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    • 6. 发明授权
    • Optical fiber array for preventing flow of glue between fibers and waveguide
    • 用于防止光纤和波导之间胶水流动的光纤阵列
    • US06526204B1
    • 2003-02-25
    • US09713117
    • 2000-11-15
    • David W SherrerDan A SteinbergMindaugas F Dautartas
    • David W SherrerDan A SteinbergMindaugas F Dautartas
    • G02B636
    • G02B6/32G02B6/30G02B6/3636G02B6/3652G02B6/3692
    • An optical fiber array having wick stop grooves in a front face of the array. The wick stop grooves control the movement of liquid adhesive (e.g. UV curable adhesive, solder, sol-gel). Particularly, the wick stop grooves prevent liquid adhesive from flowing between the optical fibers in the array and waveguides of an integrated optic chip. Adhesives disposed in the fiber-waveguide optical path can degrade the performance of optical devices. The wick stop grooves can be cut with a dicing saw, or chemically etched (wet or dry), and can have a wide variety of patterns (e.g., straight lines, circles). In any case, the wick stop grooves must prevent the flow of liquid adhesive between the fibers and waveguides. Alternatively, the wick stop grooves are disposed in an edge of the integrated optic chip. Also, the wick stop grooves can be disposed on the front face of other microoptical devices such as filters and lenslet arrays.
    • 一种在阵列前表面具有芯阻止凹槽的光纤阵列。 芯吸槽控制液体粘合剂(例如UV可固化粘合剂,焊料,溶胶 - 凝胶)的运动。 特别地,灯芯止动槽防止液体粘合剂在阵列中的光纤和集成光学芯片的波导之间流动。 布置在光纤波导光路中的粘合剂可以降低光学器件的性能。 灯芯停止槽可以用切割锯切割,或者化学蚀刻(湿或干),并且可以具有多种图案(例如,直线,圆形)。 在任何情况下,芯阻止槽必须防止纤维和波导之间的液体粘合剂的流动。 或者,灯芯止动槽设置在集成光学芯片的边缘。 此外,灯芯停止槽可以设置在其他微光学装置的前表面上,例如滤光器和小透镜阵列。
    • 8. 发明授权
    • Multi-level optical structure and method of manufacture
    • 多级光学结构及制造方法
    • US07255978B2
    • 2007-08-14
    • US09858999
    • 2001-05-16
    • Dan A. SteinbergDavid W. Sherrer
    • Dan A. SteinbergDavid W. Sherrer
    • G03F7/26
    • G02B6/30G02B6/12004G02B6/136G02B6/138G03F1/38G03F1/50G03F1/60Y10T428/26
    • A multi-level optical device includes a substrate having a baseline level. At least one feature is disposed at a level above the baseline level. At least one feature is disposed at a level below the baseline level, or in the feature above the baseline level is located at a distance apart from the feature below the baseline level. The distance has an accuracy inn the range of approximately ±0.05 μm to less than approximately ±1.0 μm.A method of fabricating an optical device includes forming at least one feature at a level of above a baseline level of a substrate; and forming at least one feature at a baseline level below the baseline level of the substrate, wherein the feature at a level above the baseline level and the feature at a level below the baseline level are patterned in a single-mask step using a multi-level mask.
    • 多级光学器件包括具有基准电平的衬底。 至少一个特征被设置在高于基线水平的水平上。 至少一个特征被布置在低于基准水平的水平处,或者在基线水平以上的特征中位于距离基准水平以下的特征的距离处。 该距离的精度范围约为±0.05μm至小于约±1.0μm。 一种制造光学器件的方法包括在衬底的基线水平以上的水平上形成至少一个特征; 以及在低于所述基底的基线水平的基线水平处形成至少一个特征,其中,在所述基线水平以上的水平处的所述特征和所述基线水平以下的水平处的特征在单掩模步骤中被图案化, 级别面具。
    • 10. 发明授权
    • Etching process for micromachining materials and devices fabricated thereby
    • 用于由其制造的微加工材料和器件的蚀刻工艺
    • US07198727B2
    • 2007-04-03
    • US11152671
    • 2005-06-14
    • Dan A. SteinbergLarry J. Rasnake
    • Dan A. SteinbergLarry J. Rasnake
    • B44C1/22
    • G02B6/3636G02B6/136G02B6/3652G02B6/3692G02B6/4206G02B6/423G02B6/4234G02B2006/12176
    • The present invention provides an optical microbench having intersecting structures etched into a substrate. In particular, microbenches in accordance with the present invention include structures having a planar surfaces formed along selected crystallographic planes of a single crystal substrate. Two of the structures provided are an etch-stop pit and an anisotropically etched feature disposed adjacent the etch-stop pit. At the point of intersection between the etch-stop pit and the anisotropically etched feature the orientation of the crystallographic planes is maintained. The present invention also provides a method for micromachining a substrate to form an optical microbench. The method comprises the steps of forming an etch-stop pit and forming an anisotropically etched feature adjacent the etch-stop pit. The method may also comprise coating the surfaces of the etch-stop pit with an etch-stop layer.
    • 本发明提供一种具有蚀刻到衬底中的相交结构的光学微型台。 特别地,根据本发明的微型薄片包括具有沿着单晶衬底的选定结晶面形成的平面的结构。 提供的两个结构是蚀刻停止凹坑和邻近蚀刻停止凹坑设置的各向异性蚀刻特征。 在蚀刻停止凹坑和各向异性蚀刻特征之间的交点处,维持结晶平面的取向。 本发明还提供了一种用于微加工基板以形成光学微型台的方法。 该方法包括以下步骤:形成蚀刻停止凹坑并在蚀刻停止凹坑附近形成各向异性蚀刻的特征。 该方法还可以包括用蚀刻停止层涂覆蚀刻停止凹坑的表面。