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1. 发明授权

US08471282B2 Passivation for a semiconductor light emitting device 有权
标题翻译：钝化半导体发光器件
公开(公告)号：US08471282B2
公开(公告)日：2013-06-25
申请号：US12795272
申请日：2010-06-07
申请人： Frederic S. Diana , Henry Kwong-Hin Choy , Qingwei Mo , Serge I. Rudaz , Frank L. Wei , Daniel A. Steigerwald
发明人： Frederic S. Diana , Henry Kwong-Hin Choy , Qingwei Mo , Serge I. Rudaz , Frank L. Wei , Daniel A. Steigerwald
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/08 , H01L33/385 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/52 , H01L33/54 , H01L33/56 , H01L2933/0025 , H01L2933/005
摘要： In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.
摘要翻译：在本发明的实施例中，钝化层设置在包括设置在n型区域和p型区域之间的发光层的半导体结构的一侧上。配置成附着到底部填充物的材料设置在半导体结构的蚀刻表面上。

2. 发明申请

US20110057569A1 ZENER DIODE PROTECTION NETWORK IN SUBMOUNT FOR LEDS CONNECTED IN SERIES 有权
标题翻译： ZENER二极管保护网络连接在LED系列中
公开(公告)号：US20110057569A1
公开(公告)日：2011-03-10
申请号：US12556054
申请日：2009-09-09
申请人： Yajun WEI , William D. COLLINS III , Daniel A. STEIGERWALD
发明人： Yajun WEI , William D. COLLINS III , Daniel A. STEIGERWALD
IPC分类号： H05B37/00 , H01L21/00 , H01L33/00
CPC分类号： H05B33/083 , H01L25/0753 , H01L25/167 , H01L2224/16225 , H01L2924/0002 , H05B33/089 , Y02B20/341 , H01L2924/00
摘要： A transient voltage suppressor circuit is disclosed for a plurality (N) of LEDs connected in series. Only one zener diode is created for connection to each node between LEDs, and a pair of zener diodes (the “end” zener diodes) are connected to the two pins (anode and cathode pads) of the series string. Therefore, only N+1 zener diodes are used. The end zener diodes (Q1 and Qn+1) effectively create back-to-back zener diodes across the two pins since the zener diodes share a common p+ substrate. The n+ regions of the end zener diodes Q1 and Qn+1 have the highest breakdown voltage requirement and must be placed relatively far apart. Adjacent n+ regions of the intermediate zener diodes have a much lower breakdown voltage requirement so may be located close together. Since there are fewer zener diodes and their spacings may be small, the zener diodes may be placed within a very small footprint or can be larger for better suppressor performance.
摘要翻译：公开了串联连接的多个（N）个LED的瞬态电压抑制电路。只有一个齐纳二极管用于连接到LED之间的每个节点，一对齐纳二极管（“端”齐纳二极管）连接到串联串的两个引脚（阳极和阴极焊盘）。因此，仅使用N + 1齐纳二极管。齐纳二极管（Q1和Qn + 1）有效地在两个引脚之间产生背靠背齐纳二极管，因为齐纳二极管共享一个共同的p +衬底。末端齐纳二极管Q1和Qn + 1的n +区域具有最高的击穿电压要求，并且必须放置得相对较远。中间齐纳二极管的相邻n +区域具有低得多的击穿电压要求，因此可以靠近在一起。由于齐纳二极管较少，它们的间距可能较小，所以齐纳二极管可能放置在非常小的占地面积内，或者可以更大以获得更好的抑制器性能。

3. 发明申请

US20090250713A1 Reflective Contact for a Semiconductor Light Emitting Device 审中-公开
标题翻译：半导体发光器件的反射触点
公开(公告)号：US20090250713A1
公开(公告)日：2009-10-08
申请号：US12098381
申请日：2008-04-04
申请人： Henry Kwong-Hin Choy , Daniel A. Steigerwald
发明人： Henry Kwong-Hin Choy , Daniel A. Steigerwald
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L29/452 , H01L33/32
摘要： A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A contact is formed on the semiconductor structure, the contact comprising a reflective metal in direct contact with the semiconductor structure and an additional metal or semi-metal disposed within the reflective metal. In some embodiments, the additional metal or semi-metal is a material with higher electronegativity than the reflective metal. The presence of the high electronegativity material in the contact may increase the overall electronegativity of the contact, which may reduce the forward voltage of the device. In some embodiments, an oxygen-gathering material is included in the contact.
摘要翻译：发光器件包括包括设置在n型区域和p型区域之间的发光层的半导体结构。在半导体结构上形成接触，所述触点包括与半导体结构直接接触的反射金属和设置在反射金属内的附加金属或半金属。在一些实施例中，附加金属或半金属是具有比反射金属更高的电负性的材料。接触中高电负性材料的存在可能会增加触头的整体电负性，这可能会降低器件的正向电压。在一些实施例中，接触中包括聚集氧的材料。

4. 发明授权

US07345323B2 Formation of Ohmic contacts in III-nitride light emitting devices 有权
标题翻译：在III族氮化物发光器件中形成欧姆接触
公开(公告)号：US07345323B2
公开(公告)日：2008-03-18
申请号：US11095854
申请日：2005-03-30
申请人： Werner K. Goetz , Michael D. Camras , Xiaoping Chen, legal representative , Gina L. Christenson , R. Scott Kern , Chihping Kuo , Paul Scott Martin , Daniel A. Steigerwald
发明人： Changhua Chen
IPC分类号： H02L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/0425 , H01S5/32341 , H01L2924/00
摘要： P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ω cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
摘要翻译： GaN基发光器件的P型层优化用于形成与金属的欧姆接触。在第一实施例中，在p型导电层和金属接触之间形成电阻率大于或等于约7Ωcm的p型GaN过渡层。在第二实施例中，p型过渡层是任何III-V半导体。在第三实施例中，p型过渡层是超晶格。在第四实施例中，形成具有不同组成和不同浓度的掺杂剂的单一p型层。

5. 发明授权

US06946685B1 Light emitting semiconductor method and device 有权
标题翻译：发光半导体方法及器件
公开(公告)号：US06946685B1
公开(公告)日：2005-09-20
申请号：US09652194
申请日：2000-08-31
申请人： Daniel A. Steigerwald , Michael J. Ludowise , Steven A. Maranowski , Serge L. Rudaz , Jerome C. Bhat
发明人： Daniel A. Steigerwald , Michael J. Ludowise , Steven A. Maranowski , Serge L. Rudaz , Jerome C. Bhat
IPC分类号： H01L29/22 , H01L33/32 , H01L33/40
CPC分类号： H01L33/405 , H01L33/32
摘要： Silver electrode metallization in light emitting devices is subject to electrochemical migration in the presence of moisture and an electric field. Electrochemical migration of the silver metallization to the pn junction of the device results in an alternate shunt path across the junction, which degrades efficiency of the device. In accordance with a form of this invention, a migration barrier is provided for preventing migration of metal from at least one of the electrodes onto the surface of the semiconductor layer with which the electrode is in contact.
摘要翻译：发光器件中的银电极金属化在水分和电场的存在下经历电化学迁移。银金属化物到器件的pn结的电化学迁移导致跨接头的交替分流路径，这降低了器件的效率。根据本发明的形式，提供了一种迁移屏障，用于防止金属从至少一个电极移动到与电极接触的半导体层的表面上。

6. 发明授权

US06946309B2 III-Phosphide and III-Arsenide flip chip light-emitting devices 有权
标题翻译： III型磷化物和III型砷化物倒装芯片发光器件
公开(公告)号：US06946309B2
公开(公告)日：2005-09-20
申请号：US10867936
申请日：2004-06-14
申请人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
发明人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
IPC分类号： H01L33/02 , H01L33/08 , H01L33/14 , H01L33/20 , H01L21/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/14 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/05611 , H01L2924/00014 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684
摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.
摘要翻译：发光半导体器件包括包括有源区的层叠层。有源区包括选自III-磷化物，III-砷化物及其合金的半导体。对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。

7. 发明授权

US06828596B2 Contacting scheme for large and small area semiconductor light emitting flip chip devices 有权
标题翻译：大面积和小面积半导体发光倒装芯片器件的接触方案
公开(公告)号：US06828596B2
公开(公告)日：2004-12-07
申请号：US10172311
申请日：2002-06-13
申请人： Daniel A. Steigerwald , Jerome C. Bhat , Michael J. Ludowise
发明人： Daniel A. Steigerwald , Jerome C. Bhat , Michael J. Ludowise
IPC分类号： H01L3300
CPC分类号： H01L33/382 , H01L33/08 , H01L33/20 , H01L33/486 , H01L2224/48247
摘要： In accordance with the invention, a light emitting device includes a substrate, a layer of first conductivity type overlying the substrate, a light emitting layer overlying the layer of first conductivity type, and a layer of second conductivity type overlying the light emitting layer. A plurality of vias are formed in the layer of second conductivity type, down to the layer of first conductivity type. The vias may be formed by, for example, etching, ion implantation, or selective growth of the layer of second conductivity type. A set of first contacts electrically contacts the layer of first conductivity type through the vias. A second contact electrically contacts the layer of second conductivity type. In some embodiments, the area of the second contact is at least 75% of the area of the device. In some embodiments, the vias are between 2 and 100 microns wide and spaced between 5 and 1000 microns apart.
摘要翻译：根据本发明，发光器件包括衬底，覆盖衬底的第一导电类型的层，覆盖第一导电类型的层的发光层和覆盖发光层的第二导电类型的层。在第二导电类型的层中形成多个通孔，直到第一导电类型的层。通孔可以通过例如第二导电类型的蚀刻，离子注入或选择性生长来形成。一组第一触点通过通孔与第一导电类型的层电接触。第二接触件电接触第二导电类型的层。在一些实施例中，第二触点的面积为器件面积的至少75％。在一些实施例中，通孔的宽度为2至100微米，间隔5至1000微米。

8. 发明授权

US06730940B1 Enhanced brightness light emitting device spot emitter 有权
标题翻译：增强型亮度发光器件点发射器
公开(公告)号：US06730940B1
公开(公告)日：2004-05-04
申请号：US10283737
申请日：2002-10-29
申请人： Frank M. Steranka , Daniel A. Steigerwald , Matthijs H. Keuper
发明人： Frank M. Steranka , Daniel A. Steigerwald , Matthijs H. Keuper
IPC分类号： H01L3300
CPC分类号： H01L33/58 , H01L33/46 , H01L33/60
摘要： The amount of usefully captured light in an optical system may be increased by concentrating light in a region where it can be collected by the optical system. A light emitting device may include a substrate and a plurality of semiconductor layers. In some embodiments, a reflective material overlies a portion of the substrate and has an opening through which light exits the device. In some embodiments, reflective material overlies a portion of a surface of the semiconductor layers and has an opening through which light exits the device. In some embodiments, a light emitting device includes a transparent member with a first surface and an exit surface. At least one light emitting diode is disposed on the first surface. The transparent member is shaped such that light emitted from the light emitting diode is directed toward the exit surface.
摘要翻译：光学系统中有效捕获的光的量可以通过将光集中在可由光学系统收集的区域中来增加。发光器件可以包括衬底和多个半导体层。在一些实施例中，反射材料覆盖在衬底的一部分上并且具有光从该器件离开的开口。在一些实施例中，反射材料覆盖在半导体层的表面的一部分上并且具有光从该器件离开的开口。在一些实施例中，发光器件包括具有第一表面和出射表面的透明构件。至少一个发光二极管设置在第一表面上。透明构件被成形为使得从发光二极管发射的光朝向出射表面。

9. 发明授权

US06521914B2 III-Nitride Light-emitting device with increased light generating capability 有权
标题翻译： III型氮化物具有增加的发光能力的发光装置
公开(公告)号：US06521914B2
公开(公告)日：2003-02-18
申请号：US10112175
申请日：2002-03-29
申请人： Michael R Krames , Daniel A. Steigerwald , Fred A. Kish, Jr. , Pradeep Rajkomar , Jonathan J. Wierer, Jr. , Tun S Tan
发明人： Michael R Krames , Daniel A. Steigerwald , Fred A. Kish, Jr. , Pradeep Rajkomar , Jonathan J. Wierer, Jr. , Tun S Tan
IPC分类号： H01L29267
CPC分类号： H01L33/62 , G09G2360/148 , H01L25/167 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/641 , H01L33/647 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/05572 , H01L2224/14 , H01L2924/0002 , H01L2924/00
摘要： The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.
摘要翻译：本发明是具有增强的总发光能力的反向III族氮化物发光器件（LED）。大面积器件具有插入p电极金属化以提供低串联电阻的n电极。 p电极金属化是不透明的，高反射性的，并且提供优异的电流扩散。 LED有源区的峰值发射波长处的p电极每次吸收小于入射光的25％。可以使用底座来提供LED管芯和封装之间的电连接和热连接。底座材料可以是Si以提供诸如电压一致性限制操作的电子功能。整个设备，包括LED-submount接口，设计用于低热阻，以实现高电流密度操作。最后，器件可以包括高折射率（n> 1.8）的覆盖层。

10. 发明授权

US08400064B2 Zener diode protection network in submount for LEDs connected in series 有权
标题翻译：齐纳二极管保护网络用于LED串联连接
公开(公告)号：US08400064B2
公开(公告)日：2013-03-19
申请号：US12556054
申请日：2009-09-09
申请人： Yajun Wei , William D. Collins, III , Daniel A. Steigerwald
发明人： Yajun Wei , William D. Collins, III , Daniel A. Steigerwald
IPC分类号： H05B37/00 , H05B37/02 , H05B39/00 , H05B39/04 , H05B41/00 , H05B41/36 , G05F1/00
CPC分类号： H05B33/083 , H01L25/0753 , H01L25/167 , H01L2224/16225 , H01L2924/0002 , H05B33/089 , Y02B20/341 , H01L2924/00
摘要： A transient voltage suppressor circuit is disclosed for a plurality (N) of LEDs connected in series. Only one zener diode is created for connection to each node between LEDs, and a pair of zener diodes (the “end” zener diodes) are connected to the two pins (anode and cathode pads) of the series string. Therefore, only N+1 zener diodes are used. The end zener diodes (Q1 and Qn+1) effectively create back-to-back zener diodes across the two pins since the zener diodes share a common p+ substrate. The n+ regions of the end zener diodes Q1 and Qn+1 have the highest breakdown voltage requirement and must be placed relatively far apart. Adjacent n+ regions of the intermediate zener diodes have a much lower breakdown voltage requirement so may be located close together. The zener diodes may be placed within a very small footprint or can be larger for better suppressor performance.
摘要翻译：公开了串联连接的多个（N）个LED的瞬态电压抑制电路。只有一个齐纳二极管用于连接到LED之间的每个节点，并且一对齐纳二极管（最终齐纳二极管）连接到串联串的两个引脚（阳极和阴极焊盘）。因此，仅使用N + 1齐纳二极管。齐纳二极管（Q1和Qn + 1）有效地在两个引脚之间产生背靠背齐纳二极管，因为齐纳二极管共享一个共同的p +衬底。末端齐纳二极管Q1和Qn + 1的n +区域具有最高的击穿电压要求，并且必须放置得相对较远。中间齐纳二极管的相邻n +区域具有低得多的击穿电压要求，因此可以靠近在一起。齐纳二极管可以放置在非常小的占位面积中，或者可以更大以获得更好的抑制器性能。

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