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    • 1. 发明授权
    • Flat panel display and method of manufacturing the same
    • 平板显示器及其制造方法
    • US08703589B2
    • 2014-04-22
    • US13454965
    • 2012-04-24
    • Cheol-Ho Park
    • Cheol-Ho Park
    • H01L21/20H01L21/36H01L21/84
    • H01L27/1262H01L27/1274
    • A flat panel display having a thin-film transistor (TFT) and a pixel unit and a method of manufacturing the same are disclosed. In one embodiment, the method includes forming a step difference layer having a relatively high step and a relatively low step on a substrate and forming an amorphous silicon layer on the step difference layer along a height shape of the step difference layer. The method further includes crystallizing the amorphous silicon layer into a crystalline silicon layer and polishing the crystalline silicon layer to form a planarized surface of the crystalline silicon layer having no height differences so that the crystalline silicon layer remains on a region corresponding to the low step and an active layer is formed. According to this method, crystallization protrusions are effectively removed from the active layer, and thus, stable brightness characteristics of the display apparatus are guaranteed.
    • 公开了一种具有薄膜晶体管(TFT)和像素单元的平板显示器及其制造方法。 在一个实施例中,该方法包括在衬底上形成具有相对较高台阶和相对较低台阶的台阶差分层,并沿台阶差层的高度形状在台阶差层上形成非晶硅层。 该方法还包括将非晶硅层结晶成晶体硅层并抛光晶体硅层以形成不具有高度差的晶体硅层的平坦化表面,使得晶体硅层保留在对应于低阶的区域上, 形成有源层。 根据该方法,从有源层有效地去除了结晶化突起,保证了显示装置的稳定的亮度特性。
    • 3. 发明申请
    • Crystallization apparatus using sequential lateral solidification
    • 使用顺序横向凝固的结晶装置
    • US20120111267A1
    • 2012-05-10
    • US13317694
    • 2011-10-26
    • Cheol-Ho Park
    • Cheol-Ho Park
    • B05C9/00B05C11/00
    • B23K26/064H01L21/67115H01L27/1285
    • A crystallization apparatus that performs crystallization on a substrate using sequential lateral solidification (SLS) includes a laser generating device for emitting a laser beam, a first telescope lens module and a second telescope lens module at one side of the laser generating device for minimizing a divergent angle of a laser beam emitted by the laser generating device; and a main optical system at one side of the second telescope lens module for uniformizing and amplifying a laser beam transmitted through the second telescope lens module. The main optical system is rotatably formed with respect to the laser generating device.
    • 使用连续横向固化(SLS)在基板上进行结晶的结晶装置包括用于发射激光束的激光发生装置,第一望远镜透镜模块和第二望远镜透镜模块,其位于激光发生装置的一侧,以最小化发散 由激光发生装置发射的激光束的角度; 以及在第二望远镜透镜模块的一侧的主光学系统,用于使透射通过第二望远镜透镜模块的激光束均匀化和放大。 主光学系统相对于激光发生装置可旋转地形成。
    • 4. 发明授权
    • Mask for crystallizing a semiconductor layer and method of crystallizing a semiconductor layer using the same
    • 用于使半导体层结晶的掩模和使用其使半导体层结晶的方法
    • US08163444B2
    • 2012-04-24
    • US12321985
    • 2009-01-27
    • Cheol-Ho Park
    • Cheol-Ho Park
    • G03F1/00C30B25/12
    • H01L21/0268B23K26/066H01L21/02532H01L21/02683H01L21/02686H01L21/02691H01L27/1285Y10T428/24314
    • A mask for crystallizing a semiconductor layer includes a plurality of first main-slit portions, a plurality of second main-slit portions, upper slit portion and lower slit portion. The first main-slit portions extend along an inclined direction with respect to a first direction. The second main-slit portions are spaced apart from the first main-slit portions. The upper slit portion is disposed on the first main-slit portions along a second direction to be parallel to the first main-slit portions, and extends partway over the second main-slit portions to be longer than the first main-slit portions. The lower slit portion is disposed under the second main-slit portions along the second direction to be parallel to the second main-slit portions, and extends partway under the first main-slit portions to be longer than the second main-slit portions.
    • 用于使半导体层结晶的掩模包括多个第一主狭缝部分,多个第二主狭缝部分,上部狭缝部分和下部狭缝部分。 第一主狭缝部分沿着相对于第一方向的倾斜方向延伸。 第二主狭缝部分与第一主狭缝部分间隔开。 上缝隙部分沿着与第一主狭缝部分平行的第二方向设置在第一主狭缝部分上,并且在第二主狭缝部分上方延伸成比第一主狭缝部分长。 下狭缝部分沿着第二方向设置在第二主狭缝部分的下方以与第二主狭缝部分平行,并且在第一主狭缝部分的下方延伸以比第二主狭缝部分长。
    • 9. 发明申请
    • Mask for sequential lateral solidification and method of performing sequential lateral solidification using the same
    • 用于顺序侧向固化的掩模和使用其进行顺序横向固化的方法
    • US20070264806A1
    • 2007-11-15
    • US11544924
    • 2006-10-05
    • Cheol Ho Park
    • Cheol Ho Park
    • H01L21/20H01L29/04C30B1/00
    • C30B13/24B23K26/066C30B29/06H01L21/02532H01L21/0268H01L21/02686H01L21/02691
    • Embodiments of a mask for sequential lateral solidification are disclosed herein. In some embodiments, a mask of the present disclosure comprises a transmission region including a first slit column having a plurality of first slits separated from one another by a predetermined interval, and a second slit column having a plurality of second slits separated from one another by a predetermined interval and disposed adjacent to and offset from the first slit column. An irradiated laser beam is substantially completely transmitted through the transmission region. In some embodiments, the mask includes a semi-transmission region including a first opening pattern disposed at least partially between adjacent first slits and having a plurality of first openings formed into a desired shape, and a second opening pattern disposed at least partially between adjacent second slits and having a plurality of second opening formed into a desired shape. A portion of less than all of the laser beam is transmitted through the semi-transmission region. A method of performing the sequential lateral solidification using the mask is also disclosed herein.
    • 本文公开了用于连续侧向固化的掩模的实施例。 在一些实施例中,本公开的掩模包括传输区域,该传输区域包括具有彼此以预定间隔分开的多个第一狭缝的第一狭缝列和具有多个第二狭缝的第二狭缝列,第二狭缝通过 预定间隔并且设置成与第一狭缝柱相邻并偏移。 照射的激光束基本上完全透射通过透射区域。 在一些实施例中,掩模包括半透射区域,其包括至少部分地设置在相邻的第一狭缝之间并且具有形成为期望形状的多个第一开口的第一开口图案,以及至少部分地设置在相邻的第二狭缝之间的第二开口图案 狭缝并且具有形成为期望形状的多个第二开口。 少于全部的激光束的一部分透过半透射区域。 本文还公开了使用掩模进行顺序横向固化的方法。