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1. 发明授权

US06416814B1 Volatile organometallic complexes of lowered reactivity suitable for use in chemical vapor deposition of metal oxide films 有权
标题翻译：适用于金属氧化物膜化学气相沉积的低反应性的挥发性有机金属络合物
公开(公告)号：US06416814B1
公开(公告)日：2002-07-09
申请号：US09732233
申请日：2000-12-07
申请人： Dean M. Giolando
发明人： Dean M. Giolando
IPC分类号： C23C1618
CPC分类号： C03C17/2456 , C03C17/245 , C03C17/2453 , C03C2217/211 , C03C2217/212 , C03C2217/216 , C03C2218/152
摘要： Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.
摘要翻译：锡，钛和锌的新型连接化合物可用作金属氧化物CVD前体化合物，而不会极端反应性的损害，同时保持通过与加热的基底接触而产生高质量金属氧化物涂层的能力。

2. 发明授权

US08574944B2 System for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaic devices and photovoltaic cells made thereby 有权
标题翻译：用于选择性地填充由此制成的光伏器件和光伏电池中的针孔，弱分流器和/或划线的系统
公开(公告)号：US08574944B2
公开(公告)日：2013-11-05
申请号：US12921641
申请日：2009-03-27
申请人： Dean M. Giolando
发明人： Dean M. Giolando
IPC分类号： H01L21/00
CPC分类号： H01L31/022425 , H01L31/186 , Y02E10/50 , Y02P70/521
摘要： A system for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaics devices and photovoltaic cells made thereby is described.
摘要翻译：描述了一种用于选择性地填充光伏器件中的针孔，弱分流器和/或划线以及由此制成的光伏电池的系统。

3. 发明授权

US06627765B2 Volatile organometallic complexes suitable for use in chemical vapor depositions on metal oxide films 有权
公开(公告)号：US06627765B2
公开(公告)日：2003-09-30
申请号：US10150561
申请日：2002-05-21
申请人： Dean M. Giolando
发明人： Dean M. Giolando
IPC分类号： C07F722
CPC分类号： C03C17/2456 , C03C17/245 , C03C17/2453 , C03C2217/211 , C03C2217/212 , C03C2217/216 , C03C2218/152
摘要： Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.

4. 发明授权

US5663390A Method of producing organo indium chlorides 失效
标题翻译：生产有机氯化铟的方法
公开(公告)号：US5663390A
公开(公告)日：1997-09-02
申请号：US705913
申请日：1996-08-29
申请人： Dean M. Giolando
发明人： Dean M. Giolando
IPC分类号： B01J27/125 , C07F5/00
CPC分类号： C07F5/00
摘要： A method for producing organo metal chlorides directly from molten metal. The organo metal chlorides are formed by contacting an organo chloride directly with a metal melt. The preferred method includes the use of indium as the metal and methyl chloride as the organo chloride. The direct contact of the methyl chloride with the indium metal results in the production of dimethyl indium chloride or methyl indium dichloride depending on the contacting time and efficiency of the process. The resulting products are suitable for use as a precursor gas for chemical vapor deposition processes. Additionally, activator compounds such as oxides or halides are optionally added to the metal melt to enhance the reaction rate.
摘要翻译：一种从熔融金属直接生产有机金属氯化物的方法。有机金属氯化物通过直接与金属熔体直接接触有机氯化物而形成。优选的方法包括使用铟作为金属和氯甲烷作为有机氯化物。甲基氯与铟金属的直接接触导致二氯化铟或二氯化甲基铟的生产取决于该方法的接触时间和效率。所得产物适合用作化学气相沉积工艺的前体气体。此外，活性化合物如氧化物或卤化物任选加入到金属熔体中以提高反应速率。

5. 发明申请

US20090301563A1 SELF-CLEANING COATINGS APPLIED TO SOLAR THERMAL DEVICES 审中-公开
标题翻译：自清洁涂料适用于太阳能热设备
公开(公告)号：US20090301563A1
公开(公告)日：2009-12-10
申请号：US12541308
申请日：2009-08-14
申请人： Alan J. McMaster , Dean M. Giolando
发明人： Alan J. McMaster , Dean M. Giolando
IPC分类号： H01L31/00 , B05D5/12
CPC分类号： C23C18/127 , C03C17/007 , C03C2217/475 , C03C2217/477 , C03C2217/71 , C03C2218/113 , C23C18/1216 , F24S40/40 , F24S70/30 , F24S80/52 , Y02E10/40
摘要： A solar device and a process for preparing a self-cleaning coating on the solar device is disclosed, the process comprises providing a coating composition, adding to the coating composition nanocrystals of a photoactive material, and applying the mixture of coating composition and photoactive material to a surface of a substrate at an elevated temperature, to deposit a self-cleaning coating on the surface of the substrate. The solar device comprises a solar energy conversion device, including a transparent substrate, and a self-cleaning coating adhered to a surface of the substrate.
摘要翻译：公开了太阳能装置和在太阳能装置上制备自清洁涂层的方法，该方法包括提供涂料组合物，向涂料组合物中加入光活性材料的纳米晶体，并将涂料组合物和光活性材料的混合物施加到在高温下的基材表面，以在基材的表面上沉积自清洁涂层。太阳能装置包括太阳能转换装置，其包括透明基板和附着在基板表面上的自清洁涂层。

6. 发明申请

US20080193638A1 Process and Apparatus for Coating Substrates by Spray Pyrolysis 审中-公开
标题翻译：通过喷雾热解涂覆基材的方法和设备
公开(公告)号：US20080193638A1
公开(公告)日：2008-08-14
申请号：US12063939
申请日：2006-08-17
申请人： Alan J. McMaster , Dean M. Giolando , Samia Al-Qaisi
发明人： Alan J. McMaster , Dean M. Giolando , Samia Al-Qaisi
IPC分类号： B05D5/12 , B05B5/00
CPC分类号： C23C18/1233 , B05B5/025 , C23C4/123 , C23C18/02 , C23C18/1216 , C23C18/1245 , C23C18/1258 , C23C18/127 , C23C18/1291 , C23C26/00
摘要： Apparatus and a process for applying a metal oxide coating to a substrate, the process comprising the steps of providing a solution of a metal compound in a solvent, spraying the solution onto the surface of a hot substrate, and pyrolyzing the solution to form a coating of metal oxide on the substrate.
摘要翻译：用于将金属氧化物涂层施加到基底上的装置和方法，所述方法包括以下步骤：在溶剂中提供金属化合物的溶液，将溶液喷涂到热的基底的表面上，并热解该溶液以形成涂层的金属氧化物。

7. 发明申请

US20110214729A1 System for Selectively Filling Pin Holes, Weak Shunts and/or Scribe Lines in Photovoltaic Devices and Photovoltaic Cells Made Thereby 有权
标题翻译：用于在光伏器件和光伏电池中选择性填充针孔，弱分流器和/或划线的系统
公开(公告)号：US20110214729A1
公开(公告)日：2011-09-08
申请号：US12921641
申请日：2009-03-27
申请人： Dean M. Giolando
发明人： Dean M. Giolando
IPC分类号： H01L31/0216 , H01L31/0224
CPC分类号： H01L31/022425 , H01L31/186 , Y02E10/50 , Y02P70/521
摘要： A system for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaics devices and photovoltaic cells made thereby is described.
摘要翻译：描述了一种用于选择性地填充光伏器件中的针孔，弱分流器和/或划线以及由此制成的光伏电池的系统。

8. 发明授权

US07098058B1 Photovoltaic healing of non-uniformities in semiconductor devices 有权
标题翻译：半导体器件中非均匀性的光电愈合
公开(公告)号：US07098058B1
公开(公告)日：2006-08-29
申请号：US11035170
申请日：2005-01-13
申请人： Victor G. Karpov , Yann Roussillon , Diana Shvydka , Alvin D. Compaan , Dean M. Giolando
发明人： Victor G. Karpov , Yann Roussillon , Diana Shvydka , Alvin D. Compaan , Dean M. Giolando
IPC分类号： H01L21/00
CPC分类号： H01L31/186 , Y02E10/50 , Y02P70/521
摘要： A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.
摘要翻译：一种制造使用光能的光伏器件的方法和使器件的电位变化标准化的方法。具有包括偏离半导体的顶表面的电位的异常电位的区域的不均匀性的半导体层被沉积到衬底层上。将包含电解质，至少一种结合材料以及正离子和负离子的溶液施加到半导体的顶表面上。施加光能以在半导体中产生光电压，导致离子和结合材料再次分布到异常电位的区域。接合材料以不均匀性的电位相对于半导体层的顶表面的电位标准化的方式选择性地键合到不均匀性。然后在半导体层的顶表面上沉积导电电极层。

9. 发明授权

US07008481B2 Method and apparatus for depositing a homogeneous pyrolytic coating on substrates 失效
标题翻译：在基材上沉积均质热解涂层的方法和装置
公开(公告)号：US07008481B2
公开(公告)日：2006-03-07
申请号：US10429384
申请日：2003-05-02
申请人： Dean M. Giolando , Alan J. McMaster
发明人： Dean M. Giolando , Alan J. McMaster
IPC分类号： B05B7/00 , B05C5/00
CPC分类号： C03C17/002 , B05B7/0012 , B05B13/00 , B05B14/00 , C03C2214/12
摘要： A method and apparatus for depositing a homogeneous pyrolytic coating on substrates. These coatings would include insulator, metal and semiconductor films on a glass substrate. The apparatus controls the size and distribution of the spray droplets to improve the uniformity of the coatings.
摘要翻译：一种用于在基底上沉积均质热解涂层的方法和装置。这些涂层将包括玻璃基板上的绝缘体，金属和半导体膜。该装置控制喷雾液滴的尺寸和分布，以改善涂层的均匀性。

10. 发明授权

US5817847A Method of producing organo indium chlorides 失效
标题翻译：生产有机氯化铟的方法
公开(公告)号：US5817847A
公开(公告)日：1998-10-06
申请号：US871934
申请日：1997-06-10
申请人： Dean M. Giolando
发明人： Dean M. Giolando
IPC分类号： B01J27/125 , C07F5/00
CPC分类号： C07F5/00
摘要： A method for producing organo metal chlorides directly from molten metal. The organo metal chlorides are formed by contacting an organo chloride directly with a metal melt. The preferred method includes the use of indium as the metal and methyl chloride as the organo chloride. The direct contact of the methyl chloride with the indium metal results in the production of dimethyl indium chloride or methyl indium dichloride depending on the contacting time and efficiency of the process. The resulting products are suitable for use as a precursor gas for chemical vapor deposition processes. Additionally, activator compounds such as oxides or halides are optionally added to the metal melt to enhance the reaction rate.
摘要翻译：一种从熔融金属直接生产有机金属氯化物的方法。有机金属氯化物通过直接与金属熔体直接接触有机氯化物而形成。优选的方法包括使用铟作为金属和氯甲烷作为有机氯化物。甲基氯与铟金属的直接接触导致二氯化铟或二氯化甲基铟的生产取决于该方法的接触时间和效率。所得产物适合用作化学气相沉积工艺的前体气体。此外，活性化合物如氧化物或卤化物任选加入到金属熔体中以提高反应速率。

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