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    • 1. 发明授权
    • Method for forming a fine pattern in a semiconductor device
    • 在半导体器件中形成精细图案的方法
    • US6156668A
    • 2000-12-05
    • US294874
    • 1999-04-20
    • Hyung Gi KimMyung Soo KimCheol Kyu BokKi Ho BaikDae Hoon LeeJin Woong KimByung Jun Park
    • Hyung Gi KimMyung Soo KimCheol Kyu BokKi Ho BaikDae Hoon LeeJin Woong KimByung Jun Park
    • H01L21/302G03F7/38H01L21/00
    • G03F7/38
    • A method for forming a fine pattern in a semiconductor device removes roughness from a pattern produced in a fine pattern fabrication process using a silylation process as being one kind of a TSI process, eliminates smoothly a photosensitive film residue caused by a residue silylation layer remained on a-non-pattern area, and increases a margin of a lithography process. To achieve the foregoing, the method performs an etching process with a fluorine/oxygen mixture gas so as to remove a thin oxide film being formed on the non-pattern area after a silylation process, enables an edge portion of a silylation region to be planarized so as to prevent the pattern from becoming rough, and forms a photosensitive film pattern by developing the photosensitive film with oxygen plasma. Thereafter, the photosensitive film residue is etched again with a mixture gas of fluorine/oxygen, thereby increasing a fabrication margin of the fine pattern.
    • 在半导体器件中形成精细图案的方法从使用硅烷化工艺的精细图案制造工艺中产生的图案中除去粗糙度作为一种TSI工艺,平滑地消除由剩余的甲硅烷基层残留的感光性膜残留物 非图案区域,并增加了光刻工艺的余量。 为了实现上述目的,该方法用氟/氧混合气体进行蚀刻处理,以便在甲硅烷化过程之后除去在非图案区域上形成的薄氧化膜,使甲硅烷基化区域的边缘部分平坦化 以防止图案变粗糙,并且通过用氧等离子体显影感光膜形成感光膜图案。 此后,用氟/氧的混合气体再次蚀刻感光性膜残渣,从而增加精细图案的制造余量。
    • 2. 发明授权
    • Air discharge valve for a vacuum-sealed clothes bag
    • 用于真空密封的衣服袋的排气阀
    • US08608380B2
    • 2013-12-17
    • US13080275
    • 2011-04-05
    • Myung Soo Kim
    • Myung Soo Kim
    • B65D33/01B65D33/14B65D85/18B65D81/20
    • A47G25/54F16K15/20
    • An air discharge valve for a vacuum-sealed clothes bag having a flexible container includes a valve body for openably closing the vacuum-sealed clothes bag. A hanger is attached to the valve body to extend upwards from the valve body, the hanger being arranged in a substantially coplanar relationship with the valve body. An anchor member is securely attached to the flexible container. First and second fixing caps are fixed to opposite surfaces of the anchor member. A cloth holder is suspended from the anchor member to hold a cloth contained in the flexible container. The valve body is fitted to the first and second fixing caps in a rotatable manner.
    • 一种具有柔性容器的真空密封衣服袋的排气阀,包括用于可打开地关闭真空密封的衣服袋的阀体。 悬挂器附接到阀体以从阀体向上延伸,悬挂器布置成与阀体基本上共面的关系。 锚定构件牢固地附接到柔性容器。 第一和第二固定盖固定在锚定构件的相对表面上。 布架从锚定构件悬挂以保持容纳在柔性容器中的布。 阀体以可旋转的方式装配到第一和第二固定盖上。
    • 4. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07994414B2
    • 2011-08-09
    • US12264285
    • 2008-11-04
    • Myung Soo Kim
    • Myung Soo Kim
    • H01L35/00
    • H01L35/32
    • A semiconductor device is disclosed that can operate utilizing thermoelectric concepts. According to an embodiment, the semiconductor device can comprise: a source/drain conductor formed of a line of metal material on a substrate; a first gate conductor formed of a second line of metal material; and a second gate conductor formed of a third line of metal material, wherein the first gate conductor is disposed adjacent a first portion of the source/drain conductor at one end of the source/drain conductor and the second gate conductor is disposed spaced apart from the first gate conductor and adjacent a second portion of the source/drain conductor at the other end of the source/drain conductor. By applying current to the first gate conductor and the second gate conductor, current can be supplied from the one end of the source/drain conductor to the other end of the source/drain conductor.
    • 公开了可利用热电概念操作的半导体器件。 根据实施例,半导体器件可以包括:在衬底上由金属材料线形成的源极/漏极导体; 由第二线金属材料形成的第一栅极导体; 以及由第三线金属材料形成的第二栅极导体,其中所述第一栅极导体设置在所述源极/漏极导体的一端附近与所述源极/漏极导体的第一部分相邻,并且所述第二栅极导体设置成与所述源极/ 第一栅极导体并且在源极/漏极导体的另一端处邻近源极/漏极导体的第二部分。 通过向第一栅极导体和第二栅极导体施加电流,可以从源极/漏极导体的一端向源极/漏极导体的另一端提供电流。
    • 7. 发明授权
    • Microwave filter with U-type resonator
    • 带U型谐振器的微波滤波器
    • US6054909A
    • 2000-04-25
    • US137711
    • 1998-08-21
    • Chang Hwa LeeMyung Soo KimBon Hee KooDong Suk JunSang Seok LeeTae Goo Choy
    • Chang Hwa LeeMyung Soo KimBon Hee KooDong Suk JunSang Seok LeeTae Goo Choy
    • H01P1/205H01P7/04
    • H01P1/2056
    • The present invention relates to a microwave filter, having U-type resonators, which passes a desired frequency signal and removes an undesired frequency signal when used in a high frequency antenna circuit for wireless communication systems. In accordance with the trend of reducing communication system terminals, it is required to reduce a high frequency filter. The high frequency filter is required to attenuate signals very sharply at the stop band especially near to a passband transmitting and receiving frequency, so as to improve the efficiency of the frequency. The filter may be reduced in weight by forming U-type resonators instead of straight-type resonators. Excellent attenuation characteristics may be achieved at the stop band lower than the passband, using the difference of the characteristic impedance between the open end portion and the shorted portion of the resonator by forming the coupling control grooves at the outer walls of the dielectric block.
    • 本发明涉及一种具有U型谐振器的微波滤波器,当用于无线通信系统的高频天线电路中时,该滤波器通过期望的频率信号并去除非期望的频率信号。 根据减少通信系统终端的趋势,需要降低高频滤波器。 需要高频滤波器在阻带处非常清晰地衰减信号,特别是靠近通带发射和接收频率,以提高频率的效率。 通过形成U型谐振器而不是直型谐振器,可以减小滤波器的重量。 通过在介质块的外壁处形成耦合控制槽,可以通过使用谐振器的开口端部分和短路部分之间的特性阻抗的差异,在低于通带的阻带处获得优异的衰减特性。