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    • 8. 发明授权
    • Photovoltaic healing of non-uniformities in semiconductor devices
    • 半导体器件中非均匀性的光电愈合
    • US07098058B1
    • 2006-08-29
    • US11035170
    • 2005-01-13
    • Victor G. KarpovYann RoussillonDiana ShvydkaAlvin D. CompaanDean M. Giolando
    • Victor G. KarpovYann RoussillonDiana ShvydkaAlvin D. CompaanDean M. Giolando
    • H01L21/00
    • H01L31/186Y02E10/50Y02P70/521
    • A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.
    • 一种制造使用光能的光伏器件的方法和使器件的电位变化标准化的方法。 具有包括偏离半导体的顶表面的电位的异常电位的区域的不均匀性的半导体层被沉积到衬底层上。 将包含电解质,至少一种结合材料以及正离子和负离子的溶液施加到半导体的顶表面上。 施加光能以在半导体中产生光电压,导致离子和结合材料再次分布到异常电位的区域。 接合材料以不均匀性的电位相对于半导体层的顶表面的电位标准化的方式选择性地键合到不均匀性。 然后在半导体层的顶表面上沉积导电电极层。