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1. 发明申请

US20070269940A1 THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20070269940A1
公开(公告)日：2007-11-22
申请号：US11832550
申请日：2007-08-01
申请人： CHUAN-YI WU , Chin-Chuan Lai , Yung-Chia Kuan , Wei-Jen Tai
发明人： CHUAN-YI WU , Chin-Chuan Lai , Yung-Chia Kuan , Wei-Jen Tai
IPC分类号： H01L21/84
CPC分类号： H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L29/78669
摘要： A thin film transistor is provided, including a substrate, a gate, a first dielectric layer, a channel layer, a source/drain and a second dielectric layer. The gate is disposed on the substrate, and the gate and the substrate are covered with the first dielectric layer. The channel layer is at least disposed on the first dielectric layer above the gate. The source/drain is disposed on the channel layer. The source/drain includes a first barrier layer, a conductive layer and a second barrier layer. The first barrier layer is disposed between the conductive layer and the channel layer. The conductive layer is covered with the first barrier layer and the second barrier layer. The source/drain is covered with the second dielectric layer. Accordingly, the variation of electric characters can be reduced. Moreover, a method for fabricating a thin film transistor is also provided.
摘要翻译：提供一种薄膜晶体管，其包括基板，栅极，第一介电层，沟道层，源极/漏极和第二介电层。栅极设置在基板上，栅极和基板被第一介电层覆盖。沟道层至少设置在栅极上方的第一介电层上。源极/漏极设置在沟道层上。源/漏包括第一阻挡层，导电层和第二阻挡层。第一阻挡层设置在导电层和沟道层之间。导电层被第一阻挡层和第二阻挡层覆盖。源极/漏极被第二介电层覆盖。因此，可以减少电气字符的变化。此外，还提供了一种制造薄膜晶体管的方法。

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