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    • 1. 发明授权
    • Memory including master and local word lines coupled to memory cells
storing access information
    • 存储器,包括耦合到存储访问信息的存储单元的主字线和本地字线
    • US5727180A
    • 1998-03-10
    • US473159
    • 1995-06-07
    • Andrew DavisDavid Wills Milton
    • Andrew DavisDavid Wills Milton
    • G11C11/41G06F12/08G06F12/12G11C15/04G06F12/00G06F13/00G11C7/00G11C8/00
    • G11C15/04G06F12/0893G06F12/123G06F2212/1028Y02B60/1225
    • An integrated cache architecture that has low power consumption, high noise immunity, and full support of an integrated validity/least recently used (LRU) cache write mode. The cache stores TAG, index and LRU information directly on a master word line, and cache line data on local word lines. The access information is made available early in the cycle, allowing the cache to disable local word lines that are not needed. The master word lines and local word lines having approximately the same cycle time. By laying out the master and local word lines in a metal layer that substantially renders the stored data immune to overlaying noise sources, high frequency interconnections can be made over the cache without disturbing the stored data. The architecture circuitry efficiently updates the stored LRU information, such that a combined data validity/full LRU cache update protocol is supported.
    • 集成的高速缓存架构,具有低功耗,高抗噪声能力,并全面支持集成有效/最近使用(LRU)缓存写入模式。 高速缓存将TAG,索引和LRU信息直接存储在主字线上,并在本地字线上存储行数据。 访问信息在周期早期可用,允许高速缓存禁用不需要的本地字线。 主字线和本地字线具有大致相同的周期时间。 通过在金属层中布置主和本地字线,使得存储的数据基本上使得不受覆盖噪声源的影响,可以在高速缓存上进行高频互连,而不会干扰存储的数据。 架构电路有效地更新所存储的LRU信息,使得支持组合的数据有效/完整的LRU高速缓存更新协议。
    • 6. 发明授权
    • Fully integrated cache architecture
    • 完全集成的缓存架构
    • US5717648A
    • 1998-02-10
    • US473158
    • 1995-06-07
    • Andrew DavisDavid Wills Milton
    • Andrew DavisDavid Wills Milton
    • G11C11/41G06F12/08G06F12/12G11C15/04G11C7/00
    • G11C15/04G06F12/0893G06F12/123G06F2212/1028Y02B60/1225
    • An integrated cache architecture that has low power consumption, high noise immunity, and full support of an integrated validity/LRU cache write mode. The cache stores TAG, index and LRU information directly on a master word line, and cache line data on local word lines. The access information is made available early in the cycle, allowing the cache to disable local word lines that are not needed. By laying out the master and local word lines in a metal layer that substantially renders the stored data immune to overlaying noise sources, high frequency interconnections can be made over the cache without disturbing the stored data. The cache includes circuitry for efficiently updating the stored LRU information, such that a combined data validity/full LRU cache update protocol is supported.
    • 集成缓存结构,具有低功耗,高抗噪声能力,并且完全支持集成有效/ LRU缓存写入模式。 高速缓存将TAG,索引和LRU信息直接存储在主字线上,并在本地字线上存储行数据。 访问信息在周期早期可用,允许高速缓存禁用不需要的本地字线。 通过在金属层中布置主和本地字线,使得存储的数据基本上使得不受覆盖噪声源的影响,可以在高速缓存上进行高频互连,而不会干扰存储的数据。 高速缓存包括用于有效地更新存储的LRU信息的电路,使得支持组合的数据有效性/完整的LRU高速缓存更新协议。
    • 8. 发明授权
    • Cache memory including master and local word lines coupled to memory
cells
    • 缓存存储器,包括耦合到存储单元的主字线和本地字线
    • US5640339A
    • 1997-06-17
    • US662890
    • 1996-03-11
    • Andrew DavisDavid Wills Milton
    • Andrew DavisDavid Wills Milton
    • G11C11/41G06F12/08G06F12/12G11C15/04G11C7/00G11C8/00G06F13/00
    • G11C15/04G06F12/0893G06F12/123G06F2212/1028Y02B60/1225
    • An integrated cache architecture that has low power consumption, high noise immunity, and full support of an integrated validity/LRU cache write mode. A first plurality of memory cells coupled to the master word lines stores access information corresponding to a plurality of data words stored in a second plurality a memory cells coupled to a plurality of local word lines. The cache stores tag, index and Least Recently Used (LRU) information directly on a master word line, and cache line data on local word lines. The access information is made available early in the cycle, allowing the cache to disable local word lines that are not needed. By laying out the master and local word lines in a metal layer that substantially renders the stored data immune to overlaying noise sources, high frequency interconnections can be made over the cache without disturbing the stored data. The cache includes circuitry for efficiently updating the stored LRU information, such that a combined data validity/full LRU cache update protocol is supported.
    • 集成缓存结构,具有低功耗,高抗噪声能力,并且完全支持集成有效/ LRU缓存写入模式。 耦合到主字线的第一多个存储单元存储对应于存储在耦合到多个本地字线的第二多个存储单元中的多个数据字的访问信息。 高速缓存直接在主字线上存储标签,索引和最近使用的(LRU)信息,并在本地字线上存储行数据。 访问信息在周期早期可用,允许高速缓存禁用不需要的本地字线。 通过在金属层中布置主和本地字线,使得存储的数据基本上使得不受覆盖噪声源的影响,可以在高速缓存上进行高频互连,而不会干扰存储的数据。 高速缓存包括用于有效地更新存储的LRU信息的电路,使得支持组合的数据有效性/完整的LRU高速缓存更新协议。