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1. 发明授权

US4701343A Method of depositing thin films using microwave energy 失效
标题翻译：使用微波能量沉积薄膜的方法
公开(公告)号：US4701343A
公开(公告)日：1987-10-20
申请号：US896049
申请日：1986-08-13
申请人： Stanford R. Ovshinsky , David D. Allred , Lee Walter , Stephen J. Hudgens
发明人： Stanford R. Ovshinsky , David D. Allred , Lee Walter , Stephen J. Hudgens
IPC分类号： C23C16/511 , H01J37/32 , H01L21/205 , C23C11/02
CPC分类号： H01J37/3222 , C23C16/511 , H01J37/32192 , H01J37/32275 , H01L21/0242 , H01L21/02425 , H01L21/0245 , H01L21/02488 , H01L21/02505 , H01L21/02532 , H01L21/0262
摘要： An improved method of depositing thin films onto a substrate with microwave energy by operating at substantially the minimum of the pressure-power curve for the particular geometry of reaction vessel and composition of reaction gases being utilized.
摘要翻译：通过对反应容器的特定几何形状和组成的反应气体的组成进行基本上最小的压力 - 功率曲线的操作，通过微波能量将薄膜沉积到衬底上的改进方法。

2. 发明授权

US4753675A Method of preparing a magnetic material 失效
标题翻译：磁性材料的制备方法
公开(公告)号：US4753675A
公开(公告)日：1988-06-28
申请号：US920018
申请日：1986-10-17
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , David D. Allred , Gregory DeMaggio , Russell C. Custer
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , David D. Allred , Gregory DeMaggio , Russell C. Custer
IPC分类号： B01J19/12 , B22F9/00 , B22F9/28 , H01F1/057 , H05B6/80 , C22B1/00
CPC分类号： H01F1/0571 , B01J19/126 , B22F9/004 , B22F9/28 , H05B6/80 , B01J2219/0894 , B01J2219/1227
摘要： A method of forming a magnetic material. The magnetic material is a solid mass of grains, and has magnetic parameters characterized by: (1) a maximum magnetic energy product, (BH).sub.max, greater than 15 megagaussoersteds; and (2) a remanence greater than 9 kilogauss. The magnetic material is prepared by a two step solidification, heat treatment process. The solidification process is carried out by growing microwave powder or snow. The microwave powder or snow is grown by introducing a reaction gas comprised of precursor compounds of the magnetic material into a substantially enclosed reaction vessel. The reaction gas is energized by providing a source of microwave energy coupled to the substantially enclosed reaction vessel while maintaining the reaction gas pressure high enough to form the powdery microwave polymerizate, condensate, or precipitate, i.e., microwave snow. The solid particles of microwave snow have a morphology characterized as being one or more of (i) amorphous; (ii) microcrystalline; or (iii) polycrystalline. The grains within the solid have, at this stage of the process, an average grain characteristic dimension less than that of the heat treated magnetic material. In the second, or heat treating, stage of the process, the atomized solid particles are heat treated to form a solid material comprised of grains meeting at grain boundaries. The grains and grain boundaries have the morphology of the magnetic material.
摘要翻译：一种形成磁性材料的方法。磁性材料是固体颗粒，具有磁性参数，其特征在于：（1）最大磁能积（BH）max，大于15兆比特; 和（2）大于9千字节的剩磁。磁性材料通过两步固化，热处理工艺制备。凝固过程是通过生长微波粉或雪来实现的。通过将由磁性材料的前体化合物构成的反应气体引入基本上封闭的反应容器中来生长微波粉末或雪。反应气体通过提供耦合到基本上封闭的反应容器的微波能量来激励，同时保持反应气体压力足够高以形成粉末微波聚合物，冷凝物或沉淀物，即微波雪。微波雪的固体颗粒具有以下特征的形态：（i）无定形的一种或多种; （ii）微晶; 或（iii）多晶。在该过程的这个阶段，固体颗粒的平均颗粒特征尺寸小于热处理的磁性材料的平均颗粒特征尺寸。在该方法的第二阶段或热处理阶段中，雾化的固体颗粒被热处理以形成由晶界相遇的晶粒构成的固体材料。晶粒和晶界具有磁性材料的形态。

3. 发明授权

US4715891A Method of preparing a magnetic material 失效
标题翻译：磁性材料的制备方法
公开(公告)号：US4715891A
公开(公告)日：1987-12-29
申请号：US919935
申请日：1986-10-17
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , David D. Allred , Gregory DeMaggio
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , David D. Allred , Gregory DeMaggio
IPC分类号： H01F1/057 , H01F41/20 , H01F41/22 , H01F1/02
CPC分类号： H01F1/0574 , H01F1/0571 , H01F41/20 , H01F41/22
摘要： A method of forming a magnetic material. The magnetic material is a solid mass of grains, and has magnetic parameters characterized by : (1) a maximum magnetic energy product, (BH).sub.max, greater than 15 megagaussoersteds; and (2) a remanence greater than 9 kilogauss. The magnetic material is prepared by a two step solidification, heat treatment process. The solidification process is carried out by controlled vaporization of precursor elements of the alloy into an inert atmosphere, with subsequent controlled vapor phase condensation. This may be accomplished by vaporizing a precursor type alloy in a plasma torch, such as an argon torch, a hydrogen torch, or other electro-arc torch to form a particulate fine grain alloy. The resulting product of this alternative method is a particulate fine grain alloy. The solid particles have a morphology characterized as being one or more of (i) amorphous; (ii) microcrystalline; or (iii) polycrystalline. The grains within the solid have, at this stage of the process, an average grain characteristic dimension less than that of the heat treated magnetic material. In the second, or heat treating, stage of the process, the fine grain solid particles are heat treated to form a solid material comprised of grains meeting at grain boundaries. The grains and grain boundaries have the morphology of the magnetic material.
摘要翻译：一种形成磁性材料的方法。磁性材料是固体颗粒，具有磁性参数，其特征在于：（1）最大磁能积（BH）max，大于15兆比特; 和（2）大于9千字节的剩磁。磁性材料通过两步固化，热处理工艺制备。固化过程通过将合金的前体元素控制蒸发成惰性气氛来进行，随后控制气相冷凝。这可以通过在诸如氩炬，氢炬或其它电弧炬的等离子体焰炬中蒸发前体型合金来实现，以形成颗粒细晶粒合金。该替代方法的所得产物是颗粒细晶粒合金。固体颗粒具有以下特征的形态：（i）无定形的一种或多种; （ii）微晶; 或（iii）多晶。在该过程的这个阶段，固体颗粒的平均颗粒特征尺寸小于热处理的磁性材料的平均颗粒特征尺寸。在该方法的第二阶段或热处理阶段中，细晶粒固体颗粒被热处理以形成由晶界相遇的晶粒组成的固体材料。晶粒和晶界具有磁性材料的形态。

4. 发明授权

US4715890A Method of preparing a magnetic material 失效
标题翻译：磁性材料的制备方法
公开(公告)号：US4715890A
公开(公告)日：1987-12-29
申请号：US919934
申请日：1986-10-17
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , David D. Allred , Gregory Demaggio
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , David D. Allred , Gregory Demaggio
IPC分类号： B22F9/24 , H01F1/057 , C22C1/04
CPC分类号： H01F1/0573 , B22F9/24
摘要： A method of forming a magnetic material. The magnetic material is a solid mass of grains, and has magnetic parameters characterized by: (1) a maximum magnetic energy product, (BH).sub.max, greater than 15 megagaussoersteds; and (2) a remanence greater than 8 kilogauss. The magnetic material is prepared by a two step solidification, heat treatment process. The solidification process is carried out by: (a) forming a solution of reducible precursor compounds of the magnetic material; and (b) thereafter reducing the reducible, precursor compounds and forming a precipitate thereof. The precipitate has a morphology characterized as being one or more of (i) amorphous, (ii) microcrystalline, or (iii) polycrystalline. The grains within the precipitate have, at this stage of the process, an average grain characteristic dimension less than that of the heat treated magnetic material. In the second, or heat treating, stage of the process, the precipitated solid is heat treated to form a solid material comprised of grains meeting at grain boundaries. The grains and grain boundaries have the morphology of the magnetic material.
摘要翻译：一种形成磁性材料的方法。磁性材料是固体颗粒，具有磁性参数，其特征在于：（1）最大磁能积（BH）max，大于15兆比特; 和（2）大于8千瓦的剩磁。磁性材料通过两步固化，热处理工艺制备。凝固过程通过以下步骤进行：（a）形成磁性材料的可还原的前体化合物溶液; 和（b）然后减少可还原的前体化合物并形成其沉淀物。沉淀物具有表征为（i）无定形，（ii）微晶或（iii）多晶中的一种或多种的形态。在该过程的这个阶段，沉淀物中的晶粒的平均晶粒特征尺寸小于热处理的磁性材料的平均晶粒特征尺寸。在该方法的第二阶段或热处理阶段，对沉淀的固体进行热处理以形成由晶界相遇的晶粒组成的固体材料。晶粒和晶界具有磁性材料的形态。

5. 发明授权

US4664937A Method of depositing semiconductor films by free radical generation 失效
标题翻译：通过自由基生成沉积半导体膜的方法
公开(公告)号：US4664937A
公开(公告)日：1987-05-12
申请号：US854247
申请日：1986-04-21
申请人： Stanford R. Ovshinsky , David D. Allred , Lee Walter , Stephen J. Hudgens
发明人： Stanford R. Ovshinsky , David D. Allred , Lee Walter , Stephen J. Hudgens
IPC分类号： C23C16/511 , H01J37/32 , H01L21/205 , C23C11/02
CPC分类号： H01J37/3222 , C23C16/511 , H01J37/32192 , H01J37/32275 , H01L21/0242 , H01L21/02425 , H01L21/0245 , H01L21/02488 , H01L21/02505 , H01L21/02532 , H01L21/0262
摘要： A method of depositing a semiconductor alloy film onto a substrate by activating at least one group of free radicals and incorporating desired ones of the activated group into the film.
摘要翻译：通过激活至少一组自由基并将所需的活化基团并入膜中而将半导体合金膜沉积到基底上的方法。

6. 发明授权

US4504518A Method of making amorphous semiconductor alloys and devices using microwave energy 失效
标题翻译：制造使用微波能量的非晶半导体合金和器件的方法
公开(公告)号：US4504518A
公开(公告)日：1985-03-12
申请号：US605575
申请日：1984-04-30
申请人： Stanford R. Ovshinsky , David D. Allred , Lee Walter , Stephen J. Hudgens
发明人： Stanford R. Ovshinsky , David D. Allred , Lee Walter , Stephen J. Hudgens
IPC分类号： C23C16/50 , C23C16/511 , H01J37/32 , H01L21/205 , H01L29/161 , H01L31/04 , H01L31/20 , B05D3/06
CPC分类号： H01J37/32 , C23C16/511 , H01J37/3222 , H01J37/32275 , H01L21/0242 , H01L21/02425 , H01L21/0245 , H01L21/02488 , H01L21/02505 , H01L21/02532 , H01L21/0262 , H01L29/161 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A low pressure process for making amorphous semiconductor alloy films and devices at high deposition rates and high gas conversion efficiencies utilizes microwave energy to form a deposition plasma. The alloys exhibit high-quality electronic properties suitable for many applications including photovoltaic and electrophotographic applications.The process includes the steps of providing a source of microwave energy, coupling the microwave energy into a substantially enclosed reaction vessel containing the substrate onto which the amorphous semiconductor film is to be deposited, introducing into the vessel at least one reaction gas and evacuating the vessel to a low enough deposition pressure to deposit the film at high deposition rates with high reaction gas conversion efficiencies without any significant powder or polymeric inclusions. The microwave energy and the reaction gases form a glow discharge plasma within the vessel to deposit an amorphous semiconductor film from the reaction gases onto the substrate. The reaction gases can include silane (SiH.sub.4), silicon tetrafluoride (SiF.sub.4), silane and silicon tetrafluoride, silane and germane (GeH.sub.4), and silicon tetrafluoride and germane. The reaction gases can also include germane or germanium tetrafluoride (GeF.sub.4). To all of the foregoing, hydrogen (H.sub.2) can also be added. Dopants, either p-type or n-type can also be added to the reaction gases to form p-type or n-type alloy films, respectively. Also, band gap increasing elements such as carbon or nitrogen can be added in the form of, for example, methane or ammonia gas to widen the band gap of the alloys.
摘要翻译：用于制造非晶半导体合金膜和具有高沉积速率和高气体转换效率的器件的低压工艺利用微波能量来形成沉积等离子体。该合金表现出高质量的电子性能，适用于许多应用，包括光伏和电子照相应用。该方法包括以下步骤：提供微波能量源，将微波能量耦合到基本上封闭的反应容器中，所述反应容器含有要沉积非晶半导体膜的基底，将至少一个反应气体引入容器中并抽真空达到足够低的沉积压力，以高反应气体转化效率以高沉积速率沉积膜，而没有任何显着的粉末或聚合物夹杂物。微波能量和反应气体在容器内形成辉光放电等离子体，以将非晶半导体膜从反应气体沉积到衬底上。反应气体可以包括硅烷（SiH4），四氟化硅（SiF4），硅烷和四氟化硅，硅烷和锗烷（GeH4）以及四氟化硅和锗烷。反应气体还可以包括锗烷或四氟化锗（GeF 4）。对于所有这些，也可以加入氢（H 2）。也可以将p型或n型掺杂剂添加到反应气体中以分别形成p型或n型合金膜。此外，带隙增加元素如碳或氮可以以例如甲烷或氨气的形式加入，以加宽合金的带隙。

7. 发明授权

US4419533A Photovoltaic device having incident radiation directing means for total internal reflection 失效
标题翻译：具有用于全内反射的入射辐射导向装置的光伏装置
公开(公告)号：US4419533A
公开(公告)日：1983-12-06
申请号：US354285
申请日：1982-03-03
申请人： Wolodymyr Czubatyj , Rajendra Singh , Joachim Doehler , David D. Allred , Jaime M. Reyes
发明人： Wolodymyr Czubatyj , Rajendra Singh , Joachim Doehler , David D. Allred , Jaime M. Reyes
IPC分类号： H01L31/04 , H01L31/052 , H01L31/075 , H01L31/20 , H01L31/06
CPC分类号： H01L31/202 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： There is disclosed new and improved photovoltaic devices which provide increased short circuit currents and efficiencies over that previously obtainable from prior devices. The disclosed devices include incident radiation directing means for directing at least a portion of the incident light through the active region or regions thereof at angles sufficient to substantially confine the directed radiation in the devices. This allows substantially total utilization of photogenerated electron-hole pairs. Further, because the light is directed through the active region or regions at such angles, the active regions can be made thinner to also increase collection efficiencies.The incident radiation directors can be random surface or bulk reflectors to provide random scattering of the light, or periodic surface or bulk reflector to provide selective scattering of the light.While the present invention is applicable to photovoltaic devices formed from any type of semiconductor material, as for example, crystalline, polycrystalline, or amorphous semiconductor alloys or any combination thereof, disclosure herein is primarily directed to photovoltaic devices formed from amorphous silicon alloys preferably incorporating fluorine as a density of states reducing element. The disclosure is also directed to, without limitation, photovoltaic devices of the p-i-n configuration, both as single cells and multiple cells arranged in tandem.
摘要翻译：公开了新的和改进的光伏器件，其提供比以前从现有器件获得的更高的短路电流和效率。所公开的装置包括入射辐射导向装置，用于将入射光的至少一部分引导通过其有效区域或其区域，其角度足以基本上限制装置中的定向辐射。这样可以大幅度地利用光生电子 - 空穴对。此外，由于光以这样的角度被引导通过有源区域或者区域，所以可以使有源区域更薄以增加收集效率。入射辐射导向器可以是随机表面或体反射器，以提供光的随机散射，或周期性表面或体反射器以提供光的选择性散射。尽管本发明可应用于由任何类型的半导体材料形成的光电器件，例如晶体，多晶或非晶半导体合金或其任何组合，但是本文的公开内容主要涉及由非晶硅合金形成的光伏器件，优选掺入氟作为减少元素的状态密度。本公开还涉及但不限于p-i-n配置的光伏器件，既作为串联排列的单个单元和多个单元。

8. 发明授权

US5485499A High throughput reflectivity and resolution x-ray dispersive and reflective structures for the 100 eV to 5000 eV energy range and method of making the devices 失效
标题翻译：用于100 eV至5000 eV能量范围的高通量反射率和分辨率x射线色散和反射结构以及制造器件的方法
公开(公告)号：US5485499A
公开(公告)日：1996-01-16
申请号：US286693
申请日：1994-08-05
申请人： Hans K. Pew , David D. Allred
发明人： Hans K. Pew , David D. Allred
IPC分类号： G03F7/20 , G21K1/06 , G01T1/32
CPC分类号： B82Y10/00 , G03F7/70233 , G21K1/062
摘要： X-ray dispersive and reflective structures utilizing special materials which exhibit improved performance in the specific ranges of interest. The structures are formed of alternating thin layers of uranium, uranium compound or uranium alloy and another spacer material consisting of elements or compounds with low absorptance chosen to match the wavelength of interest. These low index of refraction elements or compounds are those best suited for water window microscopy and nitrogen analysis, or are similar elements or compounds best suited for carbon analysis, boron analysis, and x-ray lithography. The structures are constructed using standard thin layer deposition techniques such as evaporation, sputtering, and CVD, or by novel methods which allow thinner and smoother layers to be deposited.
摘要翻译：使用特殊材料的X射线分散和反射结构，其在特定的感兴趣范围内表现出改善的性能。这些结构由交替的铀，铀化合物或铀合金薄层形成，另外由选择具有低吸收率的元素或化合物组成的隔离材料构成，以匹配感兴趣的波长。这些低折射率元件或化合物是最适合水窗显微镜和氮分析的那些，或者是最适合于碳分析，硼分析和x射线光刻的相似元件或化合物。使用诸如蒸发，溅射和CVD的标准薄层沉积技术或通过允许沉积更薄和更平滑的层的新方法来构造结构。

9. 发明授权

US5458084A X-ray wave diffraction optics constructed by atomic layer epitaxy 失效
$X-ray wave diffraction optics constructed by atomic layer epitaxy$
标题翻译：由原子层外延构成的X射线衍射光学元件
公开(公告)号：US5458084A
公开(公告)日：1995-10-17
申请号：US164362
申请日：1993-12-09
申请人： James M. Thorne , James K. Shurtleff , David D. Allred , Raymond T. Perkins
发明人： James M. Thorne , James K. Shurtleff , David D. Allred , Raymond T. Perkins
IPC分类号： G03F1/24 , G21K1/06 , C30B25/16
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G21K1/062 , G21K2201/061
摘要： X-ray wave diffraction devices are constructed using atomic layer epetaxy. A crystalline substrate is prepared with one or more surface areas on which multiple pairs of layers of material are to be deposited. These layers are then formed by atomic layer epetaxy on the surface areas of the substrate, one on top of another, with the material of each layer of each pair being selected to have a different index of refraction from that of the material of the other layer of each pair. The layers are formed so that the thickness of each layer of a pair is substantially the same as that of the corresponding layer of every other pair and so that x-ray waves impinging on the layers may be reflected therefrom. Layer pairs having a thickness of about 20 angstroms or less are formed on the substrate.
摘要翻译：使用原子层epetaxy构造X射线波衍射装置。制备具有一个或多个表面区域的晶体衬底，在多个表面区域上沉积多对材料层。这些层然后通过原子层外延在衬底的表面区域上形成，一个在另一个的顶部上，每对的每个层的材料被选择为具有与另一层的材料的折射率不同的折射率的每一对。这些层被形成为使得每一层的每个层的厚度与每隔一对的相应层的厚度基本相同，并且使得撞击在层上的X射线波可能被反射。在基板上形成具有约20埃或更小厚度的层对。

10. 发明授权

US4792501A Multilayered article including crystallization inhibiting layer and method for fabricating same 失效
标题翻译：包含结晶抑制层的多层制品及其制造方法
公开(公告)号：US4792501A
公开(公告)日：1988-12-20
申请号：US135772
申请日：1987-12-21
申请人： David D. Allred , Jesus Gonzalez-Hernandez , On Van Nguyen
发明人： David D. Allred , Jesus Gonzalez-Hernandez , On Van Nguyen
IPC分类号： G03G5/082 , G11B7/243 , G11B7/257 , H01L45/00 , B32B9/00 , B32B19/00
CPC分类号： G11B7/2433 , G03G5/082 , G11B7/2578 , H01L45/00 , G11B2007/24312 , G11B2007/24316 , G11B2007/25708 , G11B2007/2571 , G11B2007/25713 , G11B2007/25715 , Y10S428/913 , Y10T428/261
摘要： A multilayered article includes at least one periodically repeating set including a layer of amorphous crystallizable material and a layer of crystallization inhibiting material in generally superposed relationship. The layer of crystallizable material has its crystallization temperature raised by the presence of the inhibiting layer. Also disclosed are methods for the fabrication of the multilayered article.
摘要翻译：多层制品包括至少一个周期性重复的组合，其包括非晶可结晶材料层和通常重叠关系的结晶抑制材料层。可结晶材料层的结晶温度由于抑制层的存在而升高。还公开了制造多层制品的方法。

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