tadahiro Kimura , Masato Fukasawa , Masanobu Habiro , Yousuke Hoshi
IPC分类号： B24B1/00 , C09G1/02 , H01L21/3105 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.
摘要翻译：根据本发明的用于CMP的抛光溶液包括磨粒，添加剂和水，并且抛光溶液包含满足特定条件的添加剂的有机化合物。本发明的抛光方法是用于在表面上抛光具有氧化硅膜的基板，并且抛光方法包括用抛光垫抛光氧化硅膜的步骤，同时在氧化硅膜之间提供用于CMP的抛光溶液和抛光垫。

2. 发明授权

US08853082B2 Polishing liquid for CMP and polishing method using the same 有权
标题翻译： CMP抛光液及使用其的抛光方法
公开(公告)号：US08853082B2
公开(公告)日：2014-10-07
申请号：US13519809
申请日：2010-12-24
申请人： Masayuki Hanano , Eiichi Satou , Munehiro Oota , Kanshi Chinone
发明人： Masayuki Hanano , Eiichi Satou , Munehiro Oota , Kanshi Chinone
IPC分类号： H01L21/302
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02 , H01L21/31053
摘要： An object of the present invention is to provide a polishing liquid for CMP with which polishing scratches can be reduced and a sufficiently high polishing rate can be obtained in a CMP step for an ILD film, aggregation of an abrasive grain is difficult to occur, and high flatness is obtained, and provide a polishing method using the same. The polishing liquid for CMP according to the present invention is a polishing liquid for CMP containing an abrasive grain, an additive, and water, wherein the abrasive grain comprises a cerium-based particle, and the additive comprises a 4-pyrone-based compound and at least one of a nonionic surfactant or a cationic surfactant: [wherein X11, X12, and X13 each independently represent a hydrogen atom or a monovalent substituent].
摘要翻译：本发明的目的是提供一种用于CMP的抛光液，其中在ILD膜的CMP步骤中可以减少抛光痕迹并且可以获得足够高的抛光速率，难以发生磨粒的凝集，获得高平整度，并提供使用该平面度的抛光方法。根据本发明的用于CMP的抛光液是用于CMP的抛光液，其含有磨粒，添加剂和水，其中磨粒包含铈基颗粒，并且添加剂包括4-吡喃酮基化合物和至少一种非离子表面活性剂或阳离子表面活性剂：[其中X11，X12和X13各自独立地表示氢原子或一价取代基]。

3. 发明授权

US08592317B2 Polishing solution for CMP and polishing method using the polishing solution 有权
标题翻译：使用抛光液的CMP抛光方法抛光液
公开(公告)号：US08592317B2
公开(公告)日：2013-11-26
申请号：US13102486
申请日：2011-05-06
申请人： Eiichi Satou , Shigeru Nobe , Munehiro Oota , Masayuki Hanano , Shigeru Yoshikawa
发明人： Eiichi Satou , Shigeru Nobe , Munehiro Oota , Masayuki Hanano , Shigeru Yoshikawa
IPC分类号： H01L21/306 , H01L21/304 , C09K13/00
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： The polishing solution for CMP of the invention comprises abrasive grains, a first additive and water, wherein the first additive is at least 1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole. The polishing method of the invention is a polishing method for a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.
摘要翻译：本发明的CMP抛光液包括磨粒，第一添加剂和水，其中第一添加剂为至少1,2-苯并异噻唑-3（2H） - 酮或2-氨基噻唑。本发明的研磨方法是在表面具有氧化硅膜的基板的研磨方法，该抛光方法包括在研磨用氧化硅上研磨氧化硅膜的工序，同时在氧化硅电影和抛光垫。

4. 发明授权

US5546903A Throttle valve control device of internal combustion engine 失效
标题翻译：内燃机节流阀控制装置
公开(公告)号：US5546903A
公开(公告)日：1996-08-20
申请号：US448868
申请日：1995-05-24
申请人： Eiichi Satou , Masahiro Iriyama
发明人： Eiichi Satou , Masahiro Iriyama
IPC分类号： F02D9/02 , F02D11/10 , F02D29/02 , F02D45/00 , B60K28/16
CPC分类号： F02D9/02 , F02D11/10 , F02D2009/021 , F02D2009/0279
摘要： A throttle valve control device having a traction control system includes a first control system which controls a throttle valve in accordance with movement of an accelerator pedal, a second control system which, upon a traction control of the vehicle, enforcedly pivots, with an aid of an electric motor, the throttle valve in a direction to reduce its open degree. An accelerator position sensor issues a first signal which represents the operation position of the first control system and an actuator position sensor issues a second signal which represents the operation position of the electric motor. A first device derives a first open degree of the throttle valve from the first signal and a second device derives a second open degree of the throttle valve from the second signal. A third device selects the smaller of the first and second open degrees of the throttle valve. The second control system is operated in accordance with both the second signal and the selected smaller open degree of the throttle valve.
摘要翻译：具有牵引力控制系统的节气门控制装置包括：第一控制系统，其根据加速器踏板的移动来控制节气门;第二控制系统，在车辆的牵引力控制下，借助于一个电动机，节流阀在一个方向上减小其开度。加速器位置传感器发出表示第一控制系统的操作位置的第一信号，并且致动器位置传感器发出表示电动机的操作位置的第二信号。第一装置从第一信号导出节流阀的第一开度，第二装置从第二信号导出节流阀的第二开度。第三装置选择节流阀的第一和第二开度的较小者。第二控制系统根据第二信号和选择的较小的节流阀开度来操作。

5. 发明申请

US20120315763A1 POLISHING LIQUID FOR CMP AND POLISHING METHOD USING THE SAME 有权
标题翻译：用于CMP和抛光方法的抛光液
公开(公告)号：US20120315763A1
公开(公告)日：2012-12-13
申请号：US13519809
申请日：2010-12-24
申请人： Masayuki Hanano , Eiichi Satou , Munehiro Oota , Kanshi Chinone
发明人： Masayuki Hanano , Eiichi Satou , Munehiro Oota , Kanshi Chinone
IPC分类号： C09K13/00 , H01L21/306
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02 , H01L21/31053
摘要： An object of the present invention is to provide a polishing liquid for CMP with which polishing scratches can be reduced and a sufficiently high polishing rate can be obtained in a CMP step for an ILD film, aggregation of an abrasive grain is difficult to occur, and high flatness is obtained, and provide a polishing method using the same. The polishing liquid for CMP according to the present invention is a polishing liquid for CMP containing an abrasive grain, an additive, and water, wherein the abrasive grain comprises a cerium-based particle, and the additive comprises a 4-pyrone-based compound and at least one of a nonionic surfactant or a cationic surfactant: [wherein X11, X12, and X13 each independently represent a hydrogen atom or a monovalent substituent.]
摘要翻译：本发明的目的是提供一种用于CMP的抛光液，其中在ILD膜的CMP步骤中可以减少抛光痕迹并且可以获得足够高的抛光速率，难以发生磨粒的凝集，获得高平整度，并提供使用该平面度的抛光方法。根据本发明的用于CMP的抛光液是用于CMP的抛光液，其含有磨粒，添加剂和水，其中磨粒包含铈基颗粒，并且添加剂包括4-吡喃酮基化合物和至少一种非离子表面活性剂或阳离子表面活性剂：[其中X11，X12和X13各自独立地表示氢原子或一价取代基。

6. 发明申请

US20110275285A1 POLISHING SOLUTION FOR CMP AND POLISHING METHOD USING THE POLISHING SOLUTION 有权
标题翻译：使用抛光溶液的CMP抛光方法的抛光方案
公开(公告)号：US20110275285A1
公开(公告)日：2011-11-10
申请号：US13139117
申请日：2011-06-10
申请人： Eiichi Satou , Munehiro Oota , Kanshi Chinone , Shigeru Nobe , Kazuhiro Enomoto , Tadahiro Kimura , Masato Fukasawa , Masanobu Habiro , Yousuke Hoshi
发明人： Eiichi Satou , Munehiro Oota , Kanshi Chinone , Shigeru Nobe , Kazuhiro Enomoto , Tadahiro Kimura , Masato Fukasawa , Masanobu Habiro , Yousuke Hoshi
IPC分类号： B24B1/00 , C09G1/02
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.
摘要翻译：根据本发明的用于CMP的抛光溶液包括磨粒，添加剂和水，并且抛光溶液包含满足特定条件的添加剂的有机化合物。本发明的抛光方法是用于在表面上抛光具有氧化硅膜的基板，并且抛光方法包括用抛光垫抛光氧化硅膜的步骤，同时在氧化硅膜之间提供用于CMP的抛光溶液和抛光垫。

7. 发明申请

US20110275217A1 POLISHING SOLUTION FOR CMP AND POLISHING METHOD USING THE POLISHING SOLUTION 有权
标题翻译：使用抛光溶液的CMP抛光方法的抛光方案
公开(公告)号：US20110275217A1
公开(公告)日：2011-11-10
申请号：US13102486
申请日：2011-05-06
申请人： Eiichi Satou , Shigeru Nobe , Munehiro Oota , Masayuki Hanano , Shigeru Yoshikawa
发明人： Eiichi Satou , Shigeru Nobe , Munehiro Oota , Masayuki Hanano , Shigeru Yoshikawa
IPC分类号： H01L21/306 , C09K13/00 , H01L21/304
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： The polishing solution for CMP of the invention comprises abrasive grains, a first additive and water, wherein the first additive is at least 1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole. The polishing method of the invention is a polishing method for a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.
摘要翻译：本发明的CMP抛光液包括磨粒，第一添加剂和水，其中第一添加剂为至少1,2-苯并异噻唑-3（2H） - 酮或2-氨基噻唑。本发明的研磨方法是在表面具有氧化硅膜的基板的研磨方法，该抛光方法包括在研磨用氧化硅上研磨氧化硅膜的工序，同时在氧化硅电影和抛光垫。

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