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1. 发明授权

US06312987B1 Method for manufacturing semiconductor device having hemispherical grain polysilicon film 失效
标题翻译：具有半球状晶粒多晶硅膜的半导体器件的制造方法
公开(公告)号：US06312987B1
公开(公告)日：2001-11-06
申请号：US09071681
申请日：1998-05-01
申请人： Chan-hee Han , Young-ho Kang , Chang-jip Yang , Young-kyou Park
发明人： Chan-hee Han , Young-ho Kang , Chang-jip Yang , Young-kyou Park
IPC分类号： H01L218242
CPC分类号： H01L28/84
摘要： A method for forming a hemispherical grain polysilicon layer on an amorphous silicon film increases the surface area of the layer by first forming silicon crystal nuclei on the film, and then enlarging the nuclei before annealing. The nuclei are formed on the amorphous silicon film loading a substrate having the amorphous silicon film into a chamber and injecting a silicon source gas into the chamber at a first, low flow rate which allows the pressure of the chamber to be reduced, thereby increasing the density of the crystal nuclei. A silicon source gas is then injected into the chamber at a second, higher flow rate, thereby enlarging the silicon crystal nuclei on the amorphous layer. The resulting structure is then annealed to form a hemispherical grain polysilicon layer having a large surface area due to the irregular surface of the polysilicon layer. A dielectric layer is then formed on the polysilicon layer, and an impurity-doped polycrystaline silicon layer is deposited over the dielectric layer to form a capacitor.
摘要翻译：在非晶硅膜上形成半球形晶粒多晶硅层的方法通过首先在膜上形成硅晶核，然后在退火之前放大核来增加该层的表面积。在非晶硅膜上形成核，该非晶硅膜将具有非晶硅膜的衬底装载到腔室中，并以第一低流量将硅源气体注入腔室，该第一低流量允许腔室的压力减小，从而增加晶核的密度。然后将硅源气体以第二较高的流速注入室中，从而在非晶层上扩大硅晶核。然后将所得结构退火以形成由于多晶硅层的不规则表面而具有大表面积的半球状晶粒多晶硅层。然后在多晶硅层上形成电介质层，并且在电介质层上沉积杂质掺杂的多晶硅层以形成电容器。

2. 发明授权

US06953739B2 Method for manufacturing a semiconductor device having hemispherical grains at very low atmospheric pressure using first, second, and third vacuum pumps 失效
标题翻译：使用第一，第二和第三真空泵制造具有在非常低的大气压下的半球形晶粒的半导体器件的方法
公开(公告)号：US06953739B2
公开(公告)日：2005-10-11
申请号：US10704985
申请日：2003-11-12
申请人： Chang-jip Yang , Chan-hee Han , Young-kyou Park , Jae-wook Kim
发明人： Chang-jip Yang , Chan-hee Han , Young-kyou Park , Jae-wook Kim
IPC分类号： C23C16/02 , C23C16/24 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/205
CPC分类号： H01L28/84 , C23C16/0272 , C23C16/24 , C23C16/4412 , C23C16/455 , C23C16/45578 , Y10S438/964 , Y10T29/41
摘要： An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being different from one another so as to uniformly supply a source gas. A loadlock chamber is placed under the processing chamber. A boat loaded with wafers is moved from the loadlock chamber to the processing chamber, with the boat being rotated while the source gas is supplied. The processing chamber and loadlock chambers are connected to a vacuum system having two vacuum pumps for maintaining a vacuum in the chambers. A third vacuum pump, connected to the processing chamber, is operated when the vacuum in the processing chamber reaches a predetermined value.
摘要翻译：一种用于在半导体存储器件的电容器下电极上形成HSG硅层的装置和方法。该装置包括具有多个源气体供给喷嘴的处理室，喷嘴的长度彼此不同，以便均匀地供应源气体。负荷室放置在处理室下方。装载有晶片的船从装载室移动到处理室，同时在供应源气体的同时使船旋转。处理室和负载锁定室连接到具有两个真空泵的真空系统，用于在腔室中保持真空。当处理室中的真空达到预定值时，连接到处理室的第三真空泵被操作。

3. 发明授权

US6074486A Apparatus and method for manufacturing a semiconductor device having hemispherical grains 失效
标题翻译：用于制造具有半球形晶粒的半导体器件的装置和方法
公开(公告)号：US6074486A
公开(公告)日：2000-06-13
申请号：US62715
申请日：1998-04-20
申请人： Chang-jip Yang , Chan-hee Han , Young-kyou Park , Jae-wook Kim
发明人： Chang-jip Yang , Chan-hee Han , Young-kyou Park , Jae-wook Kim
IPC分类号： H01L21/20 , C23C16/02 , C23C16/24 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： H01L28/84 , C23C16/0272 , C23C16/24 , C23C16/4412 , C23C16/455 , C23C16/45578
摘要： An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being different from one another so as to uniformly supply a source gas. A loadlock chamber is placed under the processing chamber. A boat loaded with wafers is moved from the loadlock chamber to the processing chamber, with the boat being rotated while the source gas is supplied. The processing chamber and loadlock chambers are connected to a vacuum system having two vacuum pumps for maintaining a vacuum in the chambers. A third vacuum pump, connected to the processing chamber, is operated when the vacuum in the processing chamber reaches a predetermined value.
摘要翻译：一种用于在半导体存储器件的电容器下电极上形成HSG硅层的装置和方法。该装置包括具有多个源气体供给喷嘴的处理室，喷嘴的长度彼此不同，以便均匀地供应源气体。负荷室放置在处理室下方。装载有晶片的船从装载室移动到处理室，同时在供应源气体的同时使船旋转。处理室和负载锁定室连接到具有两个真空泵的真空系统，用于在腔室中保持真空。当处理室中的真空达到预定值时，连接到处理室的第三真空泵被操作。

4. 发明授权

US06673673B1 Method for manufacturing a semiconductor device having hemispherical grains 失效
标题翻译：具有半球形晶粒的半导体器件的制造方法
公开(公告)号：US06673673B1
公开(公告)日：2004-01-06
申请号：US09519661
申请日：2000-03-06
申请人： Chang-jip Yang , Chan-hee Han , Young-kyou Park , Jae-wook Kim
发明人： Chang-jip Yang , Chan-hee Han , Young-kyou Park , Jae-wook Kim
IPC分类号： H01L218242
CPC分类号： H01L28/84 , C23C16/0272 , C23C16/24 , C23C16/4412 , C23C16/455 , C23C16/45578 , Y10S438/964 , Y10T29/41
摘要： An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being different from one another so as to uniformly supply a source gas. A loadlock chamber is placed under the processing chamber. A boat loaded with wafers is moved from the loadlock chamber to the processing chamber, with the boat being rotated while the source gas is supplied. The processing chamber and loadlock chambers are connected to a vacuum system having two vacuum pumps for maintaining a vacuum in the chambers. A third vacuum pump, connected to the processing chamber, is operated when the vacuum in the processing chamber reaches a predetermined value.
摘要翻译：一种用于在半导体存储器件的电容器下电极上形成HSG硅层的装置和方法。该装置包括具有多个源气体供给喷嘴的处理室，喷嘴的长度彼此不同，以便均匀地供应源气体。负荷室放置在处理室下方。装载有晶片的船从装载室移动到处理室，同时在供应源气体的同时使船旋转。处理室和负载锁定室连接到具有两个真空泵的真空系统，用于在腔室中保持真空。当处理室中的真空达到预定值时，连接到处理室的第三真空泵被操作。

5. 发明授权

US5821152A Methods of forming hemispherical grained silicon electrodes including multiple temperature steps 失效
标题翻译：形成半球形硅电极的方法包括多个温度步骤
公开(公告)号：US5821152A
公开(公告)日：1998-10-13
申请号：US950962
申请日：1997-10-15
申请人： Chan-hee Han , Chang-jip Yang , Young-kyou Park , Jae-wook Kim
发明人： Chan-hee Han , Chang-jip Yang , Young-kyou Park , Jae-wook Kim
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/108 , H01L21/20
CPC分类号： H01L28/84
摘要： A method of forming a hemispherical grained silicon electrode includes the steps of forming an amorphous silicon layer on an integrated circuit substrate, and heating the integrated circuit substrate and the amorphous silicon layer to a first deposition temperature. The amorphous silicon layer is exposed to a source gas including silicon while maintaining the first deposition temperature thereby forming silicon crystal nuclei on a surface of the amorphous silicon layer. The temperature of the integrated circuit substrate is lowered to a second deposition temperature wherein the second deposition temperature is less than the first deposition temperature. The silicon crystal nuclei are exposed to the source gas including silicon while maintaining the second deposition temperature thereby increasing a size of the silicon crystal nuclei. The silicon layer and the silicon crystal nuclei are then annealed thereby further increasing the size of the silicon crystal nuclei to provide hemispherical grains on the silicon layer.
摘要翻译：形成半球状硅电极的方法包括在集成电路基板上形成非晶硅层，将集成电路基板和非晶硅层加热到第一沉积温度的步骤。在保持第一沉积温度的同时，将非晶硅层暴露于包括硅的源气体，从而在非晶硅层的表面上形成硅晶核。集成电路基板的温度降低到第二沉积温度，其中第二沉积温度小于第一沉积温度。将硅晶核暴露于包括硅的源气体，同时保持第二沉积温度，从而增加硅晶核的尺寸。然后将硅层和硅晶核退火，从而进一步增加硅晶核的尺寸，以在硅层上提供半球形晶粒。

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