专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07504690B2 Power semiconductor devices 有权
标题翻译：功率半导体器件
公开(公告)号：US07504690B2
公开(公告)日：2009-03-17
申请号：US10529731
申请日：2003-09-15
申请人： Brendan P. Kelly , Steven T. Peake , Raymond J. Grover
发明人： Brendan P. Kelly , Steven T. Peake , Raymond J. Grover
IPC分类号： H01L29/72
CPC分类号： H01L29/7813 , H01L29/402 , H01L29/407 , H01L29/7397 , H01L29/7831 , H02M3/1588 , H03K17/063 , Y02B70/1466
摘要： A vertical insulated gate field effect power transistor (3) has a plurality of parallel transistor cells (TC3) with a peripheral gate structure (G31, G2) at the boundary between each two transistor cells (TC3). The gate structure (G31, G32) comprises first (G31) and second (G32) gates isolated from each other so as to be independently operable. The first gate (G31) is a trench-gate (21, 22), and the second gate (G32) has at least an insulated planar gate portion (13, 14). Simultaneous operation of the first (G31) and second (G32) gates forms a conduction channel (23c, 23b) between source (16) and drain (12) regions of the device (3). The device (3) has on-state resistance approaching that of a trench-gate device, better switching performance than a DMOS device, and a better safe operating area than a trench-gate device. The device (3) may be a high side power transistor is series with a low side power transistor (6) in a circuit arrangement (50) (FIG. 14) for supplying a regulated output voltage. The device (3) may also be a switch in a circuit arrangement (60) (FIG. 15) for supplying current to a load (L). These circuit arrangements (50, 60) include a terminal (Vcc, VF) for applying a supplied fixed potential to an electrode (G311) for the first gates (G31) and a gate driver circuit (573, 673) for applying modulating potential to an electrode (G321) for the second gates (G32).
摘要翻译：垂直绝缘栅场效应功率晶体管（3）在每两个晶体管单元（TC3）之间的边界处具有多个具有外围栅极结构（G31，G2）的并联晶体管单元（TC3）。栅极结构（G31，G32）包括彼此隔离的第一（G31）和第二（G32）栅极，以便可独立地操作。第一栅极（G31）是沟槽栅极（21,22），第二栅极（G32）至少具有绝缘平面栅极部分（13,14）。第一（G31）和第二（G32）栅极的同时操作在器件（3）的源极（16）和漏极（12）区域之间形成导电沟道（23c，23b）。器件（3）具有接近沟槽栅极器件的导通电阻，比DMOS器件更好的开关性能，以及比沟槽栅极器件更好的安全工作区域。装置（3）可以是用于提供稳定输出电压的电路装置（50）（图14）中的与低侧功率晶体管（6）串联的高侧功率晶体管。装置（3）还可以是用于向负载（L）供电的电路装置（60）（图15）中的开关。这些电路装置（50,60）包括用于将提供的固定电位施加到用于第一栅极（G31）的电极（G311）的端子（Vcc，VF）和用于施加调制电位的栅极驱动电路（573,673）用于第二栅极（G32）的电极（G321）。

2. 发明授权

US5801573A Protected switch having a power semiconductor device 失效
标题翻译：具有功率半导体器件的保护开关
公开(公告)号：US5801573A
公开(公告)日：1998-09-01
申请号：US884104
申请日：1997-06-27
申请人： Brendan P. Kelly , Royce Lowis
发明人： Brendan P. Kelly , Royce Lowis
IPC分类号： H01L21/8238 , H01L27/08 , H01L27/092 , H01L29/417 , H01L29/78 , H03K17/08 , H03K17/082 , H03K17/687
CPC分类号： H01L29/7815 , H01L29/7803 , H01L29/7804 , H01L29/7808 , H03K17/0822 , H01L29/41766
摘要： A protected switch has a power semiconductor device (P) having first and second main electrodes (D and S) for coupling a load (L) between first (2) and second (3) voltage supply lines, a control electrode (G) coupled to a control voltage supply line (4) and a sense electrode (S1) for providing in operation of the power semiconductor device a sense current that flows between the first (d) and sense electrodes (S1) and is indicative of the current that flows between the first (D) and second (S) main electrodes. A control arrangement (S) has a sense resistance (R4) coupled to the sense electrode (S1) and across which a sense voltage is developed by the sense current (I.sub.3). A control semiconductor device (M3) has its main electrodes coupled between the control electrode (G) and the second (S) main electrode of the power semiconductor device (P). A semiconductor device (M2) has one (d) of its main electrodes coupled to the control electrode (g) of the control semiconductor device (M3) and the other (s) to the sense resistance (R4). A reference arrangement (50) provides a biasing voltage V.sub.b for the control electrode (g) of the semiconductor device (M2) to cause the semiconductor device (M2) to conduct sufficiently to cause the control semiconductor device (M3) to be non-conducting until the sense voltage reaches a reference voltage determined by the biasing voltage when the semiconductor device (M2) becomes less conducting, causing the control semiconductor device (M3) to start to conduct, so reducing the voltage at the control electrode (G) of the power semiconductor device (P) and thus reducing the current through the power semiconductor device (P).
摘要翻译：受保护的开关具有功率半导体器件（P），该功率半导体器件（P）具有用于耦合第一（2）和第二（3）电压源线之间的负载（L）的第一和第二主电极（D和S）控制电压供应线（4）和感测电极（S1），用于在功率半导体器件的操作中提供在第一（d）和感测电极（S1）之间流动的感测电流，并且指示流动的电流在第一（D）和第二（S）主电极之间。控制装置（S）具有耦合到感测电极（S1）的感测电阻（R4），并且感测电流（I3）产生感测电压。控制半导体器件（M3）的主电极耦合在功率半导体器件（P）的控制电极（G）和第二（S）主电极之间。半导体器件（M2）的主电极中的一个（d）耦合到控制半导体器件（M3）的控制电极（g），另一个耦合到检测电阻（R4）。参考装置（50）为半导体装置（M2）的控制电极（g）提供偏置电压Vb，以使半导体装置（M2）充分进行导致控制半导体装置（M3）不导通直到当半导体器件（M2）变得较小导通时，感测电压达到由偏置电压确定的参考电压，使得控制半导体器件（M3）开始导通，从而降低控制电极（G）处的电压功率半导体器件（P），从而减小通过功率半导体器件（P）的电流。

3. 发明授权

US5401996A Overvoltage protected semiconductor switch 失效
标题翻译：过电压保护半导体开关
公开(公告)号：US5401996A
公开(公告)日：1995-03-28
申请号：US159756
申请日：1993-11-30
申请人： Brendan P. Kelly
发明人： Brendan P. Kelly
IPC分类号： H01L27/02 , H03K17/08 , H03K17/082 , H01L29/78 , H01L29/90
CPC分类号： H01L27/0251 , H03K17/0822 , H03K2217/0018
摘要： An overvoltage protected switch (1) includes a power semiconductor device (10) formed by a plurality of second regions (11) within a first region (3) of a semiconductor body (2), and an insulated gate 12 overlying a conduction channel region (13) between each second region (11) and the first region (3) with the first and second regions (3 and 11) providing a conductive path to first and second main electrodes (4 and 5), respectively, of the switch (1). An auxiliary semiconductor device (100) is formed by a number of further second regions (11), less than the plurality of second regions (11), and a further insulated gate (120) overlying a further conduction channel region (13) between each further second region (11) and the first region (3). A further conductive path connects the further second region (11) to the insulated gate (12) of the power semiconductor device (10) and a diode arrangement (30 ) connects the insulated gate (120) of the auxiliary semiconductor device (100) to the first main electrode (4) for causing the auxiliary semiconductor device (100) to conduct to supply a signal via the further inductive path to the insulated gate (12) of the power semiconductor device (10) to switch the power semiconductor device (10) on when the voltage on the first main electrode (4) exceeds the predetermined value. The auxiliary semiconductor device (100) thus has a large current-handling capability enabling rapid turn-on of the power device (10) in the event of an overvoltage.
摘要翻译：过电压保护开关（1）包括由半导体主体（2）的第一区域（3）内的多个第二区域（11）形成的功率半导体器件（10），以及覆盖导电沟道区域（13）在第二区域（11）和第一区域（3）之间，第一和第二区域（3和11）分别提供到开关的第一和第二主电极（4和5）的导电路径 1）。辅助半导体器件（100）由若干另外的第二区域（11）形成，小于多个第二区域（11），以及另外的绝缘栅极（120），覆盖在每一个之间的另一导电沟道区域（13）另外的第二区域（11）和第一区域（3）。另外的导电路径将另外的第二区域（11）连接到功率半导体器件（10）的绝缘栅极（12），并且二极管装置（30）将辅助半导体器件（100）的绝缘栅极（120）连接到所述第一主电极（4）用于使所述辅助半导体器件（100）导通，以经由所述另外的感应路径将信号提供给所述功率半导体器件（10）的绝缘栅极（12），以切换所述功率半导体器件（10）），当第一主电极（4）上的电压超过预定值时。因此，辅助半导体器件（100）具有大的电流处理能力，能够在过电压的情况下快速接通电力设备（10）。

4. 发明授权

US07605598B2 Undercurrent sense arrangement and method 失效
标题翻译：欠电流检测装置和方法
公开(公告)号：US07605598B2
公开(公告)日：2009-10-20
申请号：US10561783
申请日：2004-05-14
申请人： Brendan P. Kelly
发明人： Brendan P. Kelly
IPC分类号： G01R31/26
CPC分类号： G01R19/16571 , G01R19/16519 , G01R19/16538
摘要： An on-state low current detector uses a transistor with main (32) and sense (34) cells. Feedback circuit (36) acts to keep the voltage across main cells (32) at a substantially constant target value when the load current falls below a level that generates the target voltage value in the main cells. The target voltage value is sufficiently high to ensure that the voltages of low current detection comparator (18) are readily measurable.
摘要翻译：导通状态低电流检测器使用具有主（32）和有源（34）单元的晶体管。当负载电流下降到主电池内产生目标电压值的电平时，反馈电路（36）用于将主电池（32）上的电压保持在基本恒定的目标值。目标电压值足够高以确保低电流检测比较器（18）的电压容易测量。

5. 发明授权

US5623912A Ignition control circuit, and engine system 失效
标题翻译：点火控制电路和发动机系统
公开(公告)号：US5623912A
公开(公告)日：1997-04-29
申请号：US576551
申请日：1995-12-21
申请人： Brendan P. Kelly
发明人： Brendan P. Kelly
IPC分类号： F02P3/04 , F02P3/045 , F02P3/05 , F02P7/03 , F02P3/12
CPC分类号： F02P3/051 , F02P3/0453 , F02P7/035
摘要： A respective power semiconductor switch (M1, M2, M3) is provided for each ignition coil (20) of an internal combustion engine. Each such switch (M1, M2, M3) has a first main electrode (C) for coupling the primary winding (20a) of the associated ignition coil (20) to a first voltage supply line (1), and a control electrode (G) coupled to an respective ignition control line (Ign1, Ign2, Ign3) for rendering these switches (M1, M2, M3) conducting in a given sequence. A further semiconductor device (M4) has first and second main electrodes (d and s) coupled between second main electrodes (E) of the power semiconductor switches (M1, M2, M3) and a second voltage supply line (2), and a control electrode (g) for a drive signal controlling the current flow through the device (M4). A current sensing arrangement (Rs) senses the current flowing through this further device (M4). A control device (30) common to the switches (M1, M2, M3) of the coils (20) controls the drive signal to the control electrode (g) of the further device (M4) to limit the current through this further device (M4) to a predetermined value and then to turn off this further device (M4) so as to render a conducting one of the switches (M1, M2, M3) non-conducting to initiate sparking in the cylinder associated with that one switch. Sophisticated logic and control functions can be integrated with the common control device (30). The complex impedance of the ignition coil (20) can be isolated readily from the control loop of the further device (M4) and control device (30) by the switches (M1, M2, . . . ) operating in cascade with the further device (M4).
摘要翻译：为内燃机的每个点火线圈（20）提供相应的功率半导体开关（M1，M2，M3）。每个这样的开关（M1，M2，M3）具有用于将相关联的点火线圈（20）的初级绕组（20a）耦合到第一电压供应线（1）的第一主电极（C）和控制电极）耦合到相应的点火控制线（Ign1，Ign2，Ign3），用于使给定序列中的这些开关（M1，M2，M3）导通。另一个半导体器件（M4）具有耦合在功率半导体开关（M1，M2，M3）的第二主电极（E）和第二电压供应线（2）之间的第一和第二主电极（d和s），以及控制电极（g），用于控制通过装置（M4）的电流的驱动信号。电流感测装置（Rs）感测流过该另外的装置（M4）的电流。线圈（20）的开关（M1，M2，M3）共用的控制装置（30）将驱动信号控制到另一装置（M4）的控制电极（g），以限制通过该另一装置 M4）到预定值，然后关闭该另外的装置（M4），以使导通的一个开关（M1，M2，M3）不导通，以在与该一个开关相关联的气缸中引发火花。复杂的逻辑和控制功能可以与公共控制设备（30）集成。点火线圈（20）的复阻抗可以通过与另外的装置级联操作的开关（M1，M2 ...）容易地与另一装置（M4）和控制装置（30）的控制回路隔离（M4）。

6. 发明授权

US5444219A Temperature sensing device and a temperature sensing circuit using such a device 失效
标题翻译：温度感测装置和使用这种装置的温度感测电路
公开(公告)号：US5444219A
公开(公告)日：1995-08-22
申请号：US309514
申请日：1994-09-20
申请人： Brendan P. Kelly
发明人： Brendan P. Kelly
IPC分类号： G01K3/14 , G01K7/01 , G01K7/22 , H01L29/78 , H05B1/02 , H03K3/2893
CPC分类号： H01L29/7803 , G01K3/14 , G01K7/01 , G01K7/223 , H01L29/7802 , H01L29/0696 , H01L29/41766
摘要： A semiconductor body (10) has a first region (13) of one formed a semiconductor device (Rx) having a resistance which varies with temperature. The semiconductor device (Rx) is formed by a second region (14) of the opposite conductivity type formed within the first region (13) and a third region (15) of the one conductivity type formed within the second region (14), with first and second electrodes (16) and (17) being spaced apart on the third region (15) so that a resistive path is provided by the third region (15) between the first and second electrodes (16 and 17) and a reference electrode (18) connecting the second region (14) to a reference potential. The impurity concentrations within the second and third regions (14 and 15) are such that the semiconductor device (Rx) has a temperature coefficient of resistance which changes, generally increases or falls only slightly, with absolute temperature such that the relative temperature coefficient of resistance referred to the sensed temperature is substantially constant. Respective temperature sensing devices may be provided adjacent to and remote from an active semiconductor device to provide a differential temperature sensor.
摘要翻译：半导体本体（10）具有形成半导体器件（Rx）的第一区域（13），其具有随温度而变化的电阻。半导体器件（Rx）由在第一区域（13）内形成的相反导电类型的第二区域（14）和形成在第二区域（14）内的导电类型的第三区域（15）形成，第一和第二电极（16）和（17）在第三区域（15）上间隔开，使得电阻路径由第一和第二电极（16和17）之间的第三区域（15）和参考电极（18）将第二区域（14）连接到参考电位。第二和第三区域（14和15）内的杂质浓度使得半导体器件（Rx）具有随着绝对温度变化的电阻温度系数，其通常随着绝对温度的升高或稍微降低，使得电阻的相对温度系数参考感测的温度基本上是恒定的。可以将相应的温度感测装置设置成与有源半导体器件相邻并远离有源半导体器件，以提供差分温度传感器。

7. 发明授权

US5336943A Temperature sensing circuit 失效
标题翻译：温度检测电路
公开(公告)号：US5336943A
公开(公告)日：1994-08-09
申请号：US907477
申请日：1992-07-01
申请人： Brendan P. Kelly , Royce Lowis
发明人： Brendan P. Kelly , Royce Lowis
IPC分类号： G01K7/01 , H01L29/78 , G06G7/10 , H03K5/22
CPC分类号： H01L29/7803 , G01K7/01 , H01L29/41766
摘要： A temperature sensing circuit has a first insulated gate field effect device which is operated deep into its subthreshold region where the voltage across the device varies with temperature and has a second insulated gate field effect device which is operated in an area of its square law region where the voltage across the second insulated gate field effect device is substantially independent of temperature. A comparator compares the voltages across the first and second field effect devices and provides a signal OT indicating the temperature sensed by the first insulated gate field effect device.
摘要翻译：温度检测电路具有第一绝缘栅场效应器件，该器件深度地操作其器件中的电压随温度变化的亚阈值区域，并且具有第二绝缘栅场效应器件，其在其平方律区域的区域中操作，第二绝缘栅场效应器件两端的电压基本上与温度无关。比较器比较第一和第二场效应装置两端的电压，并提供表示由第一绝缘栅场效应装置感测的温度的信号OT。

8. 发明授权

US07443648B2 Driver for inductive load 有权
标题翻译：驱动器用于感性负载
公开(公告)号：US07443648B2
公开(公告)日：2008-10-28
申请号：US10552904
申请日：2004-04-08
申请人： John R. Cutter , Brendan P. Kelly
发明人： John R. Cutter , Brendan P. Kelly
IPC分类号： H01H47/00 , H01H9/00
CPC分类号： H03K17/6874 , H02M3/158 , H02M2003/1555 , H03K17/08142
摘要： A driver for an inductive load such as a solenoid coil 92 includes three FETs 4,6,8. Two of the FETs are reversely connected between battery and output terminals 16, 18, and one of the FETs is connected between output and ground terminals 16, 14. A driver circuit 10 having high and low side control circuitry 58,56 is formed in a common substrate with two of the FETs 4,6. In use, a coil 92 is connected to the output terminal 16, and driven in an energize mode in which current in the coil 92 is built up as indicated by arrow 100, a freewheel mode in which current circulates freely as indicated by arrow 102, and then may be switched off. The reversely connected FETs allow both short circuits to be prevented in the energize mode and allow the coil to be rapidly switched off. In spite of the control circuitry being formed in a common substrate with some of the FETs, the arrangement allows the FETs to be properly driven.
摘要翻译：诸如电磁线圈92的感性负载的驱动器包括三个FET 4,6,8。两个FET反向连接在电池和输出端子16,18之间，其中一个FET连接在输出和接地端子16,14之间。具有高低侧控制电路58,56的驱动电路10形成在具有两个FET 4,6的共用衬底。在使用中，线圈92连接到输出端子16，并且以如箭头100所示的线圈92中的电流被构建的通电模式被驱动，其中电流如箭头102所示自由地循环，然后可以关闭。反向连接的FET允许在通电模式下防止短路，并允许线圈快速关断。尽管控制电路形成在具有一些FET的公共衬底中，但是这种布置允许FET被适当地驱动。

9. 发明授权

US5886515A Power semiconductor devices with a temperature sensor circuit 失效
标题翻译：具有温度传感器电路的功率半导体器件
公开(公告)号：US5886515A
公开(公告)日：1999-03-23
申请号：US25369
申请日：1998-02-18
申请人： Brendan P. Kelly
发明人： Brendan P. Kelly
IPC分类号： H01L21/822 , G01K3/14 , G01R31/00 , G01R31/40 , H01L27/04 , H03K17/08 , H03K17/082 , G05F3/16 , G06G7/10
CPC分类号： G01R31/40 , G01K3/14 , H03K17/0822 , G01R31/006 , H03K2017/0806 , Y10S323/907
摘要： A temperature sensor circuit of a power semiconductor component comprises temperature-sensitive elements, some (Q1, and R1 to R3) of which are located in the vicinity of an active area of the component where heat is generated by the power semiconductor device (MPWR), whereas others (such as R4, R') are located more remote from the heat-generating active area and so are in a cool location. Hot-location elements (Q1, and R1 to R3) with different temperature coefficients are present in a first comparator circuit for indicating device temperature (Tabs) in the vicinity of the heat-generating active area. Both hot-location and cool-location elements (R2 and R4) are present in a second comparator circuit for indicating when a temperature gradient (Tdiff) threshold occurs. A circuit connection (5, 7) between the first and second comparator circuits, preferably at the inputs of their respective comparators (CP1, CP2) couples together the hot-location temperature-sensitive elements (Q1, R1, R2, R3) of the first and second comparator circuits so that the temperature gradient threshold sensed by the second comparator circuit decreases as a function of the device temperature (Tabs).
摘要翻译：功率半导体部件的温度传感器电路包括温度敏感元件，其中一些（Q1和R1至R3）位于由功率半导体器件（MPWR）产生热量的部件的有源区域附近，而其他（例如R4，R'）位于比发热的有效区域更远的地方，并且在较酷的位置。具有不同温度系数的热定位元件（Q1和R1至R3）存在于用于指示发热有效区域附近的器件温度（Tabs）的第一比较器电路中。热位置和冷定位元件（R2和R4）都存在于第二比较器电路中，用于指示何时出现温度梯度（Tdiff）阈值。第一和第二比较器电路之间的电路连接（5,7）优选地在它们各自的比较器（CP1，CP2）的输入处将热位置温度敏感元件（Q1，R1，R2，R3）第一和第二比较器电路，使得由第二比较器电路检测的温度梯度阈值作为器件温度（Tabs）的函数而减小。

10. 发明授权

US5506539A IGFET power semiconductor circuit with GAE control and fault detection circuits 失效
标题翻译：具有GAE控制和故障检测电路的IGFET功率半导体电路
公开(公告)号：US5506539A
公开(公告)日：1996-04-09
申请号：US263701
申请日：1994-06-22
申请人： Brendan P. Kelly , Paul T. Moody
发明人： Brendan P. Kelly , Paul T. Moody
IPC分类号： H01L29/78 , H01L27/04 , H03K17/0412 , H03K17/08 , H03K17/082 , H03K17/687 , H03K17/16
CPC分类号： H03K17/04123 , H03K17/0822
摘要： A power semiconductor device circuit has an insulated gate field effect power semiconductor device with first and second main electrodes and a gate electrode. A gate control circuit provides a conductive path between the gate electrode and a gate voltage supply terminal. The gate control circuit has a resistance coupled between the gate electrode and the gate voltage supply terminal. A switching device has first and second main electrodes coupled to the gate voltage supply terminal and the gate electrode, respectively, so that the main current path between the first and second main electrodes is coupled in parallel with the resistance, the switching device having a first non-conducting state and a second conducting state for providing, in the second conducting state, an additional resistance in parallel with the resistance. The switching device switches from one of the first and second states to the other when the voltage at the gate voltage supply terminal changes in order to turn the power semiconductor device on or off, or upon the detection of a fault condition within the power semiconductor device. In either case, the overall resistance of the conductive path between the gate electrode and the gate voltage supply terminal is altered.
摘要翻译：功率半导体器件电路具有具有第一和第二主电极和栅电极的绝缘栅场效应功率半导体器件。栅极控制电路在栅极电极和栅极电压提供端子之间提供导电路径。栅极控制电路具有耦合在栅极电极和栅极电压端子之间的电阻。开关装置具有分别与栅极电压端子和栅电极耦合的第一和第二主电极，使得第一和第二主电极之间的主电流路径与电阻并联耦合，开关装置具有第一非导通状态和第二导通状态，用于在第二导通状态下提供与电阻平行的附加电阻。当栅极电压供应端的电压改变以便开启或关闭功率半导体器件时，或者在检测到功率半导体器件内的故障状态时，开关器件从第一状态和第二状态之一切换到另一状态。在这两种情况下，栅电极和栅极电压端子之间的导电路径的整体电阻改变。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式