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1. 发明申请

US20070264747A1 PATTERNING PROCESS AND METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR USING THE SAME 审中-公开
标题翻译：使用该方法制造有机薄膜晶体管的方法及方法
公开(公告)号：US20070264747A1
公开(公告)日：2007-11-15
申请号：US11308845
申请日：2006-05-15
申请人： Kuo-Hsi Yen , Cheng-Wei Chou , Hsiao-Wen Zan , Chuan-Yi Wu
发明人： Kuo-Hsi Yen , Cheng-Wei Chou , Hsiao-Wen Zan , Chuan-Yi Wu
IPC分类号： H01L51/40
CPC分类号： H01L51/0017 , H01L51/0055 , H01L51/0541
摘要： A patterning process is provided. The patterning process includes the following steps. First, a substrate is provided. Then, a patterned self-assembled monolayer (SAM) is formed on the substrate. Afterwards, an organic material layer is formed over the substrate to cover the self-assembled monolayer. Thereafter, a portion of the organic material layer is removed, wherein the organic material layer in contact with the patterned SAM is retained such that a patterned organic material layer.
摘要翻译：提供了图案化工艺。图案化处理包括以下步骤。首先，提供基板。然后，在衬底上形成图案化的自组装单层（SAM）。之后，在衬底上形成有机材料层以覆盖自组装单层。此后，去除有机材料层的一部分，其中与图案化的SAM接触的有机材料层被保持成图案化的有机材料层。

2. 发明申请

US20120018718A1 Self-aligned top-gate thin film transistors and method for fabricating same 审中-公开
标题翻译：自对准顶栅薄膜晶体管及其制造方法
公开(公告)号：US20120018718A1
公开(公告)日：2012-01-26
申请号：US12927835
申请日：2010-11-26
申请人： Hsiao-Wen Zan , Wei-Tsung Chen , Cheng-Wei Chou , Chuang-Chuang Tsai
发明人： Hsiao-Wen Zan , Wei-Tsung Chen , Cheng-Wei Chou , Chuang-Chuang Tsai
IPC分类号： H01L29/12 , H01L21/04
CPC分类号： H01L29/7869 , H01L29/42384 , H01L29/66969
摘要： A self-aligned top-gate thin film transistor and a fabrication method thereof. The method includes preparing a substrate having sequentially formed thereon an oxide semiconductor layer, a dielectric layer, and a metallic layer, wherein the oxide semiconductor layer includes first and second connecting regions that are not covered by the dielectric layer and the metallic layer thereon respectively, the first and second connecting regions having a property of a conductor after undergone a heating process or an ultraviolet irradiation; and a source electrode and a drain electrode formed on the substrate and connected to the first and second connecting regions, respectively. Therefore, the contact resistance of the first and second connecting regions can be reduced without the process of ion dopants as required by prior art techniques, thereby simplifying the manufacturing process. Also, the source electrode and the drain electrode can be exactly relocated and further increase performance of the device.
摘要翻译：一种自对准顶栅薄膜晶体管及其制造方法。该方法包括制备其上依次形成有氧化物半导体层，电介质层和金属层的衬底，其中氧化物半导体层包括分别不被电介质层和金属层覆盖的第一和第二连接区域，所述第一和第二连接区域在进行加热处理或紫外线照射之后具有导体的性质; 以及源极电极和漏电极，分别形成在所述基板上并连接到所述第一和第二连接区域。因此，不需要现有技术所要求的离子掺杂剂的处理，可以减少第一和第二连接区域的接触电阻，从而简化了制造工艺。此外，源电极和漏电极可以精确地定位并进一步提高器件的性能。

3. 发明申请

US20120042118A1 Method for Flash Memory and Associated Controller 审中-公开
标题翻译：闪存和相关控制器的方法
公开(公告)号：US20120042118A1
公开(公告)日：2012-02-16
申请号：US13112294
申请日：2011-05-20
申请人： Cheng-Wei Chou , Chien-Yi Chen
发明人： Cheng-Wei Chou , Chien-Yi Chen
IPC分类号： G06F12/00
CPC分类号： G11C16/349
摘要： A method is disclosed for a flash memory including a plurality of data units includes determining whether to refresh data of the data units according to number of time the data units that are being read when the flash memory is read. The present invention provides methods for flash memory devices and a specialized controller to utilize values stored in counters relating to the number of read instances of corresponding blocks of data units for the selective control of refreshing data blocks when associated counter values exceed a threshold value.
摘要翻译：公开了一种用于闪速存储器的方法，包括多个数据单元包括根据读取闪速存储器时正在读取的数据单元的时间数来确定是否刷新数据单元的数据。本发明提供了闪存设备和专用控制器的方法，以利用存储在与相关数据单元块的读取实例数量有关的计数器中的值，用于当相关联的计数器值超过阈值时选择性地控制刷新数据块。

4. 发明申请

US20110193089A1 PIXEL STRUCTURE, METHOD OF FABRICATING THE SAME, AND METHOD OF FABRICATING ELECTRONIC DEVICE 审中-公开
标题翻译：像素结构，其制造方法以及制造电子设备的方法
公开(公告)号：US20110193089A1
公开(公告)日：2011-08-11
申请号：US12753098
申请日：2010-04-01
申请人： Cheng-Wei Chou , Hsueh-Hsing Lu , Hung-Che Ting , Tsung-Hsiang Shih , Chia-Yu Chen
发明人： Cheng-Wei Chou , Hsueh-Hsing Lu , Hung-Che Ting , Tsung-Hsiang Shih , Chia-Yu Chen
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A pixel structure including a substrate, a gate, an insulation layer, a metal oxide semiconductor (MOS) layer, a source and a drain, at least one film layer, and a first electrode layer is provided. The gate is disposed on the substrate. The insulation layer covers the gate. The MOS layer is disposed on the insulation layer above the gate. The source and the drain are disposed on the MOS layer. The film layer covers the MOS layer and includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks ultraviolet light from reaching the MOS layer. The first electrode layer is electrically connected to the source or the drain.
摘要翻译：提供了包括基板，栅极，绝缘层，金属氧化物半导体（MOS）层，源极和漏极，至少一个膜层和第一电极层的像素结构。栅极设置在基板上。绝缘层覆盖门。 MOS层设置在栅极上方的绝缘层上。源极和漏极设置在MOS层上。膜层覆盖MOS层，并且包括透明光催化材料，其中透明光催化材料阻挡紫外光到达MOS层。第一电极层电连接到源极或漏极。

5. 发明申请

US20070217767A1 Method of managing media files and media playback apparatus 审中-公开
标题翻译：管理媒体文件和媒体播放装置的方法
公开(公告)号：US20070217767A1
公开(公告)日：2007-09-20
申请号：US11717756
申请日：2007-03-14
申请人： Ching-Shih Tsao , Wen-Chun Lin , Hsu-Hsun Tsai , Cheng-Wei Chou , Shih-Lon Chen
发明人： Ching-Shih Tsao , Wen-Chun Lin , Hsu-Hsun Tsai , Cheng-Wei Chou , Shih-Lon Chen
IPC分类号： H04N5/00
CPC分类号： G11B27/105 , G06F16/40 , G11B27/329
摘要： The invention relates to a method of managing media files received under different transmission modes and related media playback apparatus thereof. The method includes receiving a media file; retrieving media information from the media file regardless of what transmission mode is used when the media file is received; and modifying a media information record corresponding to the media file according to the retrieved media information.
摘要翻译：本发明涉及一种管理在不同传输模式下接收的媒体文件及其相关媒体播放装置的方法。该方法包括：接收媒体文件; 无论在接收媒体文件时使用什么传输模式，都从媒体文件检索媒体信息; 以及根据检索的媒体信息修改与媒体文件相对应的媒体信息记录。

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