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1. 发明授权

US10618653B2 Charging system by autonomous guide of drone 有权
公开(公告)号：US10618653B2
公开(公告)日：2020-04-14
申请号：US15579600
申请日：2016-03-15
申请人： Chan Hee Han
发明人： Chan Hee Han , Gyu Sik Shin
IPC分类号： B64C39/02 , H02J7/35 , H02J7/02 , H02J7/00 , H02J50/80 , B64F1/22
CPC分类号： B64C39/024 , B64C39/02 , B64F1/222 , H02J7/00 , H02J7/0027 , H02J7/00036 , H02J7/0047 , H02J7/02 , H02J7/025 , H02J7/35 , H02J50/80 , B64C2201/066 , B64C2201/141
摘要： A charging system by autonomous guide of drone includes a drone for being autonomously guided to a charging station on the basis of location and altitude coordinates for charging and for transmitting a charged information to a control station when the charging is completed; a charging station for recognizing the approach of the drone within a chargeable range and for controlling the guide flight of the drone and transmitting a charged information to the control station when the charging is completed; and a control station for detecting the state of charge of the drone in real time and for transmitting a location coordinate and altitude coordinate of the charging station to the drone for guiding flight to the charging station.

2. 发明申请

US20130180634A1 Grain-Oriented Electric Steel Sheet Having Superior Magnetic Property and Method for Manufacturing Same 有权
标题翻译：具有优异磁性的晶粒取向电工钢板及其制造方法
公开(公告)号：US20130180634A1
公开(公告)日：2013-07-18
申请号：US13823962
申请日：2011-12-21
申请人： Kyu-Seok Han , Jae-Soo Lim , Byung-Deug Hong , Chan-Hee Han
发明人： Kyu-Seok Han , Jae-Soo Lim , Byung-Deug Hong , Chan-Hee Han
IPC分类号： H01F1/01
CPC分类号： H01F1/01 , C21D8/12 , C21D8/1244 , C21D8/1272 , C21D2201/05 , C21D2211/004 , C22C38/00 , C22C38/001 , C22C38/002 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/60 , C30B29/52
摘要： Provided is a grain-oriented electric steel sheet and a method for manufacturing same, the steel sheet having superior magnetic properties. The method comprises heating a slab comprising 2.0 to 4.5 weight % of Si, 0.001 to 0.10 weight % of C, 0.010 weight % or lower of Al, 0.08 weight % or lower of Mn, 0.005 weight % or lower of N, 0.002 to 0.050 weight % of S, the remainder being Fe and other unavoidable impurities, performing hot-rolling of the heated slab, performing cold-rolling one time or two or more times including an intermediate annealing, performing decarbonization and re-crystallizing annealing, and performing secondary re-crystallizing annealing.
摘要翻译：提供一种晶粒取向电工钢板及其制造方法，该钢板具有优异的磁特性。该方法包括加热含有2.0〜4.5重量％的Si，0.001〜0.10重量％的C，0.010重量％以下的Al，0.08重量％以下的Mn，0.005重量％以下的N，0.002〜0.050 S的余量，剩余部分为Fe等不可避免的杂质，进行加热板坯的热轧，进行中间退火，进行中间退火，进行脱碳化和再结晶退火的一次或两次以上的冷轧，并进行二次再结晶退火。

3. 发明授权

US6074486A Apparatus and method for manufacturing a semiconductor device having hemispherical grains 失效
标题翻译：用于制造具有半球形晶粒的半导体器件的装置和方法
公开(公告)号：US6074486A
公开(公告)日：2000-06-13
申请号：US62715
申请日：1998-04-20
申请人： Chang-jip Yang , Chan-hee Han , Young-kyou Park , Jae-wook Kim
发明人： Chang-jip Yang , Chan-hee Han , Young-kyou Park , Jae-wook Kim
IPC分类号： H01L21/20 , C23C16/02 , C23C16/24 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： H01L28/84 , C23C16/0272 , C23C16/24 , C23C16/4412 , C23C16/455 , C23C16/45578
摘要： An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being different from one another so as to uniformly supply a source gas. A loadlock chamber is placed under the processing chamber. A boat loaded with wafers is moved from the loadlock chamber to the processing chamber, with the boat being rotated while the source gas is supplied. The processing chamber and loadlock chambers are connected to a vacuum system having two vacuum pumps for maintaining a vacuum in the chambers. A third vacuum pump, connected to the processing chamber, is operated when the vacuum in the processing chamber reaches a predetermined value.
摘要翻译：一种用于在半导体存储器件的电容器下电极上形成HSG硅层的装置和方法。该装置包括具有多个源气体供给喷嘴的处理室，喷嘴的长度彼此不同，以便均匀地供应源气体。负荷室放置在处理室下方。装载有晶片的船从装载室移动到处理室，同时在供应源气体的同时使船旋转。处理室和负载锁定室连接到具有两个真空泵的真空系统，用于在腔室中保持真空。当处理室中的真空达到预定值时，连接到处理室的第三真空泵被操作。

4. 发明授权

US06312987B1 Method for manufacturing semiconductor device having hemispherical grain polysilicon film 失效
标题翻译：具有半球状晶粒多晶硅膜的半导体器件的制造方法
公开(公告)号：US06312987B1
公开(公告)日：2001-11-06
申请号：US09071681
申请日：1998-05-01
申请人： Chan-hee Han , Young-ho Kang , Chang-jip Yang , Young-kyou Park
发明人： Chan-hee Han , Young-ho Kang , Chang-jip Yang , Young-kyou Park
IPC分类号： H01L218242
CPC分类号： H01L28/84
摘要： A method for forming a hemispherical grain polysilicon layer on an amorphous silicon film increases the surface area of the layer by first forming silicon crystal nuclei on the film, and then enlarging the nuclei before annealing. The nuclei are formed on the amorphous silicon film loading a substrate having the amorphous silicon film into a chamber and injecting a silicon source gas into the chamber at a first, low flow rate which allows the pressure of the chamber to be reduced, thereby increasing the density of the crystal nuclei. A silicon source gas is then injected into the chamber at a second, higher flow rate, thereby enlarging the silicon crystal nuclei on the amorphous layer. The resulting structure is then annealed to form a hemispherical grain polysilicon layer having a large surface area due to the irregular surface of the polysilicon layer. A dielectric layer is then formed on the polysilicon layer, and an impurity-doped polycrystaline silicon layer is deposited over the dielectric layer to form a capacitor.
摘要翻译：在非晶硅膜上形成半球形晶粒多晶硅层的方法通过首先在膜上形成硅晶核，然后在退火之前放大核来增加该层的表面积。在非晶硅膜上形成核，该非晶硅膜将具有非晶硅膜的衬底装载到腔室中，并以第一低流量将硅源气体注入腔室，该第一低流量允许腔室的压力减小，从而增加晶核的密度。然后将硅源气体以第二较高的流速注入室中，从而在非晶层上扩大硅晶核。然后将所得结构退火以形成由于多晶硅层的不规则表面而具有大表面积的半球状晶粒多晶硅层。然后在多晶硅层上形成电介质层，并且在电介质层上沉积杂质掺杂的多晶硅层以形成电容器。

5. 发明申请

US20170008414A1 BILLING SYSTEM FOR ELECTRIC VEHICLE CHARGING 审中-公开
标题翻译：电动车充电计费系统
公开(公告)号：US20170008414A1
公开(公告)日：2017-01-12
申请号：US14793930
申请日：2015-07-08
申请人： Chan Hee HAN
发明人： Chan Hee HAN , Gyu Sik SHIN
IPC分类号： B60L11/18
CPC分类号： B60L11/1848 , B60L53/14 , B60L53/63 , B60L53/65 , B60L53/665 , B60L2240/36 , B60L2240/70 , B60L2240/80 , B60L2260/44 , Y02E60/721 , Y02T10/7005 , Y02T10/7072 , Y02T10/7291 , Y02T90/121 , Y02T90/128 , Y02T90/14 , Y02T90/16 , Y02T90/163 , Y02T90/169 , Y04S10/126 , Y04S30/14
摘要： Disclosed herein is a billing system for electric vehicle charging, which enables optimal charging and billing, considering details associated with electric vehicle charging, such as charging quality corresponding to charging power supply states, and an estimated rate determined differently according to a charging time and a charging power quantity. The present invention has a maximum electricity quantity sensing function, a charging electricity quantity setting function based on a sensing value, and a charging condition setting function based on a power reserve rate on a basis of a time, a user, an area, and a power company, a regional power situation, and the like. Also, while continuously managing a maximum charging electricity quantity, a voltage/current fluctuation point, an electricity supplier-charging device-connection information, a fee corresponding to a charging time, and fee information corresponding to a charging electricity quantity, optimal charging and billing are performed according to charging conditions.
摘要翻译：这里公开了一种用于电动车辆充电的计费系统，其考虑与电动车辆充电有关的细节，例如与充电电源状态相对应的充电质量，以及根据充电时间和充电电量。本发明具有最大电量感测功能，基于感测值的充电电量设定功能，以及基于时间，用户，区域，和用户的功率储备率的充电条件设定功能电力公司，区域电力情况等。此外，在持续管理最大充电电量，电压/电流波动点，电力供应商充电装置连接信息，与充电时间相对应的费用以及与充电电量相对应的费用信息，最佳充电和计费根据充电条件进行。

6. 发明授权

US09240265B2 Method for manufacturing grain-oriented electrical steel sheet having superior magnetic property 有权
标题翻译：具有优异磁性能的方向性电磁钢板的制造方法
公开(公告)号：US09240265B2
公开(公告)日：2016-01-19
申请号：US13823962
申请日：2011-12-21
申请人： Kyu-Seok Han , Jae-Soo Lim , Byung-Deug Hong , Chan-Hee Han
发明人： Kyu-Seok Han , Jae-Soo Lim , Byung-Deug Hong , Chan-Hee Han
IPC分类号： C21D8/12 , H01F1/01 , C22C38/00 , C22C38/06
CPC分类号： H01F1/01 , C21D8/12 , C21D8/1244 , C21D8/1272 , C21D2201/05 , C21D2211/004 , C22C38/00 , C22C38/001 , C22C38/002 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/60 , C30B29/52
摘要： Provided is a grain-oriented electric steel sheet and a method for manufacturing same, the steel sheet having superior magnetic properties. The method comprises heating a slab comprising 2.0 to 4.5 weight % of Si, 0.001 to 0.10 weight % of C, 0.010 weight % or lower of Al, 0.08 weight % or lower of Mn, 0.005 weight % or lower of N, 0.002 to 0.050 weight % of S, the remainder being Fe and other unavoidable impurities, performing hot-rolling of the heated slab, performing cold-rolling one time or two or more times including an intermediate annealing, performing decarbonization and re-crystallizing annealing, and performing secondary re-crystallizing annealing.
摘要翻译：提供一种晶粒取向电工钢板及其制造方法，该钢板具有优异的磁特性。该方法包括加热含有2.0〜4.5重量％的Si，0.001〜0.10重量％的C，0.010重量％以下的Al，0.08重量％以下的Mn，0.005重量％以下的N，0.002〜0.050 S的余量，剩余部分为Fe等不可避免的杂质，进行加热板坯的热轧，进行中间退火，进行中间退火，进行脱碳化和再结晶退火的一次或两次以上的冷轧，并进行二次再结晶退火。

7. 发明授权

US06953739B2 Method for manufacturing a semiconductor device having hemispherical grains at very low atmospheric pressure using first, second, and third vacuum pumps 失效
标题翻译：使用第一，第二和第三真空泵制造具有在非常低的大气压下的半球形晶粒的半导体器件的方法
公开(公告)号：US06953739B2
公开(公告)日：2005-10-11
申请号：US10704985
申请日：2003-11-12
申请人： Chang-jip Yang , Chan-hee Han , Young-kyou Park , Jae-wook Kim
发明人： Chang-jip Yang , Chan-hee Han , Young-kyou Park , Jae-wook Kim
IPC分类号： C23C16/02 , C23C16/24 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/205
CPC分类号： H01L28/84 , C23C16/0272 , C23C16/24 , C23C16/4412 , C23C16/455 , C23C16/45578 , Y10S438/964 , Y10T29/41
摘要： An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being different from one another so as to uniformly supply a source gas. A loadlock chamber is placed under the processing chamber. A boat loaded with wafers is moved from the loadlock chamber to the processing chamber, with the boat being rotated while the source gas is supplied. The processing chamber and loadlock chambers are connected to a vacuum system having two vacuum pumps for maintaining a vacuum in the chambers. A third vacuum pump, connected to the processing chamber, is operated when the vacuum in the processing chamber reaches a predetermined value.
摘要翻译：一种用于在半导体存储器件的电容器下电极上形成HSG硅层的装置和方法。该装置包括具有多个源气体供给喷嘴的处理室，喷嘴的长度彼此不同，以便均匀地供应源气体。负荷室放置在处理室下方。装载有晶片的船从装载室移动到处理室，同时在供应源气体的同时使船旋转。处理室和负载锁定室连接到具有两个真空泵的真空系统，用于在腔室中保持真空。当处理室中的真空达到预定值时，连接到处理室的第三真空泵被操作。

8. 发明申请

US20180141657A1 CHARGING SYSTEM BY AUTONOMOUS GUIDE OF DRONE 审中-公开
公开(公告)号：US20180141657A1
公开(公告)日：2018-05-24
申请号：US15579600
申请日：2016-03-15
申请人： Chan Hee HAN
发明人： Chan Hee HAN , Gyu Sik SHIN
IPC分类号： B64C39/02 , H02J7/00 , H02J7/02 , B64F1/22
CPC分类号： B64C39/024 , B64C39/02 , B64C2201/066 , B64C2201/141 , B64F1/222 , H02J7/00 , H02J7/0004 , H02J7/0027 , H02J7/0047 , H02J7/02 , H02J7/025 , H02J7/35 , H02J50/80
摘要： A charging system by autonomous guide of drone includes a drone for being autonomously guided to a charging station on the basis of location and altitude coordinates for charging and for transmitting a charged information to a control station when the charging is completed; a charging station for recognizing the approach of the drone within a chargeable range and for controlling the guide flight of the drone and transmitting a charged information to the control station when the charging is completed; and a control station for detecting the state of charge of the drone in real time and for transmitting a location coordinate and altitude coordinate of the charging station to the drone for guiding flight to the charging station.

9. 发明授权

US06673673B1 Method for manufacturing a semiconductor device having hemispherical grains 失效
标题翻译：具有半球形晶粒的半导体器件的制造方法
公开(公告)号：US06673673B1
公开(公告)日：2004-01-06
申请号：US09519661
申请日：2000-03-06
申请人： Chang-jip Yang , Chan-hee Han , Young-kyou Park , Jae-wook Kim
发明人： Chang-jip Yang , Chan-hee Han , Young-kyou Park , Jae-wook Kim
IPC分类号： H01L218242
CPC分类号： H01L28/84 , C23C16/0272 , C23C16/24 , C23C16/4412 , C23C16/455 , C23C16/45578 , Y10S438/964 , Y10T29/41
摘要： An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being different from one another so as to uniformly supply a source gas. A loadlock chamber is placed under the processing chamber. A boat loaded with wafers is moved from the loadlock chamber to the processing chamber, with the boat being rotated while the source gas is supplied. The processing chamber and loadlock chambers are connected to a vacuum system having two vacuum pumps for maintaining a vacuum in the chambers. A third vacuum pump, connected to the processing chamber, is operated when the vacuum in the processing chamber reaches a predetermined value.
摘要翻译：一种用于在半导体存储器件的电容器下电极上形成HSG硅层的装置和方法。该装置包括具有多个源气体供给喷嘴的处理室，喷嘴的长度彼此不同，以便均匀地供应源气体。负荷室放置在处理室下方。装载有晶片的船从装载室移动到处理室，同时在供应源气体的同时使船旋转。处理室和负载锁定室连接到具有两个真空泵的真空系统，用于在腔室中保持真空。当处理室中的真空达到预定值时，连接到处理室的第三真空泵被操作。

10. 发明授权

US5821152A Methods of forming hemispherical grained silicon electrodes including multiple temperature steps 失效
标题翻译：形成半球形硅电极的方法包括多个温度步骤
公开(公告)号：US5821152A
公开(公告)日：1998-10-13
申请号：US950962
申请日：1997-10-15
申请人： Chan-hee Han , Chang-jip Yang , Young-kyou Park , Jae-wook Kim
发明人： Chan-hee Han , Chang-jip Yang , Young-kyou Park , Jae-wook Kim
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/108 , H01L21/20
CPC分类号： H01L28/84
摘要： A method of forming a hemispherical grained silicon electrode includes the steps of forming an amorphous silicon layer on an integrated circuit substrate, and heating the integrated circuit substrate and the amorphous silicon layer to a first deposition temperature. The amorphous silicon layer is exposed to a source gas including silicon while maintaining the first deposition temperature thereby forming silicon crystal nuclei on a surface of the amorphous silicon layer. The temperature of the integrated circuit substrate is lowered to a second deposition temperature wherein the second deposition temperature is less than the first deposition temperature. The silicon crystal nuclei are exposed to the source gas including silicon while maintaining the second deposition temperature thereby increasing a size of the silicon crystal nuclei. The silicon layer and the silicon crystal nuclei are then annealed thereby further increasing the size of the silicon crystal nuclei to provide hemispherical grains on the silicon layer.
摘要翻译：形成半球状硅电极的方法包括在集成电路基板上形成非晶硅层，将集成电路基板和非晶硅层加热到第一沉积温度的步骤。在保持第一沉积温度的同时，将非晶硅层暴露于包括硅的源气体，从而在非晶硅层的表面上形成硅晶核。集成电路基板的温度降低到第二沉积温度，其中第二沉积温度小于第一沉积温度。将硅晶核暴露于包括硅的源气体，同时保持第二沉积温度，从而增加硅晶核的尺寸。然后将硅层和硅晶核退火，从而进一步增加硅晶核的尺寸，以在硅层上提供半球形晶粒。

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