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1. 发明授权

US08734204B2 Polishing solution for metal films and polishing method using the same 有权
标题翻译：金属薄膜抛光液及使用其的抛光方法
公开(公告)号：US08734204B2
公开(公告)日：2014-05-27
申请号：US12937773
申请日：2009-04-13
申请人： Kouji Haga , Masato Fukasawa , Hiroshi Nakagawa , Kouji Mishima
发明人： Kouji Haga , Masato Fukasawa , Hiroshi Nakagawa , Kouji Mishima
IPC分类号： B24B1/00
CPC分类号： H01L21/3212 , C09G1/02
摘要： A polishing solution for metal films that comprises an oxidizing agent, a metal oxide solubilizer, a metal corrosion preventing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a copolymer of acrylic acid and methacrylic acid, the copolymerization ratio of methacrylic acid in the copolymer being 1-20 mol % based on the total of acrylic acid and methacrylic acid.
摘要翻译：一种用于金属膜的抛光溶液，其包含氧化剂，金属氧化物增溶剂，金属防腐剂，水溶性聚合物和水，其中所述水溶性聚合物是丙烯酸和甲基丙烯酸的共聚物，所述共聚比的共聚物中的甲基丙烯酸为1-20摩尔％，基于丙烯酸和甲基丙烯酸的总量。

2. 发明授权

US08481428B2 Polishing slurry and polishing method 有权
公开(公告)号：US08481428B2
公开(公告)日：2013-07-09
申请号：US13299699
申请日：2011-11-18
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

3. 发明申请

US20100197201A1 POLISHING LIQUID FOR METAL AND METHOD OF POLISHING 失效
标题翻译：金属抛光液和抛光方法
公开(公告)号：US20100197201A1
公开(公告)日：2010-08-05
申请号：US12670292
申请日：2008-07-28
申请人： Yutaka Nomura , Masato Fukasawa , Hiroshi Nakagawa
发明人： Yutaka Nomura , Masato Fukasawa , Hiroshi Nakagawa
IPC分类号： B24B1/00 , C09K13/00 , C09K13/06
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： Disclosed is a metal-polishing liquid comprising: a metal-oxide-dissolving agent; a metal-oxidizing agent; a metal anticorrosive; a water-soluble polymer having a weight-average molecular weight of 8,000 or higher and having an anionic functional group and a nonionic functional group; and water, and having a pH within the range of 2.5 or higher but 5.0 or less. The metal-polishing liquid is effective in reducing the frictional force in polishing which generates during CMP. And is highly effective in flattening the surface of a work to be polished.
摘要翻译：公开了一种金属抛光液，其包含：金属氧化物溶解剂; 金属氧化剂; 金属防腐; 重均分子量为8000以上且具有阴离子官能团和非离子官能团的水溶性聚合物; 和水，并且pH在2.5以上至5.0以下的范围内。金属抛光液有效减少在CMP期间产生的抛光摩擦力。并且对于要抛光的工件的表面变平，是非常有效的。

4. 发明申请

US20100015806A1 CMP POLISHING SLURRY, ADDITIVE LIQUID FOR CMP POLISHING SLURRY, AND SUBSTRATE-POLISHING PROCESSES USING THE SAME 审中-公开
标题翻译： CMP抛光浆料，用于CMP抛光浆料的添加剂液体，以及使用其的底物抛光方法
公开(公告)号：US20100015806A1
公开(公告)日：2010-01-21
申请号：US12440755
申请日：2007-09-13
申请人： Masato Fukasawa , Chiaki Yamagishi , Tadahiro Kimura , Toshiaki Akutsu
发明人： Masato Fukasawa , Chiaki Yamagishi , Tadahiro Kimura , Toshiaki Akutsu
IPC分类号： H01L21/304 , C09K13/00
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02 , H01L21/31053 , H01L21/3212
摘要： The invention relates to a CMP polishing slurry containing cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer includes a polymer obtained by polymerizing a monomer including at least one of a carboxylic acid having an unsaturated double bond and a salt thereof, using a reducing inorganic acid salt and oxygen as a redox polymerization initiator; an additive liquid for CMP polishing slurry; and substrate-polishing processes using the same. This makes it possible to polish a silicon oxide film effectively in a CMP technique for planarizing an interlayer dielectric, a BPSG film or a shallow trench isolating insulated film.
摘要翻译：本发明涉及含有氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中所述水溶性聚合物包括通过聚合包含至少一种具有不饱和羧酸的羧酸的单体获得的聚合物双键及其盐，使用还原性无机酸盐和氧作为氧化还原聚合引发剂; 用于CMP抛光浆料的添加剂液体; 和使用其的基板抛光工艺。这使得可以在用于平坦化层间电介质，BPSG膜或浅沟槽隔离绝缘膜的CMP技术中有效地抛光氧化硅膜。

5. 发明申请

US20060148667A1 Cmp polishing compound and polishing method 有权
标题翻译： CMP抛光复合和抛光方法
公开(公告)号：US20060148667A1
公开(公告)日：2006-07-06
申请号：US10544073
申请日：2004-01-30
申请人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
发明人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
IPC分类号： C11D7/50
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要翻译：本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有任意一种N-单取代产物的骨架的化合物和选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物的任何一种的N，N-二取代的产物。对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。因此，可以提供可以有效地快速地研磨由氧化硅等制成的膜的抛光浆料和抛光方法，并且在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制其工艺薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。

6. 发明授权

US08900335B2 CMP polishing slurry and method of polishing substrate 有权
标题翻译： CMP抛光浆料和抛光底物的方法
公开(公告)号：US08900335B2
公开(公告)日：2014-12-02
申请号：US12768082
申请日：2010-04-27
申请人： Masato Fukasawa , Naoyuki Koyama , Kouji Haga , Toshiaki Akutsu
发明人： Masato Fukasawa , Naoyuki Koyama , Kouji Haga , Toshiaki Akutsu
IPC分类号： B24D3/02 , C09C1/68 , C09K3/14 , C09G1/02
CPC分类号： C09K3/1463 , C09G1/02
摘要： A CMP polishing slurry of the present invention contains cerium oxide particles, water, and a polymer of at least one of a methacrylic acid and the salt thereof, and/or a polymer of at least one of a methacrylic acid and the salt thereof and a monomer having an unsaturated double bond, preferably contains furthermore a dispersant or a polymer of monomers containing at least one of an acrylic acid and the salt thereof. The present invention provides a CMP polishing slurry and a polishing method that, after polishing, give a polished film having a smaller difference in residual film thickness due to a pattern density difference.
摘要翻译：本发明的CMP抛光浆料含有氧化铈颗粒，水和甲基丙烯酸及其盐中的至少一种的聚合物和/或甲基丙烯酸及其盐中的至少一种的聚合物和具有不饱和双键的单体优选还含有分散剂或含有丙烯酸及其盐中的至少一种的单体的聚合物。本发明提供一种CMP抛光浆料和抛光方法，其在抛光后由于图案密度差而产生具有较小残留膜厚差异的抛光膜。

7. 发明授权

US08524111B2 CMP abrasive slurry for polishing insulation film, polishing method, and semiconductor electronic part polished by the polishing method 有权
标题翻译：用于抛光绝缘膜的CMP磨料浆料，抛光方法和通过抛光方法抛光的半导体电子部件
公开(公告)号：US08524111B2
公开(公告)日：2013-09-03
申请号：US12162662
申请日：2007-01-31
申请人： Masato Fukasawa , Kazuhiro Enomoto , Chiaki Yamagishi , Naoyuki Koyama
发明人： Masato Fukasawa , Kazuhiro Enomoto , Chiaki Yamagishi , Naoyuki Koyama
IPC分类号： C09K13/00 , H01L21/302
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention provides a CMP abrasive slurry for polishing insulation film, that allow efficiently and high-speed polishing of insulation films such as SiO2 film and SiOC film in the CMP method of flattening an interlayer insulation film, a BPSG film, an insulation film for shallow trench isolation, or a wiring-insulating film layer, a polishing method by using the abrasive slurry, and a semiconductor electronic part polished by the polishing method. A CMP abrasive slurry for polishing insulation film containing cerium oxide particles, a dispersant, a water-soluble polymer having amino groups on the side chains and water, a polishing method by using the CMP abrasive slurry, and a semiconductor electronic part polished by the polishing method.
摘要翻译：本发明提供了一种用于抛光绝缘膜的CMP磨料浆料，其在使层压绝缘膜平坦化的CMP方法，BPSG膜，绝缘膜用于在绝缘膜上进行有效地高速抛光，其可以有效地高速地抛光诸如SiO 2膜和SiOC膜的绝缘膜浅沟槽隔离或布线绝缘膜层，通过使用磨料浆料的抛光方法和通过抛光方法抛光的半导体电子部件。用于抛光含有氧化铈颗粒的绝缘膜，分散剂，在侧链上具有氨基的水溶性聚合物和水的CMP磨料浆料，使用CMP磨料浆料的抛光方法以及通过抛光抛光的半导体电子部件方法。

8. 发明授权

US07994058B2 Polishing slurry and polishing method 有权
公开(公告)号：US07994058B2
公开(公告)日：2011-08-09
申请号：US11802813
申请日：2007-05-25
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/302
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

9. 发明申请

US20110028073A1 CMP POLISHING SLURRY AND POLISHING METHOD 有权
标题翻译： CMP抛光浆和抛光方法
公开(公告)号：US20110028073A1
公开(公告)日：2011-02-03
申请号：US12902337
申请日：2010-10-12
申请人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
发明人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
IPC分类号： B24B29/02 , B24B7/20 , C09K13/00 , C08L33/24
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要翻译：本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有N-单取代产物和一种选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物中的任何一种的N，N-二取代的产物。对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。因此，可以提供可以有效地快速地研磨由氧化硅等制成的膜的抛光浆料和抛光方法，并且在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制其工艺薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。

10. 发明申请

US20070232197A1 Polishing slurry and polishing method 有权
标题翻译：抛光浆和抛光方法
公开(公告)号：US20070232197A1
公开(公告)日：2007-10-04
申请号：US11802813
申请日：2007-05-25
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： B24B1/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译：本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有水和研磨剂的研磨浆料，其中研磨剂的表面用烷基并且优选还包含金属氧化剂，水溶性聚合物和金属抑制剂。

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