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    • 2. 发明授权
    • Digital garment using embroidery technology and fabricating method thereof
    • 数字服装采用刺绣技术及其制作方法
    • US08701578B2
    • 2014-04-22
    • US12919432
    • 2009-02-12
    • Gi Soo ChungDae Hoon LeeJae Sang An
    • Gi Soo ChungDae Hoon LeeJae Sang An
    • D05C17/00
    • A41D1/005D05C7/00D05D2303/00
    • Disclosed is a digital garment using embroidery technology. In the digital garment, a digital embroidery pattern is formed on a common garment to provide a communication path, an antenna pattern, etc. The digital garment comprises a garment made of a textile and having one side and the other side opposite to each other, a digital embroidery pattern formed along the inner or outer surface of the garment using embroidery technology to provide a communication path to the garment, a sensor attached to the garment and electrically connected to the digital embroidery pattern to convert physical signals to electrical signals, an arithmetic unit attached to the garment and electrically connected to the digital embroidery pattern to process the electrical signals inputted from the sensor, and a communication module attached to the garment and electrically connected to the digital embroidery pattern to perform wireless communication. Further disclosed is a method for fabricating the digital garment using embroidery technology.
    • 披露的是使用刺绣技术的数字服装。 在数字服装中,数字刺绣图案形成在普通的衣服上以提供通信路径,天线图案等。数字服装包括由纺织品制成的衣服,并且具有彼此相对的一侧和另一侧, 使用刺绣技术沿着衣服的内表面或外表面形成的数字刺绣图案,以提供到衣服的通信路径,附接到衣服并电连接到数字刺绣图案以将物理信号转换为电信号的传感器,算术 连接到衣服并电连接到数字刺绣图案以处理从传感器输入的电信号的单元,以及连接到衣服并电连接到数字刺绣图案以执行无线通信的通信模块。 另外公开了使用刺绣技术制造数字服装的方法。
    • 3. 发明授权
    • Plasma reaction apparatus, plasma reaction method using the same, plasma reaction method of persistent gas, and apparatus for decreasing NOx by occlusion catalyst
    • 等离子体反应装置,使用其的等离子体反应方法,持续气体的等离子体反应方法,以及通过堵塞催化剂降低NOx的装置
    • US08568662B2
    • 2013-10-29
    • US11992077
    • 2006-10-09
    • Dae Hoon LeeKwan Tae KimYoung Hoon SongMin Suk ChaJae Ok LeeSeock Joon Kim
    • Dae Hoon LeeKwan Tae KimYoung Hoon SongMin Suk ChaJae Ok LeeSeock Joon Kim
    • B01J19/08
    • B01J19/088B01D53/32B01D53/8631B01D2257/404B01D2259/818B01J2219/0809B01J2219/0824B01J2219/083B01J2219/0869B01J2219/0871B01J2219/0883H05H1/48
    • The present invention relates to a plasma reaction apparatus and a plasma reaction method using the same. More particularly, the present invention relates to a plasma reaction apparatus which is applied to the reforming of fuel by generating rotating arc plasma and using the rotating arc being generated, the chemical treatment of a persistent gas, and the apparatus for decreasing NOx by an occlusion catalyst, and a plasma reaction method using the same. For this purpose, a raw material for a reaction is allowed to flow through an inflow hole in a swirl structure so that the raw material forms a rotating flow to progress. Accordingly, the raw material is sufficiently reacted in a plasma reaction space of a restrictive volume, and a high temperature plasma reaction is more promptly performed. Furthermore, a plasma reaction zone is expanded, prior to discharge, by a broad area chamber formed as the width of an upper part of a furnace is expanded, and plasma being generated is expanded and stayed as a pointed end spaced from an electrode at a predetermined interval is formed at an expanded end. Accordingly, the present invention relates to a plasma reaction apparatus and a plasma reaction method using the same, a plasma reaction method of a persistent gas, and an apparatus decreasing NOx by an occlusion catalyst, all of which are capable of excluding the discontinuity of the plasma reaction zone.
    • 本发明涉及一种等离子体反应装置及使用其的等离子体反应方法。 更具体地,本发明涉及一种等离子体反应装置,其通过产生旋转电弧等离子体并利用所产生的旋转电弧,持续气体的化学处理和通过闭塞来降低NOx的装置应用于燃料重整 催化剂和使用其的等离子体反应方法。 为此,允许用于反应的原料流过旋流结构中的流入孔,使得原料形成旋转流动进行。 因此,原料在限制体积的等离子体反应空间中充分反应,更迅速地进行高温等离子体反应。 此外,等离子体反应区在放电之前被扩大,当炉的上部的宽度被扩大时形成的宽区域,并且产生的等离子体膨胀并且作为与电极间隔开的尖端保持 在扩展端形成预定间隔。 因此,本发明涉及使用其的等离子体反应装置及其等离子体反应方法,持续气体的等离子体反应方法以及通过阻塞催化剂减少NOx的装置,所有这些都能够排除不均匀性 等离子体反应区。
    • 9. 发明授权
    • Wind power generating system
    • 风力发电系统
    • US06672522B2
    • 2004-01-06
    • US10084196
    • 2002-02-28
    • Koo Shik LeeDae Hoon Lee
    • Koo Shik LeeDae Hoon Lee
    • F03D500
    • F03D5/04Y02E10/70
    • Disclosed is a wind power generating system. The system comprises moving bodies connected one with another by connectors and repeatedly circulated on a rail of an endless track; sail devices rotatably mounted to the moving bodies and exposed to wind, each sail device having a sail and a mast and including a rotating mechanism for rotating the mast; geared members affixed to one sides of the moving bodies; a generator having a gear which is meshed with the geared members and thereby rotated to allow the generator to generate electricity; direction changing devices located at both turnaround portions of the rail; and sail direction adjusting devices each for adjusting a direction of the sail in conformity with a direction of wind stream.
    • 公开了一种风力发电系统。 该系统包括通过连接器彼此连接并且在循环轨道的轨道上重复循环的移动体; 帆式装置可旋转地安装到移动体并暴露于风中,每个帆装置具有帆和桅杆,并且包括用于旋转桅杆的旋转机构; 固定在移动体一侧的齿轮构件; 发电机,其具有与齿轮构件啮合的齿轮,从而旋转以允许发电机发电; 位于轨道的两个转向部分的方向改变装置; 和风向调整装置,每个用于根据风流的方向调节帆的方向。
    • 10. 发明授权
    • Method for forming a fine pattern in a semiconductor device
    • 在半导体器件中形成精细图案的方法
    • US6156668A
    • 2000-12-05
    • US294874
    • 1999-04-20
    • Hyung Gi KimMyung Soo KimCheol Kyu BokKi Ho BaikDae Hoon LeeJin Woong KimByung Jun Park
    • Hyung Gi KimMyung Soo KimCheol Kyu BokKi Ho BaikDae Hoon LeeJin Woong KimByung Jun Park
    • H01L21/302G03F7/38H01L21/00
    • G03F7/38
    • A method for forming a fine pattern in a semiconductor device removes roughness from a pattern produced in a fine pattern fabrication process using a silylation process as being one kind of a TSI process, eliminates smoothly a photosensitive film residue caused by a residue silylation layer remained on a-non-pattern area, and increases a margin of a lithography process. To achieve the foregoing, the method performs an etching process with a fluorine/oxygen mixture gas so as to remove a thin oxide film being formed on the non-pattern area after a silylation process, enables an edge portion of a silylation region to be planarized so as to prevent the pattern from becoming rough, and forms a photosensitive film pattern by developing the photosensitive film with oxygen plasma. Thereafter, the photosensitive film residue is etched again with a mixture gas of fluorine/oxygen, thereby increasing a fabrication margin of the fine pattern.
    • 在半导体器件中形成精细图案的方法从使用硅烷化工艺的精细图案制造工艺中产生的图案中除去粗糙度作为一种TSI工艺,平滑地消除由剩余的甲硅烷基层残留的感光性膜残留物 非图案区域,并增加了光刻工艺的余量。 为了实现上述目的,该方法用氟/氧混合气体进行蚀刻处理,以便在甲硅烷化过程之后除去在非图案区域上形成的薄氧化膜,使甲硅烷基化区域的边缘部分平坦化 以防止图案变粗糙,并且通过用氧等离子体显影感光膜形成感光膜图案。 此后,用氟/氧的混合气体再次蚀刻感光性膜残渣,从而增加精细图案的制造余量。