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    • 3. 发明授权
    • Test semiconductor device in full frequency with half frequency tester
    • 半频测试仪全速测试半导体器件
    • US07516385B2
    • 2009-04-07
    • US11414612
    • 2006-04-28
    • Chih-Chiang TsengHsin-Ley Suzanne ChenJae-Hyeong Kim
    • Chih-Chiang TsengHsin-Ley Suzanne ChenJae-Hyeong Kim
    • G01R31/28
    • G01R31/31727G01R31/31922
    • An integrated circuit comprises a double frequency clock generator and a double input generator to test semiconductor devices at frill frequency using a half frequency tester. A clock generator circuit and a test data generator circuit provides differential clock and test data signals at a normal (1× mode) and high-speed rate (2× mode) to a device under test. In 1× mode, clock generator and test data generator circuits pass through the differential clock signals and test data values provided by a testing device unchanged. In 2× mode, the clock generator circuit receives the differential clock signal as clock signals clk and clkb and outputs clock signals clk_int and clkb_int that are inverted signals and twice the frequency of clk and clkb. The test data generator circuit clocks test data values into registers according to clk_int and clkb_int to generate an increased number of test data values per clock signal clk.
    • 集成电路包括双频时钟发生器和双输入发生器,以使用半频测试仪来测试半频率器件的边缘频率。 时钟发生器电路和测试数据发生器电路以正常(1x模式)和高速率(2x模式)向待测器件提供差分时钟和测试数据信号。 在1x模式下,时钟发生器和测试数据发生器电路通过差分时钟信号和测试设备提供的测试数据值不变。 在2x模式下,时钟发生器电路接收作为时钟信号clk和clkb的差分时钟信号,并输出作为反相信号的时钟信号clk_int和clkb_int,是clk和clkb的两倍频率。 测试数据发生器电路根据clk_int和clkb_int将测试数据值转换为寄存器,以产生每个时钟信号clk增加的测试数据值。
    • 5. 发明申请
    • Test semiconductor device in full frequency with half frequency tester
    • 半频测试仪全速测试半导体器件
    • US20070266286A1
    • 2007-11-15
    • US11414612
    • 2006-04-28
    • Chih-Chiang TsengHsin-Ley ChenJae-Hyeong Kim
    • Chih-Chiang TsengHsin-Ley ChenJae-Hyeong Kim
    • G01R31/28
    • G01R31/31727G01R31/31922
    • An integrated circuit includes a double frequency clock generator and a double input generator to test semiconductor devices at full frequency using a half frequency tester. A clock generator circuit and a test data generator circuit provides differential clock signals and test data signals at a normal rate (1× mode) and a high speed rate (2× mode) to a device under test. In the 1× mode, the clock generator circuit and the test data generator circuit pass through the differential clock signals and test data values provided by a testing device unchanged. In the 2× mode, the clock generator circuit receives the differential clock signal as a clock signal clk and a clock signal clkb 90 degrees out of phase, and outputs a clock signal clk_int and a clock signal clkb_int that are inverted signals of each other and that are twice the frequency of the clock signal clk and the clock signal clkb. In the 2× mode, the test data generator circuit receives the test data values from the testing device and clocks the test data values into registers according to the clock signal clk_int and the clock signal clkb_int in order to generate an increased number of test data values per the clock signal clk.
    • 集成电路包括双频时钟发生器和双输入发生器,以使用半频测试仪在全频率下测试半导体器件。 时钟发生器电路和测试数据发生器电路以正常速率(1x模式)和高速率(2x模式)向待测器件提供差分时钟信号和测试数据信号。 在1x模式下,时钟发生器电路和测试数据发生器电路通过差分时钟信号和测试设备提供的测试数据值不变。 在2x模式下,时钟发生器电路将差分时钟信号作为时钟信号clk和相位90度的时钟信号clk接收,并且输出作为彼此反相信号的时钟信号clk_int和时钟信号clkb_int,时钟信号clk_int和时钟信号clkb_int是彼此的反相信号, 是时钟信号clk和时钟信号clkb的两倍频率。 在2x模式下,测试数据发生器电路从测试装置接收测试数据值,并根据时钟信号clk_int和时钟信号clkb_int将测试数据值计时到寄存器中,以产生每个测试数据值增加的数量 时钟信号clk。
    • 7. 发明申请
    • Semiconductor device tester pin contact resistance measurement
    • 半导体器件测试器引脚接触电阻测量
    • US20070080697A1
    • 2007-04-12
    • US11413219
    • 2006-04-28
    • Chih-Chiang TsengPatrick ChuangChungji Lu
    • Chih-Chiang TsengPatrick ChuangChungji Lu
    • G01R27/08
    • G01R27/205G01R31/2886
    • A contact resistance measuring circuit is configured to determine the contact resistance of a testing device. The measuring circuit is coupled to a processing circuit and the testing device. The measuring circuit includes a pair of input/output units coupled together via a pass device. Each of the input/output units includes a pull-up device and a pull-down device to provide separate pull-up and pull-down control, respectively. The pull-up devices, the pull-down devices, and the pass device are dynamically configurable such that the measuring circuit uses either a pull-up mode or a pull-down mode to measure voltage and current characteristics of each contact point, or pin, of the testing device. The processing circuit calculates the contact resistance for each pin according to the measured voltage and current characteristics. The calculated contact resistances are used to calibrate the testing device.
    • 接触电阻测量电路被配置为确定测试装置的接触电阻。 测量电路耦合到处理电路和测试装置。 测量电路包括经由通过装置耦合在一起的一对输入/输出单元。 每个输入/输出单元包括分别上拉和下拉控制的上拉装置和下拉装置。 上拉器件,下拉器件和通过器件是可动态配置的,使得测量电路使用上拉模式或下拉模式来测量每个触点或引脚的电压和电流特性 ,测试设备。 处理电路根据测量的电压和电流特性来计算每个引脚的接触电阻。 计算的接触电阻用于校准测试装置。
    • 9. 发明申请
    • METHOD OF ESTIMATING CHANNEL BANDWIDTH FROM A TIME DOMAIN REFLECTOMETER (TDR) MEASUREMENT
    • 估计来自时域反射计(TDR)测量的通道带宽的方法
    • US20090212790A1
    • 2009-08-27
    • US12431037
    • 2009-04-28
    • Charles A. MillerJim Chih-Chiang Tseng
    • Charles A. MillerJim Chih-Chiang Tseng
    • G01R27/06
    • G01R27/04
    • Bandwidth of a test channel is determined from a single port Time Domain Reflectometer (TDR) measurement with the channel terminated in a short or an open circuit. Bandwidth is estimated by: (1) making a TDR measurement of a channel terminated in a short or open circuit; (2) determining a maximum slope of the reflection from the TDR measurement; (2) calculating an interpolated rise or fall time, for example by taking 80% of the applied voltage between the 10% and 90% points, and then dividing the applied voltage by the maximum slope determined; (3) dividing the overall interpolated rise time by the square root of two to account for the TDR signal proceeding through the channel twice; (4) removing the contribution of rise time from measurement equipment; and (5) completing calculation of channel bandwidth using a formula to relate bandwidth to rise time, such as: bandwidth=0.35/rise time.
    • 测试通道的带宽由单端口时域反射计(TDR)测量确定,通道以短路或开路端接。 带宽通过以下方式估计:(1)使TDR测量在短路或开路中终止; (2)从TDR测量确定反射的最大斜率; (2)例如通过将所施加的电压的80%乘以10%和90%之间的点来计算内插的上升或下降时间,然后将所施加的电压除以所确定的最大斜率; (3)将整体内插上升时间除以二的平方根以考虑通过信道进行的TDR信号两次; (4)消除测量设备上升时间的贡献; 并且(5)使用公式来完成信道带宽的计算,以将带宽与上升时间相关联,例如:带宽= 0.35 /上升时间。
    • 10. 发明授权
    • Method of estimating channel bandwidth from a time domain reflectometer (TDR) measurement using rise time and maximum slope
    • 使用上升时间和最大斜率从时域反射计(TDR)测量中估计通道带宽的方法
    • US07525302B2
    • 2009-04-28
    • US11048383
    • 2005-01-31
    • Charles A. MillerJim Chih-Chiang Tseng
    • Charles A. MillerJim Chih-Chiang Tseng
    • G01R27/04
    • G01R27/04
    • Bandwidth of a test channel is determined from a single port Time Domain Reflectometer (TDR) measurement with the channel terminated in a short or an open circuit. Bandwidth is estimated by: (1) making a TDR measurement of a channel terminated in a short or open circuit; (2) determining a maximum slope of the reflection from the TDR measurement; (3) calculating an interpolated rise or fall time, for example by taking 80% of the applied voltage between the 10% and 90% points, and then dividing the applied voltage by the maximum slope determined; (4) dividing the overall interpolated rise time by the square root of two to account for the TDR signal proceeding through the channel twice; (5) removing the contribution of rise time from measurement equipment; and (6) completing calculation of channel bandwidth using a formula to relate bandwidth to rise time, such as: bandwidth=0.35/rise time.
    • 测试通道的带宽由单端口时域反射计(TDR)测量确定,通道以短路或开路端接。 带宽通过以下方式估计:(1)使TDR测量在短路或开路中终止; (2)从TDR测量确定反射的最大斜率; (3)例如通过将所施加的电压的80%乘以10%至90%的点来计算内插的上升或下降时间,然后将所施加的电压除以所确定的最大斜率; (4)将整体内插上升时间除以二的平方根以考虑通过通道进行的TDR信号两次; (5)消除测量设备上升时间的贡献; 和(6)使用公式来完成信道带宽的计算,以将带宽与上升时间相关联,例如:带宽= 0.35 /上升时间。