会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明授权
    • ZAP-70 active compounds
    • ZAP-70活性化合物
    • US08642606B2
    • 2014-02-04
    • US13244071
    • 2011-09-23
    • Prabha N. IbrahimChao Zhang
    • Prabha N. IbrahimChao Zhang
    • A01N43/90A61K31/519C07D487/00
    • C07D487/04
    • Compounds of Formula I: and salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof and uses thereof are described. In certain aspects and embodiments, the described compounds or salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof are active on one or more protein kinases, including a Zeta-chain-associated protein kinase 70 (ZAP-70), and any mutations thereof. Also described are methods of use thereof to treat diseases and conditions, including diseases and conditions associated with increased expression of ZAP-70 cancer, B-cell chronic lymphocytic leukemia, aggressive B-cell chronic lymphocytic leukemia, an allergy-related disease or an allergic inflammation.
    • 描述了式I化合物及其盐,其制剂,其结合物,其衍生物,其形式及其用途。 在某些方面和实施方案中,所述的化合物或其盐,其制剂,其缀合物,其衍生物,其形式在一种或多种蛋白激酶(包括Zeta-链相关蛋白激酶70(ZAP-70))和 其任何突变。 还描述了其用于治疗疾病和病症的方法,包括与增加的ZAP-70癌,B细胞慢性淋巴细胞白血病,侵袭性B细胞慢性淋巴细胞性白血病,过敏相关疾病或过敏性疾病相关的疾病和病症 炎。
    • 8. 发明授权
    • Semiconductor device manufacturing method
    • 半导体器件制造方法
    • US08586405B2
    • 2013-11-19
    • US13369738
    • 2012-02-09
    • Chao ZhangGuanping WuBo LiuZhitang Song
    • Chao ZhangGuanping WuBo LiuZhitang Song
    • H01L29/02
    • H01L27/1021H01L21/74H01L27/2409H01L29/66136H01L29/861
    • A method of manufacturing a semiconductor device and a semiconductor device made by the method is disclosed. The method comprises forming a buried N+ layer in an upper portion of a P-type substrate; performing ion implantation on the buried N+ layer; annealing the buried N+ layer; forming an epitaxial semiconductor layer on the buried N+ layer through epitaxial deposition, wherein, an upper portion of said epitaxial semiconductor layer and a portion underlying said P+ region of said epitaxial semiconductor layer are doped to form a P+ region and an N− region, respectively. Increasing the ion implant dosage of the BNL layer, adjusting the method of annealing the BNL layer to increase the width of the BNL layer, or increasing the thickness of the EPI layer, reduces the vertical BJT current gain and suppressed the substrate leakage current.
    • 公开了一种通过该方法制造半导体器件和半导体器件的方法。 该方法包括在P型衬底的上部形成掩埋的N +层; 对掩埋的N +层进行离子注入; 退火埋N +层; 通过外延沉积在掩埋的N +层上形成外延半导体层,其中,所述外延半导体层的上部和所述外延半导体层的所述P +区下面的部分被掺杂以分别形成P +区和N区 。 增加BNL层的离子注入剂量,调整BNL层的退火方法以增加BNL层的宽度或增加EPI层的厚度,减小垂直BJT电流增益并抑制衬底漏电流。