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1. 发明授权

US11771328B2 Core temperature sensor with thermal conductivity compensation 有权
公开(公告)号：US11771328B2
公开(公告)日：2023-10-03
申请号：US16761841
申请日：2018-12-21
申请人： Robert Bosch GmbH , Beatrix Mensch , Thomas Rocznik , Christian Peters , Seow Yuen Yee
发明人： Beatrix Mensch , Thomas Rocznik , Christian Peters , Seow Yuen Yee
IPC分类号： A61B5/01 , G01K13/20 , G01K1/16 , G01K7/16 , A61B5/00 , G01K15/00
CPC分类号： A61B5/01 , A61B5/742 , G01K1/165 , G01K7/16 , G01K13/20 , G01K15/005 , A61B2562/0271
摘要： In one embodiment, a temperature sensor system includes a sensor assembly with a temperature sensing portion configured to generate a first signal based upon a temperature of body proximate a surface portion of the temperature sensing portion, and a thermoelectric generator portion configured to receive heat flow from the body through the temperature sensing portion and to generate a second signal based upon the heat flow. A control unit is operably connected to the sensor assembly and a memory and configured to execute program instructions stored in the memory to calculate and output a corrected temperature based upon the first signal, the second signal, and at least one correction factor stored in the memory. The at least one correcting factor is determined based upon at least one of a thermal conductivity of the sensor assembly, a size of the sensor assembly, and an aspect ratio of the sensor assembly.

2. 发明授权

US08980144B2 Method for producing polypropylene films 有权
标题翻译：生产聚丙烯薄膜的方法
公开(公告)号：US08980144B2
公开(公告)日：2015-03-17
申请号：US13132966
申请日：2009-12-08
申请人： Detlef Busch , Harald Eiden , Christian Peters , Josef Schaan
发明人： Detlef Busch , Harald Eiden , Christian Peters , Josef Schaan
IPC分类号： B29C47/06 , B32B27/32 , B29B17/00 , B29C47/00 , B29C47/56 , H01G4/18 , B29C47/14 , B29C55/12 , B29K23/00 , B29K105/00 , B29K105/26 , B29L9/00
CPC分类号： B29B17/0005 , B29C47/0021 , B29C47/003 , B29C47/0057 , B29C47/062 , B29C47/14 , B29C47/145 , B29C47/56 , B29C55/12 , B29K2023/12 , B29K2105/256 , B29K2105/26 , B29L2009/00 , C08J5/18 , C08J2323/12 , C08J2423/12 , H01B3/441 , H01G4/18 , Y02W30/62 , Y10T428/31692 , Y10T428/31913
摘要： The invention relates to a method for producing a biaxially oriented polypropylene film including at least one layer, which is constructed from propylene polymer B and a propylene polymer that has been recycled once. The method includes heat and melting propylene polymer B in a first extruder and heating a melting a propylene polymer A without a fraction of recycled material in a second extruder. The molten mass of the propylene polymer A is fed to two sides of the propylene polymer molten mass of B such that the propylene polymer A forms border regions of the film during the production process. The two border regions are then cut off after longitudinal and traverse stretching of the film, and melted and mixed together with the propylene polymer B and extruded to form a precursor film in the first extruder. The biaxially oriented polypropylene film comprising a propylene polymer that has been recycled only once is useful for producing capacitors.
摘要翻译：本发明涉及一种双轴取向聚丙烯薄膜的制造方法，所述双轴取向聚丙烯薄膜包括由丙烯聚合物B和已经循环使用一次的丙烯聚合物构成的至少一层。该方法包括在第一挤出机中加热和熔融丙烯聚合物B，并在第二挤出机中加热熔融丙烯聚合物A而不用一部分再循环材料。丙烯聚合物A的熔融质量被供给到丙烯聚合物熔融物料B的两侧，使得丙烯聚合物A在制造过程中形成膜的边界区域。然后在纵向和横向拉伸膜之后切断两个边界区域，并与丙烯聚合物B熔融并混合，并在第一挤出机中挤出以形成前体膜。包含已经再循环一次的丙烯聚合物的双轴取向聚丙烯膜可用于制造电容器。

3. 发明授权

US08670270B2 Method of operating phase-change memory 有权
标题翻译：操作相变存储器的方法
公开(公告)号：US08670270B2
公开(公告)日：2014-03-11
申请号：US13402895
申请日：2012-02-23
申请人： Jan Otterstedt , Thomas Nirschl , Christian Peters , Michael Bollu , Wolf Allers , Michael Sommer
发明人： Jan Otterstedt , Thomas Nirschl , Christian Peters , Michael Bollu , Wolf Allers , Michael Sommer
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0071 , G11C2013/0073 , G11C2013/0078 , G11C2213/15 , G11C2213/79
摘要： One or more embodiments may be related to a method of operating a phase-change memory element, comprising: providing the phase-change memory element, the phase-change memory element having a first terminal and a second terminal; causing a first current through the memory element from the first terminal to the second terminal; and causing a second current through the memory element from the second terminal to the first terminal, wherein the causing the first current programs the memory element from a first resistance state to a second resistance state and the causing the second current programs the memory element from the first resistance state to the second resistance state.
摘要翻译：一个或多个实施例可以涉及一种操作相变存储器元件的方法，包括：提供所述相变存储元件，所述相变存储元件具有第一端子和第二端子; 引起从第一端子到第二端子的存储元件的第一电流; 并且引起从第二端到第一端的存储元件的第二电流，其中使第一电流将存储器元件从第一电阻状态编程到第二电阻状态，并且使得第二电流从存储元件第一电阻状态到第二电阻状态。

4. 发明申请

US20140063923A1 Mismatch Error Reduction Method and System for STT MRAM 有权
标题翻译： STT MRAM的不匹配误差减少方法和系统
公开(公告)号：US20140063923A1
公开(公告)日：2014-03-06
申请号：US13605693
申请日：2012-09-06
申请人： Mihail Jefremow , Wolf Allers , Jan Otterstedt , Christian Peters , Thomas Kern
发明人： Mihail Jefremow , Wolf Allers , Jan Otterstedt , Christian Peters , Thomas Kern
IPC分类号： G11C7/06 , G11C11/16
CPC分类号： G11C11/1673
摘要： The invention relates to methods and systems for reading a memory cell and in particular, an STT MRAM. In accordance with one aspect of the invention, a method for reading a memory cell includes combining a cell current from a memory cell with a reference current from a reference source to create an average current, enabling the average current to flow through a first mirror transistor in a sense path and a second mirror transistor in a reference path, storing the current mismatch on a capacitor coupled to the gates of the first mirror transistor and the second mirror transistor, disconnecting the memory cell from the reference path and disconnecting the reference source from the sense path, enabling the cell current only to flow through the sense path, and determining the output level of the memory cell.
摘要翻译：本发明涉及用于读取存储器单元，特别是STT MRAM的方法和系统。根据本发明的一个方面，一种用于读取存储单元的方法包括将来自存储单元的单元电流与来自参考源的参考电流组合以产生平均电流，使平均电流能够流过第一镜像晶体管在参考路径中的感测路径和第二镜像晶体管中，将电流失配存储在耦合到第一镜面晶体管和第二镜像晶体管的栅极的电容器上，将存储器单元与参考路径断开并将参考源与感测路径，使得电池电流仅能够流过感测路径，并且确定存储器单元的输出电平。

5. 发明申请

US20140056058A1 Differential Sensing Method and System for STT MRAM 有权
标题翻译： STT MRAM差分传感方法及系统
公开(公告)号：US20140056058A1
公开(公告)日：2014-02-27
申请号：US13592404
申请日：2012-08-23
申请人： Mihail Jefremow , Wolf Allers , Jan Otterstedt , Christian Peters , Thomas Kern
发明人： Mihail Jefremow , Wolf Allers , Jan Otterstedt , Christian Peters , Thomas Kern
IPC分类号： G11C7/12 , G11C11/16 , G11C7/00
CPC分类号： G11C29/028 , G11C11/16 , G11C11/1673 , G11C29/021 , G11C2029/5006
摘要： The invention relates to methods and systems for reading a memory cell and in particular, an STT MRAM. In accordance with one aspect of the invention, a system for reading a memory cell includes a read path and a precharge path. The reference current is provided through the read path and is sampled via a sampling element in the read path. Subsequently, a current from the memory cell is provided through the same sampling element and read path. The output level is then determined by the cell current working against the sampled reference current.
摘要翻译：本发明涉及用于读取存储器单元，特别是STT MRAM的方法和系统。根据本发明的一个方面，用于读取存储单元的系统包括读取通道和预充电路径。参考电流通过读取路径提供，并通过读取路径中的采样元件进行采样。随后，通过相同的采样元件和读取路径提供来自存储单元的电流。然后，输出电平由针对采样参考电流工作的电池电流确定。

6. 发明申请

US20130058159A1 METHOD OF OPERATING PHASE-CHANGE MEMORY 有权
标题翻译：操作相变记忆的方法
公开(公告)号：US20130058159A1
公开(公告)日：2013-03-07
申请号：US13402895
申请日：2012-02-23
申请人： Jan Otterstedt , Thomas Nirschl , Christian Peters , Michael Bollu , Wolf Allers , Michael Sommer
发明人： Jan Otterstedt , Thomas Nirschl , Christian Peters , Michael Bollu , Wolf Allers , Michael Sommer
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0071 , G11C2013/0073 , G11C2013/0078 , G11C2213/15 , G11C2213/79
摘要： One or more embodiments may be related to a method of operating a phase-change memory element, comprising: providing the phase-change memory element, the phase-change memory element having a first terminal and a second terminal; causing a first current through the memory element from the first terminal to the second terminal; and causing a second current through the memory element from the second terminal to the first terminal, wherein the causing the first current programs the memory element from a first resistance state to a second resistance state and the causing the second current programs the memory element from the first resistance state to the second resistance state.
摘要翻译：一个或多个实施例可以涉及一种操作相变存储器元件的方法，包括：提供所述相变存储元件，所述相变存储元件具有第一端子和第二端子; 引起从第一端子到第二端子的存储元件的第一电流; 并且引起从第二端到第一端的存储元件的第二电流，其中使第一电流将存储器元件从第一电阻状态编程到第二电阻状态，并且使得第二电流从存储元件第一电阻状态到第二电阻状态。

7. 发明授权

US08037759B2 Method and device for determining the relative position, velocity and/or acceleration of a body 有权
标题翻译：用于确定身体的相对位置，速度和/或加速度的方法和装置
公开(公告)号：US08037759B2
公开(公告)日：2011-10-18
申请号：US11916377
申请日：2006-05-19
申请人： Christian Peters , Alexander Buhmann , Yiannos Manoli
发明人： Christian Peters , Alexander Buhmann , Yiannos Manoli
IPC分类号： G01P15/08
CPC分类号： G01P15/0888 , G01P3/22 , G01P7/00 , G01P15/18
摘要： In a method for determining the relative position, velocity, acceleration, and/or the rotation center of a body displaceable in a three dimensional space, at least twelve linear acceleration sensors are provided and in each case arranged on a position which is stationarily fixed with respect to the body. At least one acceleration measurement signal is captured by the linear acceleration sensors. A position, velocity, acceleration, and/or rotation center signal is generated for the body from the acceleration measurement signal and data describing the position and orientation of the linear acceleration sensors in the body-fixed coordinate system.
摘要翻译：在用于确定可在三维空间中移动的身体的相对位置，速度，加速度和/或旋转中心的方法中，提供至少十二个线性加速度传感器，并且在每种情况下都布置在固定与尊重身体。线性加速度传感器捕获至少一个加速度测量信号。根据加速度测量信号和身体固定坐标系中描述线性加速度传感器的位置和姿态的数据生成身体的位置，速度，加速度和/或旋转中心信号。

8. 发明申请

US20110103150A1 NON-VOLATILE MEMORY WITH PREDICTIVE PROGRAMMING 有权
标题翻译：具有预测编程的非易失性存储器
公开(公告)号：US20110103150A1
公开(公告)日：2011-05-05
申请号：US12610781
申请日：2009-11-02
申请人： Nigel Chan , Wolf Allers , Michael Bollu , Dimitri Lebedev , Jan Otterstedt , Christian Peters
发明人： Nigel Chan , Wolf Allers , Michael Bollu , Dimitri Lebedev , Jan Otterstedt , Christian Peters
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/349 , G11C16/0483 , G11C16/06
摘要： A method of operating an integrated circuit includes applying at least one first programming pulse to a plurality of non-volatile memory cells to adjust a level of a storage parameter of each of the non-volatile memory cells, the at least one first programming pulse defined by a plurality of pulse parameters each having a fixed valued, and determining a fail count by measuring the number of non-volatile memory cells of the plurality of non-volatile memory cells having a storage parameter level exceeding a verify level. The method further includes determining a change in an programming behavior of the plurality of non-volatile memory cells based on the fail count, adjusting a value of at least one pulse parameter of at least one second programming pulse defined by the plurality of pulse parameters to a desired value based on the change in programming behavior, and applying the at least one second programming pulse to the plurality non-volatile memory cells.
摘要翻译：操作集成电路的方法包括将至少一个第一编程脉冲施加到多个非易失性存储器单元以调整每个非易失性存储单元的存储参数的电平，所述至少一个第一编程脉冲被定义通过多个具有固定值的脉冲参数，并且通过测量具有超过验证电平的存储参数电平的多个非易失性存储器单元的非易失性存储器单元的数量来确定故障计数。该方法还包括基于故障计数确定多个非易失性存储器单元的编程行为的变化，将由多个脉冲参数定义的至少一个第二编程脉冲的至少一个脉冲参数的值调整为基于编程行为的变化的期望值，以及将所述至少一个第二编程脉冲应用于所述多个非易失性存储器单元。

9. 发明授权

US07700344B2 Compositions and methods for enhancing the immunogenicity of antigens 有权
公开(公告)号：US07700344B2
公开(公告)日：2010-04-20
申请号：US11376564
申请日：2006-03-16
申请人： Yvonne Paterson , Christian Peters , George Gunn
发明人： Yvonne Paterson , Christian Peters , George Gunn
IPC分类号： C12N15/00 , C12N15/63 , C12N15/74 , C07H21/04 , A61K39/02
CPC分类号： C12N15/74 , A61K38/164
摘要： The present invention includes compositions, methods and kits for enhancing the immunogenicity of an antigen via fusion to a Listerial protein. The present invention further encompasses Listeria vaccine strains for enhancing the immunogenicity of an antigen.

10. 发明授权

US07660169B2 Device and method for non-volatile storage of a status value 有权
标题翻译：用于非易失性存储状态值的设备和方法
公开(公告)号：US07660169B2
公开(公告)日：2010-02-09
申请号：US11564695
申请日：2006-11-29
申请人： Jan Otterstedt , Christian Peters , Dirk Rabe , Holger Sedlak
发明人： Jan Otterstedt , Christian Peters , Dirk Rabe , Holger Sedlak
IPC分类号： G11C7/00
CPC分类号： G06K19/07381 , G06F11/1441 , G06F21/55
摘要： A device for non-volatile storage of a status value indicating that there has been a condition, including a non-volatile storage, an energy storage for storing energy when applying a supply voltage, and a switching circuit to couple the energy storage to the non-volatile storage to write the status value thereto if the condition is present.
摘要翻译：用于非易失性存储状态值的装置，其指示已经存在包括非易失性存储器的状况的值，用于在施加电源电压时存储能量的能量存储器以及用于将能量存储器耦合到非易失性存储器的开关电路 - 如果条件存在，则将其状态值写入其中。

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