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1. 发明授权

US08581322B2 Nonvolatile memory device and method for making the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08581322B2
公开(公告)日：2013-11-12
申请号：US13170618
申请日：2011-06-28
申请人： Chi-Pin Lu , Jung-Yu Hsieh , Ling-Wuu Yang
发明人： Chi-Pin Lu , Jung-Yu Hsieh , Ling-Wuu Yang
IPC分类号： H01L29/788
CPC分类号： H01L21/28273 , H01L27/11521
摘要： A method for making a nonvolatile memory device includes the following steps. A conductive structure is formed, wherein the conductive structure has a first top portion. The first top portion is converted into a second top portion having a domed surface.
摘要翻译：一种制造非易失性存储器件的方法包括以下步骤。形成导电结构，其中导电结构具有第一顶部部分。第一顶部部分被转换成具有圆顶表面的第二顶部部分。

2. 发明授权

US07927660B2 Method of manufacturing nano-crystalline silicon dot layer 有权
标题翻译：制造纳米晶硅点层的方法
公开(公告)号：US07927660B2
公开(公告)日：2011-04-19
申请号：US11465883
申请日：2006-08-21
申请人： Chi-Pin Lu
发明人： Chi-Pin Lu
IPC分类号： C23C28/00 , H01L21/336
CPC分类号： C23C8/02 , B82Y10/00 , C23C16/402 , C23C16/56 , C23C26/00 , C23C28/322 , C23C28/323 , C23C28/345 , H01L21/02238 , H01L21/02255 , H01L21/02532 , H01L21/02592 , H01L21/02595 , H01L21/02601 , H01L21/0262 , H01L21/02664 , H01L21/28273 , H01L21/31662
摘要： A method of manufacturing a nano-crystalline silicon dot layer is provided. A silicon layer is formed over a substrate. The silicon layer includes crystalline silicon region and amorphous silicon region. An oxidation process is performed to oxidize the amorphous silicon region and the surfaces of the crystalline silicon region to form a silicon oxide layer containing nano-crystalline silicon dots.
摘要翻译：提供一种制造纳米晶硅点层的方法。在衬底上形成硅层。硅层包括晶体硅区域和非晶硅区域。进行氧化处理以氧化非晶硅区域和晶体硅区域的表面以形成含有纳米晶硅点的氧化硅层。

3. 发明申请

US20110042738A1 NITRIDGE READ-ONLY MEMORY CELL AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： NITRIDGE只读存储器单元及其制造方法
公开(公告)号：US20110042738A1
公开(公告)日：2011-02-24
申请号：US12914043
申请日：2010-10-28
申请人： Chi-Pin LU
发明人： Chi-Pin LU
IPC分类号： H01L29/788
CPC分类号： H01L21/28282 , H01L29/66833 , H01L29/7923
摘要： A nitride read-only memory cell and a method of manufacturing the same are provided. First, a substrate is provided, and a first oxide layer is formed on the substrate. Next, a nitride layer is deposited on the first oxide layer via a first gas and a second gas. The flow ratio of the first gas to the second gas is 2:1. After that, a second oxide layer is formed on the nitride layer. Then, a bit-line region is formed at the substrate. Afterward, a gate is formed on the second oxide layer. The first oxide layer, nitride layer, the second oxide layer and the gate compose a stack structure of the cell. Further, a spacer is formed on the side-wall of the stack structure.
摘要翻译：提供一种氮化物只读存储单元及其制造方法。首先，提供基板，在基板上形成第一氧化物层。接下来，经由第一气体和第二气体在第一氧化物层上沉积氮化物层。第一气体与第二气体的流量比为2:1。之后，在氮化物层上形成第二氧化物层。然后，在基板上形成位线区域。之后，在第二氧化物层上形成栅极。第一氧化物层，氮化物层，第二氧化物层和栅极构成电池的堆叠结构。此外，在堆叠结构的侧壁上形成间隔物。

4. 发明授权

US07875926B2 Non-volatile memory cell 有权
标题翻译：非易失性存储单元
公开(公告)号：US07875926B2
公开(公告)日：2011-01-25
申请号：US12785698
申请日：2010-05-24
申请人： Chi-Pin Lu , Shing-Ann Luo
发明人： Chi-Pin Lu , Shing-Ann Luo
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/518 , H01L21/02164 , H01L21/02274 , H01L21/28282 , H01L21/31612 , H01L29/513
摘要： A super-silicon-rich oxide (SSRO) non-volatile memory cell includes a gate conductive layer on a substrate, a source/drain in the substrate at respective sides of the gate conductive layer, a tunneling dielectric layer between the gate conductive layer and the substrate, a SSRO layer serving as a charge trapping layer between the gate conductive layer and the tunneling dielectric layer, and an upper-dielectric layer between the gate conductive layer and the SSRO layer.
摘要翻译：超富硅氧化物（SSRO）非易失性存储单元包括衬底上的栅极导电层，栅极导电层各侧的衬底中的源极/漏极，栅极导电层和栅极导电层之间的隧道电介质层衬底，用作栅极导电层和隧道电介质层之间的电荷俘获层的SSRO层，以及在栅极导电层和SSRO层之间的上部介电层。

5. 发明授权

US07521321B2 Method of fabricating a non-volatile semiconductor memory device 有权
标题翻译：制造非易失性半导体存储器件的方法
公开(公告)号：US07521321B2
公开(公告)日：2009-04-21
申请号：US11693716
申请日：2007-03-30
申请人： Yen-Hao Shih , Ming-Hsiang Hsueh , Erh-Kun Lai , Chia-Wei Wu , Chi-Pin Lu , Jung-Yu Hsieh
发明人： Yen-Hao Shih , Ming-Hsiang Hsueh , Erh-Kun Lai , Chia-Wei Wu , Chi-Pin Lu , Jung-Yu Hsieh
IPC分类号： H01L21/336
CPC分类号： H01L29/42332 , H01L21/28273 , H01L21/28282 , H01L29/42348 , H01L29/7887 , H01L29/7923
摘要： The present invention relates to a memory device and a method of fabricating the same. The memory device comprises a substrate, a tunnel dielectric film on the substrate, pairs of source and drain regions formed in the substrate, and a number of separate storage blocks between each pair of the source and drain regions. Each storage wire block includes a storage medium and a silicon dioxide layer. Two storage blocks are separated by an interval of at least 100 angstroms.
摘要翻译：本发明涉及一种存储器件及其制造方法。存储器件包括衬底，衬底上的隧道电介质膜，形成在衬底中的源区和漏区对，以及在每对源区和漏区之间的多个分开的存储块。每个存储线块包括存储介质和二氧化硅层。两个存储块以至少100埃的间隔分开。

6. 发明申请

US20090008703A1 NON-VOLATILE MEMORY CELL AND FABRICATING METHOD THEREOF 有权
标题翻译：非挥发性记忆细胞及其制备方法
公开(公告)号：US20090008703A1
公开(公告)日：2009-01-08
申请号：US11774381
申请日：2007-07-06
申请人： Chi-Pin Lu , Shing-Ann Luo
发明人： Chi-Pin Lu , Shing-Ann Luo
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/518 , H01L21/02164 , H01L21/02274 , H01L21/28282 , H01L21/31612 , H01L29/513
摘要： A super-silicon-rich oxide (SSRO) non-volatile memory cell includes a gate conductive layer on a substrate, a source/drain in the substrate at respective sides of the gate conductive layer, a tunneling dielectric layer between the gate conductive layer and the substrate, a SSRO layer serving as a charge trapping layer between the gate conductive layer and the tunneling dielectric layer, and an upper-dielectric layer between the gate conductive layer and the SSRO layer.
摘要翻译：超富硅氧化物（SSRO）非易失性存储单元包括衬底上的栅极导电层，栅极导电层各侧的衬底中的源极/漏极，栅极导电层和栅极导电层之间的隧道电介质层衬底，用作栅极导电层和隧道电介质层之间的电荷俘获层的SSRO层，以及在栅极导电层和SSRO层之间的上部介电层。

7. 发明申请

US20080164513A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF FABRICATING A NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非挥发性半导体存储器件以及制造非易失性半导体存储器件的方法
公开(公告)号：US20080164513A1
公开(公告)日：2008-07-10
申请号：US11693716
申请日：2007-03-30
申请人： Yen-Hao Shih , Ming-Hsiang Hsueh , Erh-Kun Lal , Chia-Wei Wu , Chi-Pin Lu , Jung-Yu Hsieh
发明人： Yen-Hao Shih , Ming-Hsiang Hsueh , Erh-Kun Lal , Chia-Wei Wu , Chi-Pin Lu , Jung-Yu Hsieh
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/42332 , H01L21/28273 , H01L21/28282 , H01L29/42348 , H01L29/7887 , H01L29/7923
摘要： The present invention relates to a memory device and a method of fabricating the same. The memory device comprises a substrate, a tunnel dielectric film on the substrate, pairs of source and drain regions formed in the substrate, and a number of separate storage blocks between each pair of the source and drain regions. Each storage wire block includes a storage medium and a silicon dioxide layer. Two storage blocks are separated by an interval of at least 100 angstroms.
摘要翻译：本发明涉及一种存储器件及其制造方法。存储器件包括衬底，衬底上的隧道电介质膜，形成在衬底中的源区和漏区对，以及在每对源区和漏区之间的多个分开的存储块。每个存储线块包括存储介质和二氧化硅层。两个存储块以至少100埃的间隔分开。

8. 发明申请

US20080044574A1 METHOD OF MANUFACTURING NANO-CRYSTALLINE SILICON DOT LAYER 有权
标题翻译：制备纳米结晶硅陶瓷层的方法
公开(公告)号：US20080044574A1
公开(公告)日：2008-02-21
申请号：US11465883
申请日：2006-08-21
申请人： Chi-Pin Lu
发明人： Chi-Pin Lu
IPC分类号： C23C28/00 , C23C16/00 , B05D3/04
CPC分类号： C23C8/02 , B82Y10/00 , C23C16/402 , C23C16/56 , C23C26/00 , C23C28/322 , C23C28/323 , C23C28/345 , H01L21/02238 , H01L21/02255 , H01L21/02532 , H01L21/02592 , H01L21/02595 , H01L21/02601 , H01L21/0262 , H01L21/02664 , H01L21/28273 , H01L21/31662
摘要： A method of manufacturing a nano-crystalline silicon dot layer is provided. A silicon layer is formed over a substrate. The silicon layer includes crystalline silicon region and amorphous silicon region. An oxidation process is performed to oxidize the amorphous silicon region and the surfaces of the crystalline silicon region to form a silicon oxide layer containing nano-crystalline silicon dots.
摘要翻译：提供一种制造纳米晶硅点层的方法。在衬底上形成硅层。硅层包括晶体硅区和非晶硅区。进行氧化处理以氧化非晶硅区域和晶体硅区域的表面以形成含有纳米晶硅点的氧化硅层。

9. 发明授权

US08373218B2 Nitride read-only memory cell and method of manufacturing the same 有权
标题翻译：氮化物只读存储单元及其制造方法
公开(公告)号：US08373218B2
公开(公告)日：2013-02-12
申请号：US12914043
申请日：2010-10-28
申请人： Chi-Pin Lu
发明人： Chi-Pin Lu
IPC分类号： H01L29/76
CPC分类号： H01L21/28282 , H01L29/66833 , H01L29/7923
摘要： A nitride read-only memory cell and a method of manufacturing the same are provided. First, a substrate is provided, and a first oxide layer is formed on the substrate. Next, a nitride layer is deposited on the first oxide layer via a first gas and a second gas. The flow ratio of the first gas to the second gas is 2:1. After that, a second oxide layer is formed on the nitride layer. Then, a bit-line region is formed at the substrate. Afterward, a gate is formed on the second oxide layer. The first oxide layer, nitride layer, the second oxide layer and the gate compose a stack structure of the cell. Further, a spacer is formed on the side-wall of the stack structure.
摘要翻译：提供一种氮化物只读存储单元及其制造方法。首先，提供基板，在基板上形成第一氧化物层。接下来，经由第一气体和第二气体在第一氧化物层上沉积氮化物层。第一气体与第二气体的流量比为2:1。之后，在氮化物层上形成第二氧化物层。然后，在基板上形成位线区域。之后，在第二氧化物层上形成栅极。第一氧化物层，氮化物层，第二氧化物层和栅极构成电池的堆叠结构。此外，在堆叠结构的侧壁上形成间隔物。

10. 发明授权

US07749838B2 Fabricating method of non-volatile memory cell 有权
标题翻译：非易失性存储单元的制作方法
公开(公告)号：US07749838B2
公开(公告)日：2010-07-06
申请号：US11774381
申请日：2007-07-06
申请人： Chi-Pin Lu , Shing-Ann Luo
发明人： Chi-Pin Lu , Shing-Ann Luo
IPC分类号： H01L21/336 , H01L29/792
CPC分类号： H01L29/518 , H01L21/02164 , H01L21/02274 , H01L21/28282 , H01L21/31612 , H01L29/513
摘要： A super-silicon-rich oxide (SSRO) non-volatile memory cell includes a gate conductive layer on a substrate, a source/drain in the substrate at respective sides of the gate conductive layer, a tunneling dielectric layer between the gate conductive layer and the substrate, a SSRO layer serving as a charge trapping layer between the gate conductive layer and the tunneling dielectric layer, and an upper-dielectric layer between the gate conductive layer and the SSRO layer.
摘要翻译：超富硅氧化物（SSRO）非易失性存储单元包括衬底上的栅极导电层，栅极导电层各侧的衬底中的源极/漏极，栅极导电层和栅极导电层之间的隧道电介质层衬底，用作栅极导电层和隧道电介质层之间的电荷俘获层的SSRO层，以及在栅极导电层和SSRO层之间的上部介电层。

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