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1. 发明授权

US5329225A Thin film superconductor inductor with shield for high frequency resonant circuit 失效
标题翻译：薄膜超导体电感与屏蔽高频谐振电路
公开(公告)号：US5329225A
公开(公告)日：1994-07-12
申请号：US970515
申请日：1992-11-02
申请人： Waseem A. Roshen , Antonio A. Mogro-Campero , James W. Bray , Charles S. Korman
发明人： Waseem A. Roshen , Antonio A. Mogro-Campero , James W. Bray , Charles S. Korman
IPC分类号： H01F6/06 , H01F7/22
CPC分类号： H01F6/06 , Y10S336/01 , Y10S505/87 , Y10S505/88
摘要： An inductor uses high temperature superconductors in order to obtain high Q for high frequency operation. The superconductors are applied as thin films to substrates. In some embodiments, superconductor thin films are applied to opposite sides of the same substrate. Superconductive thin films are applied outside the magnetic field establishing superconductive thin films in order to shield against leakage of the magnetic field beyond the inductor. The inductor is connected to a capacitor to realize a resonant circuit used in a power conversion system.
摘要翻译：电感使用高温超导体，以获得高Q值的高频运行。超导体作为薄膜应用于基板。在一些实施例中，超导体薄膜被施加到相同衬底的相对侧。超导薄膜被施加在磁场外部，建立超导薄膜，以便防止磁场超出电感器的泄漏。电感器连接到电容器以实现在功率转换系统中使用的谐振电路。

2. 发明授权

US4998151A Power field effect devices having small cell size and low contact resistance 失效
标题翻译：具有小单元尺寸和低接触电阻的功率场效应器件
公开(公告)号：US4998151A
公开(公告)日：1991-03-05
申请号：US337684
申请日：1989-04-13
申请人： Charles S. Korman , Krishna Shenai , Bantval J. Baliga , Patricia A. Piacente , Bernard Gorowitz , Tat-Sing P. Chow , Manjin J. Kim
发明人： Charles S. Korman , Krishna Shenai , Bantval J. Baliga , Patricia A. Piacente , Bernard Gorowitz , Tat-Sing P. Chow , Manjin J. Kim
IPC分类号： H01L21/285 , H01L21/336 , H01L29/417 , H01L29/45 , H01L29/745 , H01L29/78
CPC分类号： H01L29/7802 , H01L21/28512 , H01L21/28518 , H01L21/28525 , H01L29/456 , H01L29/665 , H01L29/7455
摘要： A multi-cellular power field effect semiconductor device includes a high conductivity layer of metal or a metal silicide disposed in intimate contact with the source region of the device. This high conductivity layer is self-aligned with respect to the aperture in the gate electrode through which the source region is diffused. The presence of this high conductivity layer allows a substantially smaller contact window to be employed for making contact between the final metallization and the source region. As a consequence, the aperture in the gate electrode and the cell size of the device can both be substantially reduced. The device has substantially improved operating characteristics. A method of producing the device is also described.

3. 发明授权

US5532512A Direct stacked and flip chip power semiconductor device structures 失效
标题翻译：直接堆叠和倒装芯片功率半导体器件结构
公开(公告)号：US5532512A
公开(公告)日：1996-07-02
申请号：US316996
申请日：1994-10-03
申请人： Raymond A. Fillion , Eric J. Wildi , Charles S. Korman , Sayed-Amr El-Hamamsy , Steven M. Gasworth , Michael W. DeVre , James F. Burgess
发明人： Raymond A. Fillion , Eric J. Wildi , Charles S. Korman , Sayed-Amr El-Hamamsy , Steven M. Gasworth , Michael W. DeVre , James F. Burgess
IPC分类号： H01L25/07 , H02M7/00 , H01L23/02 , H01L23/48 , H05K7/20
CPC分类号： H01L25/074 , H01G4/306 , H01L25/071 , H02M7/003 , H01L2224/73253 , H01L2924/01322 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/3011
摘要： Power semiconductor device structures and assemblies with improved heat dissipation characteristics and low impedance interconnections include a thermally-conductive dielectric layer, such as diamondlike carbon (DLC) overlying at least portions of the active major surface of a semiconductor chip, with vias formed in the dielectric layer in alignment with contact pads on the active major surface. A patterned metallization layer is formed over the thermally-conductive dielectric layer, with portions of the metallization layer extending through the vias into electrical contact with the chip contact pads. A metal structure is electrically and thermally coupled to selected areas of the patterned metallization, such as by solder bonding or by a eutectic bonding process. In different embodiments, the metal structure may comprise a metal conductor bonded to the opposite major surface of another power semiconductor device structure, a heat-dissipating device-mounting structure, or simply a low-impedance lead.
摘要翻译：具有改善的散热特性和低阻抗互连的功率半导体器件结构和组件包括导热介电层，例如覆盖在半导体芯片的有源主表面的至少一部分上的类金刚石碳（DLC），以及在电介质中形成的通孔层与主动主表面上的接触垫对准。图案化的金属化层形成在导热电介质层之上，金属化层的部分延伸穿过通孔与芯片接触焊盘电接触。金属结构电气和热耦合到图案化金属化的选定区域，例如通过焊接或通过共晶粘合工艺。在不同的实施例中，金属结构可以包括结合到另一功率半导体器件结构的相对主表面的金属导体，散热器件安装结构或简单的低阻抗引线。

4. 发明授权

US5119153A Small cell low contact resistance rugged power field effect devices and method of fabrication 失效
标题翻译：小电池低接触电阻坚固的电场效应器件及其制造方法
公开(公告)号：US5119153A
公开(公告)日：1992-06-02
申请号：US588515
申请日：1990-09-24
申请人： Charles S. Korman , Krishna Shenai
发明人： Charles S. Korman , Krishna Shenai
IPC分类号： H01L21/331 , H01L21/332 , H01L21/336 , H01L29/739 , H01L29/74 , H01L29/78
CPC分类号： H01L29/66333 , H01L29/66378 , H01L29/665 , H01L29/66712 , H01L29/7395 , H01L29/742 , H01L29/7802 , Y10S257/90
摘要： A multi-cellular power field effect semiconductor device has compact cells including a heavily doped portion of a body region which is self-aligned with respect to an aperture in the gate electrode. The intercept of this heavily doped portion of the body region with the upper surface of the device may also be self-aligned with respect to the aperture and the gate electrode. A method of producing the device is also disclosed.
摘要翻译：多蜂窝功率场效应半导体器件具有紧凑的单元，其包括相对于栅电极中的孔自对准的体区的重掺杂部分。具有器件的上表面的体区的该重掺杂部分的截距也可以相对于孔径和栅电极自对准。还公开了一种制造该器件的方法。

5. 发明授权

US4890143A Protective clamp for MOS gated devices 失效
标题翻译： MOS门控器件的保护钳
公开(公告)号：US4890143A
公开(公告)日：1989-12-26
申请号：US225320
申请日：1988-07-28
申请人： Bantval J. Baliga , Charles S. Korman
发明人： Bantval J. Baliga , Charles S. Korman
IPC分类号： H01L27/02 , H01L29/78
CPC分类号： H01L29/7808 , H01L27/0255
摘要： A self-protected MOS gated device includes a PN junction disposed in an electrical path between the source electrode and the gate contact of the device and integrally formed with a DMOS cell of the device to protect the DMOS cell from surge voltages. The PN junction has conductivity characteristics selected to provide junction breakdown at a predetermined voltage level and at a predetermined location along the junction.
摘要翻译：自保护MOS门控器件包括PN结，其设置在器件的源电极和栅极触点之间的电气路径中，并与器件的DMOS单元整体形成，以保护DMOS电池免受浪涌电压的影响。 PN结具有选择的导电特性，以在预定电压电平和沿着结的预定位置处提供结击穿。

6. 发明授权

US5525941A Magnetic and electromagnetic circuit components having embedded magnetic material in a high density interconnect structure 失效
标题翻译：具有高密度互连结构的嵌入式磁性材料的磁性和电磁电路部件
公开(公告)号：US5525941A
公开(公告)日：1996-06-11
申请号：US43166
申请日：1993-04-01
申请人： Waseem A. Roshen , Charles S. Korman , Wolfgang Daum
发明人： Waseem A. Roshen , Charles S. Korman , Wolfgang Daum
IPC分类号： H01F17/00 , H01F19/04 , H01F41/04 , H01L23/538 , H01L23/66 , H01P5/00 , H01P1/36 , H05K1/16
CPC分类号： H01L23/5389 , H01F17/0006 , H01F19/04 , H01F41/042 , H01L23/66 , H01L24/24 , H01L24/82 , H01L2224/2402 , H01L2224/24227 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01047 , H01L2924/01052 , H01L2924/01057 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , Y10T29/4902 , Y10T29/49075
摘要： A magnetic or electromagnetic circuit component includes an embedded magnetic material (e.g., ferromagnetic) in an HDI structure with alternating dielectric and metal or winding layers. In one embodiment, the ferromagnetic material is situated in a substrate well, or cavity, with or without an adhesive. Alternatively, the ferromagnetic material is co-fired with the ceramic substrate and then machined to achieve a required core shape. An electroplating process is employed to construct the metal layers, such process including differential plating for varying the thickness of metal layers and/or other portions of the circuit. Laser ablation or any other suitable technique is employed to make through-holes for insertion of the posts of a ferromagnetic core plate used to complete a magnetic circuit, if required. Advantageously, a magnetic or electromagnetic component may have a height of less than about 0.1 inch. Furthermore, such magnetic or electromagnetic circuit components allow for very low inductance interconnections between these components and other circuit elements. Moreover, in a power supply, for example, not only can the complete power supply be built using HDI technology, but power density is increased at relatively low cost and at a high level of reproducibility.
摘要翻译：磁性或电磁电路部件包括具有交替电介质和金属或绕组层的HDI结构中的嵌入式磁性材料（例如铁磁性）。在一个实施例中，铁磁材料位于具有或不具有粘合剂的基底孔或空腔中。或者，铁磁材料与陶瓷基体共烧，然后机加工以实现所需的芯形。使用电镀工艺来构造金属层，这种工艺包括用于改变金属层的厚度和/或电路的其它部分的差分电镀。如果需要，使用激光烧蚀或任何其它合适的技术来制造用于插入用于完成磁路的铁磁芯板的柱的通孔。有利地，磁性或电磁部件可以具有小于约0.1英寸的高度。此外，这种磁性或电磁电路部件允许这些部件和其它电路元件之间的非常低的电感互连。此外，在电源中，例如，不仅可以使用HDI技术构建完整的电源，而且功率密度以相对低的成本和高的再现性提高。

7. 发明授权

US5119283A High power factor, voltage-doubler rectifier 失效
标题翻译：高功率因数，倍压整流器
公开(公告)号：US5119283A
公开(公告)日：1992-06-02
申请号：US712371
申请日：1991-06-10
申请人： Robert L. Steigerwald , Charles S. Korman
发明人： Robert L. Steigerwald , Charles S. Korman
IPC分类号： H02M7/10 , H02M1/00 , H02M1/10 , H02M1/42 , H02M7/06 , H02M7/12 , H02M9/06
CPC分类号： H02M1/4208 , H02M1/10 , H02M2001/4275 , Y02B70/126 , Y02P80/112
摘要： A voltage-doubler rectifier includes an ac fullbridge diode rectifier and a dc-to-dc converter having two output boost circuits. One of the output boost circuits is coupled between the rectifier and a dc link, and the other output boost circuit is coupled, with opposite polarity, between the rectifier and the circuit common. Two series-connected filter capacitors are also coupled between the dc link and the circuit common. In a preferred embodiment, the two output boost circuits each comprise either a series, parallel, or combination series/parallel resonant circuit and a rectifier. A switch is coupled between the junction joining one pair of diodes of the rectifier and the junction joining the two filter capacitors. For a relatively high ac line voltage, the switch is open, and the circuit operates in a low boost mode. For a relatively low ac line voltage, the switch is closed, and the circuit operates in a high boost, or voltage-doubling, mode.
摘要翻译：电压倍增器整流器包括交流全桥二极管整流器和具有两个输出升压电路的直流 - 直流转换器。输出升压电路中的一个耦合在整流器和直流链路之间，另一个输出升压电路以相反的极性耦合在整流器和电路之间。两个串联的滤波电容器也耦合在直流链路和电路之间。在优选实施例中，两个输出升压电路各自包括串联，并联或组合串联/并联谐振电路和整流器。开关耦合在连接整流器的一对二极管的接点和连接两个滤波电容器的接头之间。对于相对较高的交流线路电压，开关断开，电路工作在低升压模式。对于相对较低的交流线路电压，开关闭合，电路工作在高增压或倍压模式。

8. 发明授权

US4903189A Low noise, high frequency synchronous rectifier 失效
标题翻译：低噪声，高频同步整流器
公开(公告)号：US4903189A
公开(公告)日：1990-02-20
申请号：US186983
申请日：1988-04-27
申请人： Khai D. T. Ngo , Robert L. Steigerwald , John P. Walden , Bantval J. Baliga , Charles S. Korman , Hsueh-Rong Chang
发明人： Khai D. T. Ngo , Robert L. Steigerwald , John P. Walden , Bantval J. Baliga , Charles S. Korman , Hsueh-Rong Chang
IPC分类号： H01L29/772 , H01L29/78 , H02M7/12 , H02M7/21 , H02M7/217 , H03K17/687
CPC分类号： H01L29/7722 , H01L29/7828 , H02M7/217
摘要： A synchronous rectifier is able to operate at higher frequencies and provides an output having lower noise than prior art FET synchronous rectifier system by using field effect switching devices which contain only one conductivity type of semiconductor material and connecting a high speed, low charge storage diode in parallel. Schottky diodes are preferred whereby there is no junction diode in the structure. Conventional FETs may be used when paralleled with a Schottky diode which prevents the FET's parasitic internal diode from becoming conductive.

9. 发明授权

US5609946A High frequency, high density, low profile, magnetic circuit components 失效
标题翻译：高频，高密度，低剖面，磁路元件
公开(公告)号：US5609946A
公开(公告)日：1997-03-11
申请号：US538488
申请日：1995-10-03
申请人： Charles S. Korman , Israel S. Jacobs , John A. Mallick , Waseem A. Roshen
发明人： Charles S. Korman , Israel S. Jacobs , John A. Mallick , Waseem A. Roshen
IPC分类号： H01F10/32 , H01F17/04 , B32B9/00
CPC分类号： B82Y25/00 , H01F10/3254 , H01F17/04 , Y10T428/24917 , Y10T428/24926
摘要： A high frequency, high density, low profile magnetic circuit component includes a magnetic core having a first magnetic layer and a second magnetic layer with a conductive layer deposited therebetween, each magnetic layer being a multilayer structure comprised of alternating magnetic and insulating films. The magnetic films are anisotropic and are driven along their magnetic hard axis in order to reduce excess eddy current losses. To reduce fringing field eddy current losses, a distributed air gap is structured in the magnetic layers. The magnetic core has a distributed air gap formed therein in order to minimize eddy current losses in the conductive layer. The conductive layer has a conductive material patterned on a insulating substrate and is situated between the first and second magnetic layers such that the conductive material extends beyond the peripheries of the first and second magnetic layers, thereby maximizing the amount of magnetic material that is driven in the hard axis.
摘要翻译：高频，高密度，低轮廓的磁路组件包括具有第一磁性层的磁芯和其间沉积有导电层的第二磁性层，每个磁性层是由交替的磁性和绝缘膜构成的多层结构。磁性膜是各向异性的，并沿其磁性硬轴驱动，以减少额外的涡流损耗。为了减少边缘场涡流损耗，在磁层中形成分布式气隙。磁芯具有形成在其中的分布式气隙，以便最小化导电层中的涡流损耗。导电层具有在绝缘基板上图案化的导电材料，并且位于第一和第二磁性层之间，使得导电材料延伸超过第一和第二磁性层的周边，从而最大化驱动的磁性材料的量硬轴。

10. 发明授权

US5234851A Small cell, low contact assistance rugged power field effect devices and method of fabrication 失效
标题翻译：小电池，低接触帮助坚固的电力场效应器件和制造方法
公开(公告)号：US5234851A
公开(公告)日：1993-08-10
申请号：US829667
申请日：1992-02-03
申请人： Charles S. Korman , Krishna Shenai
发明人： Charles S. Korman , Krishna Shenai
IPC分类号： H01L21/331 , H01L21/332 , H01L21/336 , H01L29/739 , H01L29/74 , H01L29/78
CPC分类号： H01L29/66333 , H01L29/66378 , H01L29/665 , H01L29/66712 , H01L29/7395 , H01L29/742 , H01L29/7802
摘要： A multi-cellular power field effect semiconductor device has compact cells including a heavily doped portion of a body region which is self-aligned with respect to an aperture in the gate electrode. The intercept of this heavily doped portion of the body region with the upper surface of the device may also be self-aligned with respect to the aperture and the gate electrode. A method of producing the device is also disclosed.
摘要翻译：多蜂窝功率场效应半导体器件具有紧凑的单元，其包括相对于栅电极中的孔自对准的体区的重掺杂部分。具有器件的上表面的体区的该重掺杂部分的截距也可以相对于孔径和栅电极自对准。还公开了一种制造该器件的方法。

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